Fracture of the lateral process of the talus(FLPT)is uncommon in clinical practice and can be easily missed or misdiagnosed.In recent years,as researchers from all over the world have further deepened their research o...Fracture of the lateral process of the talus(FLPT)is uncommon in clinical practice and can be easily missed or misdiagnosed.In recent years,as researchers from all over the world have further deepened their research on FLPT,there has been a breakthrough in the classification,and the methods and principles of clinical management have changed accordingly;however,there is still no standardized guideline for the diagnosis and management of FLPT,and there have been few relevant literature review articles related to this kind of fracture in the past at least 5 years.In this article,we review the clinical classification,classification-based therapeutic recommendations,and prognosis of FLPT,with the aim of providing a reference for the clinical diagnosis and management of this infrequent fracture.展开更多
The deep lateral growth process of the plateau is a hot topic in earth science.As the growth boundary zone of the northeastern Tibetan Plateau,southern Ningxia geomorphic zone is controlled by four major arcuate fault...The deep lateral growth process of the plateau is a hot topic in earth science.As the growth boundary zone of the northeastern Tibetan Plateau,southern Ningxia geomorphic zone is controlled by four major arcuate fault zones(Fig.1),namely Haiyuan fault(HYF),XiangshanTianjingshan fault(XTSF),Yantongshan fault(YTSF).展开更多
An improved single-π equivalent circuit model for on-chip inductors in the GaAs process is presented in this paper. Considering high order parasites, the model is established by comprising an improved skin effect bra...An improved single-π equivalent circuit model for on-chip inductors in the GaAs process is presented in this paper. Considering high order parasites, the model is established by comprising an improved skin effect branch and a substrate lateral coupling branch. The parameter extraction is based on an improved characteristic function approach and vector fitting method. The model has better simulation than the previous work over the measured data of 2.5r and 4.5r on-chip inductors in the GaAs process.展开更多
基金Supported by The China Scholarship Council,No.202308420035.
文摘Fracture of the lateral process of the talus(FLPT)is uncommon in clinical practice and can be easily missed or misdiagnosed.In recent years,as researchers from all over the world have further deepened their research on FLPT,there has been a breakthrough in the classification,and the methods and principles of clinical management have changed accordingly;however,there is still no standardized guideline for the diagnosis and management of FLPT,and there have been few relevant literature review articles related to this kind of fracture in the past at least 5 years.In this article,we review the clinical classification,classification-based therapeutic recommendations,and prognosis of FLPT,with the aim of providing a reference for the clinical diagnosis and management of this infrequent fracture.
基金supported by the Geological Survey Project of China Geological Survey(Grant No.DD20190018)
文摘The deep lateral growth process of the plateau is a hot topic in earth science.As the growth boundary zone of the northeastern Tibetan Plateau,southern Ningxia geomorphic zone is controlled by four major arcuate fault zones(Fig.1),namely Haiyuan fault(HYF),XiangshanTianjingshan fault(XTSF),Yantongshan fault(YTSF).
基金Project supported by the National Natural Science Foundation of China(No.61674036)
文摘An improved single-π equivalent circuit model for on-chip inductors in the GaAs process is presented in this paper. Considering high order parasites, the model is established by comprising an improved skin effect branch and a substrate lateral coupling branch. The parameter extraction is based on an improved characteristic function approach and vector fitting method. The model has better simulation than the previous work over the measured data of 2.5r and 4.5r on-chip inductors in the GaAs process.
