This work applied the ultrasonic bonding to package flip chip GaN-based light emitting diodes （flip chip LEDs） on Si substrates. The effects of ultrasonic bonding parameters on the reliability of flip chip GaN-based...This work applied the ultrasonic bonding to package flip chip GaN-based light emitting diodes （flip chip LEDs） on Si substrates. The effects of ultrasonic bonding parameters on the reliability of flip chip GaN-based LED were investigated. In the sequent aging tests, samples were driven with a constant current of 80 mA for hundreds hours at the room temperature. It was found that the electroluminescence （EL） intensity variation had a large correlation to the ultrasonic power, and then to the bonding temperature and force. A high bonding temperature and ultrasonic power and a proper bonding force improved the EL intensity significantly. It was contributed to a strong atom inter-diffusion forming a stable joint at the bonding interface, The temperature fluctuation in the aging test was the main factor to generate a high inner stress forming delamination at the interface between the chip and Au bump. As a result, delamination had retarded the photons to emit out of the LED packaging and decay its EL intensity.展开更多
High-power and high-reliability GaN/InGaN flip-chip light-emitting diodes （FCLEDs） have been demonstrated by employing a flip-chip design, and its fabrication process is developed. FCLED is composed of a LED die and...High-power and high-reliability GaN/InGaN flip-chip light-emitting diodes （FCLEDs） have been demonstrated by employing a flip-chip design, and its fabrication process is developed. FCLED is composed of a LED die and a submount which is integrated with circuits to protect the LED from electrostatic discharge （ESD） damage. The LED die is flip-chip soldered to the submount, and light is extracted through the transparent sapphire substrate instead of an absorbing Ni/Au contact layer as in conventional GaN/InGaN LED epitaxial designs. The optical and electrical characteristics of the FCLED are presented. According to ESD IEC61000-4-2 standard （human body model）, the FCLEDs tolerated at least 10 kV ESD shock have ten times more capacity than conventional GaN/InGaN LEDs. It is shown that the light output from the FCLEDs at forward current 350mA with a forward voltage of 3.3 V is 144.68 mW, and 236.59 mW at 1.0A of forward current. With employing an optimized contact scheme the FCLEDs can easily operate up to 1.0A without significant power degradation or failure. The li.fe test of FCLEDs is performed at forward current of 200 mA at room temperature. The degradation of the light output power is no more than 9% after 1010.75 h of life test, indicating the excellent reliability. FCLEDs can be used in practice where high power and high reliability are necessary, and allow designs with a reduced number of LEDs.展开更多
The diameter of the excitation beam was decreased greatly by integrating the fiber on the microfluidic chip as light propagation medium.The coupling efficiency of the fiber was improved with optical fiber collimation ...The diameter of the excitation beam was decreased greatly by integrating the fiber on the microfluidic chip as light propagation medium.The coupling efficiency of the fiber was improved with optical fiber collimation device coupling beam. The chip was placed in the darkroom to avoid the interference of the external light.The cost of the instrument was decreased with a high brightness blue LED as excitation source;the performance of the system was valuated by the determination of FITC fluorescein with a minimum detectable concentration of 2.2×10^(-8) mol/L,the Signal-to-Noise Ratio (SNR) S/N=5.The correlation coefficient of the detection system within the range of 1.8×10^(-7) mol/L～4×10^(-5)mol/L was 0.9972.展开更多
The influence of buffer layer growth conditions on the crystal quality and residual stress of GaN film grown on silicon carbide substrate is investigated. It is found that the A1GaN nucleation layer with high growth t...The influence of buffer layer growth conditions on the crystal quality and residual stress of GaN film grown on silicon carbide substrate is investigated. It is found that the A1GaN nucleation layer with high growth temperature can efficiently decrease the dislocation density and stress of the GaN film compared with A1N buffer layer. To increase the light extraction efficiency of GaN-based LEDs on SiC substrate, flip-chip structure and thin film flip-chip structure were designed and optimized. The fabricated blue LED had a maximum wall-plug efficiency of 72% at 80 mA. At 350 mA, the output power, the Vf, the dominant wavelength, and the wall-plug efficiency of the blue LED were 644 roW, 2.95 V, 460 nm, and 63%, respectively.展开更多
Conventional GaN-based flip-chip light-emitting diodes （CFC-LEDs） use Au bumps to contact the LED chip and Si submount, however the contact area is constrained by the number of Au bumps, limiting the heat dissipatio...Conventional GaN-based flip-chip light-emitting diodes （CFC-LEDs） use Au bumps to contact the LED chip and Si submount, however the contact area is constrained by the number of Au bumps, limiting the heat dissipation performance. This paper presents a flat surface high power GaN-based flip-chip light emitting diode （SFC-LED）, which can greatly improve the heat dissipation performance of the device. In order to understand the thermal performance of the SFC-LED thoroughly, a 3-D finite element model （FEM） is developed, and ANSYS is used to simulate the thermal performance. The temperature distributions of the SFC-LED and the CFC-LED are shown in this article, and the junction temperature simulation values of the SFC-LED and the CFC-LED are 112.80 ℃ and 122.97℃C, respectively. Simulation results prove that the junction temperature of the new structure is 10.17 ℃ lower than that of the conventional structure. Even if the CFC-LED has 24 Au bumps, the thermal resistance of the new structure is still far less than that of the conventional structure. The SFC-LED has a better thermal property.展开更多
Increasing light extraction efficiency is an important task when it comes to manufacturing a powerful white light emitting diode with high luminous flux per watt. In this paper the fabrication of a pyramid-shaped 3-di...Increasing light extraction efficiency is an important task when it comes to manufacturing a powerful white light emitting diode with high luminous flux per watt. In this paper the fabrication of a pyramid-shaped 3-dimensional phosphor coating is reported. It is represented by a phosphor cover, shaped into an array of pyramid like formations. It is proposed that such a structure can improve the light extraction efficiency and the color distribution characteristics of any phosphor-converted white LED. The luminous flux and luminous efficacy are being studied as a function of the forward current across the die. It was found out that with this kind of technique it was possible to achieve an 8% - 14% increase in the efficacy of the pc-LED. This increase of light output power is being attributed to the reduction of the phenomena of total internal reflection (TIR) inside the packaging module.展开更多
A simply fabricated microfluidic device integrated with a fluorescence detection system has been developed for on-line determination of ammonium in aqueous samples. A 365-nm light-emitting diode （LED） as an excitati...A simply fabricated microfluidic device integrated with a fluorescence detection system has been developed for on-line determination of ammonium in aqueous samples. A 365-nm light-emitting diode （LED） as an excitation source and a minor band pass filter were mounted into a polydimethylsiloxane （PDMS）-based microchip for the purpose of miniaturization of the entire analytical system. The ammonium sample reacted with o-phthaldialdehyde （OPA） on-chip with sodium sulfite as reducing reagent to produce a fluorescent isoindole derivative, which can emit fluorescence signal at about 425 nm when excited at 365 nm. Effects of pH, flow rate of solutions, concentrations of OPA-reagent, phosphate and sulfite salt were investigated. The calibration curve of ammonium in the range of 0.018- 1.8 μg/mL showed a good linear relationship with R2 = 0.9985, and the detection limit was （S /N = 3） 3.6 × 10 4 μg/mL. The relative standard deviation was 2.8% （n = 11） by calculating at 0.18 μg/mL ammonium for repeated detection. The system was applied to determine the ammonium concentration in rain and river waters, even extent to other analytes fluorescence detection by the presented device.展开更多
针对LED高光效、低功耗的要求,在分析LED光学性能的基础上,采用了COB（chip on board）即板上芯片封装技术。研究了不同电流下和点亮不同时间后,分析其LED光通量、光效和色温。研究分析影响LED光学性能的因素并进行测试。结果表明,用两...针对LED高光效、低功耗的要求,在分析LED光学性能的基础上,采用了COB（chip on board）即板上芯片封装技术。研究了不同电流下和点亮不同时间后,分析其LED光通量、光效和色温。研究分析影响LED光学性能的因素并进行测试。结果表明,用两种色温接近3 000 K的样品,电流由500 m A增大到900 m A,色温升高了1.685%、2.626%,光通量也随着电流的变大而升高68.532%、84.625%,但相反光效却降低了13.535%、9.971%;而在电流保持不变的情况下,点亮的时间由0~1 min、0~5 min、0~10 min,其色温分别上升了0.537%、1.209%、2.384%;0.369%、1.104%、2.943%,同时,光通量分别降低1.474%、4.855%、7.493%;2.073%、3.859%、7.793%,光效也分别降低2.527%、4.617%、6.671%;2.171%、4.903%、7.579%。实验发现,电流与点亮时间直接影响LED光学性能。展开更多
基金supported by the National Natural Science Foundation of China(Grant No.50675130)the National Key Technology Research and Development Program of the Ministry of Science and Technology of China(Grant No.2011BAE01B14)the Program for the New Century Excellent Talents in University(Grant No.NCET-07-0535)
文摘This work applied the ultrasonic bonding to package flip chip GaN-based light emitting diodes （flip chip LEDs） on Si substrates. The effects of ultrasonic bonding parameters on the reliability of flip chip GaN-based LED were investigated. In the sequent aging tests, samples were driven with a constant current of 80 mA for hundreds hours at the room temperature. It was found that the electroluminescence （EL） intensity variation had a large correlation to the ultrasonic power, and then to the bonding temperature and force. A high bonding temperature and ultrasonic power and a proper bonding force improved the EL intensity significantly. It was contributed to a strong atom inter-diffusion forming a stable joint at the bonding interface, The temperature fluctuation in the aging test was the main factor to generate a high inner stress forming delamination at the interface between the chip and Au bump. As a result, delamination had retarded the photons to emit out of the LED packaging and decay its EL intensity.
文摘High-power and high-reliability GaN/InGaN flip-chip light-emitting diodes （FCLEDs） have been demonstrated by employing a flip-chip design, and its fabrication process is developed. FCLED is composed of a LED die and a submount which is integrated with circuits to protect the LED from electrostatic discharge （ESD） damage. The LED die is flip-chip soldered to the submount, and light is extracted through the transparent sapphire substrate instead of an absorbing Ni/Au contact layer as in conventional GaN/InGaN LED epitaxial designs. The optical and electrical characteristics of the FCLED are presented. According to ESD IEC61000-4-2 standard （human body model）, the FCLEDs tolerated at least 10 kV ESD shock have ten times more capacity than conventional GaN/InGaN LEDs. It is shown that the light output from the FCLEDs at forward current 350mA with a forward voltage of 3.3 V is 144.68 mW, and 236.59 mW at 1.0A of forward current. With employing an optimized contact scheme the FCLEDs can easily operate up to 1.0A without significant power degradation or failure. The li.fe test of FCLEDs is performed at forward current of 200 mA at room temperature. The degradation of the light output power is no more than 9% after 1010.75 h of life test, indicating the excellent reliability. FCLEDs can be used in practice where high power and high reliability are necessary, and allow designs with a reduced number of LEDs.
基金financial support from the National Science Foundation of China under Grant number 20299030,60427001 and 60501020.
文摘The diameter of the excitation beam was decreased greatly by integrating the fiber on the microfluidic chip as light propagation medium.The coupling efficiency of the fiber was improved with optical fiber collimation device coupling beam. The chip was placed in the darkroom to avoid the interference of the external light.The cost of the instrument was decreased with a high brightness blue LED as excitation source;the performance of the system was valuated by the determination of FITC fluorescein with a minimum detectable concentration of 2.2×10^(-8) mol/L,the Signal-to-Noise Ratio (SNR) S/N=5.The correlation coefficient of the detection system within the range of 1.8×10^(-7) mol/L～4×10^(-5)mol/L was 0.9972.
基金Project supported by the National Basic Research Program of China(Grant No.2011CB301904)the National Natural Science Foundation of China(Grant Nos.11134006 and 61327808)
文摘The influence of buffer layer growth conditions on the crystal quality and residual stress of GaN film grown on silicon carbide substrate is investigated. It is found that the A1GaN nucleation layer with high growth temperature can efficiently decrease the dislocation density and stress of the GaN film compared with A1N buffer layer. To increase the light extraction efficiency of GaN-based LEDs on SiC substrate, flip-chip structure and thin film flip-chip structure were designed and optimized. The fabricated blue LED had a maximum wall-plug efficiency of 72% at 80 mA. At 350 mA, the output power, the Vf, the dominant wavelength, and the wall-plug efficiency of the blue LED were 644 roW, 2.95 V, 460 nm, and 63%, respectively.
文摘Conventional GaN-based flip-chip light-emitting diodes （CFC-LEDs） use Au bumps to contact the LED chip and Si submount, however the contact area is constrained by the number of Au bumps, limiting the heat dissipation performance. This paper presents a flat surface high power GaN-based flip-chip light emitting diode （SFC-LED）, which can greatly improve the heat dissipation performance of the device. In order to understand the thermal performance of the SFC-LED thoroughly, a 3-D finite element model （FEM） is developed, and ANSYS is used to simulate the thermal performance. The temperature distributions of the SFC-LED and the CFC-LED are shown in this article, and the junction temperature simulation values of the SFC-LED and the CFC-LED are 112.80 ℃ and 122.97℃C, respectively. Simulation results prove that the junction temperature of the new structure is 10.17 ℃ lower than that of the conventional structure. Even if the CFC-LED has 24 Au bumps, the thermal resistance of the new structure is still far less than that of the conventional structure. The SFC-LED has a better thermal property.
文摘Increasing light extraction efficiency is an important task when it comes to manufacturing a powerful white light emitting diode with high luminous flux per watt. In this paper the fabrication of a pyramid-shaped 3-dimensional phosphor coating is reported. It is represented by a phosphor cover, shaped into an array of pyramid like formations. It is proposed that such a structure can improve the light extraction efficiency and the color distribution characteristics of any phosphor-converted white LED. The luminous flux and luminous efficacy are being studied as a function of the forward current across the die. It was found out that with this kind of technique it was possible to achieve an 8% - 14% increase in the efficacy of the pc-LED. This increase of light output power is being attributed to the reduction of the phenomena of total internal reflection (TIR) inside the packaging module.
基金supported by the National Natural Science Foundation of China (No. 90813015, 30772006)the National Basic Research Program (973) of China (No.2007CB714507)
文摘A simply fabricated microfluidic device integrated with a fluorescence detection system has been developed for on-line determination of ammonium in aqueous samples. A 365-nm light-emitting diode （LED） as an excitation source and a minor band pass filter were mounted into a polydimethylsiloxane （PDMS）-based microchip for the purpose of miniaturization of the entire analytical system. The ammonium sample reacted with o-phthaldialdehyde （OPA） on-chip with sodium sulfite as reducing reagent to produce a fluorescent isoindole derivative, which can emit fluorescence signal at about 425 nm when excited at 365 nm. Effects of pH, flow rate of solutions, concentrations of OPA-reagent, phosphate and sulfite salt were investigated. The calibration curve of ammonium in the range of 0.018- 1.8 μg/mL showed a good linear relationship with R2 = 0.9985, and the detection limit was （S /N = 3） 3.6 × 10 4 μg/mL. The relative standard deviation was 2.8% （n = 11） by calculating at 0.18 μg/mL ammonium for repeated detection. The system was applied to determine the ammonium concentration in rain and river waters, even extent to other analytes fluorescence detection by the presented device.
文摘针对LED高光效、低功耗的要求,在分析LED光学性能的基础上,采用了COB（chip on board）即板上芯片封装技术。研究了不同电流下和点亮不同时间后,分析其LED光通量、光效和色温。研究分析影响LED光学性能的因素并进行测试。结果表明,用两种色温接近3 000 K的样品,电流由500 m A增大到900 m A,色温升高了1.685%、2.626%,光通量也随着电流的变大而升高68.532%、84.625%,但相反光效却降低了13.535%、9.971%;而在电流保持不变的情况下,点亮的时间由0~1 min、0~5 min、0~10 min,其色温分别上升了0.537%、1.209%、2.384%;0.369%、1.104%、2.943%,同时,光通量分别降低1.474%、4.855%、7.493%;2.073%、3.859%、7.793%,光效也分别降低2.527%、4.617%、6.671%;2.171%、4.903%、7.579%。实验发现,电流与点亮时间直接影响LED光学性能。
