Elastohydrodynamic Lubrication Interface Stiffness and Damping Considering Asperity Lateral Contact

Elastohydrodynamic lubrication(EHL)point contact occurs between two rough surfaces at the mesoscopic level,while the interaction of rough surfaces involves contact between asperities at the microscale level.In most cases,the contact between asperities within an interface takes the form of lateral contact rather than peak contact.Regions devoid of contact asperities are filled with lubricating oil.However,conventional models often oversimplify lateral contact forms as interactions between asperities and a smooth,rigid plane.These simplifications fail to accurately represent the true contact conditions and can lead to inaccuracies in the analysis of EHL’s contact performance.To address this issue,we have developed a novel EHL interface model comprising two rough surfaces.This model allows us to explore the influence of asperity height,contact angle,and contact azimuth angle on EHL interface performance.

RF MEMS switches based on thermal actuator

A new switching circuit is presented for the application in the frequency range of 0 to 8 GHz. This switch is electro-thermally actuated and exhibits high radio frequency （RF） performance due to its lateral contact mechanism, It composes of electroplated nickel and silicon nitride as structural materials. The isolation between bias and signal ports is realized by using silicon nitride. In the case of a small deformation, the relation between the displacement of the vertex and the pre-bending angle is analyzed. The metal contact is realized by in-plane motion and sidewall connection. The switches were fabricated using the MetalMUMPs process from MEMSCAP. The RF testing results show that the switch has a low insertion loss of 0. 9 dB at 8 GHz and a high isolation of 30 dB below 8 GHz.

In-plane epitaxial growth of 2D CoSe-WSe2 metalsemiconductor lateral heterostructures with improved WSe2 transistors performance

The two-dimensional(2D)in-plane(lateral)heterostructures have attracted increasing interest for potential applications in the atomically thin electronics and optoelectronics.While most studies focus on semiconductorsemiconductor lateral heterostructures with highly similar lattice structures between the constituent components,the synthesis of metal-semiconductor lateral heterostructures is much less explored and usually more challenging due to more distinct lattice structures or chemical properties.Herein,a vapor phase epitaxy growth method of high-quality metal-semiconductor lateral heterostructures between tetragonal CoSe and hexagonal WSe2 is reported.The 2D CoSe can selectively nucleate at the edge of pre-grown WSe2 nanosheets to form CoSe-WSe2 metal-semiconductor lateral heterostructures.Optical microscopy(OM),scanning electron microscopy(SEM),and atomic force microscopy(AFM)studies reveal distinct contrast across the heterostructure interface.High-resolution transmission electron microscopy(HRTEM)and selected area electron diffraction(SAED)studies further confirm the microstructure modulation across the heterostructure interface.The field-effect transistors(FETs)of CoSe-WSe2 lateral heterostructures show satisfactory Ohmic contacts and considerably better FET performance over those with deposited Cr/Au contacts,suggesting the in-plane metal-semiconductor junctions may function as improved contacts for the atomically thin electronics.