Quartz crystals are the most widely used material in resonant sensors,owing to their excellent piezoelectric and mechanical properties.With the development of portable and wearable devices,higher processing efficiency...Quartz crystals are the most widely used material in resonant sensors,owing to their excellent piezoelectric and mechanical properties.With the development of portable and wearable devices,higher processing efficiency and geometrical precision are required.Wet etching has been proven to be the most efficient etching method for large-scale production of quartz devices,and many wet etching approaches have been developed over the years.However,until now,there has been no systematic review of quartz crystal etching in liquid phase environments.Therefore,this article provides a comprehensive review of the development of wet etching processes and the achievements of the latest research in thisfield,covering conventional wet etching,additive etching,laser-induced backside wet etching,electrochemical etching,and electrochemical discharge machining.For each technique,a brief overview of its characteristics is provided,associated problems are described,and possible solutions are discussed.This review should provide an essential reference and guidance for the future development of processing strategies for the manufacture of quartz crystal devices.展开更多
The current techniques used for the fabrication of nanosteps are normally done by layer growth and then ion beam thinning. There are also extra films grown on the step surfaces in order to reduce the roughness. So the...The current techniques used for the fabrication of nanosteps are normally done by layer growth and then ion beam thinning. There are also extra films grown on the step surfaces in order to reduce the roughness. So the whole process is time consuming. In this paper, a nanoscale step height structure is fabricated by atomic layer deposition (ALD) and wet etching techniques. According to the traceable of the step height value, the fabrication process is controllable. Because ALD technology can grow a variety of materials, aluminum oxide (Al2O3) is used to fabricate the nanostep. There are three steps of Al2O3 in this structure including 8 nm, 18 nm and 44 inn. The thickness of Al2O3 film and the height of the step are measured by anellipsometer. The experimental results show that the thickness of Al2O3 film is consistent with the height of the step. The height of the step is measured by AFM. The measurement results show that the height is related to the number of cycles of ALD and the wet etching time. The bottom and the sidewall surface roughness are related to the wet etching time. The step height is calibrated by Physikaliseh-Technische Bundesanstalt (PTB) and the results were 7.5±1.5 nm, 15.5±2.0 nm and 41.8±2.1 nm, respectively. This research provides a method for the fabrication of step height at nanoscale and the nanostep fabricated is potential used for standard references.展开更多
Nonpolar (1120) GaN films are grown on the etched a-plane GaN substrates via metalorganic vapor phase epitaxy. High-resolution X-ray diffraction analysis shows great decreases in the full width at half maximum of th...Nonpolar (1120) GaN films are grown on the etched a-plane GaN substrates via metalorganic vapor phase epitaxy. High-resolution X-ray diffraction analysis shows great decreases in the full width at half maximum of the samples grown on etched substrates compared with those of the sample without etching, both on-axis and off-axis, indicating the reduced dislocation densities and improved crystalline quality of these samples. The spatial mapping of the E2 (high) phonon mode demonstrates the smaller line width with a black background in the wing region, which testifies the reduced dislocation densities and enhanced crystalline quality of the epitaxial lateral overgrowth areas. Raman scattering spectra of the E2 (high) peaks exhibit in-plane compressive stress for all the overgrowth samples, and the E2 (high) peaks of samples grown on etched substrates shift toward the lower frequency range, indicating the relaxations of in-plane stress in these GaN films. Furthermore, room temperature photoluminescence measurement demonstrates a significant decrease in the yellow-band emission intensity of a-plane GaN grown on etched templates, which also illustrates the better optical properties of these samples.展开更多
The quality factor(Q factor)is a crucial performance parameter for resonators.In this paper,a novel release method for highquality micro fused silica shell resonators with teeth-like tines with good surface morphology...The quality factor(Q factor)is a crucial performance parameter for resonators.In this paper,a novel release method for highquality micro fused silica shell resonators with teeth-like tines with good surface morphology is proposed.This method is based on femtosecond laser-assisted chemical etching.First,the optimal energy range of femtosecond laser modification is obtained through mechanism analysis.Second,the optimal parameters for a straight line and arc pattern are determined by optimizing the average output power,processing speed,and processing spacing.The results demonstrate why edge breakage in rounded corners is easy under different parameters.Finally,according to these conclusions,the processing is performed on a micro fused silica shell resonator with a Q factor exceeding 6 million.In addition,subsurface damage is rare throughout the fabrication process,and the surface roughness of the released cross section reaches the nanometer level.The improved Q factor helps suppress mechanical thermal noise and reduce zero bias and zero bias drift,constituting the primary method for enhancing the performance of the resonant gyroscope.展开更多
Diamond films have great potential for micro-electro-mechanical system(MEMS) application.For device realization,precise patterning of diamond films at micrometer scale is indispensable.In this paper,simple and facil...Diamond films have great potential for micro-electro-mechanical system(MEMS) application.For device realization,precise patterning of diamond films at micrometer scale is indispensable.In this paper,simple and facile methods will be demonstrated for smart patterning of diamond films,in which two etching techniques,i.e.,plasma dry etching and chemical wet etching(including isotropic-etching and anisotropic-etching) have been developed for obtaining diamond microstructures with different morphology demands.Free-standing diamond micro-gears and micro-combs were achieved as examples by using the experimental procedures.It is confirmed that as-designed diamond structures with a straight side wall and a distinct boundary can be fabricated effectively and efficiently by using such methods.展开更多
Mesa etching technology is considerably important in the Gunn diode fabrication process. In this paper we fabricate InP Gunn diodes with two different kinds of chlorine-based etchants for the mesa etching for comparat...Mesa etching technology is considerably important in the Gunn diode fabrication process. In this paper we fabricate InP Gunn diodes with two different kinds of chlorine-based etchants for the mesa etching for comparative study. We use two chlorine-based etchants, one is HCl-based solution (HC1/H3PO4), and the other is Cl2-based gas mixture by utilizing inductively coupled plasma system (ICP). The results show that the wet etching (HCl-based) offers low cost and approximately vertical sidewall, whilst ICP system (C12-based) offers an excellent and uniform vertical sidewall, and the over-etching is tiny on the top and the bottom of mesa. And the fabricated mesas of Gunn diodes have average etching rates of 0.6 p.m/min and 1.2 pm/min, respectively. The measured data show that the current of Gunn diode by wet etching is lower than that by ICP, and the former has a higher threshold voltage. It provides a low-cost and reliable method which is potentially applied to the fabrication of chip terahertz sources.展开更多
The etching and passivation processes of very long wavelength infrared(VLWIR)detector based on the InAs/GaSb/AlSb type-II superlattice have been studied.By studying the effect of each component in the citric acid solu...The etching and passivation processes of very long wavelength infrared(VLWIR)detector based on the InAs/GaSb/AlSb type-II superlattice have been studied.By studying the effect of each component in the citric acid solution(citric acid,phosphoric acid,hydrogen peroxide,deionized water),the best solution ratio is obtained.After comparing different passivation materials such as sulfide+SiO_(2),Al_(2)O_(3),Si_(3)N_(4) and SU8,it is found that SU8 passivation can reduce the dark current of the device to a greater degree.Combining this wet etching and SU8 passivation,the of VLWIR detector with a mesa diameter of 500μm is about 3.6Ω·cm^(2) at 77 K.展开更多
Based on the self-terminating thermal oxidation-assisted wet etching technique,two kinds of enhancement mode Al_(2)O_(3)/GaN MOSFETs(metal-oxide-semiconductor field-effect transistors)separately with sapphire substrat...Based on the self-terminating thermal oxidation-assisted wet etching technique,two kinds of enhancement mode Al_(2)O_(3)/GaN MOSFETs(metal-oxide-semiconductor field-effect transistors)separately with sapphire substrate and Si sub-strate are prepared.It is found that the performance of sapphire substrate device is better than that of silicon substrate.Comparing these two devices,the maximum drain current of sapphire substrate device(401 mA/mm)is 1.76 times that of silicon substrate device(228 mA/mm),and the field-effect mobility(μ_(FEmax))of sapphire substrate device(176 cm^(2)/V·s)is 1.83 times that of silicon substrate device(96 cm^(2)/V·s).The conductive resistance of silicon substrate device is 21.2Ω-mm,while that of sapphire substrate device is only 15.2Ω·mm,which is 61%that of silicon substrate device.The significant difference in performance between sapphire substrate and Si substrate is related to the differences in interface and border trap near Al_(2)O_(3)/GaN interface.Experimental studies show that(i)interface/border trap density in the sapphire substrate device is one order of magnitude lower than in the Si substrate device,(ii)Both the border traps in Al_(2)O_(3) dielectric near Al_(2)O_(3)/GaN and the interface traps in Al_(2)O_(3)/GaN interface have a significantly effect on device channel mobility,and(iii)the properties of gallium nitride materials on different substrates are different due to wet etching.The research results in this work provide a reference for further optimizing the performances of silicon substrate devices.展开更多
Wet etching characteristics of cubic GaN (c GaN) thin films grown on GaAs(001) by metalorganic vapor phase epitaxy (MOVPE) are investigated.The samples are etched in HCl,H 3PO 4,KOH aqueous solutions,and molten KOH...Wet etching characteristics of cubic GaN (c GaN) thin films grown on GaAs(001) by metalorganic vapor phase epitaxy (MOVPE) are investigated.The samples are etched in HCl,H 3PO 4,KOH aqueous solutions,and molten KOH at temperatures in the range of 90~300℃.It is found that different solution produces different etch figure on the surfaces of a sample.KOH based solutions produce rectangular pits rather than square pits.The etch pits elongate in 1 0] direction,indicating asymmetric etching behavior in the two orthogonal <110> directions.An explanation based on relative reactivity of the various crystallographic planes is employed to interpret qualitatively the asymmetric etching behavior.In addition,it is found that KOH aqueous solution would be more suitable than molten KOH and the two acids for the evaluation of stacking faults in c GaN epilayers. direction,indicating asymmetric etching behavior in the two orthogonal <110> directions.An explanation based on relative reactivity of the various crystallographic planes is employed to interpret qualitatively the asymmetric etching behavior.In addition,it is found that KOH aqueous solution would be more suitable than molten KOH and the two acids for the evaluation of stacking faults in c GaN epilayers.展开更多
With high hardness, high thermal and chemical stability and excellent optical performance, hard materials exhibit great potential applications in various fields, especially in harsh conditions. Femtosecond laser ablat...With high hardness, high thermal and chemical stability and excellent optical performance, hard materials exhibit great potential applications in various fields, especially in harsh conditions. Femtosecond laser ablation has the capability to fabricate three-dimensional micro/nanostructures in hard materials. However, the low efficiency, low precision and high surface roughness are the main stumbling blocks for femtosecond laser processing of hard materials. So far, etching- assisted femtosecond laser modification has demonstrated to be the efficient strategy to solve the above problems when processing hard materials, including wet etching and dry etching. In this review, femtosecond laser modification that would influence the etching selectivity is introduced. The fundamental and recent applications of the two kinds of etching assisted femtosecond laser modification technologies are summarized. In addition, the challenges and application prospects of these technologies are discussed.展开更多
This paper describes a new method to create nanoscale SiO2 pits or channels using single-walled carbon nanotubes (SWNTs) in an HF solution at room temperature within a few seconds. Using aligned SWNT arrays, a patte...This paper describes a new method to create nanoscale SiO2 pits or channels using single-walled carbon nanotubes (SWNTs) in an HF solution at room temperature within a few seconds. Using aligned SWNT arrays, a pattern of nanoscale SiO2 channels can be prepared. The nanoscale SiO2 patterns can also be created on the surface of three- dimensional (3D) SiO2 substrate and even the nanoscale trenches can be constructed with arbitrary shapes. A possible mechanism for this enhanced etching of SiO2 has been qualitatively analysed using defects in SWNTs, combined with H3O+ electric double layers around SWNTs in an HF solution.展开更多
Enrichment of As and Au at the overgrowth rims of arsenian pyrite is a distinctive feature of Carlin-type gold ores.Revealing distribution of such key elements in high resolution is of fundamental importance yet often...Enrichment of As and Au at the overgrowth rims of arsenian pyrite is a distinctive feature of Carlin-type gold ores.Revealing distribution of such key elements in high resolution is of fundamental importance yet often proves challenging.In this study,repeated non-oxidative acid etching of ore samples from Shuiyindong gold deposit was applied to enable elemental depth profiling of goldbearing arsenian pyrite grains.ICP-OES and AAS were used to determine the dissolved Fe,As,and Au concentrations in each of the etching solutions,and XPS was carried out to exam the etched mineral surfaces.In contrast to conventional ion beam etching that may cause substantial sample damage,our acid etching method does not seem to significantly alter the composition and chemical state of the samples.The etched depths directly converted from the measured elemental concentrations can reproducibly reach a very high resolution of~1 nm,and can be conveniently controlled through varying the etching time.While the Fe and As depth profiles consistently reflect the surface oxidation property of arsenian pyrite,the Au profile displaying an obvious upward trend reveals the ore fluid evolution at the late stage of mineralization.Based on our experimental results,we demonstrate that our wet chemistry method is capable of effective depth profiling of gold ore and perhaps other geological samples,with advantages surpassing many instrumental techniques including negligible sample damage,nanoscale resolution as well as isotropic etching.展开更多
基金supported by the Natural Science Foundation of China (Grant No.12234005)the major research and development program of Jiangsu Province (Grant Nos.BE2021007-2 and BK20222007)。
文摘Quartz crystals are the most widely used material in resonant sensors,owing to their excellent piezoelectric and mechanical properties.With the development of portable and wearable devices,higher processing efficiency and geometrical precision are required.Wet etching has been proven to be the most efficient etching method for large-scale production of quartz devices,and many wet etching approaches have been developed over the years.However,until now,there has been no systematic review of quartz crystal etching in liquid phase environments.Therefore,this article provides a comprehensive review of the development of wet etching processes and the achievements of the latest research in thisfield,covering conventional wet etching,additive etching,laser-induced backside wet etching,electrochemical etching,and electrochemical discharge machining.For each technique,a brief overview of its characteristics is provided,associated problems are described,and possible solutions are discussed.This review should provide an essential reference and guidance for the future development of processing strategies for the manufacture of quartz crystal devices.
基金Supported by National Natural Science Foundation of China(Grant No.51175418)Major Research Program on Nanomanufacturing of National Natural Science Foundation of China(Grant No.91323303)+1 种基金Fund of the State Key Laboratory of Precision Measuring Technology and Instruments(Tianjin University and Tsinghua University)of China(Grant No.PIL1403)Collaborative Innovation Center of Suzhou Nano Science and Technology of China
文摘The current techniques used for the fabrication of nanosteps are normally done by layer growth and then ion beam thinning. There are also extra films grown on the step surfaces in order to reduce the roughness. So the whole process is time consuming. In this paper, a nanoscale step height structure is fabricated by atomic layer deposition (ALD) and wet etching techniques. According to the traceable of the step height value, the fabrication process is controllable. Because ALD technology can grow a variety of materials, aluminum oxide (Al2O3) is used to fabricate the nanostep. There are three steps of Al2O3 in this structure including 8 nm, 18 nm and 44 inn. The thickness of Al2O3 film and the height of the step are measured by anellipsometer. The experimental results show that the thickness of Al2O3 film is consistent with the height of the step. The height of the step is measured by AFM. The measurement results show that the height is related to the number of cycles of ALD and the wet etching time. The bottom and the sidewall surface roughness are related to the wet etching time. The step height is calibrated by Physikaliseh-Technische Bundesanstalt (PTB) and the results were 7.5±1.5 nm, 15.5±2.0 nm and 41.8±2.1 nm, respectively. This research provides a method for the fabrication of step height at nanoscale and the nanostep fabricated is potential used for standard references.
基金Project supported by the National Natural Science Foundation of China(Grant No.61204006)the Fundamental Research Funds for the Central Universities,China(Grant No.K50511250002)the National Key Science & Technology Special Project,China(Grant No.2008ZX01002-002)
文摘Nonpolar (1120) GaN films are grown on the etched a-plane GaN substrates via metalorganic vapor phase epitaxy. High-resolution X-ray diffraction analysis shows great decreases in the full width at half maximum of the samples grown on etched substrates compared with those of the sample without etching, both on-axis and off-axis, indicating the reduced dislocation densities and improved crystalline quality of these samples. The spatial mapping of the E2 (high) phonon mode demonstrates the smaller line width with a black background in the wing region, which testifies the reduced dislocation densities and enhanced crystalline quality of the epitaxial lateral overgrowth areas. Raman scattering spectra of the E2 (high) peaks exhibit in-plane compressive stress for all the overgrowth samples, and the E2 (high) peaks of samples grown on etched substrates shift toward the lower frequency range, indicating the relaxations of in-plane stress in these GaN films. Furthermore, room temperature photoluminescence measurement demonstrates a significant decrease in the yellow-band emission intensity of a-plane GaN grown on etched templates, which also illustrates the better optical properties of these samples.
基金supported by the National Natural Science Foundation of China Regional Innovation and Development Joint Fund Key Support Project(Grant No.U21A20505)the National Natural Science Foundation of China(Grant Nos.62204261 and 52205613)。
文摘The quality factor(Q factor)is a crucial performance parameter for resonators.In this paper,a novel release method for highquality micro fused silica shell resonators with teeth-like tines with good surface morphology is proposed.This method is based on femtosecond laser-assisted chemical etching.First,the optimal energy range of femtosecond laser modification is obtained through mechanism analysis.Second,the optimal parameters for a straight line and arc pattern are determined by optimizing the average output power,processing speed,and processing spacing.The results demonstrate why edge breakage in rounded corners is easy under different parameters.Finally,according to these conclusions,the processing is performed on a micro fused silica shell resonator with a Q factor exceeding 6 million.In addition,subsurface damage is rare throughout the fabrication process,and the surface roughness of the released cross section reaches the nanometer level.The improved Q factor helps suppress mechanical thermal noise and reduce zero bias and zero bias drift,constituting the primary method for enhancing the performance of the resonant gyroscope.
基金supported by National Natural Science Foundation of China(No.60908023)the Open Project of State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials of China(No.Ilzxfkl9)
文摘Diamond films have great potential for micro-electro-mechanical system(MEMS) application.For device realization,precise patterning of diamond films at micrometer scale is indispensable.In this paper,simple and facile methods will be demonstrated for smart patterning of diamond films,in which two etching techniques,i.e.,plasma dry etching and chemical wet etching(including isotropic-etching and anisotropic-etching) have been developed for obtaining diamond microstructures with different morphology demands.Free-standing diamond micro-gears and micro-combs were achieved as examples by using the experimental procedures.It is confirmed that as-designed diamond structures with a straight side wall and a distinct boundary can be fabricated effectively and efficiently by using such methods.
基金supported by the Main Direction Program of Knowledge Innovation of the Chinese Academy of Sciences(Grant No.2A2011YYYJ-1123)
文摘Mesa etching technology is considerably important in the Gunn diode fabrication process. In this paper we fabricate InP Gunn diodes with two different kinds of chlorine-based etchants for the mesa etching for comparative study. We use two chlorine-based etchants, one is HCl-based solution (HC1/H3PO4), and the other is Cl2-based gas mixture by utilizing inductively coupled plasma system (ICP). The results show that the wet etching (HCl-based) offers low cost and approximately vertical sidewall, whilst ICP system (C12-based) offers an excellent and uniform vertical sidewall, and the over-etching is tiny on the top and the bottom of mesa. And the fabricated mesas of Gunn diodes have average etching rates of 0.6 p.m/min and 1.2 pm/min, respectively. The measured data show that the current of Gunn diode by wet etching is lower than that by ICP, and the former has a higher threshold voltage. It provides a low-cost and reliable method which is potentially applied to the fabrication of chip terahertz sources.
基金supported by the National Basic Research Program of China(Grant Nos.2018YFA0209102 and 2019YFA070104)the National Natural Science Foundation of China(Grant Nos.61790581 and 61274013)the Key Research Program of the Chinese Academy of Sciences(Grant No.XDPB22)。
文摘The etching and passivation processes of very long wavelength infrared(VLWIR)detector based on the InAs/GaSb/AlSb type-II superlattice have been studied.By studying the effect of each component in the citric acid solution(citric acid,phosphoric acid,hydrogen peroxide,deionized water),the best solution ratio is obtained.After comparing different passivation materials such as sulfide+SiO_(2),Al_(2)O_(3),Si_(3)N_(4) and SU8,it is found that SU8 passivation can reduce the dark current of the device to a greater degree.Combining this wet etching and SU8 passivation,the of VLWIR detector with a mesa diameter of 500μm is about 3.6Ω·cm^(2) at 77 K.
基金Project supported by the Research on Key Techniques in Reliability of Low Power Sensor Chip for IOTIPS and the Technology Project of Headquarters,State Grid Corporation of China(Grant No.5700-202041397A-0-0-00).
文摘Based on the self-terminating thermal oxidation-assisted wet etching technique,two kinds of enhancement mode Al_(2)O_(3)/GaN MOSFETs(metal-oxide-semiconductor field-effect transistors)separately with sapphire substrate and Si sub-strate are prepared.It is found that the performance of sapphire substrate device is better than that of silicon substrate.Comparing these two devices,the maximum drain current of sapphire substrate device(401 mA/mm)is 1.76 times that of silicon substrate device(228 mA/mm),and the field-effect mobility(μ_(FEmax))of sapphire substrate device(176 cm^(2)/V·s)is 1.83 times that of silicon substrate device(96 cm^(2)/V·s).The conductive resistance of silicon substrate device is 21.2Ω-mm,while that of sapphire substrate device is only 15.2Ω·mm,which is 61%that of silicon substrate device.The significant difference in performance between sapphire substrate and Si substrate is related to the differences in interface and border trap near Al_(2)O_(3)/GaN interface.Experimental studies show that(i)interface/border trap density in the sapphire substrate device is one order of magnitude lower than in the Si substrate device,(ii)Both the border traps in Al_(2)O_(3) dielectric near Al_(2)O_(3)/GaN and the interface traps in Al_(2)O_(3)/GaN interface have a significantly effect on device channel mobility,and(iii)the properties of gallium nitride materials on different substrates are different due to wet etching.The research results in this work provide a reference for further optimizing the performances of silicon substrate devices.
文摘Wet etching characteristics of cubic GaN (c GaN) thin films grown on GaAs(001) by metalorganic vapor phase epitaxy (MOVPE) are investigated.The samples are etched in HCl,H 3PO 4,KOH aqueous solutions,and molten KOH at temperatures in the range of 90~300℃.It is found that different solution produces different etch figure on the surfaces of a sample.KOH based solutions produce rectangular pits rather than square pits.The etch pits elongate in 1 0] direction,indicating asymmetric etching behavior in the two orthogonal <110> directions.An explanation based on relative reactivity of the various crystallographic planes is employed to interpret qualitatively the asymmetric etching behavior.In addition,it is found that KOH aqueous solution would be more suitable than molten KOH and the two acids for the evaluation of stacking faults in c GaN epilayers. direction,indicating asymmetric etching behavior in the two orthogonal <110> directions.An explanation based on relative reactivity of the various crystallographic planes is employed to interpret qualitatively the asymmetric etching behavior.In addition,it is found that KOH aqueous solution would be more suitable than molten KOH and the two acids for the evaluation of stacking faults in c GaN epilayers.
基金This work was supported by the National Key Research and Development Program of China and National Natural Science Foundation of China (NSFC) under Grants 2017YFB1104300,61590930,61825502,61805098 and 61960206003.
文摘With high hardness, high thermal and chemical stability and excellent optical performance, hard materials exhibit great potential applications in various fields, especially in harsh conditions. Femtosecond laser ablation has the capability to fabricate three-dimensional micro/nanostructures in hard materials. However, the low efficiency, low precision and high surface roughness are the main stumbling blocks for femtosecond laser processing of hard materials. So far, etching- assisted femtosecond laser modification has demonstrated to be the efficient strategy to solve the above problems when processing hard materials, including wet etching and dry etching. In this review, femtosecond laser modification that would influence the etching selectivity is introduced. The fundamental and recent applications of the two kinds of etching assisted femtosecond laser modification technologies are summarized. In addition, the challenges and application prospects of these technologies are discussed.
基金supported by the National Natural Science Foundation of China (Grant Nos. 90406007, 61076069, 60776053, and 10434010)the National Basic Research Program of China (Grant No. 2007CB936800)
文摘This paper describes a new method to create nanoscale SiO2 pits or channels using single-walled carbon nanotubes (SWNTs) in an HF solution at room temperature within a few seconds. Using aligned SWNT arrays, a pattern of nanoscale SiO2 channels can be prepared. The nanoscale SiO2 patterns can also be created on the surface of three- dimensional (3D) SiO2 substrate and even the nanoscale trenches can be constructed with arbitrary shapes. A possible mechanism for this enhanced etching of SiO2 has been qualitatively analysed using defects in SWNTs, combined with H3O+ electric double layers around SWNTs in an HF solution.
基金Financial supports from the B-type Strategic Priority Program of the Chinese Academy of Sciences(Grant No.XDB41000000)the National Natural Science Foundation of China(41872046,41902041 and 41173074)the Natural Science Research Project of Education Department of Guizhou Province(No.KY[2018]004)are sincerely acknowledged.
文摘Enrichment of As and Au at the overgrowth rims of arsenian pyrite is a distinctive feature of Carlin-type gold ores.Revealing distribution of such key elements in high resolution is of fundamental importance yet often proves challenging.In this study,repeated non-oxidative acid etching of ore samples from Shuiyindong gold deposit was applied to enable elemental depth profiling of goldbearing arsenian pyrite grains.ICP-OES and AAS were used to determine the dissolved Fe,As,and Au concentrations in each of the etching solutions,and XPS was carried out to exam the etched mineral surfaces.In contrast to conventional ion beam etching that may cause substantial sample damage,our acid etching method does not seem to significantly alter the composition and chemical state of the samples.The etched depths directly converted from the measured elemental concentrations can reproducibly reach a very high resolution of~1 nm,and can be conveniently controlled through varying the etching time.While the Fe and As depth profiles consistently reflect the surface oxidation property of arsenian pyrite,the Au profile displaying an obvious upward trend reveals the ore fluid evolution at the late stage of mineralization.Based on our experimental results,we demonstrate that our wet chemistry method is capable of effective depth profiling of gold ore and perhaps other geological samples,with advantages surpassing many instrumental techniques including negligible sample damage,nanoscale resolution as well as isotropic etching.