A series of high dielectric material Er2O3 thin films with different thicknesses were deposited on p-type Si（100）substrate by pulse laser deposition at different temperatures.Phase structures of the films were deter...A series of high dielectric material Er2O3 thin films with different thicknesses were deposited on p-type Si（100）substrate by pulse laser deposition at different temperatures.Phase structures of the films were determined by means of X-ray diffraction（XRD）and high resolution transmission electron microscopy（HRTEM）.Leakage current density was measured with an HP4142B semiconductor parameter analyzer.The XRD and HRTEM results reveal that Er2O3 thin films deposited below 400°C are amorphous,while films deposited from 400 to 840°C are well crystallized with（111）-preferential crystallographic orientation.I-V curves show that,for ultrathin crystalline Er2O3 films,the leakage current density increases by almost one order of magnitude from 6.20×10^-5 to 6.56×10^-4 A/cm^2,when the film thickness decreases by only 1.9 nm from 5.7 to 3.8 nm.However the leakage current density of ultrathin amorphous Er2O3 films with a thickness of 3.8 nm is only 1.73×10^-5 A/cm^2.Finally,analysis of leakage current density showed that leakage of ultrathin Er2O3 films at high field is mainly caused by Fowler-Nordheim tunneling,and the large leakage of ultrathin crystalline Er2O3 films could arise from impurity defects at the grain boundary.展开更多
The transport mechanisms of the reverse leakage current in the UV light-emitting diodes （380nm） are investi- gated by the temperature-dependent current-voltage measurement first. Three possible transport mechanisms,...The transport mechanisms of the reverse leakage current in the UV light-emitting diodes （380nm） are investi- gated by the temperature-dependent current-voltage measurement first. Three possible transport mechanisms, the space-limited-charge conduction, the variable-range hopping and the Poole-Frenkel emission, are proposed to explain the transport process of the reverse leakage current above 295 K, respectively. With the in-depth investigation, the former two transport mechanisms are excluded. It is found that the experimental data agree well with the Poole Frenkel emission model. Furthermore, the activation energies of the traps that cause the reverse leakage current are extracted, which are 0.05eV, 0.09eV, and 0.11 eV, respectively. This indicates that at least three types of trap states are located below the bottom of the conduction band in the depletion region of the UV LEDs.展开更多
基金supported by the Knowledge Innovation Program of the Chinese Academy of Sciences(No.072C201301)the Graduate Student Innovation Program of the Chinese Academy of Sciences
文摘A series of high dielectric material Er2O3 thin films with different thicknesses were deposited on p-type Si（100）substrate by pulse laser deposition at different temperatures.Phase structures of the films were determined by means of X-ray diffraction（XRD）and high resolution transmission electron microscopy（HRTEM）.Leakage current density was measured with an HP4142B semiconductor parameter analyzer.The XRD and HRTEM results reveal that Er2O3 thin films deposited below 400°C are amorphous,while films deposited from 400 to 840°C are well crystallized with（111）-preferential crystallographic orientation.I-V curves show that,for ultrathin crystalline Er2O3 films,the leakage current density increases by almost one order of magnitude from 6.20×10^-5 to 6.56×10^-4 A/cm^2,when the film thickness decreases by only 1.9 nm from 5.7 to 3.8 nm.However the leakage current density of ultrathin amorphous Er2O3 films with a thickness of 3.8 nm is only 1.73×10^-5 A/cm^2.Finally,analysis of leakage current density showed that leakage of ultrathin Er2O3 films at high field is mainly caused by Fowler-Nordheim tunneling,and the large leakage of ultrathin crystalline Er2O3 films could arise from impurity defects at the grain boundary.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61334002,61474091,61404097,61574110and 61574112the 111 Project of China under Grant No B12026the Scientific Research Foundation for the Returned Overseas Chinese Scholars of State Education Ministry of China under Grant No JY0600132501
文摘The transport mechanisms of the reverse leakage current in the UV light-emitting diodes （380nm） are investi- gated by the temperature-dependent current-voltage measurement first. Three possible transport mechanisms, the space-limited-charge conduction, the variable-range hopping and the Poole-Frenkel emission, are proposed to explain the transport process of the reverse leakage current above 295 K, respectively. With the in-depth investigation, the former two transport mechanisms are excluded. It is found that the experimental data agree well with the Poole Frenkel emission model. Furthermore, the activation energies of the traps that cause the reverse leakage current are extracted, which are 0.05eV, 0.09eV, and 0.11 eV, respectively. This indicates that at least three types of trap states are located below the bottom of the conduction band in the depletion region of the UV LEDs.
