EFFECT OF IRRADIATION TEMPERATURE ON GENERAL EQUATION OF SOL FRACTION-DOSE RELATIONSHIP FOR FLUOROPOLYMERS

In this paper, the effect of irradiation temperature on sol fraction-dose relationship of tluoropolymers was studied. It was found that the increasing of irradiation temperature can result in the decreasing of β value of fluoropolymer, which increases the crosslinking probability of fluoropolymer. The relationship between crosslinking parameter β and irradiation temperature (T_i)of fluoropolymer is established as follows:β=2.2×10^(-3) T_g+4×10^(-4)(T_g-T_i)+0.206.values of some tluoropolymers calculated from the above expression are in agreement with the experimental values.

Application of silicon carbide temperature monitors in 49-2 swimming-pool test reactor

High purity SiC crystal was used as a passive monitor to measure neutron irradiation temperature in the 49-2 research reactor.The SiC monitors were irradiated with fast neutrons at elevated temperatures to 3.2×10^(20)n/cm^(2).The isochronal and isothermal annealing behaviors of the irradiated SiC were investigated by x-ray diffraction and four-point probe techniques.Invisible point defects and defect clusters are found to be the dominating defect types in the neutron-irradiated SiC.The amount of defect recovery in SiC reaches a maximum value after isothermal annealing for 30 min.Based on the annealing temperature dependences of both lattice swelling and material resistivity,the irradiation temperature of the SiC monitors is determined to be~410℃,which is much higher than the thermocouple temperature of 275℃ recorded during neutron irradiation.The possible reasons for the difference are carefully discussed.

Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor

The mechanisms occurring when the switched temperature technique is applied, as an accelerated enhanced low dose rate sensitivity （ELDRS） test technique, are investigated in terms of a specially designed gate-controlled lateral PNP transistor （GLPNP） that used to extract the interface traps （Nit） and oxide trapped charges （Not）. Electrical characteristics in GLPNP transistors induced by 60Co gamma irradiation are measured in situ as a function of total dose, showing that generation of Nit in the oxide is the primary cause of base current variations for the GLPNP. Based on the analysis of the variations of Nit and Not, with switching the temperature, the properties of accelerated protons release and suppressed protons loss play critical roles in determining the increased Nit formation leading to the base current degradation with dose accumulation. Simultaneously the hydrogen cracking mechanisms responsible for additional protons release are related to the neutralization of Not extending enhanced Nit buildup. In this study the switched temperature irradiation has been employed to conservatively estimate the ELDRS of GLPNP, which provides us with a new insight into the test technique for ELDRS.

Effect of Treatment Temperature on Iron Nitride Foils Irradiated with Nitrogen Plasma

We investigated the effect of treatment temperature on the magnetic property of iron nitride foils irradiated with nitrogen plasma. The iron nitride foils irradiated with nitrogen plasma were composed of ε-Fe2/3N, γ'-Fe4N and γ nitrogen austenite in α-Fe of the matrix. The saturation magnetization of the iron nitride foils decreased with increasing the surface temperature. The coercive force of the iron nitride foils increased with increasing the surface temperature.

Microstructure and properties of indium tin oxide thin films deposited by RF-magnetron sputtering

Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1：1 at various IR irradiation temperatures T1 （from room temperature to 400℃）. The refractive index, deposited ratio, and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR T1, the crystalline seeds appear at T1= 300℃, and the films are amorphous at the temperature ranging from 27℃ to 400℃. AFM investigation shows that the roughness value of peak-valley of ITO thin film （Rp-v） and the surface microstructure of rio thin films have a close relation with T1. The IR irradiation results in a widening value of band-gap energy due to Burstein-Moss effect and the maximum visible transmittance shifts toward a shorter wavelength along with a decrease in the film＇s refractive index. The plasma wavelength and the refractive index of ITO thin films are relative to the T1. XPS investigation shows that the photoelectrolytic properties can be deteriorated by the sub-oxides. The deterioration can be decreased by increasing the oxygen flow rote （fo2）, and the mole ratio of Sn/In in the samples reduces with an increase info2.

PV based water pumping system for agricultural irrigation

This paper investigates the operation and analysis of the photovoltaic water pumping system in detail. Power electronic controllers were designed and developed for the water pumping system using a boost converter along with an inverter followed by an induction motor pump set. The proposed system could be employed in agricultural irrigation under any operating condition of varying natures of solar irradiances and temperatures. The configuration and implementation of the system were described in detail. Further, the detailed method of analysis and simulation characteristics of such PV water pumping system was also presented. With the concern of shortage of fossil fuel, global warming and energy security, the proposed PV based water pumping significant demand of electricity agricultural sector. system can meet the and serve for the