Our study explored the dynamic changes in andthe relationship between the DNA damage marker8-hydroxy-2＇-deoxyguanosine （8-OHdG） and theDNA repair marker 8-hydroxyguanine DNAglycosidase 1 （hOGG1） according to the ...Our study explored the dynamic changes in andthe relationship between the DNA damage marker8-hydroxy-2＇-deoxyguanosine （8-OHdG） and theDNA repair marker 8-hydroxyguanine DNAglycosidase 1 （hOGG1） according to the length ofoccupational employment in nickel smeltingworkers. One hundred forty nickel-exposedsmelting workers and 140 age-matched unexposedoffice workers were selected from the Jinchangcohort. The 8-OHdG levels in smelting workers wassignificantly higher than in office workers （Z=-8.688,P〈0.05） and the 8-OHdG levels among nickelsmelting workers in the 10-14 y employment lengthcategory was significantly higher than among allpeers. The hOGG1 levels among smelting workerswere significantly lower than those of non-exposedworkers （Z=-8.948, P〈0.05）. There were significantdifferences between employment length andhOGG1 levels, with subjects employed in nickelsmelting for 10-14 y showing the highest levels ofhOGG1. Correlation analysis showed positivecorrelations between 8-OHdG and hOGG1 levels（r=0.413; P〈0.01）. DNA damage was increased withemployment length among nickel smelting workersand was related to the inhibition of hOGG1 repaircapacity.展开更多
Photoluminescence（PL） measurements are carried out to investigate the degradation of GaInP top cell and GaAs middle cell for GaInP/GaAs/Ge triple-junction solar cells irradiated with 1.0, 1.8 and 11.5 MeV electrons ...Photoluminescence（PL） measurements are carried out to investigate the degradation of GaInP top cell and GaAs middle cell for GaInP/GaAs/Ge triple-junction solar cells irradiated with 1.0, 1.8 and 11.5 MeV electrons with fluences ranging up to 3 × 10^15, 1 × 10^15 and 3 × 10^14 cm^-2, respectively. The degradation rates of PL intensity increase with the electron fluence and energy. Furthermore, the damage coefficient of minority carrier diffusion length is estimated by the PL radiative efficiency. The damage coefficient increases with the electron energy. The relation of damage coefficient to electron energy is discussed with the non-ionizing energy loss（NIEL）, which shows a quadratic dependence between damage coefficient and NIEL.展开更多
基金supported by grants from the National Major Special Project of Cancer Early Detection and Treatment in Jinchang City(No.CZB20120064)the Project of Employees Health Status and Disease Burden Trend Study in Nonferrous Metals Corporation(No.JKB20120013)
文摘Our study explored the dynamic changes in andthe relationship between the DNA damage marker8-hydroxy-2＇-deoxyguanosine （8-OHdG） and theDNA repair marker 8-hydroxyguanine DNAglycosidase 1 （hOGG1） according to the length ofoccupational employment in nickel smeltingworkers. One hundred forty nickel-exposedsmelting workers and 140 age-matched unexposedoffice workers were selected from the Jinchangcohort. The 8-OHdG levels in smelting workers wassignificantly higher than in office workers （Z=-8.688,P〈0.05） and the 8-OHdG levels among nickelsmelting workers in the 10-14 y employment lengthcategory was significantly higher than among allpeers. The hOGG1 levels among smelting workerswere significantly lower than those of non-exposedworkers （Z=-8.948, P〈0.05）. There were significantdifferences between employment length andhOGG1 levels, with subjects employed in nickelsmelting for 10-14 y showing the highest levels ofhOGG1. Correlation analysis showed positivecorrelations between 8-OHdG and hOGG1 levels（r=0.413; P〈0.01）. DNA damage was increased withemployment length among nickel smelting workersand was related to the inhibition of hOGG1 repaircapacity.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11675020,11375028,11075018 and 10675023
文摘Photoluminescence（PL） measurements are carried out to investigate the degradation of GaInP top cell and GaAs middle cell for GaInP/GaAs/Ge triple-junction solar cells irradiated with 1.0, 1.8 and 11.5 MeV electrons with fluences ranging up to 3 × 10^15, 1 × 10^15 and 3 × 10^14 cm^-2, respectively. The degradation rates of PL intensity increase with the electron fluence and energy. Furthermore, the damage coefficient of minority carrier diffusion length is estimated by the PL radiative efficiency. The damage coefficient increases with the electron energy. The relation of damage coefficient to electron energy is discussed with the non-ionizing energy loss（NIEL）, which shows a quadratic dependence between damage coefficient and NIEL.
