扩散工艺至今仍是包括半导体光电器件在内的半导体器件和集成电路制造中的重要工艺步骤。但 Si 的扩散工艺中往往只测量扩散后的方块电阻。我们通过分析和实际测量 Si 扩散后的主要参数:方块电阻、结深、表面杂质浓度及杂质浓度分布,其...扩散工艺至今仍是包括半导体光电器件在内的半导体器件和集成电路制造中的重要工艺步骤。但 Si 的扩散工艺中往往只测量扩散后的方块电阻。我们通过分析和实际测量 Si 扩散后的主要参数:方块电阻、结深、表面杂质浓度及杂质浓度分布,其相互关系表明,对于评价掺杂的总质量,只测量方块电阻是不全面的。而测量杂质浓度或杂质浓度分布,将是检查扩散层质量的较好方法。展开更多
The measuring of the depth profile and electrical activity of implantation impurity in the top nanometer range of silicon encounters various difficulties and limitations, though it is known to be critical in fabricati...The measuring of the depth profile and electrical activity of implantation impurity in the top nanometer range of silicon encounters various difficulties and limitations, though it is known to be critical in fabrication of silicon complementary metal–oxide–semiconductor(CMOS) devices. In the present work, SRIM program and photocarrier radiometry(PCR)are employed to monitor the boron implantation in industrial-grade silicon in an ultra-low implantation energy range from 0.5 keV to 5 keV. The differential PCR technique, which is improved by greatly shortening the measurement time through the simplification of reference sample, is used to investigate the effects of implantation energy on the frequency behavior of the PCR signal for ultra-shallow junction. The transport parameters and thickness of shallow junction, extracted via multi-parameter fitting the dependence of differential PCR signal on modulation frequency to the corresponding theoretical model, well explain the energy dependence of PCR signal and further quantitatively characterize the recovery degree of structure damage induced by ion implantation and the electrical activation degree of impurities. The monitoring of nmlevel thickness and electronic properties exhibits high sensitivity and apparent monotonicity over the industrially relevant implantation energy range. The depth profiles of implantation boron in silicon with the typical electrical damage threshold(YED) of 5.3×10^(15)cm^(-3) are evaluated by the SRIM program, and the determined thickness values are consistent well with those extracted by the differential PCR. It is demonstrated that the SRIM and the PCR are both effective tools to characterize ultra-low energy ion implantation in silicon.展开更多
设计了一款800 V VDMOS终端结构,采用场限环(FLR)与场板(FP)相结合的方式,在场限环上添加多晶硅场板与金属场板,有效地降低了表面电场峰值。通过调整终端结构,在135μm的有效终端长度上实现了848 V的击穿电压,最大表面电场为2.34×1...设计了一款800 V VDMOS终端结构,采用场限环(FLR)与场板(FP)相结合的方式,在场限环上添加多晶硅场板与金属场板,有效地降低了表面电场峰值。通过调整终端结构,在135μm的有效终端长度上实现了848 V的击穿电压,最大表面电场为2.34×105 V/cm,小于工业界判断器件击穿场强标准(2.5×105 V/cm),且电场分布比较均匀,终端结构的稳定性和可靠性高。展开更多
文摘扩散工艺至今仍是包括半导体光电器件在内的半导体器件和集成电路制造中的重要工艺步骤。但 Si 的扩散工艺中往往只测量扩散后的方块电阻。我们通过分析和实际测量 Si 扩散后的主要参数:方块电阻、结深、表面杂质浓度及杂质浓度分布,其相互关系表明,对于评价掺杂的总质量,只测量方块电阻是不全面的。而测量杂质浓度或杂质浓度分布,将是检查扩散层质量的较好方法。
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 61771103, 61704023, and 61601092)。
文摘The measuring of the depth profile and electrical activity of implantation impurity in the top nanometer range of silicon encounters various difficulties and limitations, though it is known to be critical in fabrication of silicon complementary metal–oxide–semiconductor(CMOS) devices. In the present work, SRIM program and photocarrier radiometry(PCR)are employed to monitor the boron implantation in industrial-grade silicon in an ultra-low implantation energy range from 0.5 keV to 5 keV. The differential PCR technique, which is improved by greatly shortening the measurement time through the simplification of reference sample, is used to investigate the effects of implantation energy on the frequency behavior of the PCR signal for ultra-shallow junction. The transport parameters and thickness of shallow junction, extracted via multi-parameter fitting the dependence of differential PCR signal on modulation frequency to the corresponding theoretical model, well explain the energy dependence of PCR signal and further quantitatively characterize the recovery degree of structure damage induced by ion implantation and the electrical activation degree of impurities. The monitoring of nmlevel thickness and electronic properties exhibits high sensitivity and apparent monotonicity over the industrially relevant implantation energy range. The depth profiles of implantation boron in silicon with the typical electrical damage threshold(YED) of 5.3×10^(15)cm^(-3) are evaluated by the SRIM program, and the determined thickness values are consistent well with those extracted by the differential PCR. It is demonstrated that the SRIM and the PCR are both effective tools to characterize ultra-low energy ion implantation in silicon.
