In the past few years,many groups have focused on the research and development of GaN-based ultraviolet laser diodes(UV LDs).Great progresses have been achieved even though many challenges exist.In this article,we ana...In the past few years,many groups have focused on the research and development of GaN-based ultraviolet laser diodes(UV LDs).Great progresses have been achieved even though many challenges exist.In this article,we analyze the challenges of developing GaN-based ultraviolet laser diodes,and the approaches to improve the performance of ultraviolet laser diode are reviewed.With these techniques,room temperature(RT)pulsed oscillation of AlGaN UVA(ultraviolet A)LD has been realized,with a lasing wavelength of 357.9 nm.Combining with the suppression of thermal effect,the high output power of 3.8 W UV LD with a lasing wavelength of 386.5 nm was also fabricated.展开更多
We present a compact injection-locking diode laser module to generate 671 nm laser light with a high output power up to 150 m W.The module adopts a master-slave injection-locking scheme,and the injection-locking state...We present a compact injection-locking diode laser module to generate 671 nm laser light with a high output power up to 150 m W.The module adopts a master-slave injection-locking scheme,and the injection-locking state is monitored using the transmission spectrum from a Fabry-Perot interferometer.Beat frequency spectrum measurement shows that the injection-locked slave laser has no other frequency components within the 150-MHz detection bandwidth.It is found that without additional electronic feedback,the slave laser can follow the master laser over a wide range of 6 GHz.All the elements of the module are commercially available,which favors fast construction of a complete 671-nm laser system for the preparation of cold^(6)Li atoms with only one research-grade diode laser as the seeding source.展开更多
The inhomogeneous broadening parameter and the internal loss of green LDs are determined by experiments and theoretical fitting. It is found that the inhomogeneous broadening plays an important role on the threshold c...The inhomogeneous broadening parameter and the internal loss of green LDs are determined by experiments and theoretical fitting. It is found that the inhomogeneous broadening plays an important role on the threshold current density of green LDs. The green LD with large inhomogeneous broadening even cannot lase. Therefore, reducing inhomogeneous broadening is a key issue to improve the performance of green LDs.展开更多
The laser provides a controllable means of supplying localized energy for solder joint formation and is a valuable tool in electronics manufacture.Diode laser soldering for fine pitch QFP devices were carried out with...The laser provides a controllable means of supplying localized energy for solder joint formation and is a valuable tool in electronics manufacture.Diode laser soldering for fine pitch QFP devices were carried out with Sn-Ag-Cu lead-free solder and Sn-Pb solder respectively,and the mechanical properties of micro-joints of the QFP devices were tested and studied by STR-1000 micro-joints tester.The results indicate that sound QFP micro-joints without bridging or solder ball are gained by means of diode laser soldering method with appropriate laser processing parameters,and the pitch of the QFP devices is as fine as to 0.4mm.Tensile strength of QFP micro-joints increases gradually with the increase of laser output power,the maximum tensile strength presents when the laser output power increase to a certain value.The results also indicate that the mechanical properties of QFP micro-joints soldered by diode laser soldering system are better than those of QFP micro-joints soldered by IR reflow soldering method.The experimental results may provide a theory guide for investigation of diode laser soldering.展开更多
Au80Sn20 alloy is a widely used solder for laser diode packaging.In this paper,the thermal resistance of Ga N-based blue laser diodes packaged in TO56 cans were measured by the forward voltage method.The microstructur...Au80Sn20 alloy is a widely used solder for laser diode packaging.In this paper,the thermal resistance of Ga N-based blue laser diodes packaged in TO56 cans were measured by the forward voltage method.The microstructures of Au80Sn20 solder were then investigated to understand the reason for the difference in thermal resistance.It was found that the microstructure with a higher content of Au-rich phase in the center of the solder and a lower content of(Au,Ni)Sn phase at the interface of the solder/heat sink resulted in lower thermal resistance.This is attributed to the lower thermal resistance of Au-rich phase and higher thermal resistance of(Au,Ni)Sn phase.展开更多
Soldering experiments with Sn-3.5Ag-0.5Cu lead-free solder on Au/Ni/Cu pad were carried out by means of diode-laser and IR reflow soldering methods respectively.The influence of different heating methods as well as ou...Soldering experiments with Sn-3.5Ag-0.5Cu lead-free solder on Au/Ni/Cu pad were carried out by means of diode-laser and IR reflow soldering methods respectively.The influence of different heating methods as well as output power of diode-laser on shear force of micro-joints was studied and the relationship between the shear force and microstructures of micro-joints was analyzed.The results indicate that the formation of intermetallic compound Ag3Sn is the key factor to affect the shear force and the fine eutectic network structures of micro-joints as well as the dispersion morphology of fine compound Ag3Sn,in which eutectic network band is responsible for the improvement of the shear force of micro-joints soldered with Sn-Ag-Cu lead-free solder.With the increases of output power of diode-laser,the shear force and the microstructures change obviously.The eutectic network structures of micro-joints soldered with diode-laser soldering method are more homogeneous and the grains of Ag3Sn compounds are finer in the range of near optimal output power than those soldered with IR reflow soldering method,so the shear force is also higher than that using IR reflow soldering method.When the output power value of diode-laser is about 41.0 W,the shear force exhibits the highest value that is 70% higher than that using IR reflow soldering method.展开更多
Soldering experiments of quad flat package(QFP) devices were carried out by means of diode laser soldering system with Sn-Ag-Cu and Sn-Cu-Ni lead-free solders, and competitive experiments were also carried out not onl...Soldering experiments of quad flat package(QFP) devices were carried out by means of diode laser soldering system with Sn-Ag-Cu and Sn-Cu-Ni lead-free solders, and competitive experiments were also carried out not only with Sn-Pb eutectic solders but also with infrared reflow soldering method. The results indicate that under the conditions of laser continuous scanning mode as well as the fixed laser soldering time, an optimal power exists, while the optimal mechanical properties of QFP micro-joints are gained. Mechanical properties of QFP micro-joints soldered with laser soldering system are better than those of QFP micro-joints soldered with IR reflow soldering method. Fracture morphologies of QFP micro-joints soldered with laser soldering system exhibit the characteristic of tough fracture, and homogeneous and fine dimples appear under the optimal laser output power.展开更多
Electroluminescence (EL) and temperature-dependent photolumineseenee measurements are performed to study the internal quantum efficiency droop phenomenon of blue laser diodes (LDs) before lasing. Based on the ABC ...Electroluminescence (EL) and temperature-dependent photolumineseenee measurements are performed to study the internal quantum efficiency droop phenomenon of blue laser diodes (LDs) before lasing. Based on the ABC mode, the EL result demonstrates that non-radiative recombination rates of LDs with threshold current densities of 4 and 6kA/cm2 are similar, while LD with threshold current density of 4kA/cm2 exhibits a smaller auger- like recombination rate compared with the one of 6kA/cm2. The internal quantum efficiency droop is more serious for LD with higher threshold current density. temperature-dependent photoluminescence is consistent The internal quantum efficiency value estimated from with EL measurements.展开更多
Tunable diode laser absorption spectroscopy (TDLAS) has been widely employed in atmospheric trace gases detection. The ratio of the second-harmonic signal to the intensity of laser beam incident to the multi-pass ce...Tunable diode laser absorption spectroscopy (TDLAS) has been widely employed in atmospheric trace gases detection. The ratio of the second-harmonic signal to the intensity of laser beam incident to the multi-pass cell is proved to be proportional to the product of the path length and the gas concentration under any condition. A new calibration method based on this relation in TDLAS system for the measurement of trace gas concentration is proposed for the first time. The detection limit and the sensitivity of the system are below 110 and 31ppbv (parts-per-billion in volume), respectively.展开更多
GaN-based continuous-wave operated blue-violet laser diodes(LDs) with long lifetime are demonstrated, which are grown on a c-plane GaN substrate by metal organic chemical vapor deposition with a 10 × 600 μm^2 ri...GaN-based continuous-wave operated blue-violet laser diodes(LDs) with long lifetime are demonstrated, which are grown on a c-plane GaN substrate by metal organic chemical vapor deposition with a 10 × 600 μm^2 ridge waveguide structure.The electrical and optical characteristics of a blue-violet LD are investigated under direct-current injection at room temperature(25 °C). The stimulated emission wavelength and peak optical power of the LD are around 413 nm and over 600 mW, respectively.In addition, the threshold current density and voltage are as small as 1.46 kA/cm^2 and 4.1 V, respectively. Moreover, the lifetime is longer than 1000 hours under room-temperature continuous-wave operation.展开更多
As being an effective real-time method of monitoring vehicle emissions on-road, a remote sensing system based on the tunable diode laser (TDL) technology was presented, and the key technologies were discussed. A fie...As being an effective real-time method of monitoring vehicle emissions on-road, a remote sensing system based on the tunable diode laser (TDL) technology was presented, and the key technologies were discussed. A field test in Guangzhou(Guangdong, China) was performed and was found that the factors, such as slope, instantaneous speed and acceleration, had significant influence on the detectable rate of the system. Based on the results, the proposal choice of testing site was presented.展开更多
This paper presents the cw output characteristics of Nd^(3+):KGd(WO_(4))_(2)(KGW)laser crystal with different NcP+concentration grown in our laboratory.The laser output at 1.067 μm of KGW crystal(3×3×6 mm)w...This paper presents the cw output characteristics of Nd^(3+):KGd(WO_(4))_(2)(KGW)laser crystal with different NcP+concentration grown in our laboratory.The laser output at 1.067 μm of KGW crystal(3×3×6 mm)was obtained to be 68.9 mW and the slope efficiency reached 28.8%when pumped by laser diode of power 305 mW at 807 nm.展开更多
In this work,we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode(LD),and its stimulated emission wavelength is around 442 nm.The GaN-based high power blue LD is grown on a c-...In this work,we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode(LD),and its stimulated emission wavelength is around 442 nm.The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition(MOCVD),and the width and length of the ridge waveguide structure are 30 and 1200μm,respectively.The threshold current is about 400 mA,and corresponding threshold current density is 1.1 kA/cm2.展开更多
Interference filter-stabilized external cavity diode lasers (ECDLs) have properties of simple configurations, high sta- bilities, and narrow linewidths. However, the interference filter used in common ECDL designs r...Interference filter-stabilized external cavity diode lasers (ECDLs) have properties of simple configurations, high sta- bilities, and narrow linewidths. However, the interference filter used in common ECDL designs requires an ultra-narrow bandwidth (about 0.3 nm) to achieve mode selection, that is considerably expensive and not yet available for a wide range of wavelengths. In this paper, a robust ECDL using an available broad bandwidth (about 4 nm) interference filter as the wavelength discriminator is constructed and tested. The ECDL demonstrated a narrow Lorentzian fitted linewidth of 95 kHz and a spectral purity of 2.9 MHz. The long-term frequency stability of the ECDL reaches 5.59 x 10 12.展开更多
We demonstrate an 852-nm external cavity diode laser(ECDL) system whose wavelength is mainly determined by an interference filter instead of other wavelength selective elements. The Lorentzian linewidth measured by ...We demonstrate an 852-nm external cavity diode laser(ECDL) system whose wavelength is mainly determined by an interference filter instead of other wavelength selective elements. The Lorentzian linewidth measured by the heterodyne beating between two identical lasers is 28.3 k Hz. Moreover, we test the application of the ECDL in the Faraday atomic filter.Besides saturated absorption spectrum, the transmission spectrum of the Faraday atomic filter at 852 nm is measured by using the ECDL. This interference filter ECDL method can also be extended to other wavelengths and widen the application range of diode laser.展开更多
We report a robust method of directly stabilizing a grating feedback diode laser to an arbitrary frequency in a large range. The error signal, induced from the difference between the frequency measured by a wavelength...We report a robust method of directly stabilizing a grating feedback diode laser to an arbitrary frequency in a large range. The error signal, induced from the difference between the frequency measured by a wavelength meter and the preset target frequency, is fed back to the piezoelectric transducer module of the diode laser via a sound card in the computer. A visual Labview procedure is developed to realize a feedback system. In our experiment the frequency drift of the diode laser is reduced to 8 MHz within 25 min. The robust scheme can be adapted to realize the arbitrary frequency stabilization for many other kinds of lasers.展开更多
Using the finite-element method, the thermal resistances of GaN laser diode devices in a TO 56 package for both epi-up configuration and epi-down configuration are calculated. The effects of various parameters on the ...Using the finite-element method, the thermal resistances of GaN laser diode devices in a TO 56 package for both epi-up configuration and epi-down configuration are calculated. The effects of various parameters on the thermal characteristics are analysed, and the thicknesses of the AlN submount for both epi-up configuration and epi-down configuration are optimized. The obtained result provides a reference for the parameter selection of the package materials.展开更多
In recent years,because of their small size,high efficiency and environment-friendly advantages,Ⅲ-nitride based ultraviolet(UV)light-emitting diodes(LEDs)have been widely used in many areas to substitute for mercury ...In recent years,because of their small size,high efficiency and environment-friendly advantages,Ⅲ-nitride based ultraviolet(UV)light-emitting diodes(LEDs)have been widely used in many areas to substitute for mercury lamps,such as in 3D printing,curing and sterilization.Ⅲ-nitride alloys cover the whole UV spectrum which is comprised of UV-A(320–400 nm),UV-B(280–320 nm)and UV-C(200–280 nm)by controlling Al/Ga/In content.In addition,Ⅲ-nitride based UV laser diodes(LDs)also have some potential applications in the case of high-power-density,narrow-spectrum,good-directional lighting.However,Ⅲ-nitride based UV laser diodes still have many challenges such as poor crystal quality and low hole concentration in p-type AlGaN.展开更多
基金This work was supported by the National Key R&D Program of China(2022YFB3605104)National Natural Science Foundation of China(62250038,61904172,61974162,62034008,62074142,and 62074140)+1 种基金Strategic Priority Research Program of Chinese Academy of Sciences(XDB43030101)Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering(2022SX-TD016).
文摘In the past few years,many groups have focused on the research and development of GaN-based ultraviolet laser diodes(UV LDs).Great progresses have been achieved even though many challenges exist.In this article,we analyze the challenges of developing GaN-based ultraviolet laser diodes,and the approaches to improve the performance of ultraviolet laser diode are reviewed.With these techniques,room temperature(RT)pulsed oscillation of AlGaN UVA(ultraviolet A)LD has been realized,with a lasing wavelength of 357.9 nm.Combining with the suppression of thermal effect,the high output power of 3.8 W UV LD with a lasing wavelength of 386.5 nm was also fabricated.
基金the National Natural Science Foundation of China(Grant Nos.12035006,12205095,and12147219)the Natural Science Foundation of Zhejiang Province(Grant No.LQ21A040001)。
文摘We present a compact injection-locking diode laser module to generate 671 nm laser light with a high output power up to 150 m W.The module adopts a master-slave injection-locking scheme,and the injection-locking state is monitored using the transmission spectrum from a Fabry-Perot interferometer.Beat frequency spectrum measurement shows that the injection-locked slave laser has no other frequency components within the 150-MHz detection bandwidth.It is found that without additional electronic feedback,the slave laser can follow the master laser over a wide range of 6 GHz.All the elements of the module are commercially available,which favors fast construction of a complete 671-nm laser system for the preparation of cold^(6)Li atoms with only one research-grade diode laser as the seeding source.
基金supported by the National Key Research and Development Program of China(Grant Nos.2017YFB0405000,2016YFB0401803)the National Natural Science Foundation of China(Grant Nos.61834008,61574160,and 61704184)support of the Chinese Academy of Science Visiting Professorship for Senior International Scientists (Grant No.2013T2J0048)
文摘The inhomogeneous broadening parameter and the internal loss of green LDs are determined by experiments and theoretical fitting. It is found that the inhomogeneous broadening plays an important role on the threshold current density of green LDs. The green LD with large inhomogeneous broadening even cannot lase. Therefore, reducing inhomogeneous broadening is a key issue to improve the performance of green LDs.
基金supported by Nanjing University of Aeronautics and Astronautics Doctoral Dissertation Innovation and Excellence Producing Foundation of China (Grant No. BCXJ09-07)Jiangsu Provincial General Colleges and Universities Postgraduate Scientific Research Innovative Plan of China (Grant No. CX09B_074Z)the Six Kind Skilled Personnel Project of Jiangsu Province of China(Grant No. 06-E-020)
文摘The laser provides a controllable means of supplying localized energy for solder joint formation and is a valuable tool in electronics manufacture.Diode laser soldering for fine pitch QFP devices were carried out with Sn-Ag-Cu lead-free solder and Sn-Pb solder respectively,and the mechanical properties of micro-joints of the QFP devices were tested and studied by STR-1000 micro-joints tester.The results indicate that sound QFP micro-joints without bridging or solder ball are gained by means of diode laser soldering method with appropriate laser processing parameters,and the pitch of the QFP devices is as fine as to 0.4mm.Tensile strength of QFP micro-joints increases gradually with the increase of laser output power,the maximum tensile strength presents when the laser output power increase to a certain value.The results also indicate that the mechanical properties of QFP micro-joints soldered by diode laser soldering system are better than those of QFP micro-joints soldered by IR reflow soldering method.The experimental results may provide a theory guide for investigation of diode laser soldering.
基金supported by the National Key Research and Development Program of China(Grant Nos.2016YFB0401803,2017YFE0131500,2017YFB0405000)National Natural Science Foundation of China(Grant Nos.61834008,61574160,61804164,and 61704184)+1 种基金Natural Science Foundation of Jiangsu province(BK20180254)China Postdoctoral Science Foundation(2018M630619)。
文摘Au80Sn20 alloy is a widely used solder for laser diode packaging.In this paper,the thermal resistance of Ga N-based blue laser diodes packaged in TO56 cans were measured by the forward voltage method.The microstructures of Au80Sn20 solder were then investigated to understand the reason for the difference in thermal resistance.It was found that the microstructure with a higher content of Au-rich phase in the center of the solder and a lower content of(Au,Ni)Sn phase at the interface of the solder/heat sink resulted in lower thermal resistance.This is attributed to the lower thermal resistance of Au-rich phase and higher thermal resistance of(Au,Ni)Sn phase.
文摘Soldering experiments with Sn-3.5Ag-0.5Cu lead-free solder on Au/Ni/Cu pad were carried out by means of diode-laser and IR reflow soldering methods respectively.The influence of different heating methods as well as output power of diode-laser on shear force of micro-joints was studied and the relationship between the shear force and microstructures of micro-joints was analyzed.The results indicate that the formation of intermetallic compound Ag3Sn is the key factor to affect the shear force and the fine eutectic network structures of micro-joints as well as the dispersion morphology of fine compound Ag3Sn,in which eutectic network band is responsible for the improvement of the shear force of micro-joints soldered with Sn-Ag-Cu lead-free solder.With the increases of output power of diode-laser,the shear force and the microstructures change obviously.The eutectic network structures of micro-joints soldered with diode-laser soldering method are more homogeneous and the grains of Ag3Sn compounds are finer in the range of near optimal output power than those soldered with IR reflow soldering method,so the shear force is also higher than that using IR reflow soldering method.When the output power value of diode-laser is about 41.0 W,the shear force exhibits the highest value that is 70% higher than that using IR reflow soldering method.
基金Project(CX07B_087z) supported by Jiangsu General Colleges and Universities Postgraduate Scientific Research Innovative Plan, ChinaProject(06-E-020) supported by the Six Kind Skilled Personnel Project of Jiangsu Province, China
文摘Soldering experiments of quad flat package(QFP) devices were carried out by means of diode laser soldering system with Sn-Ag-Cu and Sn-Cu-Ni lead-free solders, and competitive experiments were also carried out not only with Sn-Pb eutectic solders but also with infrared reflow soldering method. The results indicate that under the conditions of laser continuous scanning mode as well as the fixed laser soldering time, an optimal power exists, while the optimal mechanical properties of QFP micro-joints are gained. Mechanical properties of QFP micro-joints soldered with laser soldering system are better than those of QFP micro-joints soldered with IR reflow soldering method. Fracture morphologies of QFP micro-joints soldered with laser soldering system exhibit the characteristic of tough fracture, and homogeneous and fine dimples appear under the optimal laser output power.
基金Supported by the National Key Research and Development Program of China under Grant Nos 2016YFB0401803 and 2016YFB0402002the National Natural Science Foundation of China under Grant Nos 61574160 and 61334005+1 种基金the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No XDA09020401the Visiting Professorship for Senior International Scientists of the Chinese Academy of Sciences under Grant No 2013T2J0048
文摘Electroluminescence (EL) and temperature-dependent photolumineseenee measurements are performed to study the internal quantum efficiency droop phenomenon of blue laser diodes (LDs) before lasing. Based on the ABC mode, the EL result demonstrates that non-radiative recombination rates of LDs with threshold current densities of 4 and 6kA/cm2 are similar, while LD with threshold current density of 4kA/cm2 exhibits a smaller auger- like recombination rate compared with the one of 6kA/cm2. The internal quantum efficiency droop is more serious for LD with higher threshold current density. temperature-dependent photoluminescence is consistent The internal quantum efficiency value estimated from with EL measurements.
基金Project supported by the National Natural Science Foundation of China (Grant No 10274080) and the National High Technology Research and Development Program of China (Grant No 2003AA641010).
文摘Tunable diode laser absorption spectroscopy (TDLAS) has been widely employed in atmospheric trace gases detection. The ratio of the second-harmonic signal to the intensity of laser beam incident to the multi-pass cell is proved to be proportional to the product of the path length and the gas concentration under any condition. A new calibration method based on this relation in TDLAS system for the measurement of trace gas concentration is proposed for the first time. The detection limit and the sensitivity of the system are below 110 and 31ppbv (parts-per-billion in volume), respectively.
基金supported by the National Key R&D Program of China (Nos. 2016YFB0401801, 2016YFB0400803)the Science Challenge Project (No. TZ2016003)+1 种基金the National Natural Science Foundation of China (Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110)the Beijing Municipal Science and Technology Project (No. Z161100002116037)
文摘GaN-based continuous-wave operated blue-violet laser diodes(LDs) with long lifetime are demonstrated, which are grown on a c-plane GaN substrate by metal organic chemical vapor deposition with a 10 × 600 μm^2 ridge waveguide structure.The electrical and optical characteristics of a blue-violet LD are investigated under direct-current injection at room temperature(25 °C). The stimulated emission wavelength and peak optical power of the LD are around 413 nm and over 600 mW, respectively.In addition, the threshold current density and voltage are as small as 1.46 kA/cm^2 and 4.1 V, respectively. Moreover, the lifetime is longer than 1000 hours under room-temperature continuous-wave operation.
文摘As being an effective real-time method of monitoring vehicle emissions on-road, a remote sensing system based on the tunable diode laser (TDL) technology was presented, and the key technologies were discussed. A field test in Guangzhou(Guangdong, China) was performed and was found that the factors, such as slope, instantaneous speed and acceleration, had significant influence on the detectable rate of the system. Based on the results, the proposal choice of testing site was presented.
基金Supported by the National Natural Science Foundation of ChinaFujian Provincial Natural Science Foundation.
文摘This paper presents the cw output characteristics of Nd^(3+):KGd(WO_(4))_(2)(KGW)laser crystal with different NcP+concentration grown in our laboratory.The laser output at 1.067 μm of KGW crystal(3×3×6 mm)was obtained to be 68.9 mW and the slope efficiency reached 28.8%when pumped by laser diode of power 305 mW at 807 nm.
基金This work was supported by the National Key R&D Program of China(Grant Nos.2018YFB0406903,2017YFB0405001,2016YFB0400803 and 2016YFB0401801)the Science Challenge Project(Grant No.TZ2016003)+5 种基金the National Natural Science Foundation of China(Grant Nos.62034008,62074142,62074140,61974162,61904172,and 61874175)the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2019115)Beijing Nova Program(Grant No.202093)Beijing Municipal Science and Technology Project(Grant No.Z161100002116037)Jiangsu Institute of Advanced Semiconductors(IASEMI 2020-CRP-02)Young Elite Scientists Sponsorship Program by CAST.
文摘In this work,we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode(LD),and its stimulated emission wavelength is around 442 nm.The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition(MOCVD),and the width and length of the ridge waveguide structure are 30 and 1200μm,respectively.The threshold current is about 400 mA,and corresponding threshold current density is 1.1 kA/cm2.
基金Project supported by the Foundation of Based Technology of China(Grant No.YXBGD20151JL01)the National Natural Science Foundation of China(Grant Nos.61376049,61604007,11674016,61378058,61575008,and 61574011)+1 种基金the Natural Science Foundation of Beijing City,China(Grant Nos.4172009 and4152003)the Beijing Municipal Commission of Education of China(Grant Nos.PXM2017 014204 500034 and PXM2016 014204 500018)
文摘Interference filter-stabilized external cavity diode lasers (ECDLs) have properties of simple configurations, high sta- bilities, and narrow linewidths. However, the interference filter used in common ECDL designs requires an ultra-narrow bandwidth (about 0.3 nm) to achieve mode selection, that is considerably expensive and not yet available for a wide range of wavelengths. In this paper, a robust ECDL using an available broad bandwidth (about 4 nm) interference filter as the wavelength discriminator is constructed and tested. The ECDL demonstrated a narrow Lorentzian fitted linewidth of 95 kHz and a spectral purity of 2.9 MHz. The long-term frequency stability of the ECDL reaches 5.59 x 10 12.
基金supported by the National Natural Science Foundation of China(Grant No.91436210)the International Science and Technology Cooperation Program of China(Grant No.2010DFR10900)
文摘We demonstrate an 852-nm external cavity diode laser(ECDL) system whose wavelength is mainly determined by an interference filter instead of other wavelength selective elements. The Lorentzian linewidth measured by the heterodyne beating between two identical lasers is 28.3 k Hz. Moreover, we test the application of the ECDL in the Faraday atomic filter.Besides saturated absorption spectrum, the transmission spectrum of the Faraday atomic filter at 852 nm is measured by using the ECDL. This interference filter ECDL method can also be extended to other wavelengths and widen the application range of diode laser.
基金Project supported by the National Basic Research Program of China(Grant No.2012CB921603)the Program for Changjiang Scholars and Innovative Research Team in University of Ministry of Education of China(Grant No.IRT13076)+4 种基金the Major Research Plan of the National Natural Science Foundation of China(Grant No.91436108)the National Natural Science Foundation of China(Grant Nos.61378014,61308023,61378015,and 11434007)the Fund for Fostering Talents in Basic Science of the National Natural Science Foundation of China(Grant No.J1103210)the New Teacher Fund of the Ministry of Education of China(Grant No.20131401120012)the Natural Science Foundation for Young Scientists of Shanxi Province,China(Grant No.2013021005-1)
文摘We report a robust method of directly stabilizing a grating feedback diode laser to an arbitrary frequency in a large range. The error signal, induced from the difference between the frequency measured by a wavelength meter and the preset target frequency, is fed back to the piezoelectric transducer module of the diode laser via a sound card in the computer. A visual Labview procedure is developed to realize a feedback system. In our experiment the frequency drift of the diode laser is reduced to 8 MHz within 25 min. The robust scheme can be adapted to realize the arbitrary frequency stabilization for many other kinds of lasers.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60506001,60976045,60836003,60776047,and 61076119)the National Basic Research Program of China (Grant No. 2007CB936700)the Funds for Outstanding Yong Researchers from the National Natural Science Foundation of China (Grant No. 60925017)
文摘Using the finite-element method, the thermal resistances of GaN laser diode devices in a TO 56 package for both epi-up configuration and epi-down configuration are calculated. The effects of various parameters on the thermal characteristics are analysed, and the thicknesses of the AlN submount for both epi-up configuration and epi-down configuration are optimized. The obtained result provides a reference for the parameter selection of the package materials.
文摘In recent years,because of their small size,high efficiency and environment-friendly advantages,Ⅲ-nitride based ultraviolet(UV)light-emitting diodes(LEDs)have been widely used in many areas to substitute for mercury lamps,such as in 3D printing,curing and sterilization.Ⅲ-nitride alloys cover the whole UV spectrum which is comprised of UV-A(320–400 nm),UV-B(280–320 nm)and UV-C(200–280 nm)by controlling Al/Ga/In content.In addition,Ⅲ-nitride based UV laser diodes(LDs)also have some potential applications in the case of high-power-density,narrow-spectrum,good-directional lighting.However,Ⅲ-nitride based UV laser diodes still have many challenges such as poor crystal quality and low hole concentration in p-type AlGaN.