A novel high-voltage light punch-through（LPT） carrier stored trench bipolar transistor（CSTBT） with buried p-layer（BP） is proposed in this paper.Since the negative charges in the BP layer modulate the bulk electr...A novel high-voltage light punch-through（LPT） carrier stored trench bipolar transistor（CSTBT） with buried p-layer（BP） is proposed in this paper.Since the negative charges in the BP layer modulate the bulk electric field distribution,the electric field peaks both at the junction of the p base/n-type carrier stored（N-CS） layer and the corners of the trench gates are reduced,and new electric field peaks appear at the junction of the BP layer/N drift region.As a result,the overall electric field in the N drift region is enhanced and the proposed structure improves the breakdown voltage（BV） significantly compared with the LPT CSTBT.Furthermore,the proposed structure breaks the limitation of the doping concentration of the N-CS layer（NN CS） to the BV,and hence a higher NN CS can be used for the proposed LPT BP-CSTBT structure and a lower on-state voltage drop（Vce（sat）） can be obtained with almost constant BV.The results show that with a BP layer doping concentration of NBP = 7 × 10^15 cm^-3,a thickness of LBP = 2.5 μm,and a width of WBP = 5 μm,the BV of the proposed LPT BP-CSTBT increases from 1859 V to 1862 V,with NN CS increasing from 5 × 10^15 cm^-3 to 2.5 × 10^16 cm^-3.However,with the same N-drift region thickness of 150 μm and NN CS,the BV of the CSTBT decreases from 1598 V to 247 V.Meanwhile,the Vce（sat） of the proposed LPT BP-CSTBT structure decreases from 1.78 V to 1.45 V with NN CS increasing from 5 × 10^15 cm^-3 to 2.5 × 10^16 cm^-3.展开更多
The phenomena of acoustic emission in LiNbO3：Fe：Ce crystals have been observed in the process of light-induced quasi-breakdown. It is found that the ultra-high frequency acoustic signal introduced into the crystal i...The phenomena of acoustic emission in LiNbO3：Fe：Ce crystals have been observed in the process of light-induced quasi-breakdown. It is found that the ultra-high frequency acoustic signal introduced into the crystal is modulated by the low frequency acoustic waves. Its frequency increases with the increase of the intensity of incident light and its jump period of breakdown is the same as that of the photovoltaic current Ic, the change of light-induced refractive index △n and the diffracted light intensity L. This phenomenon has been analysed in this paper, which is caused by the inverse piezoelectric strain effect of the jump of space charge field during the quasi-breakdown.展开更多
This paper considers a Manpower system where “exits” of employed personnel produce some wastage or loss. This system monitors these wastages over the sequence of exit epochs {t0 = 0 and tk;k = 1, 2,…} that form a r...This paper considers a Manpower system where “exits” of employed personnel produce some wastage or loss. This system monitors these wastages over the sequence of exit epochs {t0 = 0 and tk;k = 1, 2,…} that form a recurrent process and admit recruitment when the cumulative loss of man hours crosses a threshold level Y, which is also called the breakdown level. It is assumed that the inter-exit times Tk = tk-1 - tk, k = 1, 2,… are independent and identically distributed random variables with a common cumulative distribution function (CDF) B(t) = P(Tk t) which has a tail 1 – B(t) behaving like t-v with 1 v as t → ∞. The amounts {Xk} of wastages incurred during these inter-exit times {Tk} are independent and identically distributed random variables with CDF P(Xk X) = G(x) and Y is distributed, independently of {Xk} and {tk}, as an exponentiated exponential law with CDF H(y) = P(Y y) = (1 - e-λy)n. The mean waiting time to break down of the system has been obtained assuming B(t) to be heavy tailed and as well as light tailed. For the exponential case of G(x), a comparative study has also been made between heavy tailed mean waiting time to break down and light tailed mean waiting time to break down values. The recruitment policy operating under the heavy tailed case is shown to be more economical in all types of manpower systems.展开更多
基金Project supported by the National Science and Technology Major Project of China （Grant No. 2011ZX02504-003） and the Fundamental Research Funds for the Central Universities, China （Grant No. ZYGX2011J024）.
文摘A novel high-voltage light punch-through（LPT） carrier stored trench bipolar transistor（CSTBT） with buried p-layer（BP） is proposed in this paper.Since the negative charges in the BP layer modulate the bulk electric field distribution,the electric field peaks both at the junction of the p base/n-type carrier stored（N-CS） layer and the corners of the trench gates are reduced,and new electric field peaks appear at the junction of the BP layer/N drift region.As a result,the overall electric field in the N drift region is enhanced and the proposed structure improves the breakdown voltage（BV） significantly compared with the LPT CSTBT.Furthermore,the proposed structure breaks the limitation of the doping concentration of the N-CS layer（NN CS） to the BV,and hence a higher NN CS can be used for the proposed LPT BP-CSTBT structure and a lower on-state voltage drop（Vce（sat）） can be obtained with almost constant BV.The results show that with a BP layer doping concentration of NBP = 7 × 10^15 cm^-3,a thickness of LBP = 2.5 μm,and a width of WBP = 5 μm,the BV of the proposed LPT BP-CSTBT increases from 1859 V to 1862 V,with NN CS increasing from 5 × 10^15 cm^-3 to 2.5 × 10^16 cm^-3.However,with the same N-drift region thickness of 150 μm and NN CS,the BV of the CSTBT decreases from 1598 V to 247 V.Meanwhile,the Vce（sat） of the proposed LPT BP-CSTBT structure decreases from 1.78 V to 1.45 V with NN CS increasing from 5 × 10^15 cm^-3 to 2.5 × 10^16 cm^-3.
基金Project supported by the National Natural Science Foundation of China （Grant No 69908003）.
文摘The phenomena of acoustic emission in LiNbO3：Fe：Ce crystals have been observed in the process of light-induced quasi-breakdown. It is found that the ultra-high frequency acoustic signal introduced into the crystal is modulated by the low frequency acoustic waves. Its frequency increases with the increase of the intensity of incident light and its jump period of breakdown is the same as that of the photovoltaic current Ic, the change of light-induced refractive index △n and the diffracted light intensity L. This phenomenon has been analysed in this paper, which is caused by the inverse piezoelectric strain effect of the jump of space charge field during the quasi-breakdown.
文摘This paper considers a Manpower system where “exits” of employed personnel produce some wastage or loss. This system monitors these wastages over the sequence of exit epochs {t0 = 0 and tk;k = 1, 2,…} that form a recurrent process and admit recruitment when the cumulative loss of man hours crosses a threshold level Y, which is also called the breakdown level. It is assumed that the inter-exit times Tk = tk-1 - tk, k = 1, 2,… are independent and identically distributed random variables with a common cumulative distribution function (CDF) B(t) = P(Tk t) which has a tail 1 – B(t) behaving like t-v with 1 v as t → ∞. The amounts {Xk} of wastages incurred during these inter-exit times {Tk} are independent and identically distributed random variables with CDF P(Xk X) = G(x) and Y is distributed, independently of {Xk} and {tk}, as an exponentiated exponential law with CDF H(y) = P(Y y) = (1 - e-λy)n. The mean waiting time to break down of the system has been obtained assuming B(t) to be heavy tailed and as well as light tailed. For the exponential case of G(x), a comparative study has also been made between heavy tailed mean waiting time to break down and light tailed mean waiting time to break down values. The recruitment policy operating under the heavy tailed case is shown to be more economical in all types of manpower systems.
