Ligand modulation of active center to promote lead-free Cs_(2)AgInCl_(6)photocatalytic CO_(2)reduction

Metal halide perovskites(MHP)are potential candidates for the photocatalytic reduction of CO_(2)due to their long photogenerated carrier lifetime and charge diffusion length.However,the conventional long-chain ligand impedes the adsorption and activation of CO_(2)molecules in practical applications.Here,a ligand modulation technology is employed to enhance the photocatalytic CO_(2)reduction activity of lead-free Cs_(2)AgInCl_(6)microcrystals(MCs).The Cs_(2)AgInCl_(6)MCs passivated by Oleic acid(OLA)and Octanoic acid(OCA)are used for photocatalytic CO_(2)reduction.The results show that the surface defects and electronic properties of Cs_(2)AgInCl_(6)MCs can be adjusted through ligand modulation.Compared with the OLA-Cs_(2)AgInCl_(6),the OCA-Cs_(2)AgInCl_(6)catalyst demonstrated a significant improvement in the catalytic yield of CO and CH_(4).The CO and CH_(4)catalytic yields of OCA-Cs_(2)AgInCl_(6)reached 171.88 and34.15μmol g^(-1)h^(-1)which were 2.03 and 12.98 times higher than those of OLA-Cs_(2)AgInCl_(6),and the total electron consumption rate of OCA-Cs_(2)AgInCl_(6)was 615.2μmol g^(-1)h^(-1)which was 3.25 times higher than that of OLA-Cs_(2)AgInCl_(6).Furthermore,in situ diffuse reflectance infrared Fourier transform spectra revealed the enhancement of photocatalytic activity in Cs_(2)AgInCl_(6)MCs induced by ligand modulation.This study illustrates the potential of lead-free Cs_(2)AgInCl_(6)MCs for efficient photocatalytic CO_(2)reduction and provides a ligand modulation strategy for the active promotion of MHP photocatalysts.

基于Anand模型的BGA封装热冲击循环分析及焊点疲劳寿命预测

BGA封装在电子元器件中的互连、信息传输等方面起着重要作用,研究封装元件的可靠性以及内部焊点在高温、高湿、高压等极限条件下的稳定性显得尤为重要。基于Anand模型分析了封装元件在热冲击下的塑性变形和应力分布,同时对不同空间位置焊点的最大应力与主要失效位置进行了对比,并运用Darveaux模型计算出焊点最危险单元的裂纹萌生、裂纹扩展速率和疲劳寿命。结果表明,在热冲击极限载荷下,封装元件的温度呈现对称分布,表面温度与内部温度差较大,约为15℃;最大变形为0.038 mm,最大变形位置为外侧镀膜处;最大应力为222.18 MPa,内部其余部分的应力值为20 MPa左右。对于内部焊点,最大应力为19.02 MPa (250 s),应力最大位置在锡球下方边缘,预估其疲劳寿命为6.29天。

基于BGA认证的课程设计、实施与评价——以江西财经大学创业概论课程为例

通过国际认证来提升办学水平和国际化程度是中国众多高校商学院的重要选择。文章以江西财经大学创业概论课程为例,通过对标BGA认证的要求,找出课程存在的潜在差距,从课程计划、教学资源、教学内容、教学方法、教学实施、教学评价等多个方面进行相应的改进与提高。

Large Energy Capacitive High-Entropy Lead-Free Ferroelectrics

Advanced lead-free energy storage ceramics play an indispensable role in next-generation pulse power capacitors market.Here,an ultrahigh energy storage density of~13.8 J cm^(-3)and a large efficiency of~82.4%are achieved in high-entropy lead-free relaxor ferroelectrics by increasing configuration entropy,named high-entropy strategy,realizing nearly ten times growth of energy storage density compared with low-entropy material.Evolution of energy storage performance and domain structure with increasing configuration entropy is systematically revealed for the first time.The achievement of excellent energy storage properties should be attributed to the enhanced random field,decreased nanodomain size,strong multiple local distortions,and improved breakdown field.Furthermore,the excellent frequency and fatigue stability as well as charge/discharge properties with superior thermal stability are also realized.The significantly enhanced comprehensive energy storage performance by increasing configuration entropy demonstrates that high entropy is an effective but convenient strategy to design new high-performance dielectrics,promoting the development of advanced capacitors.

一种基于倒装芯片的超宽带BGA封装差分传输结构

随着高速数字电路和射频微波电路对时钟频率和带宽的要求越来越高,差分传输结构因其优良的噪声抑制和抗干扰性能而受到越来越多的重视。提出了一种基于倒装芯片的超宽带球栅阵列(BGA)封装差分传输结构。整体传输结构包括采用陶瓷材料制作的倒装芯片用基板、BGA封装焊球和印制电路板(PCB)。主要分析了差分垂直传输结构的尺寸参数对阻抗和截止频率的影响,并利用阶梯过孔减小阻抗不连续性。整体结构的传输性能通过矢量网络分析仪测试的散射参数来表征。测试与仿真结果具有较好的一致性,在DC~60 GHz频段,差分传输结构的回波损耗≤-15 dB,插入损耗优于-1 dB,为超宽带倒装芯片的封装设计提供参考。

染色与渗透试验在BGA焊点质量分析中的应用

在高密度组装焊点的质量评价中,染色与渗透试验不仅简单高效、易于操作,且反馈信息最为全面。基于标准测试方法,阐述了染色与渗透试验的基本原理及操作方法,并基于失效模式典型案例分析的方式,系统研究了染色与渗透试验中球栅阵列封装(BGA)焊点常见质量缺陷的具体表现形式及其产生机理,以期为可靠性分析工程师在实际测试中提供技术参考。

面向广义Chiplet的高速BGA与PCB传输结构设计

从广义Chiplet互连设计出发,重点研究BGA区域孔串扰分析方法和优化措施。提出以单元阵列孔建模计算作为全芯片BGA区域孔串扰评估方式,进一步根据不同布线层互连分析需求构建了多层扇出的孔建模平台。单元阵列孔建模分析结果和多层扇出孔阵建模分析结果相互印证,说明以单元阵列作为串扰评估最小单元是准确的,多层扇出孔阵建模方式是高效可行的。采用多层扇出孔阵建模平台对2种BGA封装管脚对应的PCB孔串扰进行了对比分析。结果显示,在封装管脚设计时,提高邻近信号孔间距与邻近信号孔地孔间距比例比增加地孔数量和管脚间距更能有效地抑制串扰。

Photo-and Electrocatalytic CO_(2)Reduction Based on Stable Lead-Free Perovskite Cs2PdBr6

All-inorganic lead-free palladium(Pd)halogen perovskites with prominent optoelectronic properties provide admirable potential for selective photo-and electroreduction of CO_(2).But it remains unachieved for effectively converting the CO_(2)to CO with high selectivity on Pd-based perovskites driven by solar light or electricity.Herein,high-quality Cs_(2)PdBr_(6)microcrystals and nanocrystals were synthesized through a facile antisolvent method.Among all the reported pure-phase perovskites,the Cs_(2)PdBr_(6)nanocrystals synthesized at 50℃performed the highest effectiveness on CO_(2)to CO conversion generating 73.8μmol g^(-1)of CO yield with 100%selectivity under visible light illumination(λ>420 nm)for 3 h.Meanwhile,for the first time,we report a new application of lead-free perovskites,in which they are applied to electrocatalysis of CO_(2)reduction reaction.Noticeably,they showed significant electrocatalytic activity(Faradaic yield:78%for CO)and operation stability(10 h).And the surface reaction intermediates were dynamically monitored and precisely unraveled according to the in situ diffuse reflectance infrared Fourier transform spectra investigation.In combination with the density functional theory calculation,the reaction mechanism and pathways were revealed.This work not only provides significant strategies to enhance the photocatalytic performance of perovskites,but also shows excellent potential for their application in electrocatalysis.

Efficient Environment-friendly Lead-free Tin Perovskite Solar Cells Enabled by Incorporating 4-Fluorobenzylammonium Iodide Additives

Development of tin(Sn)-based perovskite solar cells(PSCs)largely lags behind that of lead counterparts due to fast crystallization process of Sn perovskite and numerous defects in both bulk and surface of Sn perovskite films.Herein,this work reports a facile strategy of introducing 4-fluorobenzylammonium iodide(FBZAI)as additives into Sn perovskite precursor to synergistically modulate the roles of benzylamine and fluorine in Sn-based PSCs.Incorporation of FBZAI can increase crystallinity,passivate defects,and inhibit the oxidation of Sn^(2+),leading to suppression of nonradiative recombination and enhancement of charge transport and collection in devices.As a result,the best-performing Sn-based PSC with the FBZAI additive achieves the maximum PCE of 13.85%with the enhanced fill factor of 77.8%and open-circuit voltage of 0.778 V.Our unencapsulated device exhibits good stability by maintaining 95%of its initial PCE after 160 days of storage.

Air-Stable,Eco-Friendly RRAMs Based on Lead-Free Cs_(3)Bi_(2)Br_(9)Perovskite Quantum Dots for High-Performance Information Storage

Development of lead-free halide perovskites that are innocuous and stable has become an attractive trend in resistive random access memory(RRAM)fields.However,their inferior memory properties compared with the lead-based analogs hinder their commercialization.Herein,the lead-free Cs_(3)Bi_(2)Br_(9)perovskite quantum dot(PQD)-based RRAMs are reported with outstanding memory performance,where Cs_(3)Bi_(2)Br_(9)quantum dots(QDs)are synthesized via a modified ligand-assisted recrystallization process.This is the first report of applying Cs_(3)Bi_(2)Br_(9)QDs as the switching layer for RRAM device.The Cs_(3)Bi_(2)Br_(9)QD device demonstrates nonvolatile resistive switching(RS)effect with large ON/OFF ratio of 105,low set voltage of-0.45 V,as well as good reliability,reproducibility,and flexibility.Concurrently,the device exhibits the notable tolerance toward moisture,heat and light illumination,and long-term stability of 200 days.More impressively,the device shows the reliable light-modulated RS behavior,and therefrom the logic gate operations including"AND"and"OR"are implemented,foreboding its prospect in logic circuits integrated with storage and computation.Such multifunctionality of device could be derived from the unique 2D layered crystal structure,small particle size,quantum confinement effect,and photoresponse of Cs_(3)Bi_(2)Br_(9)QDs.This work provides the strategy toward the high-performance RRAMs based on stable and eco-friendly perovskites for future applications.

Stable yellow light emission from lead-free copper halides single crystals for visible light communication

Yellow light-emitting diodes(LEDs) as soft light have attracted abundant attention in lithography room, museum and art gallery. However, the development of efficient yellow LEDs lags behind green and blue LEDs, and the available perovskites yellow LEDs suffer from the instability. Herein, a pressure-assisted cooling method is proposed to grow lead-free CsCu2I3single crystals, which possess uniform surface morphology and enhanced photoluminescence quantum yield(PLQY) stability, with only 10% PLQY losses after being stored in air after 5000 h.Then, the single crystals used for yellow LEDs without encapsulation exhibit a decent Correlated Color Temperature(CCT) of 4290 K, a Commission Internationale de l’Eclairage(CIE) coordinate of(0.38, 0.41), and an excellent 570-h operating stability under heating temperature of 100°C. Finally, the yellow LEDs facilitate the application in wireless visible light communication(VLC), which show a-3 dB bandwidth of 21.5 MHz and a high achievable data rate of 219.2 Mbps by using orthogonal frequency division multiplexing(OFDM) modulation with adaptive bit loading. The present work not only promotes the development of lead-free single crystals, but also inspires the potential of CsCu2I3in the field of yellow illumination and wireless VLC.

Research of Lead-free Na_(0.5)Bi_(0.5)TiO_(3)-BaTiO_(3)System Piezoelectric Ceramics

To reduce the coercive field of Na_(0.5)Bi_(0.5)TiO_(3),Ba TiO_(3)were added as dopant materials.Then the(1-x)Na_(0.5)Bi_(0.5)TiO_(3)-xBaTiO_(3)ceramic samples were produced in solid synthetic way.The optimum preparation condition and piezoelectric properties of the samples were investigated.The XRD results show that the fabric transites from rhombohedral to tetragonal gradually with the substitution of the Ba^(2+).The morphotropic phase boundaries(MPB)exists in the composition range of 0.06.

First Principle Study of Cesium-based Lead-free Halide Double Perovskites

Inorganic halide double perovskites A_(2)B'B"X_(6) have gained significant interests for their diverse composition,stable physicochemical properties,and potential for photoelectric applications.The influences of trivalent and monovalent cations on the formation energy,decomposition energy,electronic structure and optical properties of cesium-based lead-free Cs^(+)_(2)B'B"Br_(6) (B'=Na^(+),In^(+)Cu^(+),or Ag^(+);B"=Bi^(3),Sb^(3+),In^(3+)) are systematically studied.In view of the analysis and results of the selected double perovskites,for the double perovskites with different B-site trivalent cation,the band gap increases in the order of Cs_(2)AgInBr_(6),Cs_(2)AgSbBr_(6) and Cs_(2)AgBiBr_(6),with Cs_(2)AgBiBr_(6) possessing the highest thermodynamic stability.Therefore,the Bi-based perovskites are further studied to elucidate the effect of monovalent cation on their stability and electronics.Results show that the thermodynamic stability rises in the sequence of Cs_(2)NaBiBr_(6),Cs_(2)InBiBr_(6),Cs_(2)AgBiBr_(6) and Cs_(2)CuBiBr_(6).Notably,Cs_(2)CuBiBr_(6) exhibits a relatively narrow and appropriate band gap of 1.4634 eV,together with the highest absorption coefficient than other compounds,suggesting that Cs_(2)CuBiBr_(6) is a promising light absorbing material that can be further explored experimentally and be applied to optoelectronic devices.Our research offers theoretical backing for the potential optoelectronic application of cesium-based lead-free halide double perovskites in solar energy conversion.

BGA认证下物流管理专业课程思政的建设路径研究

研究管理类专业的课程思政是高校思政教育面临的重要课题。文中以物流管理专业为例,探讨BGA认证视域下开展课程思政。首先从BGA认证下构建包含课程思政元素的指标体系,并与物流管理人才培养目标进行融合,提出学生的毕业要求及指标分解;进一步提出物流管理专业课程思政的建设路径,将BGA认证、专业教育、思政育人三者有机融合,实现全程育人、全方位育人的根本任务。

BGA焊点微裂纹缺陷检测研究

球栅阵列封装(BGA)元器件的焊点隐藏于IC芯片底部,经电装后仅边缘焊点可见,因此检验其焊接质量是行业普遍的难题。探讨了BGA焊点微裂纹缺陷的产生机理和裂纹分布,设计了基于计算机分层层析成像(CL)技术的BGA焊点微裂纹缺陷检测方法和检测流程。经实测证明,该测试方法可以兼顾检测质量和效率,具有工程应用的可行性,可为BGA焊点检验人员提供参考。

Effect of Strain Rate on Tensile Behavior of Sn-9Zn-xAg-ySb;{(x, y) = (0.2, 0.6), (0.2, 0.8), (0.6, 0.2), (0.8, 0.2)} Lead-Free Solder Alloys

The tensile properties of Sn-9Zn-xAg-ySb;{(x, y) = (0.2, 0.6), (0.2, 0.8), (0.6, 0.2), (0.8, 0.2)} lead-free solders were investigated. All the test samples were annealed at 150°C for 1 hour. The tests are carried out at room temperature at the strain rate of 4.17 × 10-3 s-1, 20.85 × 10-3 s-1, and 208.5 × 10-3 s-1. It is seen that the tensile strength increases and the ductility decrease with increasing the strain rate over the investigated range. From the strain rate change test results, the strain sensitivity values are found in the range of 0.0831 to 0.1455 due to the addition of different alloying elements.

基于FPGA的BGA产品自动测试系统

射频复合基板和标准射频BGA的集成方式在新一代射频电路集成设计中得到了广泛的应用。为应对BGA产品量大、种类多导致的测试难和效率低问题,研究了一套通用型的自动化测试系统,基于FPGA实现了对产品的供电、状态以及测试夹具中开关矩阵、直流电机的控制,使测试效率和稳定性大幅提升。

球珊阵列(BGA)封装的芯片植球过程影响性分析

球珊阵列封装(BGA封装)是将裸芯片安装在不同材料的多层基板载体顶部表面形成的,根据基板材料的不同主要分为塑封BGA(PBGA)和陶瓷BGA(CBGA)。本文主要就这两种封装类型,研究植球过程对BGA封装器件本体的影响。

基于响应曲面法的BGA焊点结构参数优化设计

球栅阵列(ball grid array package,BGA)封装因其成本低、电气性能好而被广泛应用于集成电路产业中.文中建立了BGA三维模型,将等效应力作为响应目标,选取焊点直径、焊点高度、焊点间距、芯片厚度作为设计因子,采用响应曲面法设计了25组不同水平组合的焊点结构参数进行仿真计算,并基于遗传算法分析对焊点结构热振可靠性进行了优化.结果表明,焊点间距对BGA结构热振可靠性有重要影响;优化方案组合为焊点直径0.28 mm,焊点高度0.20 mm,焊点间距0.40 mm.经过优化验证分析,该优化方案较原始设计方案等效应力降低了11.92%,实现了BGA器件焊点参数优化目的.

高导热底填胶对星载端机BGA器件可靠性影响评估

针对星载产品对高导热绝缘底填胶可靠性应用需求,开展双组分高导热绝缘胶对BGA焊点可靠性及环境适应性影响评估。采用导热绝缘胶填充工艺,设计制作星载端机典型BGA菊花链网络结构试验件及端机模拟件,并开展菊花链试验件一系列鉴定级环境与可靠性试验。研究结果表明:采用BGA菊花链器件和印制板设计制作的菊花链网络结构试验件,通过高导热绝缘底填胶填充,实现导热底填胶对BGA焊点可靠性的影响评价,设计方案合理;全过程菊花链电路电阻均无增大、中断现象,无焊点失效、断裂现象,导热绝缘胶填充过程中对菊花链试验件没有引进的缺陷,高导热底填胶对BGA焊点没有影响;模拟件经过星载产品验收级环境与可靠性试验,试验前后电性能指标及监测过程无明显差异,符合指标设计要求;导热绝缘胶填充过程中对模拟件没有引进的缺陷,表明模拟件具有经受环境应力和工作应力的能力;高导热绝缘底填胶对模拟件电性能指标没有异常影响,满足星载产品散热及抗高载荷的需求,实现可靠性应用。