Due to the need to reduce electronic device sizes, it is very important to consider the depth and lateral distribution of ions implanted into a crystalline target. This paper reports that Nd ions with energies of 200 ...Due to the need to reduce electronic device sizes, it is very important to consider the depth and lateral distribution of ions implanted into a crystalline target. This paper reports that Nd ions with energies of 200 keV to 500 keV and dose of 5× 10^15 ions/cm2 are implanted into Si single crystals at room temperature under the angles of 0°, 30°, and 45°, respectively. The lateral spreads of 200 keV-500 keV Nd ions implanted in Si sample are measured by Rutherford backscattering technique. The results show that the measured values are in good agreement with those obtained from the prediction of SRIM2010 codes.展开更多
We report a type-I Ga Sb-based laterally coupled distributed-feedback（LC-DFB） laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings...We report a type-I Ga Sb-based laterally coupled distributed-feedback（LC-DFB） laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB laser with a cavity of 1500 μm achieves single longitudinal mode continuous-wave operation at 20℃ with side mode suppression ratio（SMSR） as high as 24 dB.The maximum single mode continuous-wave output power is about 10 mW at room temperature（uncoated facet）. A low threshold current density of 230 A/cm^2 is achieved with differential quantum efficiency estimated to be 93 mW/A. The laser shows a good wavelength stability against drive current and working temperature.展开更多
We report the InAs/GaAs quantum dot laterally coupled distributed feedback(LC-DFB)lasers operating at room temperature in the wavelength range of 1.31μm.First-order chromium Bragg gratings were fabricated alongside t...We report the InAs/GaAs quantum dot laterally coupled distributed feedback(LC-DFB)lasers operating at room temperature in the wavelength range of 1.31μm.First-order chromium Bragg gratings were fabricated alongside the ridge waveguide to obtain the maximum coupling coefficient with the optical field.Stable continuous-wave single-frequency operation has been achieved with output power above 5 mW/facet and side mode suppression ratio exceeding 52 dB.Moreover,a single chip integrating three LC-DFB lasers was tentatively explored.The three LC-DFB lasers on the chip can operate in single mode at room temperature,covering the wavelength span of 35.6 nm.展开更多
基金Project supported by the Shandong Jianzhu University Foundation,China(Grant No. XN070109)the National Natural Science Foundation of China (Grant No.51042002)
文摘Due to the need to reduce electronic device sizes, it is very important to consider the depth and lateral distribution of ions implanted into a crystalline target. This paper reports that Nd ions with energies of 200 keV to 500 keV and dose of 5× 10^15 ions/cm2 are implanted into Si single crystals at room temperature under the angles of 0°, 30°, and 45°, respectively. The lateral spreads of 200 keV-500 keV Nd ions implanted in Si sample are measured by Rutherford backscattering technique. The results show that the measured values are in good agreement with those obtained from the prediction of SRIM2010 codes.
基金Project supported by the National Key Basic Research Program of China(Grant Nos.2014CB643903 and 2013CB932904)the National Special Funds for the Development of Major Research Equipment and Instruments,China(Grant No.2012YQ140005)+1 种基金the National Natural Science Foundation of China(Grant Nos.61435012,61274013,61306088,and 61290303)the Strategic Priority Research Program(B)of the Chinese Academy of Sciences(Grant No.XDB01010200)
文摘We report a type-I Ga Sb-based laterally coupled distributed-feedback（LC-DFB） laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB laser with a cavity of 1500 μm achieves single longitudinal mode continuous-wave operation at 20℃ with side mode suppression ratio（SMSR） as high as 24 dB.The maximum single mode continuous-wave output power is about 10 mW at room temperature（uncoated facet）. A low threshold current density of 230 A/cm^2 is achieved with differential quantum efficiency estimated to be 93 mW/A. The laser shows a good wavelength stability against drive current and working temperature.
基金supported by the National Key Research and Development Program of China(No.2021YFB2800500).
文摘We report the InAs/GaAs quantum dot laterally coupled distributed feedback(LC-DFB)lasers operating at room temperature in the wavelength range of 1.31μm.First-order chromium Bragg gratings were fabricated alongside the ridge waveguide to obtain the maximum coupling coefficient with the optical field.Stable continuous-wave single-frequency operation has been achieved with output power above 5 mW/facet and side mode suppression ratio exceeding 52 dB.Moreover,a single chip integrating three LC-DFB lasers was tentatively explored.The three LC-DFB lasers on the chip can operate in single mode at room temperature,covering the wavelength span of 35.6 nm.
