Heavy Ion and Laser Microbeam Induced Current Transients in SiGe Heterojunction Bipolar Transistor

Silicon-germanium （SiGe） hereto-junction bipolar transistor current transients induced by pulse laser and heavy iron are measured using a real-time digital oscilloscope. These transients induced by pulse laser and heavy iron exhibit the same waveform and charge collection time except for the amplitude of peak current. Different laser energies and voltage biases under heavy ion irradiation also have impact on current transient, whereas the waveform remains unchanged. The position-correlated current transients suggest that the nature of the current transient is controlled by the behavior of the C/S junction.

Effect of inhomogeneous broadening on threshold current of GaN-based green laser diodes

The inhomogeneous broadening parameter and the internal loss of green LDs are determined by experiments and theoretical fitting. It is found that the inhomogeneous broadening plays an important role on the threshold current density of green LDs. The green LD with large inhomogeneous broadening even cannot lase. Therefore, reducing inhomogeneous broadening is a key issue to improve the performance of green LDs.

Effect of Droop Phenomenon in InGaN/GaN Blue Laser Diodes on Threshold Current

Electroluminescence （EL） and temperature-dependent photolumineseenee measurements are performed to study the internal quantum efficiency droop phenomenon of blue laser diodes （LDs） before lasing. Based on the ABC mode, the EL result demonstrates that non-radiative recombination rates of LDs with threshold current densities of 4 and 6kA/cm2 are similar, while LD with threshold current density of 4kA/cm2 exhibits a smaller auger- like recombination rate compared with the one of 6kA/cm2. The internal quantum efficiency droop is more serious for LD with higher threshold current density. temperature-dependent photoluminescence is consistent The internal quantum efficiency value estimated from with EL measurements.

Current transport in ZnO/Si heterostructure grown by laser molecular beam epitaxy

The n-ZnO/p-Si heterojunction was fabricated by depositing high quality single crystalline aluminium-doped n-type ZnO film on p-type Si using the laser molecular beam epitaxy technique. The heterojunction exhibited a good rectifying behavior. The electrical properties of the heterojunction were investigated by means of temperature dependence current density-voltage measurements. The mechanism of the current transport was proposed based on the band structure of the heterojunction. When the applied bias V is lower than 0.15 V, the current follows the Ohmic behavior. When 0.15 V ~ V 〈 0.6 V, the transport property is dominated by diffusion or recombination in the junction space charge region, while at higher voltages （V 〉 0.6 V）, the space charge limited effect becomes the main transport mechanism. The current-voltage characteristic under illumination was also investigated. The photovoltage and the short circuit current density of the heterojunction aproached 270 mV and 2.10 mA/cm^2, respectively.

Frequency-locking and threshold current-lowering effects of a quantum cascade laser and an application in gas detection field

In this paper,the frequency-locking and threshold current-lowering effects of a quantum cascade laser are studied and achieved.Combined with cavity-enhanced absorption spectroscopy,the noninvasive detection of H_2 with a prepared concentration of 500 ppm in multiple dissolved gases is performed and evaluated.The high frequency selectivity of 0.0051 cm^-1 at an acquisition time of 1 s allows the sensitive detection of the（1-0） S（l） band of H_2 with a high accuracy of（96.53±0.29）%and shows that the detection limit to an absorption line of 4712.9046 cm^-1 is approximately（17.26±0.63） ppm at an atmospheric pressure and a temperature of 20 ℃.

Laser Driver for Optic Fiber Gyro with 4 mA to 200 mA Drive Current

Abstract---The stability of the drive current is very important for a laser driver, while it is difficult to maintain the current stable at a high value for the laser driver. On the other hand, the range of the drive current is expected to be as wide as possible to be applied to different kinds of lasers. In this paper, a high current laser driver for the superluminescent light emitting diode （SLED） is presented, which is used in the optic fiber gyro embedded by a 0.35 μm bipolar complementary metal-oxide-semiconductor transistor （BiCMOS） process. The laser driver provides automatic power control and certain value of current determined by the external resister. The system is based on the optic-electric feedback theory and uses the closed-loop control technique to maintain the drive current stable. The system is capable of producing stable current ranges from 4 mA to 200 mA when the value of external resister changes.

Development of Surface Grating Distributed Feedback Quantum Cascade Laser for High Output Power and Low Threshold Current Density

We report on the room-temperature cascade laser （QCL） at λ -4.7μm. cw operation of a surface grating Both grating design and material distributed feedback （DFB） quantum optimization are used to decrease the threshold current density and to increase the output power. For a high-reflectivity-coated 13-μm-wide and 4- mm-long laser, high wall-plug efficiency of 6% is obtained at 20℃ from a single facet producing over I W of ew output power. The threshold current density of DFB QCL is as low as 1.13kA/cm^2 at 10℃ and 1.34kA/cm2 at 30℃ in cw mode. Stable single-mode emission with a side-mode suppression ratio of about 30 dB is observed in tile working temperature range of 20-50℃.

Single-mode low threshold current multi-hole vertical-cavity surface-emitting lasers

A multi-hole vertical-cavity surface-emitting laser （VCSEL） operating in stable single mode with a low threshold current was produced by introducing multi-leaf scallop holes on the top distributed Bragg-refleetor of an oxidation- confined 850 nm VCSEL. The single-mode output power of 2.6 mW, threshold current of 0.6 mA, full width of half maximum lasing spectrum of less than 0.1 nm, side mode suppression ratio of 28.4 dB, and far-field divergence angle of about 10% are obtained. The effects of different hole depths on the optical characteristics are simulated and analysed, including far-field divergence, spectrum and lateral cavity mode. The single-mode performance of this multi-hole device is attributed to the large radiation loss from the inter hole spacing and the scattering loss at the bottom of the holes, particularly for higher order modes.

High power 2-μm room-temperature continuous-wave operation of GaSb-based strained quantum-well lasers

A high power GaSb-based laser diode with lasing wavelength at 2 μm was fabricated and optimized. With the optimized epitaxial laser structure, the internal loss and the threshold current density decreased and the internal quantum efficiency increased. For uncoated broad-area lasers, the threshold current density was as low as 144 A/cm2 （72 A/cm^2 per quantum well）, and the slope efficiency was 0.2 W/A. The internal loss was 11 cm^-1 and the internal quantum efficiency was 27.1%. The maximum output power of 357 mW under continuous-wave operation at room temperature was achieved. The electrical and optical properties of the laser diode were improved.

Mechanism of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures via laser annealing

The physical mechanisms of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures by laser annealing and rapid thermal annealing are systematically investigated. The microstructures indicate that a better surface morphology and an intact contact interface are formed after laser annealing. None of the TiN alloy spikes are formed at the interface of the laser annealing sample. The experimental results show that the current transport mechanism through the ohmic contact after laser annealing is different from the conventional spike mechanism, and it is dominated by thermionic field emission.

An Experimental Study on the Temperature Characteristic of a 940 nm Semiconductor Laser Diode

This paper is focused on a 940 nm edge type of semiconductor laser, which is made from 940 nm InGaAs double-quantum-well epitaxial wafer, produced by Metal Organic Chemical Vapor Deposition (MOCVD). In the absence of coating, the efficiency at the room temperature is 0.89 W/A, and the averaged threshold current is 0.307 A. The present study investigates the impact of temperature on the P-I curve, V-I curve and the centre wavelength, the temperature ranging from 286.15 - 333.15 K. It shows that the threshold current increases from 0.28 A to 0.41 A with the increasing temperature. The increase rate is 0.0027 A/K. With the temperature ranging from 286.15 - 333.15 K, the characteristic temperature is calculated to be 120 K. At driven current of 2 A, the output power decreases from 1.47 W to 1.27 W at a rate of 0.00425 W/K. At a constant voltage, the output current initially increases with the temperature within a certain range, beyond which the impact of the temperature is minimum. The ideal factor obtained from V-I curve by curve fitting is 1.076. The series resistance is 0.609 Ω. The centre wavelength shifts to a longer wavelength with the increasing temperature at a rate of 0.275288 nm/K.

Very low threshold operation of quantum cascade lasers

A strain-compensated InP-based quantum cascade laser（QCL） structure emitting at 4.6 μm is demonstrated,based on a two-phonon resonant design and grown by solid-source molecular beam epitaxy（MBE）.By optimizing the growth parameters,a very high quality heterostructure with the lowest threshold current densities ever reported for QCLs was fabricated.Threshold current densities as low as 0.47 kA/cm^2 in pulsed operation and 0.56 kA/cm^2 in continuous-wave（cw） operation at 293 K were achieved for this state-of-the-art QCL.A minimum power consumption of 3.65 W was measured for the QCL,uncooled,with a high-reflectivity（HR） coating on its rear facet.

CHARACTERISTICS OF DROPLET TRANSFER IN CO_2 LASER-MIG HYBRID WELDING WITH SHORTCIRCUITING MODE

LF6 aluminum alloy plates with 4.5 mm thickness are welded in this experiment. Welding is carried out by using the CO2 laser-MIG paraxial hybrid welding in fiat position. The experimental results indicate that the inherent droplet transfer cycle time of conventional MIG arc is changed due to the interaction between CO2 laser beam and MIG arc in the short-circuiting mode of laser-MIG hybrid welding. Because of the preheating action of CO2 laser to electrode and base material, the droplet transfer frequency of MIG arc is increased in the hybrid welding process. When laser power is increased to a certain degree, the droplet transfer frequency is decreased due to the effect of laser-induced keyhole. Furthermore, through analyzing the MIG welding current and arc voltage waveforms and the characteristics of droplet transfer in the hybrid welding process, the effect of laser energy and the action point between laser beam and arc on the frequency of droplet transfer and weld appearance is investigated in details.

电流对铝合金激光填丝焊接接头组织及性能影响研究

采用激光填丝焊接技术对3 mm厚的6061铝合金进行搭接叠焊,通过送丝系统对焊丝加入直流电流,研究加入电流后焊接接头成形质量及影响机制,分析焊接接头显微组织以及力学性能。结果表明,加入电流后,熔池内产生电磁场,在洛伦兹力作用下形成熔体对流,形成电磁搅拌。随着电流的增大,焊缝表面成形光滑,焊缝熔深增加;焊缝组织在电磁搅拌作用下,晶粒细化,析出Mg_(2)Si相;加入电流后熔池稳定性增加,焊缝组织成分均匀化,焊缝区维氏硬度趋于稳定;焊接接头抗拉强度和塑性随着电流的增大均提高。电流为150 A时,焊接接头的抗拉强度为304.68 MPa,伸长率为8.77%。

高能束表面改性技术在航空领域的应用

高能束表面改性适用于各种金属和合金,能够显著提升材料表面硬度、耐磨、耐蚀等性能指标,是航空部件实现性能提升的有效手段之一。本文总结了6种高能束表面改性技术的基本原理、设备构成和改性应用,其中激光相变硬化通过马氏体相变强化金属材料表面;激光熔覆通过选择不同粉末实现表面修复和表面性能提升,重点在于控制裂纹缺陷;激光冲击强化可有效解决航空发动机部件高周疲劳断裂问题;强流脉冲电子束和强流脉冲离子束一方面需要提高设备的性能和运行稳定性,另一方面要针对航空部件应用开展深入研究;而离子束辅助沉积则可以通过制备固体润滑涂层实现对微动磨损的有效防护。最后,提出对高能束表面改性机理深入研究、发展专业化智能化装备和实现多种束源复合与集成的发展方向。

半导体激光器驱动器的SPICE仿真及其在气体传感系统的应用

为了提高激光器的工作可靠性和稳定性,借助TINA-SPICE软件对其驱动电路进行辅助设计,并通过电调制和光电检测系统实验检验设计效果。对驱动器的恒流输出电路的幅频特性和瞬态响应进行仿真,预测潜在的电流振荡现象,并提出一种用于补偿环路增益的易用方案。通过对比补偿前后的仿真曲线,验证了该方案的可行性。在此基础上,以STM32H743作为中央处理核心,通过触摸屏图形化设置和监测驱动电流参数,从而调度激光器驱动电路的运行。在296 K环境温度下,利用该电路进行半导体激光器电调制特性实验,通过拟合波长与电流得到调制系数为0.045 cm-1/mA。进一步地,将该控制器引入基于红外光谱吸收技术的气体传感系统,完成了对甲烷气体的定量分析。分析结果表明,所设计的电路能稳定地驱动激光器并实现对波长的精准调制,获得的气体传感系统的检测下限低于8 ppm。

一种超低失调集成运算放大器的设计与实现

基于双极型工艺设计了一种超低失调集成运算放大器。通过在差分输入级的有源负载处设计电阻修调网络来调整失调电压,并针对基极电流补偿不可控的问题设计了可修调的基极电流补偿结构来降低偏置电流,利用激光修调技术减小基极补偿结构引入的随机失调,有效改善了输入级失调。增益级采用结型场效应晶体管(JFET)差分对管以获得高增益,输出级采用全npn晶体管的乙类输出结构可满足大功率输出需求。芯片实测数据表明:在全温度范围内,失调电压最大为-25.3μV,失调电压温漂为0.025μV/℃,输入偏置电流为-3.535 nA,输入失调电流为-0.825 nA。实现了超低的失调电压、电流和温漂。

可调谐激光器多闭环控制驱动系统设计

为满足可调谐激光器输出激光的高控制稳定性需求,设计并实现了应用于可调谐激光器的多闭环控制驱动系统。首先,为实现高稳定性电流驱动,基于深度负反馈控制原理设计了电流控制内环,并通过积分补偿和RC滤波回路削弱了噪声和电流波动对激光二极管(LD)的干扰;其次,为了防止恒定电流驱动下LD仍存在的功率衰减问题,利用积分电路和光功率二极管(PD)设计了功率控制内环,并应用仪表放大电路消除了环内共模噪声干扰并实现了线性控制;最后,为了实现驱动电流和输出功率的实时调节,应用位置式PID对系统进行外环控制,与内环共同构成了多闭环控制系统。实验结果表明,电流控制稳定度均优于200 ppm,功率控制稳定度优于0.005 dB/h,激光波长稳定度均优于1 pm/h,能够满足可调谐激光器的高控制稳定性需求。

基于不同物理机制的固体高次谐波产生对激光参数依赖特性的理论研究

高次谐波产生(high-order harmonic generation,HHG)机制的研究,主要集中在带间极化和带内电流,以及由Berry曲率引起的反常电流机制上.将强激光诱导完整电流分解为不同机制的贡献,得到长期以来被忽视的混合项电流.通过数值求解半导体Bloch方程(semiconductor Bloch equation,SBE),研究了不同机制产生高次谐波的峰值振幅和激光波长相关性,探索了各电流机制之间的相干性.研究发现,无论是随着波长变化还是随着峰值振幅的变化,混合项电流与带间极化电流诱导的高次谐波谱有着十分相似的变化规律,以及极其接近的谐波强度;同时发现Berry曲率诱导的反常谐波只能产生垂直于激光场偏振方向的偶次谐波,且在波长和峰值强度变化过程中出现的极小值是反常谐波独有的特征.通过分析不同机制之间的干涉作用,发现带间极化谐波与带内谐波(包括反常谐波)在垂直偏振方向上发生了明显的相互干涉,而混合项谐波与带内谐波的相干则微乎其微.

光通信用激光器及光电二极管质子位移损伤效应研究

激光器、探测器等光通信器件对空间辐射环境中高能粒子引入的位移损伤敏感,且随时间累积不可恢复。针对光通信用垂直腔面发射激光器和光电二极管开展了质子辐照试验,并对辐照前后器件的光功率-电流-电压曲线、阈值电流、低频噪声等参数进行了测试分析。研究结果表明:由于质子辐照后,载流子被辐射感生缺陷形成的非辐射复合中心捕获,降低了少数载流子的寿命,复合产生的光子数量减少,因此850 nm垂直腔面发射激光器在质子辐照后光输出功率、外量子效率随注量的增加而降低;InGaAs光电二极管暗电流和噪声密度谱增加。