Ions Sensitive Field Effect Transistors (ISFETs) are becoming the platform sensors for important chemical and biomedical applications. However, the accuracy of ISFET output measurement is greatly affected by the prese...Ions Sensitive Field Effect Transistors (ISFETs) are becoming the platform sensors for important chemical and biomedical applications. However, the accuracy of ISFET output measurement is greatly affected by the presences of low-frequency noise, drift and slow response of the device. This requires more safety in measured results and the tools of analysis. In this paper, we present fundamental limits on the sensitivity of ISFETs micro-sensors, arising from intrinsic and extrinsic noise sources. We developed an algorithm in MATLAB in order to model the frequency analysis of the 1/f noise in ISFET sensor using Hooge theory. We have shown that the 1/f noise of the ISFETs sensors is due to both the electrochemical system (pH solution) and the MOS component (canal size, insulator thickness). The temperature effect on the ISFET noise and the signal conditioning are also performed.展开更多
We use the carbon nanotube (CNT) as the material of the pH sensing layer of the separative structure for the extended gate H^+-ion sensitive field effect transistor (EGFET) device.The CNT paste was prepared with CNT p...We use the carbon nanotube (CNT) as the material of the pH sensing layer of the separative structure for the extended gate H^+-ion sensitive field effect transistor (EGFET) device.The CNT paste was prepared with CNT powder,Ag powder,silicagel,the di-n-butyl phthalate and the toluene solvents by appropriate ratio,then immobilized on the silicon substrate to form the carbon nanotube sensing layer.We measured theⅠ_(DS)-Ⅴ_G curves of the carbon nanotube separative structure EGFET device in the different pH buffer solutions by the Keithley 236Ⅰ-Ⅴmeasurement system.According to the experimental results,we can obtain the pH sensitivities of the carbon nanotube separative structure EGFET device,which is 62.54mV/pH from pH1 to pH13.展开更多
The advantages of the extended gate field effect transistor (EGFET) compared with the ion sensitive field effect transistor (ISFET) are easy package,easy preservation,insensitive light effect,and better stability.Al...The advantages of the extended gate field effect transistor (EGFET) compared with the ion sensitive field effect transistor (ISFET) are easy package,easy preservation,insensitive light effect,and better stability.Although EGFET has above advantages,there are still some non-ideal effects such as drift etc..The drift behavior exists during the measurement process and results in the variation of the output voltage with time.We can obtain the drift value by immersing EGFET into the pH solution for 12 hours and measure the rate of the output voltage versus time after S hours.This study analyzes the sensitivity, stability,and drift effect of the EGFET based on the structure of the ruthenium oxide/silicon (RuO_x/Si) wafer for measuring the potassium ion.The fabrication of the potassium ion sensor can be widely employed in medical detection.展开更多
The preparation,principle and measurement results of the complex ISFET withAg-AgCl reference electrode are presented in this paper.Through experiment and theory weendeavor to show the feasibility of using the Ag-AgCl ...The preparation,principle and measurement results of the complex ISFET withAg-AgCl reference electrode are presented in this paper.Through experiment and theory weendeavor to show the feasibility of using the Ag-AgCl electrode which is without solution contactas reference electrode and the way of overcoming its instability;it gives a rational explanationfor phenomenon of the ion sensitive field effect transistor which does not conform to Nernstianresponse,when we measured cations of Na<sup>+</sup>, Ca<sup>++</sup>,etc.with the Ag-AgCl reference electrode.展开更多
The fluorine ion sensitive field-effect transistor（F<sup>-</sup>-ISFET）is made by depositingvery thin LaF<sub>3</sub> film on grid of field-effect transistor with sputter method.The operating...The fluorine ion sensitive field-effect transistor（F<sup>-</sup>-ISFET）is made by depositingvery thin LaF<sub>3</sub> film on grid of field-effect transistor with sputter method.The operating principle,measuring method and measured results of F<sup>-</sup>-ISFET are given.The measured results show thatthis kind of sensor has higher sensitivity,shorter response time and better linearity.On the basisof experimental results,the factor of influencing the steadiness and repeatability of F<sup>-</sup>-ISFETare conjectured.展开更多
文摘Ions Sensitive Field Effect Transistors (ISFETs) are becoming the platform sensors for important chemical and biomedical applications. However, the accuracy of ISFET output measurement is greatly affected by the presences of low-frequency noise, drift and slow response of the device. This requires more safety in measured results and the tools of analysis. In this paper, we present fundamental limits on the sensitivity of ISFETs micro-sensors, arising from intrinsic and extrinsic noise sources. We developed an algorithm in MATLAB in order to model the frequency analysis of the 1/f noise in ISFET sensor using Hooge theory. We have shown that the 1/f noise of the ISFETs sensors is due to both the electrochemical system (pH solution) and the MOS component (canal size, insulator thickness). The temperature effect on the ISFET noise and the signal conditioning are also performed.
文摘We use the carbon nanotube (CNT) as the material of the pH sensing layer of the separative structure for the extended gate H^+-ion sensitive field effect transistor (EGFET) device.The CNT paste was prepared with CNT powder,Ag powder,silicagel,the di-n-butyl phthalate and the toluene solvents by appropriate ratio,then immobilized on the silicon substrate to form the carbon nanotube sensing layer.We measured theⅠ_(DS)-Ⅴ_G curves of the carbon nanotube separative structure EGFET device in the different pH buffer solutions by the Keithley 236Ⅰ-Ⅴmeasurement system.According to the experimental results,we can obtain the pH sensitivities of the carbon nanotube separative structure EGFET device,which is 62.54mV/pH from pH1 to pH13.
文摘The advantages of the extended gate field effect transistor (EGFET) compared with the ion sensitive field effect transistor (ISFET) are easy package,easy preservation,insensitive light effect,and better stability.Although EGFET has above advantages,there are still some non-ideal effects such as drift etc..The drift behavior exists during the measurement process and results in the variation of the output voltage with time.We can obtain the drift value by immersing EGFET into the pH solution for 12 hours and measure the rate of the output voltage versus time after S hours.This study analyzes the sensitivity, stability,and drift effect of the EGFET based on the structure of the ruthenium oxide/silicon (RuO_x/Si) wafer for measuring the potassium ion.The fabrication of the potassium ion sensor can be widely employed in medical detection.
文摘The preparation,principle and measurement results of the complex ISFET withAg-AgCl reference electrode are presented in this paper.Through experiment and theory weendeavor to show the feasibility of using the Ag-AgCl electrode which is without solution contactas reference electrode and the way of overcoming its instability;it gives a rational explanationfor phenomenon of the ion sensitive field effect transistor which does not conform to Nernstianresponse,when we measured cations of Na<sup>+</sup>, Ca<sup>++</sup>,etc.with the Ag-AgCl reference electrode.
文摘The fluorine ion sensitive field-effect transistor（F<sup>-</sup>-ISFET）is made by depositingvery thin LaF<sub>3</sub> film on grid of field-effect transistor with sputter method.The operating principle,measuring method and measured results of F<sup>-</sup>-ISFET are given.The measured results show thatthis kind of sensor has higher sensitivity,shorter response time and better linearity.On the basisof experimental results,the factor of influencing the steadiness and repeatability of F<sup>-</sup>-ISFETare conjectured.
