Isolated extended drain NMOS（EDNMOS） transistors are widely used in power signal processing.The hole current induced by a high electric field can result in a serious reliability problem due to a parasitic NPN effect...Isolated extended drain NMOS（EDNMOS） transistors are widely used in power signal processing.The hole current induced by a high electric field can result in a serious reliability problem due to a parasitic NPN effect. By optimizing p-type epitaxial（p-epi） thickness,n-type buried layer（BLN） and nwell doping distribution,the peak electric field is decreased by 30%and the peak hole current is decreased by 60%,which obviously suppress the parasitic NPN effect.Measured I-V characteristics and transmission line pulsing（TLP） results show that the onstate breakdown voltage is increased from 28 to 37 V when 6 V Vgs is applied and the energy capability is improved by about 30%,while the on-state resistance remains unchanged.展开更多
文摘Isolated extended drain NMOS（EDNMOS） transistors are widely used in power signal processing.The hole current induced by a high electric field can result in a serious reliability problem due to a parasitic NPN effect. By optimizing p-type epitaxial（p-epi） thickness,n-type buried layer（BLN） and nwell doping distribution,the peak electric field is decreased by 30%and the peak hole current is decreased by 60%,which obviously suppress the parasitic NPN effect.Measured I-V characteristics and transmission line pulsing（TLP） results show that the onstate breakdown voltage is increased from 28 to 37 V when 6 V Vgs is applied and the energy capability is improved by about 30%,while the on-state resistance remains unchanged.
