Fabrication of High Color Rendering Index White Light Emitting Diodes from Gold Nanoclusters

We demonstrated gold nanoclusters as color tunable emissive light converters for the application of white light emitting diodes (WLEDs). A blue LED providing 460 nm to excite gold nanoclusters mixed with UV curable material generates broad bandwidth emission at the visible range. Increasing the amount of gold nanoclusters, the correlated color temperature of WLEDs tuned from cold white to warm white, and also results in the variation of color rendering index (CRI). The highest CRI in the experiment is 92.

The Effect of Recombination Zone Positon on the Color Temperature Performance in the Color-Tunable White Organic Light-Emitting Diode

Using a color-tunable organic light-emitting diode (CT-OLED) can accord with the circadian cycle of humans and realize healthy lighting. The variation range of the correlated color temperature (CCT) is an important parameter to measure the performance of CT-OLEDs. In this paper, the effect of changing the utilization of phosphorescent materials and the position of the recombination zone (RZ) in the device are investigated by changing the thickness of the emissive layer (EML) and the doping ratio of the host and guest materials. The results show that reducing the red phosphorescent material and improving the blue phosphorescent material can affect the change direction of CCT, but it is not enough to expand the span of CCT (ΔCCT). It is more conducive to improving ΔCCT by more reasonable regulation of the position of the main RZ in EML and the energy transfer from the blue sub-EML to the red sub-EML. Device D obtains the best electro-optic and spectral characteristics, in which the maximum ΔCCT is 5746 K (2661 - 8407 K) as the voltage changes from 3.75 V to 9.75 V, the maximum current efficiency and luminance reach 18.34 cd·A-1 and 12,100 cd·m-2, respectively.

Effects of Light-Emitting Diode (LED) Red and Blue Light on the Growth and Photosynthetic Characteristics of <i>Momordica charantia</i>L.

With andromonoecious Momordica charantia L. (bitter gourd) as material, three light qualities (50 μmol·m-2·s-1) including white LED light (WL), blue monochromatic light (B, 465 nm), and red monochromatic light (R, 650 nm) were carried out to investigate their effects on seed germination, physiological and biochemical parameters, sex differentiation and photosynthetic characteristics of bitter gourd. The results showed that compared to the WL treatment, the R treatment significantly promoted seed germination, seedling height elongation and soluble sugar content, the B treatment significantly increased seedling stem diameter, reducing sugar content and soluble protein content, the R and B treatments both significantly reduced sucrose content, but their POD activity showed no significant difference. Compared with the R treatment, the B treatment significantly increased the total female flower number and female flower nod ratio in 30 nods of main stems. The study of photosynthetic characteristics found that the R and B treatments could effectively increase the stomatal conductance (GS) of leaves, significantly improved the net photosynthetic rate (Pn) compared to the WL treatment, and the effect of the B treatment was better. Compared to the R and WL treatments, the B treatment increased the maximum photosynthetic rate (Pmax), apparent quantum efficiency (AQE) and light saturation point (LSP), and reduced the dark respiration rate (Rd) and light compensation point (LCP) of the leaves. Fit light response curves showed that the adaptability and utilization of weak light in bitter gourd were middle or below, but it showed higher adaptability and utilization of strong light. Thus, it suggests that Momordica charantia is a typical sun plan with lower Rd. In summary, it is concluded that blue light has a positive effect on the seed germination, seedling growth, sex differentiation and improving the photosynthetic performance, and this will lay the foundation for artificially regulating optimum photosynthesis using specific LEDs wavelength, and help to elucidate the relationship how light quality influences the sex differentiation of plant.

Review of blue perovskite light emitting diodes with optimization strategies for perovskite film and device structure

Perovskite light emitting diodes(PeLEDs)have attracted considerable research attention because of their external quantum efficiency(EQE)of>20%and have potential scope for further improvement.However,compared to red and green PeLEDs,blue PeLEDs have not been extensively investigated,which limits their commercial applications in the fields of luminance and full-color displays.In this review,blue-PeLED-related research is categorized by the composition of perovskite.The main challenges and corresponding optimization strategies for perovskite films are summarized.Next,the novel strategies for the design of device structures of blue PeLEDs are reviewed from the perspective of transport layers and interfacial layers.Accordingly,future directions for blue PeLEDs are discussed.This review can be a guideline for optimizing perovskite film and device structure of blue PeLEDs,thereby enhancing their development and application scope.

Effects of ultrasonic bonding parameters on reliability of flip chip GaN-based light emitting diode

This work applied the ultrasonic bonding to package flip chip GaN-based light emitting diodes （flip chip LEDs） on Si substrates. The effects of ultrasonic bonding parameters on the reliability of flip chip GaN-based LED were investigated. In the sequent aging tests, samples were driven with a constant current of 80 mA for hundreds hours at the room temperature. It was found that the electroluminescence （EL） intensity variation had a large correlation to the ultrasonic power, and then to the bonding temperature and force. A high bonding temperature and ultrasonic power and a proper bonding force improved the EL intensity significantly. It was contributed to a strong atom inter-diffusion forming a stable joint at the bonding interface, The temperature fluctuation in the aging test was the main factor to generate a high inner stress forming delamination at the interface between the chip and Au bump. As a result, delamination had retarded the photons to emit out of the LED packaging and decay its EL intensity.

PEROVSKITE SEMICONDUCTOR OPTOELECTRONIC DEVICES Rational molecular passivation for high-performance perovskite light-emitting diodes

Solution-processed metal halide perovskites (MHPs) have received significant interest for cost-effective, high-performance optoelectronic devices. In addition to the great successes in photovoltaics, their excellent luminescence and charge transport properties also make them promising for light emitting diodes (LEDs). To achieve high-efficiency perovskite LEDs (PeLEDs), extensive efforts have been carried out to enhance radiative recombination rates by confining the electrons and holes. In addition to enhancing radiative recombination rates, it is equally important to decrease the non-radiative recombination for improving the device performance. Passivation of the defects could be an efficient way for reducing the non-radiative recombination.

Simulation on effect of metal/graphene hybrid transparent electrode on characteristics of GaN light emitting diodes

In order to decrease the Schottky barrier height and sheet resistance between graphene （Gr） and the p-GaN layers in GaN-based light-emitting diodes （LEDs）, some transparent thin films with good conductivity and large work function are essential to insert into Gr and p-GaN layers. In this work, the ultra-thin films of four metals （silver （Ag）, golden （Au）, nickel （Ni）, platinum （Pt）） are explored to introduce as a bridge layer into Gr and p-GaN, respectively. The effect of a different combination of Gr/metal transparent conductive layers （TCLs） on the electrical, optical, and thermal characteristics of LED was investigated by the finite element methods. It is found that both the TCLs transmittance and the surface temperature of the LED chip reduces with the increase of the metal thickness, and the transmittance decreases to about 80% with the metal thickness increasing to 2 nm. The surface temperature distribution, operation voltage, and optical output power of the LED chips with different metal/Gr combination were calculated and analyzed. Based on the electrical, optical, and thermal performance of LEDs, it is found that 1.5-nm Ag or Ni or Pt, but 1-nm Au combined with 3 layered （L） Gr is the optimal Gr/metal hybrid transparent and current spreading electrode for ultra-violet （UV） or near-UV LEDs.

Structure and luminescence of Ca_2Si_5N_8:Eu^(2+) phosphor for warm white light-emitting diodes

We have synthesized Ca2Si5N8：Eu^2＋ phosphor through a solid-state reaction and investigated its structural and luminescent properties. Our Rietveld refinement of the crystal structure of Ca1.9Eu0.1Si5N8 reveals that Eu atoms substituting for Ca atoms occupy two crystallographic positions. Between 10 K and 300 K, Ca2Si5N8：Eu^2＋ phosphor shows a broad red emission band centred at -1.97 eV-2.01 eV. The gravity centre of the excitation band is located at 3.0 eV 3.31 eV. The centroid shift of the 5d levels of Eu^2＋ is determined to be -1.17 eV, and the red-shift of the lowest absorption band to be - 0.54 eV due to the crystal field splitting. We have analysed the temperature dependence of PL by using a configuration coordinate model. The Huang-Rhys parameter S = 6.0, the phonon energy hv = 52 meV, and the Stokes shift △S = 0.57 eV are obtained. The emission intensity maximum occurring at -200 K can be explained by a trapping effect. Both photoluminescence （PL） emission intensity and decay time decrease with temperature increasing beyond 200 K due to the non-radiative process.

Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer

Blue InGaN light-emitting diodes （LEDs） with a conventional electron blocking layer （EBL）, a common n-A1GaN hole blocking layer （HBL）, and an n-A1GaN HBL with gradual A1 composition are investigated numerically, which involves analyses of the carrier concentration in the active region, energy band diagram, electrostatic field, and internal quantum efficiency （IQE）. The results indicate that LEDs with an n-AIGaN HBL with gradual AI composition exhibit better hole injection efficiency, lower electron leakage, and a smaller electrostatic field in the active region than LEDs with a conven tional p-A1GaN EBL or a common n-A1GaN HBL. Meanwhile, the efficiency droop is alleviated when an n-A1GaN HBL with gradual A1 composition is used.

High-Sensitivity Ozone Sensing Using 280 nm Deep Ultraviolet Light-Emitting Diode for Detection of Natural Hazard Ozone

Recently ozone is one of natural hazards which comes from cars, industry using ozone for sterilization of organic and inorganic materials and for water purification. So, ozone sensing becomes very important, and convenient and accurate ozone sensor is required. A new high sensitivity ozone sensing system using an deep ultra-violet light emitting diode (DUV-LED) operated at the wavelength of 280 nm has been successfully constructed. The fabrication of diode operated at 280 nm is much easier than that of DUV-LED operated at Hg lamp wavelength of 254 nm. The system is compact and possible to sense the ozone concentration less than 0.1 ppm with an accuracy of 0.5% easily with low power DUV-LED of around 200 micro Watts operated at 280 nm without any data processing circuit.

Enhancement in Light Extraction Efficiency of GaN-Based Light-Emitting Diodes Using Double Dielectric Surface Passivation

SiO2Al2O3 double dielectric stack layer was deposited on the surface of the GaN-based light-emitting diode (LED). The double dielectric stack layer enhances both the electrical characteristics and the optical output power of the LED because the first Al2O3 layer plays a role of effectively passivating the p-GaN surface and the second lower index SiO2 layer increases the critical angle of the light emitted from the LED surface. In addition, the effect of the Fresnel reflection is also responsible for the enhancement in output power of the double dielectric passivated LED. The leakage current of the LED passivated with Al2O3 layer was -3.46 × 10-11 A at -5 V, at least two and three orders lower in magnitude compared to that passivated with SiO2 layer (-7.14 × 10-9 A) and that of non-passivated LED (-1.9 × 10-8 A), respectively, which indicates that the Al2O3 layer is very effective in passivating the exposed GaN surface after dry etch and hence reduces nonradiative recombination as well as reabsorption of the emitted light near the etched surface.

Double superlattice structure for improving the performance of ultraviolet light-emitting diodes

The novel AlGaN-based ultraviolet light-emitting diodes(UV-LEDs) with double superlattice structure(DSL) are proposed and demonstrated by numerical simulation and experimental verification. The DSL consists of 30-period Mg modulation-doped p-AlGaN/u-GaN superlattice(SL) and 4-period p-AlGaN/p-GaN SL electron blocking layer, which are used to replace the p-type GaN layer and electron blocking layer of conventional UV-LEDs, respectively. Due to the special effects and interfacial stress, the AlGaN/GaN short-period superlattice can reduce the acceptor ionization energy of the ptype regions, thereby increasing the hole concentration. Meanwhile, the multi-barrier electron blocking layers are effective in suppressing electron leakage and improving hole injection. Experimental results show that the enhancements of 22.5%and 37.9% in the output power and external quantum efficiency at 120 m A appear in the device with double superlattice structure.

Design of patterned sapphire substrates for GaN-based light-emitting diodes

A new method for patterned sapphire substrate （PSS） design is developed and proven to be reliable and cost-effective. As progress is made with LEDs＇ luminous efficiency, the pattern units of PSS become more complicated, and the effect of complicated geometrical features is almost impossible to study systematically by experiments only. By employing our new method, the influence of pattern parameters can be systematically studied, and various novel patterns are designed and optimized within a reasonable time span, with great improvement in LEDs＇ light extraction efficiency （LEE）. Clearly, PSS pattern design with such a method deserves particular attention. We foresee that GaN-based LEDs on these newly designed PSSs will achieve more progress in the coming years.

Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer

The characteristics of a blue light-emitting diode （LED） with a p-InA1GaN hole injection layer （HIL） is analyzed numerically. The simulation results indicate that the newly designed structure presents superior optical and electrical performance such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-InA1GaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency.

Retinal damage after exposure to white light emitting diode lights at different intensities in Sprague-Dawley rats

Background:The usage of the light emitting diode(LED)has been increasingly applied in the illumination setting and electronic equipment.However,the effect of LED lights on the retina remains unclear.In this study,we observed and analyzed the impact of white LED lights at different intensities on the function and morphology of rat retinas.Methods:Thirty-six Sprague-Dawley rats weighing 150-180 g were randomly divided into six groups(n=6 in each group)including a normal control(NC)group,4 white LED groups at different light intensities(4,000,6,000,7,000,and 10,000 lux),and an ultraviolet B(UVB)lighting group(302 nm,1,000μw/cm2).After 24 hours of continuous illumination,full-field flash electroretinogram(FERG)and pathological examination were performed in each group.Results:As revealed by FERG,the impairment of retinal function gradually worsened with the increase of LED light intensity.In contrast,the UVB group had the most severe retinal function impairment.Particularly,the functional damage of rod cells and inner nuclear layer cells was the main FERG finding in each group.In the NC group,the retina had typical morphologies featured by well-defined structures,clearly visible border between the inner and outer segments,and neatly arranged inner and outer nuclear layer cells.After 24 hours of illumination,the inner and outer parts of the retina in the 4,000 lux group were still neatly arranged,along with a clear border;however,the inner and outer nuclear layers were randomly arranged,and some irregular nuclei and cells were lost.The damage of the internal and external retinal segments and the internal and external nuclear layers became more evident in the 6,000 lux group,7,000 lux group,and 10,000 lux group.The UVB group had a more obviously disordered arrangement of inner and outer nuclear layers and loss of cells.Conclusions:Continuous exposure to white LED light can cause structural and functional damage to rat retinas,and such damage is related to the intensity of illumination.Therefore,the risk of retinal damage should be considered during LED illumination,and proper LED illumination intensity may help to maintain eye health.

Evaluation and Enhanced Use of Light Emitting Diodes for Hydroponics

Hydroponic farming is a viable and economical farming method,which can produce safe and healthy greens and vegetables conveniently and at a relatively low cost.It is essential to provide supplemental lighting for crops grown in greenhouses to meet the daily light requirement,Daily Light Integral(DLI).The present paper investigates how effectively and efficiently LEDs can be used as a light source in hydroponics.It is important for a hydroponic grower to assess the requirement of photo synthetically active radiation(PAR)or the Photosynthetic Photon Flux Density(PPFD),in a greenhouse,and adjust the quality and quantity of supplemental lighting accordingly.A Quantum sensor(or PAR sensor)can measure PAR more accurately than a digital light meter,which measures the light intensity or illuminance in the SI unit Lux,but a PAR sensor is relatively expensive and normally not affordable by an ordinary farmer.Therefore,based on the present investigation and experimental results,a very simple way to convert light intensity measured with a Lux meter into PAR is proposed,using a simple conversion factor(41.75 according to the present work).This allows a small-scale hydroponic farmer to use a simple and inexpensive technique to assess the day to day DLI values of PAR in a greenhouse accurately using just an inexpensive light meter.The present paper also proposes a more efficient way of using LED light panels in a hydroponic system.By moving the LED light panels closer to the crop,LED light source can use a fewer number of LEDs to produce the same required daily light requirement and can increase the efficiency of the power usage to more than 80%.Specifically,the present work has determined that it is important to design more efficient vertically movable LED light panels with capabilities of switching individual LEDs on and off,for the use in greenhouses.This allows a user to control the number of LEDs that can be lit at a particular time,as required.By doing so it is possible to increase the efficiency of a LED lighting system by reducing its cost of the electricity usage.

Annealing Temperature-Dependent Luminescence Color Coordination in Eu-Doped AlN Thin Films

AlN was used as a host material and doped with Eu grown on Si substrate by pulsed laser deposition (PLD) with low substrate temperature. The X-ray diffraction (XRD) data revealed the orientation and the composition of the thin film. The surface morphology was studied by scanning electron microscope (SEM). While raising the annealing temperatures from 300˚C to 900˚C, the emission was observed from AlN: Eu under excitation of 260 nm excitation. The photoluminescence (PL) was integrated over the visible light wavelength shifted from the blue to the red zone in the CIE 1931 chromaticity coordinates. The luminescence color coordination of AlN: Eu depending on the annealing temperatures guides the further study of Eu-doped nitrides manufacturing on white light emitting diode (LED) and full color LED devices.