Total ionizing dose induced single transistor latchup effects for 130 nm partially depleted silicon-on-insulator （PDSOI） NMOSFETs with the bodies floating were studied in this work. The latchup phenomenon strongly c...Total ionizing dose induced single transistor latchup effects for 130 nm partially depleted silicon-on-insulator （PDSOI） NMOSFETs with the bodies floating were studied in this work. The latchup phenomenon strongly correlates with the bias configuration during irradiation. It is found that the high body doping concentration can make the devices less sensitive to the single transistor latchup effect, and the onset drain voltage at which latchup occurs can degrade as the total dose level rises. The mechanism of band-to-band tunneling （BBT） has been discussed. Two-dimensional simulations were conducted to evaluate the BBT effect. It is demonstrated that BBT combined with the positive trapped charge in the buried oxide （BOX） contributes a lot to the latchup effect.展开更多
Since the displacement damage induced by the neutron irradiation prior has negligible impact on the performance of the bulk CMOS SRAM, we use the neutron irradiation to degrade the minority carrier lifetime in the reg...Since the displacement damage induced by the neutron irradiation prior has negligible impact on the performance of the bulk CMOS SRAM, we use the neutron irradiation to degrade the minority carrier lifetime in the regions responsible for latchup. With the experimental results, we discuss the impact of the neutron-induced displacement damage on the SEL sensitivity and qualitative analyze the effectiveness of this suppression approach with TCAD simulation.展开更多
This paper introduces major characteristics of the single event latchup（SEL） in CMOS devices.We accomplish SEL tests for CPU and SRAM devices through the simulation by a pulse laser.The laser simulation results give...This paper introduces major characteristics of the single event latchup（SEL） in CMOS devices.We accomplish SEL tests for CPU and SRAM devices through the simulation by a pulse laser.The laser simulation results give the energy threshold for samples to undergo SEL.SEL current pulses are measured for CMOS devices in the latchup state,the sensitive areas in the devices are acquired,the major traits,causing large scale circuits to undergo SEL,are summarized,and the test equivalence between a pulse laser and ions is also analyzed.展开更多
基金Project supported by Shanghai Municipal Natural Science Foundation,China(Grant No.15ZR1447100)
文摘Total ionizing dose induced single transistor latchup effects for 130 nm partially depleted silicon-on-insulator （PDSOI） NMOSFETs with the bodies floating were studied in this work. The latchup phenomenon strongly correlates with the bias configuration during irradiation. It is found that the high body doping concentration can make the devices less sensitive to the single transistor latchup effect, and the onset drain voltage at which latchup occurs can degrade as the total dose level rises. The mechanism of band-to-band tunneling （BBT） has been discussed. Two-dimensional simulations were conducted to evaluate the BBT effect. It is demonstrated that BBT combined with the positive trapped charge in the buried oxide （BOX） contributes a lot to the latchup effect.
文摘Since the displacement damage induced by the neutron irradiation prior has negligible impact on the performance of the bulk CMOS SRAM, we use the neutron irradiation to degrade the minority carrier lifetime in the regions responsible for latchup. With the experimental results, we discuss the impact of the neutron-induced displacement damage on the SEL sensitivity and qualitative analyze the effectiveness of this suppression approach with TCAD simulation.
文摘This paper introduces major characteristics of the single event latchup（SEL） in CMOS devices.We accomplish SEL tests for CPU and SRAM devices through the simulation by a pulse laser.The laser simulation results give the energy threshold for samples to undergo SEL.SEL current pulses are measured for CMOS devices in the latchup state,the sensitive areas in the devices are acquired,the major traits,causing large scale circuits to undergo SEL,are summarized,and the test equivalence between a pulse laser and ions is also analyzed.
