A new method for reducing the substrate rated losses of integrated spiral inductors is presented.The method is to block the eddy currents induced by spiral inductors by directly forming pn junction isolation in the S...A new method for reducing the substrate rated losses of integrated spiral inductors is presented.The method is to block the eddy currents induced by spiral inductors by directly forming pn junction isolation in the Si substrate. The substrate pn junction can be realized by using the standard silicon technologies without any additional processing steps.Integrated inductors on silicon are designed and fabricated. S parameters of the inductor based equivalent circuit are investigated and the inductor parameters are calculated.The impacts of the substrate pn junction isolation on the inductor quality factor are studied.The experimental results show that substrate pn junction isolation in certain depth has achieved a significant improvement.At 3GHz,the substrate pn junction isolation increases the inductor quality factor by 40%.展开更多
文摘A new method for reducing the substrate rated losses of integrated spiral inductors is presented.The method is to block the eddy currents induced by spiral inductors by directly forming pn junction isolation in the Si substrate. The substrate pn junction can be realized by using the standard silicon technologies without any additional processing steps.Integrated inductors on silicon are designed and fabricated. S parameters of the inductor based equivalent circuit are investigated and the inductor parameters are calculated.The impacts of the substrate pn junction isolation on the inductor quality factor are studied.The experimental results show that substrate pn junction isolation in certain depth has achieved a significant improvement.At 3GHz,the substrate pn junction isolation increases the inductor quality factor by 40%.
