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Laser-induced voltage effects in Ca_3Co_4O_9 thin films on tilted LaAlO_3(001) substrates grown by chemical solution deposition 被引量:1
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作者 王淑芳 陈明敬 +5 位作者 赵书瑞 陈景春 何立平 于威 王江龙 傅广生 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第10期441-444,共4页
Laser-induced voltage effects in c-axis oriented Ca3Co4O9 thin films have been studied with samples fabricated on 10°tilted LaAIO3 (001) substrates by a simple chemical solution deposition method. An open-circu... Laser-induced voltage effects in c-axis oriented Ca3Co4O9 thin films have been studied with samples fabricated on 10°tilted LaAIO3 (001) substrates by a simple chemical solution deposition method. An open-circuit voltage with a rise time of about 10 ns and full width at half maximum of about 28 ns is detected when the film surface is irradiated by a 308-nm laser pulse with a duration of 25 ns. Besides, opemcircuit voltage signals are also observed when the film surface is irradiated separately by the laser pulses of 532 nm and 1064 nm. The results indicate that Ca3Co4O9 thin films have a great potential application in the wide range photodetctor from the ultraviolet to near infrared regions. 展开更多
关键词 laser-induced voltage Ca3Co4O9 thin films chemical solution deposition
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Fabrication of micro carbon pillar by laser-induced chemical vapor deposition
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作者 周健 罗迎社 +3 位作者 李立君 钟琦文 李新华 殷水平 《Journal of Central South University》 SCIE EI CAS 2008年第S1期197-201,共5页
Argon ion laser was used as the induced light source and ethane(C2H4) was selected as the precursor gas,in the variety ranges of laser power from 0.5 W to 4.5 W and the pressure of the precursor gas from 225×133.... Argon ion laser was used as the induced light source and ethane(C2H4) was selected as the precursor gas,in the variety ranges of laser power from 0.5 W to 4.5 W and the pressure of the precursor gas from 225×133.3 Pa to 680×133.3 Pa,the experiments of laser induced chemical vapor deposition were proceeded for fabrication of micro carbon pillar.In the experiments,the influences of power of laser and pressure of work gas on the diameter and length of micro carbon pillar were investigated,the variety on averaged growth rate of carbon pillar with the laser irradiation time and moving speed of focus was discussed.Based on experiment data,the micro carbon pillar with an aspect ratio of over 500 was built through the method of moving the focus. 展开更多
关键词 laser-induced chemical vapor deposition(LCVD) GROWING rapid DIAMETER microcarbon.
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Discrete formulation of mixed finite element methods for vapor deposition chemical reaction equations
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作者 罗振东 周艳杰 朱江 《Applied Mathematics and Mechanics(English Edition)》 SCIE EI 2007年第5期665-675,共11页
The vapor deposition chemical reaction processes, which are of extremely extensive applications, can be classified as a mathematical model by the following governing nonlinear partial differential equations containing... The vapor deposition chemical reaction processes, which are of extremely extensive applications, can be classified as a mathematical model by the following governing nonlinear partial differential equations containing velocity vector, temperature field, pressure field, and gas mass field. The mixed finite element (MFE) method is employed to study the system of equations for the vapor deposition chemical reaction processes. The semidiscrete and fully discrete MFE formulations are derived. And the existence and convergence (error estimate) of the semidiscrete and fully discrete MFE solutions are demonstrated. By employing MFE method to treat the system of equations for the vapor deposition chemical reaction processes, the numerical solutions of the velocity vector, the temperature field, the pressure field, and the gas mass field can be found out simultaneously. Thus, these researches are not only of important theoretical means, but also of extremely extensive applied vistas. 展开更多
关键词 vapor deposition chemical reaction equation the mixed finite element method semidiscrete formulation fully discrete formulation
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Preparation of Mn_3O_4 from low-grade rhodochrosite ore by chemical bath deposition method
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作者 Jing Zhao Longjun Xu +1 位作者 Taiping Xie Chao Xie 《Chinese Journal Of Geochemistry》 EI CAS CSCD 2015年第1期55-61,共7页
Mn3O4was prepared with the chemical bath deposition(CBD) method. A Mn SO4 solution was obtained by the leaching and purifying of low-grade rhodochrosite ore(LGRO), which was used as raw material. The prepa ration proc... Mn3O4was prepared with the chemical bath deposition(CBD) method. A Mn SO4 solution was obtained by the leaching and purifying of low-grade rhodochrosite ore(LGRO), which was used as raw material. The prepa ration procedures were studied and promoted. The result showed that the Mn3O4 with the highest purity and highes specific surface area could be obtained under the following processes. An Mn SO4 solution of 1.0 mol/L was added into a beaker under a flow rate of 30 m L/h. The p H of the reaction solution was adjusted to 10 using NH3 H2 O a80 °C. Then the solids were washed and dried at 200 °C fo2.5 h. The total Mn content(TMC) of Mn3O4 was 72.0 %The ionic distributions was formulated as [Mn2?[Mn2??0.3024Mn30.2937Mn4?h0.37860.0254]2O4. The average crys tallite size of Mn3O4 with a tetragonal hausmannite struc ture was found to be about 35 nm by X-ray diffraction(XRD) analysis. The BET specific surface area of the Mn3O4 measured was 32 m2/g. 展开更多
关键词 四氧化三锰 化学浴沉积法 低品位矿石 碳酸锰矿石 制备 硫酸锰溶液 比表面积 平均晶粒尺寸
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Numerical modeling of SiC by low-pressure chemical vapor deposition from methyltrichlorosilane 被引量:6
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作者 Kang Guan Yong Gao +5 位作者 Qingfeng Zeng Xingang Luan Yi Zhang Laifei Cheng Jianqing Wu Zhenya Lu 《Chinese Journal of Chemical Engineering》 SCIE EI CAS CSCD 2020年第6期1733-1743,共11页
The development of functional relationships between the observed deposition rate and the experimental conditions is an important step toward understanding and optimizing low-pressure chemical vapor deposition(LPCVD)or... The development of functional relationships between the observed deposition rate and the experimental conditions is an important step toward understanding and optimizing low-pressure chemical vapor deposition(LPCVD)or low-pressure chemical vapor infiltration(LPCVI).In the field of ceramic matrix composites(CMCs),methyltrichlorosilane(CH3 SiCl3,MTS)is the most widely used source gas system for SiC,because stoichiometric SiC deposit can be facilitated at 900°C–1300°C.However,the reliability and accuracy of existing numerical models for these processing conditions are rarely reported.In this study,a comprehensive transport model was coupled with gas-phase and surface kinetics.The resulting gas-phase kinetics was confirmed via the measured concentration of gaseous species.The relationship between deposition rate and 24 gaseous species has been effectively evaluated by combining the special superiority of the novel extreme machine learning method and the conventional sticking coefficient method.Surface kinetics were then proposed and shown to reproduce the experimental results.The proposed simulation strategy can be used for different material systems. 展开更多
关键词 chemical vapor deposition MTS/H2 Gas-phase and surface kinetics Extreme learning machine method Numerical model
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Effects of deposition parameters on HFCVD diamond films growth on inner hole surfaces of WC-Co substrates 被引量:3
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作者 王新昶 林子超 +1 位作者 沈彬 孙方宏 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2015年第3期791-802,共12页
Deposition parameters that have great influences on hot filament chemical vapor deposition (HFCVD) diamond films growth on inner hole surfaces of WC?Co substrates mainly include the substrate temperature (t), carbon c... Deposition parameters that have great influences on hot filament chemical vapor deposition (HFCVD) diamond films growth on inner hole surfaces of WC?Co substrates mainly include the substrate temperature (t), carbon content (φ), total pressure (p) and total mass flow (F). Taguchi method was used for the experimental design in order to study the combined effects of the four parameters on the properties of as-deposited diamond films. A new figure-of-merit (FOM) was defined to assess their comprehensive performance. It is clarified thatt,φandp all have significant and complicated effects on the performance of the diamond film and the FOM, which also present some differences as compared with the previous studies on CVD diamond films growth on plane or external surfaces. Aiming to deposit HFCVD diamond films with the best comprehensive performance, the key deposition parameters were finally optimized as:t=830 °C,φ=4.5%,p=4000 Pa,F=800 mL/min. 展开更多
关键词 hot filament chemical vapor deposition diamond film inner hole surface Taguchi method deposition parameter optimization
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Chemical vapor deposition synthesis and Raman scattering investigation of quasi-one-dimensional ZrS_(3)nanoflakes 被引量:2
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作者 Yang Chen Yuanyuan Jin +7 位作者 Junqiang Yang Yizhang Ren Zhuojun Duan Xiao Liu Jian Sun Song Liu Xukun Zhu Xidong Duan 《Nano Research》 SCIE EI CSCD 2023年第7期10567-10572,共6页
Quasi-one-dimensional ZrS_(3)nanoflakes attract intense interest attributed to their superior electrical and optical anisotropy,stemming from the low symmetry in the crystal structure.However,the conventional chemical... Quasi-one-dimensional ZrS_(3)nanoflakes attract intense interest attributed to their superior electrical and optical anisotropy,stemming from the low symmetry in the crystal structure.However,the conventional chemical vapor transport method for synthesizing bulk ZrS_(3)is limited by morphology and size controllability.It is highly desirable to propose a facile way to precisely synthesize ZrS_(3)nanoflakes.In this work,the chemical vapor deposition method is proposed as a feasible way to synthesize ZrS_(3)nanoflakes.The effects of various substrates and temperatures on ZrS_(3)synthesis have been investigated.For the as-grown ZrS_(3),good crystallinity is confirmed with X-ray diffraction and transmission electron microscopy.The structure and interlayer coupling are investigated with Raman scattering spectroscopy.The strong in-plane anisotropy and interlayer coupling of the ZrS_(3)nanoflakes are illustrated with angle-resolved Raman spectroscopy and temperature-dependent Raman characterization,respectively.This study demonstrates a feasible way for the synthesis of transition metal trisulfides,which may shed new light on the research of other two-dimensional anisotropic transition metal materials. 展开更多
关键词 QUASI-ONE-DIMENSIONAL ZrS_(3)nanoflakes chemical vapor deposition method in-plane anisotropy interlayer coupling
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SiC基GaN上多晶金刚石散热膜生长及其影响
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作者 盛百城 刘庆彬 +3 位作者 何泽召 李鹏雨 蔚翠 冯志红 《半导体技术》 CAS 北大核心 2024年第5期455-460,共6页
通过微波等离子体化学气相沉积(MPCVD)法,在SiC基GaN高电子迁移率晶体管(HEMT)异质结构材料上生长多晶金刚石散热膜,采用光学显微镜(OM)、拉曼光谱、非接触霍尔测试系统、X射线衍射(XRD)和扫描电子显微镜(SEM)对生长样品进行表征,研究... 通过微波等离子体化学气相沉积(MPCVD)法,在SiC基GaN高电子迁移率晶体管(HEMT)异质结构材料上生长多晶金刚石散热膜,采用光学显微镜(OM)、拉曼光谱、非接触霍尔测试系统、X射线衍射(XRD)和扫描电子显微镜(SEM)对生长样品进行表征,研究了生长温度、多晶金刚石散热膜厚度对GaN HEMT异质结构材料性能的影响。测试结果表明,当多晶金刚石生长温度为625℃,散热膜厚度为20μm时,GaN材料载流子迁移率降低9.8%,载流子浓度上升5.3%,(002)衍射峰半高宽增加40%。生长温度越高,金刚石散热膜的生长速率越快。当金刚石散热膜厚度相差不大时,生长温度越高,GaN所受拉应力越大,材料电特性衰退越明显。多晶金刚石高温生长过程中,金刚石引入的应力未对GaN结构产生破坏作用,GaN材料中没有出现孔洞等缺陷。 展开更多
关键词 多晶金刚石 散热膜 氮化镓 微波等离子体化学气相沉积(MPCVD)法 电性能 应力 孔洞缺陷
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浅谈湿法冶炼锌中上清液净化沉钴方法与应用
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作者 石镇泰 冶玉花 +1 位作者 李振华 何晓鹏 《世界有色金属》 2024年第4期12-14,共3页
本文主要介绍了湿法炼锌硫酸锌溶液中钴的沉淀方法、工艺及生产现状,对传统的沉钴方法及工艺存在的优势、缺陷进行了分析,综述了近几年来沉钴技术上的研究进展及取得的进步,有助于提高企业技术水平及经济效益。
关键词 化学方法 锌粉置换沉钴 化学沉淀法 有机物沉钴法 无机物沉钴法
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碳酸钠催化制备纳米碳纤维
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作者 龚勇 潘忠文 +2 位作者 谢纯 崔瑾 王鲜 《化工进展》 EI CAS CSCD 北大核心 2024年第7期3980-3986,共7页
碳纳米材料中残留的金属催化剂会影响其本征性能的发挥,通常需要采用强酸酸洗除去,但酸洗成本较高且破坏碳纳米材料的表面结构,甚至带来环境问题。本文以乙炔为碳源,碳酸钠为催化剂,采用化学气相沉积法裂解制备纳米碳纤维(CNFs),考察制... 碳纳米材料中残留的金属催化剂会影响其本征性能的发挥,通常需要采用强酸酸洗除去,但酸洗成本较高且破坏碳纳米材料的表面结构,甚至带来环境问题。本文以乙炔为碳源,碳酸钠为催化剂,采用化学气相沉积法裂解制备纳米碳纤维(CNFs),考察制备温度对CNFs形貌的影响。通过场发射扫描电子显微镜、透射电子显微镜和能谱仪表征CNFs的微观结构和元素组成,通过X射线衍射、拉曼光谱和傅里叶红外光谱表征CNFs的晶体结构和表面官能团。结果表明,500℃制备的CNFs直径约为50nm,产品直径均匀,通过简单的水洗后能除掉CNFs表面的碳酸钠催化剂,乙炔转化率为31.0%,CNFs产率为1396.7%;CNFs表面的碳原子呈无序排列,石墨化度低,主要由C—H、C==C官能团组成。 展开更多
关键词 纳米碳纤维 化学气相沉积法 乙炔 碳酸钠 催化裂解
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烧结NdFeB磁体表面Zn-Al/T8超疏水复合涂层的显微组织及耐蚀性
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作者 张晓虎 罗军明 +4 位作者 徐吉林 陈金 黄俊 马永存 薛名山 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2024年第5期1606-1617,共12页
为提升烧结NdFeB磁体的耐蚀性,采用旋涂法和等离子体增强化学气相沉积技术在其表面制备Zn-Al/T8(2-全氟辛基乙基丙烯酸酯)超疏水复合涂层。结果表明,Zn-Al涂层主要由片层状的Zn和Al相组成,厚度大约为28μm。Zn-Al/T8复合涂层的接触角达... 为提升烧结NdFeB磁体的耐蚀性,采用旋涂法和等离子体增强化学气相沉积技术在其表面制备Zn-Al/T8(2-全氟辛基乙基丙烯酸酯)超疏水复合涂层。结果表明,Zn-Al涂层主要由片层状的Zn和Al相组成,厚度大约为28μm。Zn-Al/T8复合涂层的接触角达到151.78°,而滚动角仅为5.13°,说明Zn-Al/T8复合涂层可提供一个超疏水表面。Zn-Al涂层和Zn-Al/T8复合涂层对烧结NdFeB的磁性能均无显著影响。Zn-Al涂层通过牺牲阳极来提高NdFeB磁体的耐蚀性,而Zn-Al/T8复合涂层通过超疏水表面进一步提升耐蚀性。Zn-Al/T8复合涂层较Zn-Al涂层具有更好的耐盐雾性能。Zn-Al/T8超疏水复合涂层是一种非常有前途的烧结NdFeB磁体保护涂层。 展开更多
关键词 显微组织 耐蚀性 烧结NDFEB磁体 Zn-Al涂层 超疏水表面 旋涂法 等离子体增强化学气相沉积
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重掺硅片表面APCVD法生长SiO_(2)薄膜的致密性
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作者 史延爽 王浩铭 +2 位作者 田原 张旭 武永超 《半导体技术》 CAS 北大核心 2024年第6期544-548,共5页
在硅片加工过程中,金属杂质的存在会增大pn结器件的漏电流,甚至直接导致pn结禁带宽度变窄,为防止出现硅外延过程中造成的自掺杂现象,通常在硅片表面生长一层高致密性的SiO_(2)薄膜。基于常压化学气相沉积(APCVD)法在6英寸(1英寸≈2.54 c... 在硅片加工过程中,金属杂质的存在会增大pn结器件的漏电流,甚至直接导致pn结禁带宽度变窄,为防止出现硅外延过程中造成的自掺杂现象,通常在硅片表面生长一层高致密性的SiO_(2)薄膜。基于常压化学气相沉积(APCVD)法在6英寸(1英寸≈2.54 cm)n型硅片表面生长SiO_(2)薄膜,首先研究不同沉积温度、SiH_(4)和O_(2)的体积流量比对沉积速率和SiO_(2)薄膜致密性的影响,进一步探究了不同退火温度对SiO_(2)薄膜致密性的影响,以期获得致密性较高的SiO_(2)薄膜。采用HF腐蚀速率法表征其致密性,采用扫描电子显微镜(SEM)观察SiO_(2)薄膜的表面形貌,采用F50膜厚测试仪测试SiO_(2)薄膜的厚度。结果表明,沉积温度为400℃,SiH_(4)和O_(2)的体积流量比为1∶10,退火温度为1100℃时,制备的SiO_(2)薄膜的致密性为0.096 nm/s(采用体积分数为1%的HF腐蚀)。 展开更多
关键词 常压化学气相沉积(APCVD)法 SiO_(2)薄膜 致密性 自掺杂 沉积速率
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化学沉积法制备镍基双涂层及其耐蚀性能的研究
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作者 白雪 白瑞 +1 位作者 白小慧 王金玺 《当代化工》 CAS 2024年第9期2094-2098,共5页
采用化学沉积法在45^(#)钢基体上制备了以Ni-P为底涂层、Ni-W-P为外涂层的Ni-P/Ni-W-P双涂层钢体,分别用扫描电镜、X射线衍射仪和电化学工作站对双涂层的表面形貌和微观结构进行了表征,并对其耐蚀性能进行了研究。结果表明:双涂层具有... 采用化学沉积法在45^(#)钢基体上制备了以Ni-P为底涂层、Ni-W-P为外涂层的Ni-P/Ni-W-P双涂层钢体,分别用扫描电镜、X射线衍射仪和电化学工作站对双涂层的表面形貌和微观结构进行了表征,并对其耐蚀性能进行了研究。结果表明:双涂层具有非晶结构和少量微晶结构,孔隙率仅为1.94%,表面致密性优于Ni-P单涂层。未浸泡的双涂层钢体的腐蚀电流密度为8.58×10^(-7)A·cm^(-2),比45^(#)钢基体低了2个数量级。双涂层钢体的腐蚀速率仅为0.050 g·(cm^(2)·a)^(-1),低于45^(#)钢基体。在质量分数3.5%氯化钠溶液中浸泡10 d后,双涂层钢体的腐蚀程度非常轻,腐蚀电流密度增加非常缓慢,说明双涂层耐腐蚀性优于单涂层,可以为45^(#)钢基体提供更好的保护。 展开更多
关键词 Ni-P/Ni-W-P双涂层 Ni-P单涂层 化学沉积法 耐蚀性
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Engineering of Self-Supported Electrocatalysts on a Three-Dimensional Nickel Foam Platform for Efficient Water Electrolysis
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作者 Ceneng Chen Xian Wang +6 位作者 Zijun Huang Jiahui Mo Xiaoyan Zhang Chao Peng Mohamed Khairy Junjie Ge Zhi Long 《Transactions of Tianjin University》 EI CAS 2024年第2期103-116,共14页
Economical water electrolysis requires highly active non-noble electrocatalysts to overcome the sluggish kinetics of the two half-cell reactions,oxygen evolution reaction,and hydrogen evolution reaction.Although inten... Economical water electrolysis requires highly active non-noble electrocatalysts to overcome the sluggish kinetics of the two half-cell reactions,oxygen evolution reaction,and hydrogen evolution reaction.Although intensive efforts have been committed to achieve a hydrogen economy,the expensive noble metal-based catalysts remain under consideration.Therefore,the engineering of self-supported electrocatalysts prepared using a direct growth strategy on three-dimensional(3D)nickel foam(NF)as a conductive substrate has garnered significant interest.This is due to the large active surface area and 3D porous network offered by these electrocatalysts,which can enhance the synergistic eff ect between the catalyst and the substrate,as well as improve electrocatalytic performance.Hydrothermal-assisted growth,microwave heating,electrodeposition,and other physical methods(i.e.,chemical vapor deposition and plasma treatment)have been applied to NF to fabricate competitive electrocatalysts with low overpotential and high stability.In this review,recent advancements in the development of self-supported electrocatalysts on 3D NF are described.Finally,we provide future perspectives of self-supported electrode platforms in electrochemical water splitting. 展开更多
关键词 Nickel foam Water splitting Surface modification Hydrothermal method Microwave-assisted method ELECTROdeposition chemical vapor deposition Plasma treatment
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MEMS微热板结构设计与仿真
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作者 王玫 王旭丹 姜利英 《传感器与微系统》 CSCD 北大核心 2024年第10期100-104,共5页
微热板作为很多微机电系统(MEMS)传感器和执行器的基础结构,对器件性能影响极大,在气体传感器、燃料电池等领域都有着重要的应用。本文提出了几种悬浮式结构的微热板设计,并利用有限元分析方法(FEA),在气体传感器常用的工作温度400℃下... 微热板作为很多微机电系统(MEMS)传感器和执行器的基础结构,对器件性能影响极大,在气体传感器、燃料电池等领域都有着重要的应用。本文提出了几种悬浮式结构的微热板设计,并利用有限元分析方法(FEA),在气体传感器常用的工作温度400℃下,从热稳定性、机械稳定性、功耗和效率多方面对微热板进行了仿真,结果表明:螺旋形微热板的综合性能更好。进一步对可能影响微热板性能的多个因素,如电极电压、支撑层厚度、微加热器线宽间距比等进行了优化,获得了综合性能最优的微热板图形及参数设计。 展开更多
关键词 微热板 有限元分析方法 MEMS传感器 气体传感器 低压化学气相沉积
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红荧烯纳米材料制备及对正丁胺传感作用
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作者 张海容 覃宁 +3 位作者 陆志方 马卉芳 钟斯然 何君 《山东化工》 CAS 2024年第17期23-26,共4页
以红荧烯(Rubrene,简称RBE)为原料,采用真空气相沉积—分子自组装法制备了RBE有机纳米材料。通过电镜(SEM)、荧光光谱、紫外光谱及傅立叶变换红外光谱对纳米材料RBE进行表征。利用超声-乙醇溶解得到纳米溶液,用荧光测定有机小分子乙酸... 以红荧烯(Rubrene,简称RBE)为原料,采用真空气相沉积—分子自组装法制备了RBE有机纳米材料。通过电镜(SEM)、荧光光谱、紫外光谱及傅立叶变换红外光谱对纳米材料RBE进行表征。利用超声-乙醇溶解得到纳米溶液,用荧光测定有机小分子乙酸、甲苯、甲醇、正丁胺、三乙胺、硝基苯、甲酰胺、苯、乙醇、乙酸乙酯、丙酮、乙醇胺、乙腈、四氢呋喃对RBE纳米材料的猝灭作用,发现正丁胺对该纳米结构具有较强的猝灭作用,以此建立了测定正丁胺蒸汽分子的RBE荧光传感新方法。 展开更多
关键词 真空气相沉积法 红荧烯 纳米材料 化学传感器
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新型MgO负载Co-Y双金属催化剂对单壁碳纳米管直径分布的调控
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作者 霍琴梅 汪镭 《合成化学》 CAS 2024年第5期437-443,共7页
单壁碳纳米管的直径调控是碳管生长和应用领域的重要问题。本文以氧化镁(MgO)为载体,首次采用共浸渍法制备了新型钴-钇(Co-Y)双金属催化剂,利用高熔点的Y作为稀释剂和锚定组分控制Co纳米颗粒的尺寸,从而制备窄直径分布的单壁碳纳米管。... 单壁碳纳米管的直径调控是碳管生长和应用领域的重要问题。本文以氧化镁(MgO)为载体,首次采用共浸渍法制备了新型钴-钇(Co-Y)双金属催化剂,利用高熔点的Y作为稀释剂和锚定组分控制Co纳米颗粒的尺寸,从而制备窄直径分布的单壁碳纳米管。利用SEM、XRD、XPS和TEM等对催化剂的结构形貌进行了表征,确定了Y和Co的存在状态分别为Y_(2)O_(3)和Co_(3)O_(4),其中Y金属的加入能显著提高Co_(3)O_(4)晶粒的分散性。利用TEM和Raman分析产物的直径分布,结果表明Co-Y/MgO催化剂体系制备了窄直径分布的单壁碳纳米,其直径范围为1.06~1.42nm。 展开更多
关键词 Co-Y/MgO 单壁碳纳米管 直径分布 催化化学气相沉积 浸渍法
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Al_(2)O_(3)层厚度对PbZrO_(3)/Al_(2)O_(3)异质结薄膜储能性能的影响
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作者 王占杰 于海义 +2 位作者 邵岩 王子权 白宇 《沈阳工业大学学报》 CAS 北大核心 2024年第1期72-76,共5页
为了提高Pt/PbZrO_(3)/Pt电介质电容器的储能密度,通过热蒸镀和自然氧化方法在Pt/Ti/SiO_(2)/Si基板上沉积了厚度为0~10 nm的Al_(2)O_(3)(AO)层,采用化学溶液沉积法制备PbZrO_(3)薄膜,研究了Al_(2)O_(3)层厚度对PbZrO_(3)/Al_(2)O_(3)(P... 为了提高Pt/PbZrO_(3)/Pt电介质电容器的储能密度,通过热蒸镀和自然氧化方法在Pt/Ti/SiO_(2)/Si基板上沉积了厚度为0~10 nm的Al_(2)O_(3)(AO)层,采用化学溶液沉积法制备PbZrO_(3)薄膜,研究了Al_(2)O_(3)层厚度对PbZrO_(3)/Al_(2)O_(3)(PZO/AO)异质结薄膜储能性能的影响。结果表明:随着AO层厚度的增加,PZO/AO异质结薄膜的击穿电场强度逐渐增大,极化电场电滞回线由反铁电特征转变为铁电特征。当PZO/AO异质结薄膜的AO层厚度为5 nm时,储能密度最大值为21.2 J/cm^(3)。 展开更多
关键词 电介质电容器 PbZrO_(3)薄膜 Al_(2)O_(3)插层 铁电 反铁电 储能性能 热蒸镀 化学溶液沉积法
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培育大单晶金刚石的现状与未来
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作者 方啸虎 陈孝洲 《超硬材料工程》 CAS 2024年第2期45-51,共7页
金刚石以其卓越的硬度和广泛的应用领域而闻名。由于天然金刚石的供应不足和高昂的价格,人工培育的大单晶金刚石成为了一种备受关注的替代品。文章首先阐述了金刚石的独特性质及其在科技领域的重要作用,解析了天然金刚石的稀缺性问题。... 金刚石以其卓越的硬度和广泛的应用领域而闻名。由于天然金刚石的供应不足和高昂的价格,人工培育的大单晶金刚石成为了一种备受关注的替代品。文章首先阐述了金刚石的独特性质及其在科技领域的重要作用,解析了天然金刚石的稀缺性问题。然后详述了培育大单晶金刚石的发展历程,介绍了高温高压法和化学气相沉积法两种主要的合成方法及当前面临的技术难题。文章预测了培育大单晶金刚石的未来发展前景,分析了其在珠宝首饰、半导体、量子技术等领域的广阔应用空间及实现这些应用的技术挑战。最后,给出了加快培育大单晶金刚石技术成熟和产业化进程的几点建议。文章旨在全面系统地综述培育大单晶金刚石研究的现状与发展趋势,为该领域的科研工作者和产业界提供参考。 展开更多
关键词 培育大单晶金刚石 高温高压法 化学气相沉积法 功能材料 应用前景
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纳米金刚石膜/{100}晶面多晶金刚石膜台阶法快速生长研究
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作者 唐春玖 侯海虹 +1 位作者 陈维霞 江学范 《应用技术学报》 2024年第2期133-139,共7页
通过高功率微波等离子体化学气相沉积(MPCVD)以及台阶式基底排列方法,可以在一次沉积过程中同时沉积纳米晶粒及<100>取向的{100}面多晶金刚石薄膜。详细比较在同一次沉积中同时制备的多种不同类别的金刚石产物的生长速率。采用台... 通过高功率微波等离子体化学气相沉积(MPCVD)以及台阶式基底排列方法,可以在一次沉积过程中同时沉积纳米晶粒及<100>取向的{100}面多晶金刚石薄膜。详细比较在同一次沉积中同时制备的多种不同类别的金刚石产物的生长速率。采用台阶法并添加少量空气,微波功率从2.0k W增加至3.2 kW,在下面大硅片上生长的纳米金刚石膜的平均生长速率可从0.3μm/h增大到3.0μm/h;而在上面小硅片上生长的纳米金刚石膜的平均生长速率从3.8μm/h也增加到11.2μm/h,同时产物也转变为{100}晶面的多晶膜。另外,在上面小硅片上生长的金刚石膜的边角效应明显,在边界生长的金刚石产物的生长速率更高,从17.0μm/h增大到27.1μm/h。该结果表明少量氮气和氧气同时添加对金刚石生长的形貌多样性调节作用和对生长速率的提升作用强烈依赖于生长条件。 展开更多
关键词 纳米金刚石膜 {100}晶面 台阶法 微波等离子体化学气相沉积(MPCVD)
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