The effective ionization coefficients and electron drift velocities in gas mixtures of CF_3I with N_2 and CO_2 obtained from Boltzmann equation analysis

The electron swarm parameters including the density-normalized effective ionization coefficients（α-η）/N and the electron drift velocities V e are calculated for a gas mixture of CF3I with N2 and CO2 by solving the Boltzmann equation in the condition of a steady-state Townsend（SST） experiment.The overall density-reduced electric field strength is from 100 Td to 1000 Td（1 Td = 10-17V·cm2）,while the CF3I content k in the gas mixture can be varied over the range from 0% to 100%.From the variation of（αη）/N with the CF3I mixture ratio k,the limiting field strength（E/N） lim for each CF3I concentration is derived.It is found that for the mixtures with 70% CF3I,the values of（E/N） lim are essentially the same as that for pure SF 6.Additionally,the global warming potential（GWP） and the liquefaction temperature of the gas mixtures are also taken into account to evaluate the possibility of application in the gas insulation of power equipment.

Electron Transport Coefficients and Effective Ionization Coefficients in SF_6-O_2 and SF_6-Air Mixtures Using Boltzmann Analysis

The electron drift velocity, electron energy distribution function （EEDF）, densitynormalized effective ionization coefficient and density-normalized longitudinal diffusion velocity are calculated in SF6-O2 and SFs-Air mixtures. The experimental results from a pulsed Townsend discharge are plotted for comparison with the numerical results. The reduced field strength varies from 40 Td to 500 Td （1 Townsend=10-17 V.cm2） and the SF6 concentration ranges from 10% to 100%. A Boltzmann equation associated with the two-term spherical harmonic expansion approximation is utilized to gain the swarm parameters in steady-state Townsend. Results show that the accuracy of the Boltzlnann solution with a two-term expansion in calculating the electron drift velocity, electron energy distribution function, and density-normalized effective ionization coefficient is acceptable. The effective ionization coefficient presents a distinct relationship with the SF6 content in the mixtures. Moreover, the E/Ncr values in SF6-Air mixtures are higher than those in SF6-O2 mixtures and the calculated value E/Ncr in SF6-O2 and SF6-Air mixtures is lower than the measured value in SFB-N2. Parametric studies conducted on these parameters using the Boltzmann analysis offer substantial insight into the plasma physics, as well as a basis to explore the ozone generation process.

Total Ionization Dose Effects on Charge Storage Capability of Al2O3/HfO2/Al2O3-Based Charge Trapping Memory Cell

Because of the discrete charge storage mechanism, charge trapping memory（CTM） technique is a good candidate for aerospace and military missions. The total ionization dose（TID） effects on CTM cells with Al2O3/HfO2/Al2O3（AHA） high-k gate stack structure under in-situ 10 keV x-rays are studied. The C-V characteristics at different radiation doses demonstrate that charge stored in the device continues to be leaked away during the irradiation,thereby inducing the shift of flat band voltage（V（fb））. The dc memory window shows insignificant changes, suggesting the existence of good P/E ability. Furthermore, the physical mechanisms of TID induced radiation damages in AHA-based CTM are analyzed.

Machine learning-based analyses for total ionizing dose effects in bipolar junction transistors

Machine learning methods have proven to be powerful in various research fields.In this paper,we show that research on radiation effects could benefit from such methods and present a machine learning-based scientific discovery approach.The total ionizing dose(TID)effects usually cause gain degradation of bipolar junction transistors(BJTs),leading to functional failures of bipolar integrated circuits.Currently,many experiments of TID effects on BJTs have been conducted at different laboratories worldwide,producing a large amount of experimental data which provides a wealth of information.However,it is difficult to utilize these data effectively.In this study,we proposed a new artificial neural network(ANN)approach to analyze the experimental data of TID effects on BJTs An ANN model was built and trained using data collected from different experiments.The results indicate that the proposed ANN model has advantages in capturing nonlinear correlations and predicting the data.The trained ANN model suggests that the TID hardness of a BJT tends to increase with base current I.A possible cause for this finding was analyzed and confirmed through irradiation experiments.

Suppressing the hot carrier injection degradation rate in total ionizing dose effect hardened nMOSFETs

Annular gate nMOSFETs are frequently used in spaceborne integrated circuits due to their intrinsic good capability of resisting total ionizing dose （TID） effect. However, their capability of resisting the hot carrier effect （HCE） has also been proven to be very weak. In this paper, the reason why the annular gate nMOSFETs have good TID but bad HCE resistance is discussed in detail, and an improved design to locate the source contacts only along one side of the annular gate is used to weaken the HCE degradation. The good TID and HCE hardened capability of the design are verified by the experiments for I/O and core nMOSFETs in a 0.18 μm bulk CMOS technology. In addition, the shortcoming of this design is also discussed and the TID and the HCE characteristics of the replacers （the annular source nMOSFETs） are also studied to provide a possible alternative for the designers.

Experimental study on radiation effects in floating gate read-only-memories and static random access memories

Radiation effects of the floating gate read-only-memory （FG ROM） and the static random access memory （SRAM） have been evaluated using the 14 MeV neutron and 31.9MeV proton beams and Co-60 γ-rays. The neutron fluence, when the first error occurs in the FG ROMs, is at least 5 orders of magnitude higher than that in the SRAMs, and the proton fluence, 4 orders of magnitude higher. The total dose threshold for Co-60 γ-ray irradiation is about 104 rad （Si） for both memories. The difference and similarity are attributed to the structure of the memory cells and the mechanism of radiation effects. It is concluded that the FG ROMs are more reliable as semiconductor memories for storing data than the SRAMs, when they are used in the satellites or space crafts exposed to high energy particle radiation.

Total Ionizing Dose Radiation Effects in the P-Type Polycrystalline Silicon Thin Film Transistors

The total ionizing dose radiation effects in the polycrystalline silicon thin film transistors are studied. Transfer characteristics, high-frequency capacitance-voltage curves and low-frequency noises (LFN) are measured before and after radiation. The experimental results show that threshold voltage and hole-field-effect mobility decrease, while sub-threshold swing and low-frequency noise increase with the increase of the total dose. The contributions of radiation induced interface states and oxide trapped charges to the shift of threshold voltage are also estimated. Furthermore, spatial distributions of oxide trapped charges before and after radiation are extracted based on the LFN measurements.

Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory

The impact of ionizing radiation effect on single event upset（SEU） sensitivity of ferroelectric random access memory（FRAM） is studied in this work. The test specimens were firstly subjected to ^60Co γ-ray and then the SEU evaluation was conducted using ^209Bi ions. As a result of TID-induced fatigue-like and imprint-like phenomena of the ferroelectric material, the SEU cross sections of the post-irradiated devices shift substantially. Different trends of SEU cross section with elevated dose were also found, depending on whether the same or complementary test pattern was employed during the TID exposure and the SEU measurement.

EQUATION OF STATE CALCULATIONS FOR HOT, DENSE MATTER AT ARBITRARY DENSITIES AND TEMPERATURES

Within the approximations of spherical lattice cell, central-field, and relativistic Fermi statis- tics, an algorithm with average atom model is presented to calculate the electronic energy levels and equation of state for hot and dense matter at arbitrary densities and temperatures. Choosing Zink's analytical potential as initial potential, we have solved the Dirac-Slater equation which satisfies the Weigner-Seitz boundary condition. The electronic energy bands are not taken into account. Tak- ing energy level degeneracy as a continuous function of density, we have considered the pressure ionization effects for highly dense matter. Results for ^(13)Al atom are shown.

Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices

The 1-Mb and 4-Mb commercial toggle magnetoresistive random-access memories（MRAMs） with 0.13 μm and 0.18-μm complementary metal–oxide–semiconductor（CMOS） process respectively and different magnetic tunneling junctions（MTJs） are irradiated with a Cobalt-60 gamma source. The electrical functions of devices during the irradiation and the room temperature annealing behavior are measured. Electrical failures are observed until the dose accumulates to 120-krad（Si） in 4-Mb MRAM while the 1-Mb MRAM keeps normal. Thus, the 0.13-μm process circuit exhibits better radiation tolerance than the 0.18-μm process circuit. However, a small quantity of read bit-errors randomly occurs only in 1-Mb MRAM during the irradiation while their electrical function is normal. It indicates that the store states of MTJ may be influenced by gamma radiation, although the electrical transport and magnetic properties are inherently immune to the radiation. We propose that the magnetic Compton scattering in the interaction of gamma ray with magnetic free layer may be the origin of the read bit-errors. Our results are useful for MRAM toward space application.

Carrier-envelope-phase effect in nonsequential double ionization of Ar atoms by few-cycle laser pulses

A classical ensemble method is used to investigate nonsequential double ionization（NSDI） of Ar atoms irradiated by linearly polarized few-cycle laser pulses. The correlated-electron momentum distribution（CMD） exhibits a strong dependence on the carrier-envelope phase（CEP）. When the pulse duration is four cycles, the CMD shows a cross-like structure, which is consistent with experimental results. The CEP dependence is more notable when the laser pulse duration is decreased to two cycles and a special L-shaped structure appears in CMD. Recollision time of returning electrons greatly depends on CEP, which plays a significant role in accounting for the appearance of this structure.

Comparison of radiation degradation induced by x-ray and 3-MeV protons in 65-nm CMOS transistors

The total ionizing dose（TID） response of 65-nm CMOS transistors is studied by 10-ke V x-ray and 3-Me V protons up to 1 Grad（SiO_2） total dose.The degradation levels induced by the two radiation sources are different to some extent.The main reason is the interface dose enhancement due to the thin gate oxide and the low energy photons.The holes＇ recombination also contributes to the difference.Compared to these two mechanisms,the influence of the dose rate is negligible.

DSMC modeling of rarefied ionization reactions and applications to hypervelocity spacecraft reentry flows

The DSMC modeling is developed to simulate three-dimensional(3D)rarefied ionization flows and numerically forecast the communication blackout around spacecraft during hypervelocity reentry.A new weighting factor scheme for rare species is introduced,whose key point is to modify the corresponding chemical reaction coefficients involving electrons,meanwhile reproduce the rare species in resultants and preserve/delete common species in reactants according to the weighting factors.The resulting DSMC method is highly efficient in simulating weakly inhomogeneous flows including the Couette shear flow and controlling statistical fluctuation with high resolution.The accurate reliability of the present DSMC modeling is also validated by the comparison with a series of experimental measurements of the Shenzhou reentry capsule tested in a low-density wind tunnel from the HAI of CARDC.The obtained electron number density distribution for the RAM-C II vehicle agrees well with the flight experiment data,while the electron density contours for the Stardust hypervelocity reentry match the reference data completely.In addition,the present 3D DSMC algorithm can capture distribution of the electron,N+and O+number densities better than the axis-symmetric DSMC model.The introduction of rare species weighting factor scheme can significantly improve the smoothness of the number density contours of rare species,especially for that of electron in weak ionization case,while it has negligible effect on the macroscopic flow parameters.The ionization characteristics of the Chinese lunar capsule reentry process are numerically analyzed and forecasted in the rarefied transitional flow regime at the flying altitudes between 80 and 97 km,and the simulations predict communication blackout altitudes which are in good agreement with the actual reentry flight data.For the spacecraft reentry with hypervelocity larger than the second cosmic speed,it is forecasted and verified by the present DSMC modeling that ionization reactions will cover the windward capsule surface,leading to reentry communication blackout,and the communication interruption must be considered in the communication design during reentry in rarefied flow regimes.

Synergistic effect of ozonation and ionizing radiation for PVA decomposition

Ozonation and ionizing radiation are both advanced oxidation processes（AOPs） without chemical addition and secondary pollution. Also, the two processes＇ efficiency is determined by different p H conditions, which creates more possibilities for their combination. Importantly,the combined process of ozonation and ionizing radiation could be suitable for treating wastewaters with extreme p H values, i.e., textile wastewater. To find synergistic effects, the combined process of ozonation and ionizing radiation mineralization was investigated for degradation of polyvinyl alcohol（PVA） at different p H levels. A synergistic effect was found at initial p H in the range 3.0–9.4. When the initial p H was 3.0, the combined process of ozonation and ionizing radiation gave a PVA mineralization degree of 17%. This was 2.7 times the sum achieved by the two individual processes, and factors of 2.1 and 1.7 were achieved at initial p H of7.0 and 9.4, respectively. The combined process of ozonation and ionizing radiation was demonstrated to be a feasible strategy for treatment of PVA-containing wastewater.

The total ionizing dose effects of non-planar triple-gate transistors

This paper investigates the total ionizing dose response of different non-planar triple-gate transistor structures with different fin widths. By exposing the pseudo-MOS transistor to different amounts of radiation, different interface trap densities and trapped-oxide charges can be obtained. Using these parameters together with Altal 3D simulation software, the total dose radiation response of various non-planar triple-gate devices can be simulated. The behaviors of three kinds of non-planar devices are compared.

Total dose ionizing irradiation effects on a static random access memory field programmable gate array

SRAM-based FPGA devices are irradiated by ^（60）Coγrays at various aose rates 10 investigate total dose effects and the evaluation method.The dependences of typical electrical parameters such as static power current, peak-peak value,and delay time on total dose are discussed.The experiment results show that the static power current of the devices reduces rapidly at room temperature（25℃） and high temperature（80℃） annealing after irradiation.When the device is irradiated at a low dose rate,the delay time and peak-peak value change unobviously with an increase in the accumulated dose.In contrast,the function parameters completely fail at 2.1 kGy（Si） when the dose rate increases to 0.71 Gy（Si）/s.

Performance comparison of radiation-hardened layout techniques

Total ionizing dose （TID） effect and single event effect （SEE） from space may cause serious effects on bulk silicon and silicon on insulator （SOl） devices, so designers must pay much attention to these bad effects to achieve better performance. This paper presents different radiation-hardened layout techniques to mitigate TID and SEE effect on bulk silicon and SOl device and their corresponding advantages and disadvantages are studied in detail. Under 0.13μm bulk silicon and SOl process technology, performance comparisons of two different kinds of DFF circuit are made, of which one kind is only hardened in layout （protection ring for bulk silicon DFF, T-gate for SO! DFF）, while the other kind is also hardened in schematic such as DICE structure. The result shows that static power and leakage of SOI DFF is lower than that of bulk silicon DFF, while SOI DFF with T-gate is a little slower than bulk silicon DFF with protection ring, which will provide useful guidance for radiation-hardened circuit and layout design.

Study of radiation-induced leakage current between adjacent devices in a CMOS integrated circuit

Radiation-induced inter-device leakage is studied using an analytical model and TCAD simulation. There were some different opinions in understanding the process of defect build-up in trench oxide and parasitic leakage path turning on from earlier studies.To reanalyze this problem and make it beyond argument,every possible variable is considered using theoretical analysis,not just the change of electric field or oxide thickness independently. Among all possible inter-device leakage paths,parasitic structures with N-well as both drain and source are comparatively more sensitive to the total dose effect when a voltage discrepancy exists between the drain and source region.Since N-well regions are commonly connected to the same power supply,these kinds of structures will not be a problem in a real CMOS integrated circuit.Generally speaking,conduction paths of inter-device leakage existing in a real integrated circuit and under real electrical circumstances are not very sensitive to the total ionizing dose effect.