Boiling structures on evaporation surface of red copper sheet with a diameter (D) of 10 mm and a wall thickness (h) of 1 mm were processed by the ploughing-extrusion (P-E) processing method, which is one part of the p...Boiling structures on evaporation surface of red copper sheet with a diameter (D) of 10 mm and a wall thickness (h) of 1 mm were processed by the ploughing-extrusion (P-E) processing method, which is one part of the phase-change heat sink for high power (HP) light emitting diode (LED). The experimental results show that two different structures of rectangular- and triangular-shaped micro-grooves are formed in P-E process. When P-E depth (ap), interval of helical grooves (dp) and rotation speed (n) are 0.12 mm, 0.2 mm and 100 r/min, respectively, the boiling structures of triangular-shaped grooves with the fin height of 0.15 mm that has good evaporation performance are obtained. The shapes of the boiling structures are restricted by dp and ap, and dp is determined by n and amount of feed (f). The ploughing speed has an important influence on the formation of groove structure in P-E process.展开更多
As the blue and yellow lights are complementary colors, a blue InGaN LED chip is coated by a yellow phosphor film to generate white light based on luminescence conversion mechanism. The emitted light of a blue LED is ...As the blue and yellow lights are complementary colors, a blue InGaN LED chip is coated by a yellow phosphor film to generate white light based on luminescence conversion mechanism. The emitted light of a blue LED is used as the primary source for exciting fluorescent material such as cerium doped yttrium aluminum garnet with the formula Y3Al5O12∶Ce3+(in short: YAG∶Ce3+). The matching of the spectrum of the blue LED chips and the YAG∶Ce3+ yellow phosphor is studied to improve the conversion efficiency. The packaging methods and manufacturing processes for high-power single-chip-white-LEDs are introduced. The uniformity of the output white light is investigated. Based on the characteristics of the high-power white LEDs, some approaches and processes are suggested to improve the light uniformity when they are fabricated. The effectiveness of those approaches on the improvement of LEDs is discussed in detail and some interesting conclusions are also presented.展开更多
The huge amount of electrical power of many countries is consumed in lighting the streets. However, vehicles pass with very low rate in specific periods of time and parts of the streets are not occupied by vehicles ov...The huge amount of electrical power of many countries is consumed in lighting the streets. However, vehicles pass with very low rate in specific periods of time and parts of the streets are not occupied by vehicles over time. In this paper, we propose a system that automatically switches off the light for the parts of the streets having no vehicles and turns on the light for these parts once there are some vehicles that are going to come. Logically, this system may save a large amount of the electrical power. In addition, it may increase the lifetime of the lamps and reduce the pollutions. This system automatically controls and monitors the light of the streets. It can light only the parts that have vehicles and help on the maintenance of the lighting equipments. Vehicular Ad-Hoc Networks (VANET) make it possible to propose such system. VANET enables the possibility to know the presence of vehicles, their locations, their directions and their speeds in real time. These quantities are what are needed to develop this system. An advantage of using VANET is that there is no need to use specific network and equipments to design the system, but VANET infrastructure will be used. This decreases the cost and speed up the deployment of such system. This paper focuses on the proposal of different possible architectures of this system. Results show that the saved energy may reach up to 65% and an increase of the lifetime of the lamps of 53%.展开更多
提出一种基于旋转不变信号参数估计技术ESPRIT(Estimation of signal parameters via rotational invariance technique)、模式搜索算法PSA(Pattern search algorithm)与轻型梯度提升机LightGBM(Light gradient boosting machine)结合...提出一种基于旋转不变信号参数估计技术ESPRIT(Estimation of signal parameters via rotational invariance technique)、模式搜索算法PSA(Pattern search algorithm)与轻型梯度提升机LightGBM(Light gradient boosting machine)结合的感应电动机转子断条数目诊断新方法。模拟了转子断条故障下的瞬时无功功率信号并用其衡量ESPRIT-PSA的性能。结果表明:ESPRIT-PSA只需短时数据就能准确测量瞬时无功功率信号中的转子断条故障特征分量。随后,为解决现有的电机瞬时无功功率信号分析MIRPSA(Motor instantaneous reactive power signal analysis)类方法无法准确诊断转子断条数目的问题,引入LightGBM对转子断条故障进行多分类以准确诊断转子断条数目。最后针对一台异步电动机进行转子断条诊断实验,结果表明:该方法是有效的,并且因将瞬时无功功率作为分析信号而适用于电机低转差率的情况。展开更多
High-power and high-reliability GaN/InGaN flip-chip light-emitting diodes （FCLEDs） have been demonstrated by employing a flip-chip design, and its fabrication process is developed. FCLED is composed of a LED die and...High-power and high-reliability GaN/InGaN flip-chip light-emitting diodes （FCLEDs） have been demonstrated by employing a flip-chip design, and its fabrication process is developed. FCLED is composed of a LED die and a submount which is integrated with circuits to protect the LED from electrostatic discharge （ESD） damage. The LED die is flip-chip soldered to the submount, and light is extracted through the transparent sapphire substrate instead of an absorbing Ni/Au contact layer as in conventional GaN/InGaN LED epitaxial designs. The optical and electrical characteristics of the FCLED are presented. According to ESD IEC61000-4-2 standard （human body model）, the FCLEDs tolerated at least 10 kV ESD shock have ten times more capacity than conventional GaN/InGaN LEDs. It is shown that the light output from the FCLEDs at forward current 350mA with a forward voltage of 3.3 V is 144.68 mW, and 236.59 mW at 1.0A of forward current. With employing an optimized contact scheme the FCLEDs can easily operate up to 1.0A without significant power degradation or failure. The li.fe test of FCLEDs is performed at forward current of 200 mA at room temperature. The degradation of the light output power is no more than 9% after 1010.75 h of life test, indicating the excellent reliability. FCLEDs can be used in practice where high power and high reliability are necessary, and allow designs with a reduced number of LEDs.展开更多
In recent years,solution-processible semiconductors with perovskite or perovskite-inspired structures have been extensively investigated for optoelectronic applications.In particular,silver-bismuth-halides have been i...In recent years,solution-processible semiconductors with perovskite or perovskite-inspired structures have been extensively investigated for optoelectronic applications.In particular,silver-bismuth-halides have been identified as especially promising because of their bulk properties and lack of heavily toxic elements.This study investigates the potential of Ag2BiI5 for near-infrared(NIR)-blind visible light photodetection,which is critical to emerging applications(e.g.,wearable optoelectronics and the Internet of Things).Self-powered photodetectors were realized and provided a near-constant≈100 mA W−1 responsivity through the visible,a NIR rejection ratio of>250,a long-wavelength responsivity onset matching standard colorimetric functions,and a linear photoresponse of>5 orders of magnitude.The optoelectronic characterization of Ag2BiI5 photodetectors additionally revealed consistency with one-center models and the role of the carrier collection distance in self-powered mode.This study provides a positive outlook of Ag2BiI5 toward emerging applications on low-cost and low-power NIR-blind visible light photodetector.展开更多
The reasons for low output power of AlGalnP Light Emitting Diodes （LEDs） have been analysed. LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especiall...The reasons for low output power of AlGalnP Light Emitting Diodes （LEDs） have been analysed. LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especially at a large injected current which would reduce both the internal and external quantum efficiencies. Two kinds of LEDs with the same active region but different window layers have been fabricated. The new window layer composed of textured 0.5 μm GaP and thin Indium-Tin-Oxide film has shown that low external quantum efficiency （EQE） has serious impaction on the internal quantum efficiency （IQE）, because the carrier distribution will change with the body temperature increasing due to the heat inside, and the test results have shown the evidence of LEDs with lower output power and bigger wavelength red shift.展开更多
基金Projects(50436010, 50675070) supported by the National Natural Science Foundation of China Project(07118064) supported by the Natural Science Foundation of Guangdong Province, China+1 种基金 Project(U0834002) supported by the Joint Fund of NSFC-Guangdong of ChinaProjects(SY200806300289A, JSA200903190981A) supported by Shenzhen Scientific Program, China
文摘Boiling structures on evaporation surface of red copper sheet with a diameter (D) of 10 mm and a wall thickness (h) of 1 mm were processed by the ploughing-extrusion (P-E) processing method, which is one part of the phase-change heat sink for high power (HP) light emitting diode (LED). The experimental results show that two different structures of rectangular- and triangular-shaped micro-grooves are formed in P-E process. When P-E depth (ap), interval of helical grooves (dp) and rotation speed (n) are 0.12 mm, 0.2 mm and 100 r/min, respectively, the boiling structures of triangular-shaped grooves with the fin height of 0.15 mm that has good evaporation performance are obtained. The shapes of the boiling structures are restricted by dp and ap, and dp is determined by n and amount of feed (f). The ploughing speed has an important influence on the formation of groove structure in P-E process.
基金"863"Project from Ministry of Science & Technology of China(2006AA03A116)
文摘As the blue and yellow lights are complementary colors, a blue InGaN LED chip is coated by a yellow phosphor film to generate white light based on luminescence conversion mechanism. The emitted light of a blue LED is used as the primary source for exciting fluorescent material such as cerium doped yttrium aluminum garnet with the formula Y3Al5O12∶Ce3+(in short: YAG∶Ce3+). The matching of the spectrum of the blue LED chips and the YAG∶Ce3+ yellow phosphor is studied to improve the conversion efficiency. The packaging methods and manufacturing processes for high-power single-chip-white-LEDs are introduced. The uniformity of the output white light is investigated. Based on the characteristics of the high-power white LEDs, some approaches and processes are suggested to improve the light uniformity when they are fabricated. The effectiveness of those approaches on the improvement of LEDs is discussed in detail and some interesting conclusions are also presented.
文摘The huge amount of electrical power of many countries is consumed in lighting the streets. However, vehicles pass with very low rate in specific periods of time and parts of the streets are not occupied by vehicles over time. In this paper, we propose a system that automatically switches off the light for the parts of the streets having no vehicles and turns on the light for these parts once there are some vehicles that are going to come. Logically, this system may save a large amount of the electrical power. In addition, it may increase the lifetime of the lamps and reduce the pollutions. This system automatically controls and monitors the light of the streets. It can light only the parts that have vehicles and help on the maintenance of the lighting equipments. Vehicular Ad-Hoc Networks (VANET) make it possible to propose such system. VANET enables the possibility to know the presence of vehicles, their locations, their directions and their speeds in real time. These quantities are what are needed to develop this system. An advantage of using VANET is that there is no need to use specific network and equipments to design the system, but VANET infrastructure will be used. This decreases the cost and speed up the deployment of such system. This paper focuses on the proposal of different possible architectures of this system. Results show that the saved energy may reach up to 65% and an increase of the lifetime of the lamps of 53%.
文摘提出一种基于旋转不变信号参数估计技术ESPRIT(Estimation of signal parameters via rotational invariance technique)、模式搜索算法PSA(Pattern search algorithm)与轻型梯度提升机LightGBM(Light gradient boosting machine)结合的感应电动机转子断条数目诊断新方法。模拟了转子断条故障下的瞬时无功功率信号并用其衡量ESPRIT-PSA的性能。结果表明:ESPRIT-PSA只需短时数据就能准确测量瞬时无功功率信号中的转子断条故障特征分量。随后,为解决现有的电机瞬时无功功率信号分析MIRPSA(Motor instantaneous reactive power signal analysis)类方法无法准确诊断转子断条数目的问题,引入LightGBM对转子断条故障进行多分类以准确诊断转子断条数目。最后针对一台异步电动机进行转子断条诊断实验,结果表明:该方法是有效的,并且因将瞬时无功功率作为分析信号而适用于电机低转差率的情况。
文摘High-power and high-reliability GaN/InGaN flip-chip light-emitting diodes （FCLEDs） have been demonstrated by employing a flip-chip design, and its fabrication process is developed. FCLED is composed of a LED die and a submount which is integrated with circuits to protect the LED from electrostatic discharge （ESD） damage. The LED die is flip-chip soldered to the submount, and light is extracted through the transparent sapphire substrate instead of an absorbing Ni/Au contact layer as in conventional GaN/InGaN LED epitaxial designs. The optical and electrical characteristics of the FCLED are presented. According to ESD IEC61000-4-2 standard （human body model）, the FCLEDs tolerated at least 10 kV ESD shock have ten times more capacity than conventional GaN/InGaN LEDs. It is shown that the light output from the FCLEDs at forward current 350mA with a forward voltage of 3.3 V is 144.68 mW, and 236.59 mW at 1.0A of forward current. With employing an optimized contact scheme the FCLEDs can easily operate up to 1.0A without significant power degradation or failure. The li.fe test of FCLEDs is performed at forward current of 200 mA at room temperature. The degradation of the light output power is no more than 9% after 1010.75 h of life test, indicating the excellent reliability. FCLEDs can be used in practice where high power and high reliability are necessary, and allow designs with a reduced number of LEDs.
基金financial support from the National Natural Science Foundation of China (61750110517 and 61805166)the Jiangsu Province Natural Science Foundation (BK20170345)+3 种基金supported by the Collaborative Innovation Center of Suzhou Nano Science & Technologythe Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)the 111 Projectthe Joint International Research Laboratory of Carbon-Based Functional Materials and Devices
文摘In recent years,solution-processible semiconductors with perovskite or perovskite-inspired structures have been extensively investigated for optoelectronic applications.In particular,silver-bismuth-halides have been identified as especially promising because of their bulk properties and lack of heavily toxic elements.This study investigates the potential of Ag2BiI5 for near-infrared(NIR)-blind visible light photodetection,which is critical to emerging applications(e.g.,wearable optoelectronics and the Internet of Things).Self-powered photodetectors were realized and provided a near-constant≈100 mA W−1 responsivity through the visible,a NIR rejection ratio of>250,a long-wavelength responsivity onset matching standard colorimetric functions,and a linear photoresponse of>5 orders of magnitude.The optoelectronic characterization of Ag2BiI5 photodetectors additionally revealed consistency with one-center models and the role of the carrier collection distance in self-powered mode.This study provides a positive outlook of Ag2BiI5 toward emerging applications on low-cost and low-power NIR-blind visible light photodetector.
基金Project supported by the National High Technology Research and Development Program of China(Grant No.2006AA03A121)the National Basic Research Program of China(Grant No.2006CB604900)
文摘The reasons for low output power of AlGalnP Light Emitting Diodes （LEDs） have been analysed. LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especially at a large injected current which would reduce both the internal and external quantum efficiencies. Two kinds of LEDs with the same active region but different window layers have been fabricated. The new window layer composed of textured 0.5 μm GaP and thin Indium-Tin-Oxide film has shown that low external quantum efficiency （EQE） has serious impaction on the internal quantum efficiency （IQE）, because the carrier distribution will change with the body temperature increasing due to the heat inside, and the test results have shown the evidence of LEDs with lower output power and bigger wavelength red shift.
