We report nonlinear parametric interactions using a hydrodynamic model of ion-implanted semiconductor plasmas having strain-dependent dielectric constants（SDDC）. High-dielectric-constant materials are technologicall...We report nonlinear parametric interactions using a hydrodynamic model of ion-implanted semiconductor plasmas having strain-dependent dielectric constants（SDDC）. High-dielectric-constant materials are technologically important because of their nonlinear properties. We find that the third-order susceptibility varies in the range 10^-14--10^-12m^2·V^-2 for ion-implanted semiconductor plasmas, which is in good agreement with previous results. It is found that the presence of SDDC in ion-implanted semiconductor plasma modifies the characteristic properties of the material.展开更多
The plasma temperature of the semiconductor bridge (SCB) was measured in real-time according to relative intensity ratio of dual lines of atomic emission spectrum.The plasma temperature under different discharge pulse...The plasma temperature of the semiconductor bridge (SCB) was measured in real-time according to relative intensity ratio of dual lines of atomic emission spectrum.The plasma temperature under different discharge pulses and the influence of discharge pulse energy on it were studied.The results show that the plasma peak temperature rises gradually with the increase of initial discharging voltage and charging capacitance.For the capacitance of 22 μF,if the initial discharging voltage increases from 21 V to 63 V,the plasma peak temperature rises from 2 000 K to 6 200 K.For the discharging voltage of 39 V,the peak temperature rises from 2 200 K to 3 800 K when the capacitance increases from 6.8 μF to 100 μF.The change of pulse discharge has a very small effect on the plasma temperature at the late time discharge (LTD).In view of the change of plasma temperature with the pulse energy,the discharging voltage has a greater effect on the plasma temperature than the capacitance.The results provide some experimental basis for the further research on SCB ignition and detonation mechanisms.展开更多
We study the dispersion properties of surface plasmon（SP） oscillations in a semi-bounded semiconductor plasma with the effects of the Coulomb exchange（CE） force associated with the spin polarization of electrons a...We study the dispersion properties of surface plasmon（SP） oscillations in a semi-bounded semiconductor plasma with the effects of the Coulomb exchange（CE） force associated with the spin polarization of electrons and holes as well as the effects of the Fermi degenerate pressure and the quantum Bohm potential.Starting from a quantum hydrodynamic model coupled to the Poisson equation,we derive the general dispersion relation for surface plasma waves.Previous results in this context are recovered.The dispersion properties of the surface waves are analyzed in some particular cases of interest and the relative influence of the quantum forces on these waves are also studied for a nano-sized Ga As semiconductor plasma.It is found that the CE effects significantly modify the behaviors of the SP waves.The present results are applicable to understand the propagation characteristics of surface waves in solid density plasmas.展开更多
Plasma treatments of boron-doped nano-crystalline diamond （NCD） thin films were carried out in order to improve their electrical properties of the films. Boron-doped NCD thin films were fabricated on well polished p...Plasma treatments of boron-doped nano-crystalline diamond （NCD） thin films were carried out in order to improve their electrical properties of the films. Boron-doped NCD thin films were fabricated on well polished poly-crystalline diamond （PCD） thick films in a microwave plasma enhanced chemical vapor deposition （MPCVD） reactor, then they were processed in methane, ar- gon, hydrogen and B2H~ （0.1% diluted by H~） plasmas, respectively. Scanning electron microscopy （SEM） and atomic force microscope （AFM） results show that the surface morphology changed lit- tle during the 10 min treatment. Secondary ion mass spectroscopy （SIMS） results indicate that B2H6 plasma was efficient for increasing boron concentration in NCD films, while the carrier anal- yses demonstrates that CH4 plasma processing was effective to activate the dopants and resulted in good electrical properties.展开更多
In this paper, TiN/A1Ox gated A1GaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors （MOS- HFETs） were fabricated for gate-first process evaluation. By employing a low temperature ohmic process...In this paper, TiN/A1Ox gated A1GaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors （MOS- HFETs） were fabricated for gate-first process evaluation. By employing a low temperature ohmic process, ohmic contact can be obtained by annealing at 600 ℃ with the contact resistance approximately 1.6 Ω.mm. The ohmic annealing process also acts as a post-deposition annealing on the oxide film, resulting in good device performance. Those results demonstrated that the TiN/A1Ox gated MOS-HFETs with low temperature ohmic process can be applied for self-aligned gate AIGaN/GaN MOS-HFETs.展开更多
The electrostatic surface waves on semi-bounded quantum electron-hole semiconductor plasmas are studied within the framework of the quantum hydrodynamic model, including the electrons and holes quantum recoil effects,...The electrostatic surface waves on semi-bounded quantum electron-hole semiconductor plasmas are studied within the framework of the quantum hydrodynamic model, including the electrons and holes quantum recoil effects,quantum statistical pressures of the plasma species, as well as exchange and correlation effects. The dispersion characteristics of surface electrostatic oscillations are investigated by using the typical values of Ga As, Ga Sb and Ga N semiconductors. Numerical results show the existence of one low-frequency branch due to the mass difference between the electrons and holes in addition to one high-frequency branch due to charge-separation effects.展开更多
This paper studies the zero-electron-mass limit, the quasi-neutral limit and the zero-relaxation-time limit in one-dimensional hydrodynamic models of Euler-Poisson system for plasmas and semiconductors. For each limit...This paper studies the zero-electron-mass limit, the quasi-neutral limit and the zero-relaxation-time limit in one-dimensional hydrodynamic models of Euler-Poisson system for plasmas and semiconductors. For each limit in the steady-state models, the author proves the strong convergence of the sequence of solutions and gives the corresponding convergence rate. In the time-dependent models, the author shows some useful estimates for the quasi-neutral limit and the zero-electron-mass limit. This study completes the analysis made in [11,12,13,14,19].展开更多
文摘We report nonlinear parametric interactions using a hydrodynamic model of ion-implanted semiconductor plasmas having strain-dependent dielectric constants（SDDC）. High-dielectric-constant materials are technologically important because of their nonlinear properties. We find that the third-order susceptibility varies in the range 10^-14--10^-12m^2·V^-2 for ion-implanted semiconductor plasmas, which is in good agreement with previous results. It is found that the presence of SDDC in ion-implanted semiconductor plasma modifies the characteristic properties of the material.
基金Sponsored by the Anhui Province Colleges Young Talents Fund(2011SQRL121)
文摘The plasma temperature of the semiconductor bridge (SCB) was measured in real-time according to relative intensity ratio of dual lines of atomic emission spectrum.The plasma temperature under different discharge pulses and the influence of discharge pulse energy on it were studied.The results show that the plasma peak temperature rises gradually with the increase of initial discharging voltage and charging capacitance.For the capacitance of 22 μF,if the initial discharging voltage increases from 21 V to 63 V,the plasma peak temperature rises from 2 000 K to 6 200 K.For the discharging voltage of 39 V,the peak temperature rises from 2 200 K to 3 800 K when the capacitance increases from 6.8 μF to 100 μF.The change of pulse discharge has a very small effect on the plasma temperature at the late time discharge (LTD).In view of the change of plasma temperature with the pulse energy,the discharging voltage has a greater effect on the plasma temperature than the capacitance.The results provide some experimental basis for the further research on SCB ignition and detonation mechanisms.
基金financial support of Arak University under research Project No.96/5834UGC-SAP(DRS,Phase Ⅲ)[with Sanction order No.F.510/3/DRS-III/2015(SAPI)]UGC-MRP[with F.No.43-539/2014(SR) and FD Diary No.3668] for support
文摘We study the dispersion properties of surface plasmon（SP） oscillations in a semi-bounded semiconductor plasma with the effects of the Coulomb exchange（CE） force associated with the spin polarization of electrons and holes as well as the effects of the Fermi degenerate pressure and the quantum Bohm potential.Starting from a quantum hydrodynamic model coupled to the Poisson equation,we derive the general dispersion relation for surface plasma waves.Previous results in this context are recovered.The dispersion properties of the surface waves are analyzed in some particular cases of interest and the relative influence of the quantum forces on these waves are also studied for a nano-sized Ga As semiconductor plasma.It is found that the CE effects significantly modify the behaviors of the SP waves.The present results are applicable to understand the propagation characteristics of surface waves in solid density plasmas.
基金supported by the Research Fund of Hubei Provincial Department of Education of China (No.Q20081505)
文摘Plasma treatments of boron-doped nano-crystalline diamond （NCD） thin films were carried out in order to improve their electrical properties of the films. Boron-doped NCD thin films were fabricated on well polished poly-crystalline diamond （PCD） thick films in a microwave plasma enhanced chemical vapor deposition （MPCVD） reactor, then they were processed in methane, ar- gon, hydrogen and B2H~ （0.1% diluted by H~） plasmas, respectively. Scanning electron microscopy （SEM） and atomic force microscope （AFM） results show that the surface morphology changed lit- tle during the 10 min treatment. Secondary ion mass spectroscopy （SIMS） results indicate that B2H6 plasma was efficient for increasing boron concentration in NCD films, while the carrier anal- yses demonstrates that CH4 plasma processing was effective to activate the dopants and resulted in good electrical properties.
基金Project supported by the International Science and Technology Collaboration Program of China(Grant No.2012DFG52260)
文摘In this paper, TiN/A1Ox gated A1GaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors （MOS- HFETs） were fabricated for gate-first process evaluation. By employing a low temperature ohmic process, ohmic contact can be obtained by annealing at 600 ℃ with the contact resistance approximately 1.6 Ω.mm. The ohmic annealing process also acts as a post-deposition annealing on the oxide film, resulting in good device performance. Those results demonstrated that the TiN/A1Ox gated MOS-HFETs with low temperature ohmic process can be applied for self-aligned gate AIGaN/GaN MOS-HFETs.
基金Supported by the National High-Tech Research and Development Program of China under Grant No 2004AA513020, the National Natural Science Foundation of China under Grant No 60906033, and the Specialized Research Fund for the Doctoral Program of Higher Education （00800551008）
文摘The electrostatic surface waves on semi-bounded quantum electron-hole semiconductor plasmas are studied within the framework of the quantum hydrodynamic model, including the electrons and holes quantum recoil effects,quantum statistical pressures of the plasma species, as well as exchange and correlation effects. The dispersion characteristics of surface electrostatic oscillations are investigated by using the typical values of Ga As, Ga Sb and Ga N semiconductors. Numerical results show the existence of one low-frequency branch due to the mass difference between the electrons and holes in addition to one high-frequency branch due to charge-separation effects.
文摘This paper studies the zero-electron-mass limit, the quasi-neutral limit and the zero-relaxation-time limit in one-dimensional hydrodynamic models of Euler-Poisson system for plasmas and semiconductors. For each limit in the steady-state models, the author proves the strong convergence of the sequence of solutions and gives the corresponding convergence rate. In the time-dependent models, the author shows some useful estimates for the quasi-neutral limit and the zero-electron-mass limit. This study completes the analysis made in [11,12,13,14,19].
