Genetic Transformation of Watermelon with Pumpkin DNA by Low Energy Ion Beam-mediated Introduction

The No.601 watermelon (citrullus lanatus) seeds were treated with 25 keV N+ implantation at the dosage of 7.8 ×1016 ions/cm2. After treatment, watermelon seeds were incubated with 380μg/μl pumpkin (Cucubita, maxima Duch) DNA solution at 35 ℃ for 5 hours. By two-generations of selection and resistance screening at seedling stage, one transformed material was selected out, whose rind color is similar to that of the donor pumpkin and whose size of seeds is between that of the donor and the receptor. Using AFLP (amplified fragment length polymorphism) technique, two polymorphic DNA fragments were amplified. This primarily testified that the donor DNA fragments/gene were introduced into the receptor cell and integrated into the genomic DNA of the receptor.

Study of Biological Effects of Low Energy Ion Implantation on Tomato and Radish Breeding

Biological effects of 30 keV low energy nitrogen ion implantation on the seeds of five types of tomato and one type of radish were investigated. Results showed that low energy ions have different effects on different vegetables. The whole dose-response curve of the germination ratio did not take on ＂the shape of saddle＂, but was a rising and falling waveform with the increase or decrease in ion implantation. In the vegetable of Solanaceae, two outstanding aberrant plants were selected from M1 of Henan No.4 tomato at a dose of 7x 1017 nitrogen ions/cm2, which had thin-leaves, long-petal and nipple tip fruit stably inherited to Mr. Furthermore the analysis of the isozyme showed that the activity of the mutant tomato seedling was distinct in quantity and color. In Raphanus sativus L., the aberrances were obvious in the mutant of radish 791 at a dose of 5×10^17 nitrogen ions/cm^2, and the weight of succulent root and the volume of growth were over twice the control＇s. At present, many species for breeding have been identified in the field and only stable species have been selected for the experiment of production. It is evident that the low energy ion implantation technology has clear effects on vegetables＇ genetic improvement.

Bioeffects of Low Energy Ion Beam Implantation:DNA Damage,Mutation and Gene Transter

Low-energy ion beam implantation （10 - 200 keV） has been proved to have a wide range of biological effects and is broadly used in the breeding of crops and micro-organisms.To understand its mechanisms better and facilitate its applications, the developments in the bioeffects of low energy ion beam implantation in the past twenty years are summarized in this paper.

Interaction between Low Energy ions and the Complicated Organism

Low energy ions exist widely in natural world, but people pay a little attention on. the interaction between low energy ions and matter, it is even more out of the question of studying on the relation of low energy ions and the complicated organism. The discovery of bioeffect induced by ion implantation has, however, opened a new branch in the field of ion beam application in life sciences. This paper reports recent advances in research on the role of low energy ions in Chemical synthesis of the biomolecules and application in genetic modification.

Study on Spectral Overlap Model for Energy Transfer between J-Multiplets in Rare Earth-Doped Crystals

Based on the experimental data of KY 3F 10∶Tm 3+ reported by Diaf, K ushida′s spectral overlap model (SOM) of energy transfer between J-multipl ets was studied. Firstly, with the help of the Inokuti-Hirayama and Yokota-Tan imoto models, the luminescence decay curve of 3H 4 of Tm 3+ ion was fitted, and the fitted values of corresponding interaction parameters C D A of energy transfer and C DD of energy migration were obtained. Seco ndly, by compared with Kushida′s SOM in which the relevant Judd-Ofelt approxim ative transition rates are known, the average overlap integrals of S DD and S DA were obtained. For S DD, how to treat the contributi on of the electronic-dipole (ED) crystal field transition forbidden by C 4v site symmetry in the calculation of S DD was discussed. For S DA we suggested that, by including the contribution of the phonon sideba nds in the analysis of oscillator strength of transition, Kushida′s SOM of ED- ED resonant energy transfer rate can be extended to non-resonant phonon-assist ed D-A energy transfer. The strengths and widths of phonon sidebands in this ex ample were discussed, and the results were reasonably good.

Preliminary Studies on Base Substitutions and Repair of DNA Mismatch Damage Stimulated by Low Energy N^+ Ion Beam Implantation in Escherichia coli

Ever since the low energy N+ ion beam has been accepted that the mutation effects of ionizing radiation are attributed mainly to direct or indirect damage to DNA. Evidences based on naked DNA irradiation in support of a mutation spectrum appears to be consistent, but direct proof of such results in vivo are limited. Using mutS, dam and/or dcm defective Eschericha coli imitator strains, an preliminary experimental system on induction of in vivo mutation spectra of low energy N+ ion beam has been established in this study. It was observed that the mutation rates of rifampicin resistance induced by N+ implantation were quite high, ranging from 9.2 x 10~8 to 4.9× 10~5 at the dosage of 5.2×1014 ions/cm2. Strains all had more than 90-fold higher mutation rate than its spontaneous mutation rate determined by this method. It reveals that base substitutions involve in induction of mutation of low energy nitrogen ion beam implantation. The mutation rates of mutator strains were nearly 500-fold (GM2929), 400-fold (GM5864) and 6-fold larger than that of AB1157. The GM2929 and GM5864 both lose the ability of repair DNA mismatch damage by virtue of both dam and dcm pathways defective (GM2929) or failing to assemble the repair complex (GM5864) respectively. It may explain the both strains had a similar higher mutation rate than GM124 did. It indicated that DNA cytosine methylase might play an important role in mismatch repair of DNA damage induced by N+ implantation. The further related research were also discussed.

High-Temperature Annealing Induced He Bubble Evolution in Low Energy He Ion Implanted 6H-SiC

Bubble evolution in low energy and high dose He-implanted 6H-SiC upon thermal annealing is studied. The （0001）-oriented 6H-SiC wafers are implanted with 15keV helium ions at a dose of 1×10^17 cm^-2 at room temperature. The samples with post-implantation are annealed at temperatures of 1073, 1173, 1273, and 1473K for 30rain. He bubbles in the wafers are examined via cross-sectional transmission electron microscopy （XTEM） analysis. The results present that nanoscale bubbles are almost homogeneously distributed in the damaged layer of the as-implanted sample, and no significant change is observed in the He-implanted sample after 1073 K annealing. Upon 1193 K annealing, almost full recrystallization of He-implantation-induced amorphization in 6H-SiC is observed. In addition, the diameters of He bubbles increase obviously. With continually increasing temperatures to 1273K and 1473 K, the diameters of He bubbles increase and the number density of lattice defects decreases. The growth of He bubbles after high temperature annealingabides by the Ostwald ripening mechanism. The mean diameter of He bubbles located at depths of 120-135 nm as a function of annealing temperature is fitted in terms of a thermal activated process which yields an activation energy of 1.914＋0.236eV.

Reconstruction of Ionization Density Distribution in Hall Thruster Channel from Ion Energy Spectrum of Plasma Jet

Propellant ionization in the Hall thruster discharge channel is a significant process and has strong influence on the thruster＇s efficiency. In this work, the functional relation has been established between the ionization density distribution and the function of the ion energy distribution through the basic equations governing the ion flow in the Hall thruster channel and the method achieved for reconstructing the ionization density distribution inside the channel by ordinary plasma diagnosis of the potential distribution and ion energy spectrum of the plasma jet. The ionization density distributions of single and double charged ions in an ATON-thruster channel have been reconstructed according to the experimental data of the potential distribution along the axis of the channel and the ion energy spectrum of the plasma jet. The agreement between the calculation and experimental results of the percentage of double charged ions proves the validity of our method achieved in this work.

Growth of deuterium clusters in a gas jet and ion energy spectrum of clusters in ultra-short laser field

Large deuterium clusters are generated using a cryogenic pulse valve with a cone nozzle （21 mm long, 4° open angle）. Rayleigh scattering experiment is carried out to obtain the scaling relation between scattering signal SR and backing pressure P0. A method using the Coulomb explosion model is proposed to verify that the clusters continue to grow after their leaving the nozzle. Our experiments suggest a tentatively optimized position for laser cluster interaction.

Investigation of the Ion Energy Transport in the Scrape-Off Layer on the J-TEXT Tokamak Using a Retarding Field Analyzer

Radial profiles of the ion temperature,Ti,have been measured by a double-sided retarding field analyzer（RFA） in the scrape-off layer（SOL） of the J-TEXT tokamak（R = 105 cm,r = 25-29 cm,Bt = 1.8-2.0 T,Ip = 120-180 kA,ne =（2-2.5） × 10^19 m^-3）.Strongly declining Ti profiles in the SOL have been found.The different e-folding lengths,At,of the Ti profiles in two experimental configurations with different magnetic connection lengths,Lc,reveal that a longer Lc results in weaker parallel energy transport and longer At.In similarity with the particle transport across the SOL,At is approximately proportional to the square root of Lc.Additionally,the poloidal asymmetry has been identified with enhanced ion energy transport across the SOL on the low-field side.

Effect of gas pressure on ion energy at substrate side of Ag target radio-frequency and very-high-frequency magnetron sputtering discharge

The effect of gas pressure on ion energy distribution at the substrate side of Ag target radio-frequency(RF)and very-high-frequency(VHF)magnetron sputtering discharge was investigated.At lower pressure,the evolution of maximum ion energy(E)with discharge voltage(V)varied with the excitation frequency,due to the joint contribution of the ion generation in the bulk plasma and the ion movement across the sheath related to the ion transit sheath timeτiand RF periodτRF.At higher pressure,the evolution of E–V relationships did not vary with the excitation frequency,due to the balance between the energy lost through collisions and the energy gained by acceleration in the electric field.Therefore,for RF and VHF magnetron discharge,lower gas pressure can have a clear influence on the E–V relationship.

Phase shift effects of radio-frequency bias on ion energy distribution in continuous wave and pulse modulated inductively coupled plasmas

A retarding field energy analyzer（RFEA） is used to measure the time-averaged ion energy distributions（IEDs） on the substrate in both continuous wave（CW） and synchronous pulse modulated radio-frequency（RF） inductively coupled Ar plasmas（ICPs）.The effects of the phase shift θ between the RF bias voltage and the RF source on the IED is investigated under various discharge conditions.It is found that as θ increases from 0 to π,the IED moves towards the low-energy side,and its energy width becomes narrower.In order to figure out the physical mechanism,the voltage waveforms on the substrate are also measured.The results show that as θ increases from 0 to π,the amplitude of the voltage waveform decreases and,meanwhile,the average sheath potential decreases as well.Specifically,the potential drop in the sheath on the substrate exhibits a maximum value at the same phase（i.e.,θ = 0） and a minimum value at the opposite phase（i.e.,θ = π）.Therefore,when ions traverse across the sheath region above the substrate,they obtain less energies at lower sheath potential drop,leading to lower ion energy.Besides,as θ increases from π to 2π,the IEDs and their energy widths change reversely.

Evaluation of NBI absorption and fast ion stored energy to improve thermal energy confinement time calculation in EAST

The absorption of neutral beam power and the fast ion stored energy in EAST plasmas with neutral beam injection(NBI)is analyzed to improve the calculation of thermal energy confinement time.The neutral beam power absorption and fast ion stored energy are systematically calculated using the TRANSP code,through the investigation of global parameters including plasma current,line averaged density and beam energy.Results have shown that scaling laws for the NBI absorption coefficient and fast ion energy rate are obtained through statistical analysis.A comparison of the confinement improvement factor H98y2 with these new scaling laws against those assuming fixed coefficients is given.

Computer-Controlled System for Plasma Ion Energy Auto-Analyzer

A computer-controlled system for plasma ion energy auto-analyzer was technically studied for rapid and online measurement of plasma ion energy distribution. The system intelligently controls all the equipments via a RS-232 port, a printer port and a home-built circuit. The software designed by LabVIEW G language automatically fulfils all of the tasks such as system initializing, adjustment of scanning-voltage, measurement of weak-current, data processing, graphic export, etc. By using the system, a few minutes are taken to acquire the whole ion energy distribution, which rapidly provides important parameters of plasma process techniques based on semiconductor devices and microelectronics.

Energy Transformation in Mammalian Cell for Low Energy Ion Beam Impinging

This study investigates the stopping power of a mammalian cell for low energy ions. The energy equation of the incident ion has been conducted based on the elastic collision between the pairs of nuclei in order to establish the stopping powers of the mammalian cell for low energy ion implantation. Based on the biological structure of the mammalian cell and the measured thickness of the V79 cell, a physical structural model is proposed that the attached cell is approximately of a model of a constringent multi-membrane structure （C-2M model） in order to analyse the stopping power of the mammalian cell for low energy ions. With this model we have determined the mean line energy transfer, and roughly estimated the depth of ion implantation on the selected Chinese hamster V79 cell for 30 keV N^＋ ions at a flux of 1 × 10^15 ion/cm^2, which is in agreement with those by using Monte Carlo methods.

Creation of High-Yield Polyhydroxyalkanoates Engineered Strains by Low Energy Ion Implantation

Polyhydroxyalkanoates （PHAs）, as a candidate for biodegradable plastic materials, can be synthesized by numerous microorganisms. However, as its production cost is high in comparison with those of chemically synthesized plastics, a lot of research has been focused on the efficient production of PHAs using different methods. In the present study, the mutation effects of PHAs production in strain pCB4 were investigated with implantation of low energy ions. It was found that under the implantation conditions of 7.8×10^14 N^＋/cm^2 at 10 keV, a high-yield PHAs strain with high genetic stability was generated from many mutants. After optimizing its fermentation conditions, the biomass, PHAs concentration and PHAs content of pCBH4 reached 2.26 g/L, 1.81 g/L, and 80.08% respectively, whereas its wild type controls were about 1.24 g/L, 0.61 g/L, and 49.20%. Moreover, the main constituent of PHAs was identified as poly-3-hydroxybutyrates （PHB） in the mutant stain and the yield of this compound was increased up to 41.33% in contrast to that of 27.78% in the wild type strain.

Mutation Breeding of an Organic Phosphorus-Solubilizing Bacterium B3 by Low Energy Ion Beam Implantation

A preliminary study on the mutation breeding of an organic phosphorus-solubilizing bacterium B3 by low-energy N^＋ ion beam was conducted. Analysis of dosage vs. survival rate and mutation rate showed that the dosage of 3×10^15 ions/cm^2 was optimal for the mutation. Some parameters for determining the efficient phosphorus content were studied to simplify the protocols for screening. Ultimately one reliable mutant was screened out under plating and flask-culturing screening conditions. Importantly, a novel phosphorus-dissolving mechanism is reported for the first time in terms of bio-surfactant production, which indicates that bio-surfactant might play a vital role in phosphorus-dissolving for some phosphobacteria.

Differential nonlinear photocarrier radiometry for characterizing ultra-low energy boron implantation in silicon

The measuring of the depth profile and electrical activity of implantation impurity in the top nanometer range of silicon encounters various difficulties and limitations, though it is known to be critical in fabrication of silicon complementary metal–oxide–semiconductor(CMOS) devices. In the present work, SRIM program and photocarrier radiometry(PCR)are employed to monitor the boron implantation in industrial-grade silicon in an ultra-low implantation energy range from 0.5 keV to 5 keV. The differential PCR technique, which is improved by greatly shortening the measurement time through the simplification of reference sample, is used to investigate the effects of implantation energy on the frequency behavior of the PCR signal for ultra-shallow junction. The transport parameters and thickness of shallow junction, extracted via multi-parameter fitting the dependence of differential PCR signal on modulation frequency to the corresponding theoretical model, well explain the energy dependence of PCR signal and further quantitatively characterize the recovery degree of structure damage induced by ion implantation and the electrical activation degree of impurities. The monitoring of nmlevel thickness and electronic properties exhibits high sensitivity and apparent monotonicity over the industrially relevant implantation energy range. The depth profiles of implantation boron in silicon with the typical electrical damage threshold(YED) of 5.3×10^(15)cm^(-3) are evaluated by the SRIM program, and the determined thickness values are consistent well with those extracted by the differential PCR. It is demonstrated that the SRIM and the PCR are both effective tools to characterize ultra-low energy ion implantation in silicon.

Biological Effects of Low Energy Ar^+Ion Bombardment on Silkworm Eggs:a Novel Animal Model

In this study, we found for the first time that silkworm eggs were able to survive in vacuum for a long period of time. Subsequently, 10w energy Ar＋ ions with different energies and fluences were used to bombard silkworm eggs so as to explore the resulting biological effects. Results showed that （i） the exposure of silkworm eggs to vacuum within 10 rain did not cause significant impact on the hatching rates, while the irradiation of silkworm eggs by Ar＋ ions of 25 keV or 30 keV with fiuences ranging from 2.6×2.6× 10^15 ion/cm2 to 8×2.6 × 10^15 ion/cm2 caused a significant impact on the hatching rates, and the hatching rates decreased with the increase in the fluence and energy level; （ii） the irradiation of silkworm eggs by Ar＋ ions of 30 keV with a fluence of 8×2.6 × 10^15 ion/cm2 or 9×2.6 × 10^15 ion/cm2 resulted in a noticeable etching on the egg shell surface which could be observed by a scanning electron microscope; and （iii） the irradiation of silkworm eggs by Ar＋ ions of generated several mutant phenotypes which were 30 keV with a fiuence of 9×2.6× 10^15 ion/cm2 observed in the 5th instar silkworms and a moth.

Aligned Elongation of Ag Nanoparticles Embedded in Silica Irradiated with High Energy Ni Ions

Metallic nanoparticle （NP） shapes have a significant influence on the property of composite embedded with metallic NPs. Swift heavy ion irradiation is an effective way to modify shapes of metallic NPs embedded in an amorphous matrix. We investigate the shape deformation of Ag NPs with irradiation fluence, and 357 MeV Ni ions are used to irradiate the silica containing Ag NPs, which are prepared by ion implantation and vacuum annealing. The UV-vis results show that the surface plasmon resonance （SPR） peak from Ag NPs shifts from 400 to 377nm. The SPR peak has a significant shift at fluence lower than 1 × 10^14 ions/cm2 and shows less shift at fluence higher than 1 × 10^14 ions/cm2. The TEM results reveal that the shapes of Ag NPs also show significant deformation at fluence lower than 1 × 10^14 ions/cm2 and show less deformation at fluence higher than 1 × 10^14 ions/cm2. The blue shift of the SPR peak is considered to be the consequence of defect production and Ag NP shape deformation, Based on the thermal spike model calculation, the temperature of the silica surrounding Ag particles first increases rapidly, then the region of Ag NPs close to the interface of Ag/silica is gradually heated. Therefore, the driven force of Ag NPs deformation is considered as the volume expansion of the first heated silica layer surrounding Ag NPs.