A novel lateral insulated gate bipolar transistor on a silicon-on-insulator substrate SOI-LIGBT with a special low-doped P-well structure is proposed.The P-well structure is added to attach the P-body under the channe...A novel lateral insulated gate bipolar transistor on a silicon-on-insulator substrate SOI-LIGBT with a special low-doped P-well structure is proposed.The P-well structure is added to attach the P-body under the channel so as to reduce the linear anode current degradation without additional process.The influence of the length and depth of the P-well on the hot-carrier HC reliability of the SOI-LIGBT is studied.With the increase in the length of the P-well the perpendicular electric field peak and the impact ionization peak diminish resulting in the reduction of the hot-carrier degradation. In addition the impact ionization will be weakened with the increase in the depth of the P-well which also makes the hot-carrier degradation decrease.Considering the effect of the low-doped P-well and the process windows the length and depth of the P-well are both chosen as 2 μm.展开更多
A novel ultralow turnoff loss dual-gate silicon-on-insulator （SOI） lateral insulated gate bipolar transistor （LIGBT） is proposed. The proposed SOI LIGBT features an extra trench gate inserted between the p-well an...A novel ultralow turnoff loss dual-gate silicon-on-insulator （SOI） lateral insulated gate bipolar transistor （LIGBT） is proposed. The proposed SOI LIGBT features an extra trench gate inserted between the p-well and n-drift, and an n-type carrier stored （CS） layer beneath the p-well. In the on-state, the extra trench gate acts as a barrier, which increases the cartier density at the cathode side of n-drift region, resulting in a decrease of the on-state voltage drop （Von）. In the off-state, due to the uniform carder distribution and the assisted depletion effect induced by the extra trench gate, large number of carriers can be removed at the initial turnoff process, contributing to a low turnoff loss （Eoff）. Moreover, owing to the dual-gate field plates and CS layer, the carrier density beneath the p-well can greatly increase, which further improves the tradeoff between Eoff and Von. Simulation results show that Eoff of the proposed SOI LIGBT can decrease by 77% compared with the conventional trench gate SOI LIGBT at the same Von of 1.1 V.展开更多
A reverse-conducting lateral insulated-gate bipolar transistor （NI.2-LltJlS｜） with a trench oxide layer （IUL）, teaturlng a vertical N-buffer and P-collector is proposed. Firstly, the TOL enhances both of the surf...A reverse-conducting lateral insulated-gate bipolar transistor （NI.2-LltJlS｜） with a trench oxide layer （IUL）, teaturlng a vertical N-buffer and P-collector is proposed. Firstly, the TOL enhances both of the surface and bulk electric fields of the N-drift region, thus the breakdown voltage （BV） is improved. Secondly, the vertical N-buffer layer increases the voltage drop VpN of the P-collector/N-buffer junction, thus the snapback is suppressed. Thirdly, the P-body and the vertical N-buffer act as the anode and the cathode, respectively, to conduct the reverse current, thus the inner diode is integrated. As shown by the simulation results, the proposed RC-LIGBT exhibits trapezoidal electric field distribution with BV of 342.4 V, which is increased by nearly 340% compared to the conventional RC-LIGBT with triangular electric fields of 100.2 V. Moreover, the snapback is eliminated by the vertical N-buffer layer design, thus the reliability of the device is improved.展开更多
基金The National Natural Science Foundation of China(No.61204083)the Natural Science Foundation of Jiangsu Province(No.BK2011059)the Program for New Century Excellent Talents in University(No.NCET-10-0331)
文摘A novel lateral insulated gate bipolar transistor on a silicon-on-insulator substrate SOI-LIGBT with a special low-doped P-well structure is proposed.The P-well structure is added to attach the P-body under the channel so as to reduce the linear anode current degradation without additional process.The influence of the length and depth of the P-well on the hot-carrier HC reliability of the SOI-LIGBT is studied.With the increase in the length of the P-well the perpendicular electric field peak and the impact ionization peak diminish resulting in the reduction of the hot-carrier degradation. In addition the impact ionization will be weakened with the increase in the depth of the P-well which also makes the hot-carrier degradation decrease.Considering the effect of the low-doped P-well and the process windows the length and depth of the P-well are both chosen as 2 μm.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61376080 and 61674027)the Natural Science Foundation of Guangdong Province,China(Grant Nos.2014A030313736 and 2016A030311022)
文摘A novel ultralow turnoff loss dual-gate silicon-on-insulator （SOI） lateral insulated gate bipolar transistor （LIGBT） is proposed. The proposed SOI LIGBT features an extra trench gate inserted between the p-well and n-drift, and an n-type carrier stored （CS） layer beneath the p-well. In the on-state, the extra trench gate acts as a barrier, which increases the cartier density at the cathode side of n-drift region, resulting in a decrease of the on-state voltage drop （Von）. In the off-state, due to the uniform carder distribution and the assisted depletion effect induced by the extra trench gate, large number of carriers can be removed at the initial turnoff process, contributing to a low turnoff loss （Eoff）. Moreover, owing to the dual-gate field plates and CS layer, the carrier density beneath the p-well can greatly increase, which further improves the tradeoff between Eoff and Von. Simulation results show that Eoff of the proposed SOI LIGBT can decrease by 77% compared with the conventional trench gate SOI LIGBT at the same Von of 1.1 V.
基金Project supported by the National Natural Science Foundation of China(Grant No.61604027)the Basic and Advanced Technology Research Project of Chongqing Municipality,China(Grant No.cstc2016jcyj A1923)+3 种基金the Scientific and Technological Research Foundation of Chongqing Municipal Education Commission,China(Grant No.KJ1500404)the Youth Natural Science Foundation of Chongqing University of Posts and Telecommunications,China(Grant Nos.A2015-50 and A2015-52)the Chongqing Key Laboratory Improvement Plan,China(Chongqing Key Laboratory of Photo Electronic Information Sensing and Transmitting Technology)(Grant No.cstc2014pt-sy40001)the University Innovation Team Construction Plan Funding Project of Chongqing,China(Architecture and Core Technologies of Smart Medical System)(Grant No.CXTDG201602009)
文摘A reverse-conducting lateral insulated-gate bipolar transistor （NI.2-LltJlS｜） with a trench oxide layer （IUL）, teaturlng a vertical N-buffer and P-collector is proposed. Firstly, the TOL enhances both of the surface and bulk electric fields of the N-drift region, thus the breakdown voltage （BV） is improved. Secondly, the vertical N-buffer layer increases the voltage drop VpN of the P-collector/N-buffer junction, thus the snapback is suppressed. Thirdly, the P-body and the vertical N-buffer act as the anode and the cathode, respectively, to conduct the reverse current, thus the inner diode is integrated. As shown by the simulation results, the proposed RC-LIGBT exhibits trapezoidal electric field distribution with BV of 342.4 V, which is increased by nearly 340% compared to the conventional RC-LIGBT with triangular electric fields of 100.2 V. Moreover, the snapback is eliminated by the vertical N-buffer layer design, thus the reliability of the device is improved.
