The single event effect of a silicon–germanium heterojunction bipolar transistor(SiGe HBT) was thoroughly investigated. By considering the worst bias condition, the sensitive area of the proposed device was scanned w...The single event effect of a silicon–germanium heterojunction bipolar transistor(SiGe HBT) was thoroughly investigated. By considering the worst bias condition, the sensitive area of the proposed device was scanned with a pulsed laser.With variation of the collector bias and pulsed laser incident energy, the single event transient of the SiGe HBT was studied.Moreover, the single event transient produced by laser irradiation at a wavelength of 532 nm was more pronounced than at a wavelength of 1064 nm. Finally, the impact of the equivalent linear energy transfer of the 1064 nm pulsed laser on the single event transient was qualitatively examined by performing technology computer-aided design simulations, and a good consistency between the experimental data and the simulated outcomes was attained.展开更多
The single event effect(SEE) is an important consideration in electronic devices used in space environments because it can lead to spacecraft anomalies and failures. The linear energy transfer(LET) of ions is commonly...The single event effect(SEE) is an important consideration in electronic devices used in space environments because it can lead to spacecraft anomalies and failures. The linear energy transfer(LET) of ions is commonly investigated in studies of SEE. The use of a thin detector is an economical way of directly measuring the LET in space. An LET telescope consists of a thin detector as the front detector(D1), along with a back detector that indicates whether D1 was penetrated. The particle radiation effect monitor(PREM) introduced in this paper is designed to categorize the LET into four bins of 0.2–0.4, 0.4–1.0, 1.0–2.0 and 2.0–20 Me V·cm^2/mg, and one integral bin of LET>20 Me V·cm^2/mg. After calibration with heavy ions and Geant4 analysis, the LET boundaries of the first four bins are determined to be 0.236, 0.479, 1.196, 2.254, and 17.551 Me V·cm^2/mg, whereas that of the integral bin is determined to be LET>14.790 Me V·cm^2/mg. The acceptances are calculated by Geant4 analysis as 0.452, 0.451, 0.476, 0.446, and 1.334, respectively. The LET accuracy is shown to depend on the thickness of D1; as D1 is made thinner, the accuracy of the measured values increases.展开更多
基于Synopsys公司3D TCAD器件模拟,该文通过改变3种工艺参数,研究65 nm体硅CMOS工艺下PMOS晶体管工艺参数变化对静态随机存储器(Static Random Access Memory,SRAM)存储单元翻转恢复效应的影响。研究结果表明:降低PMOS晶体管的P+深阱掺...基于Synopsys公司3D TCAD器件模拟,该文通过改变3种工艺参数,研究65 nm体硅CMOS工艺下PMOS晶体管工艺参数变化对静态随机存储器(Static Random Access Memory,SRAM)存储单元翻转恢复效应的影响。研究结果表明:降低PMOS晶体管的P+深阱掺杂浓度、N阱掺杂浓度或调阈掺杂浓度,有助于减小翻转恢复所需的线性能量传输值(Linear Energy Transfer,LET);通过降低PMOS晶体管的P+深阱掺杂浓度和N阱掺杂浓度,使翻转恢复时间变长。该文研究结论有助于优化SRAM存储单元抗单粒子效应(Single-Event Effect,SEE)设计,并且可以指导体硅CMOS工艺下抗辐射集成电路的研究。展开更多
A simulation approach is developed to obtain the linear energy transfer(LET) spectrum of all secondary ions and predict single event upset(SEU) occurrence induced by neutron in memory devices. Neutron reaction channel...A simulation approach is developed to obtain the linear energy transfer(LET) spectrum of all secondary ions and predict single event upset(SEU) occurrence induced by neutron in memory devices. Neutron reaction channels, secondary ion species and energy ranges, and LET calculation method are introduced respectively. Experimental results of neutron induced SEU effects on static random access memory(SRAM) and programmable read only memory(EEPROM) are presented to confirm the validity of the simulation results.展开更多
The low dose effects induced by carbon ions on Chinese hamster V79 cells and murine melanoma B16 cells were investigated in this paper. Both cell lines were divided into four groups for irradiation: (1) control, (2) 0...The low dose effects induced by carbon ions on Chinese hamster V79 cells and murine melanoma B16 cells were investigated in this paper. Both cell lines were divided into four groups for irradiation: (1) control, (2) 0.02 Gy or 0.05 Gy(D1), (3) 1 Gy(D2), (4) D1+D2. The survivors and micronuclei were studied as biological endpoints. The results of group (1) and group (2) showed that there were no obvious differences on micronucleus frequency but there were significant increases when irradiation dose was 0.02Gy on colony formation efficiency. Although low dose ion irradiation could not contribute to DNA damages, it could enhance the colony formation efficiency. In the study of group (3) and (4), when the ion dose was 0.02 Gy, there were evident increases on surviving fraction and decreases on micronucleus frequency, but there were no statistical changes on these endpoints when the ion dose was 0.05Gy. This meant that high LET radiation could induce the adaptive response of cultured cells, furthermore, in the range of inducing ion dose , low dose irradiation was more profitable than high dose one.展开更多
采用理论分析与试验对比的方式,对脉宽调制(Pulse Width Modulation,PWM)控制器的脉冲激光模拟单粒子瞬态(Single Event Transient,SET)效应的等效性进行研究。对常用的电流型PWM控制器采用脉冲激光进行照射试验,通过改变激光能量得到...采用理论分析与试验对比的方式,对脉宽调制(Pulse Width Modulation,PWM)控制器的脉冲激光模拟单粒子瞬态(Single Event Transient,SET)效应的等效性进行研究。对常用的电流型PWM控制器采用脉冲激光进行照射试验,通过改变激光能量得到不同条件下的试验数据,并与重离子照射条件下的试验数据进行对比。试验结果证实线状能量传递值LET(Linear Energy Transfer)=65.2 Me V·cm2·mg-1的868.3 Me V Xe重离子与波长1.064μm、能量为1–2 n J的脉冲激光产生的SET效应最为接近。试验结果为采用脉冲激光对同类型PWM控制器进行模拟SET试验提供了数据支撑。展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 61574171, 61704127, 11875229,51872251, and 12027813)。
文摘The single event effect of a silicon–germanium heterojunction bipolar transistor(SiGe HBT) was thoroughly investigated. By considering the worst bias condition, the sensitive area of the proposed device was scanned with a pulsed laser.With variation of the collector bias and pulsed laser incident energy, the single event transient of the SiGe HBT was studied.Moreover, the single event transient produced by laser irradiation at a wavelength of 532 nm was more pronounced than at a wavelength of 1064 nm. Finally, the impact of the equivalent linear energy transfer of the 1064 nm pulsed laser on the single event transient was qualitatively examined by performing technology computer-aided design simulations, and a good consistency between the experimental data and the simulated outcomes was attained.
基金supported by the National Natural Science Foundation of China(Grant No.41374181)the National Key Scientific Instrument and Equipment Development ProjectsChina(Grant No.2012YQ03014207)
文摘The single event effect(SEE) is an important consideration in electronic devices used in space environments because it can lead to spacecraft anomalies and failures. The linear energy transfer(LET) of ions is commonly investigated in studies of SEE. The use of a thin detector is an economical way of directly measuring the LET in space. An LET telescope consists of a thin detector as the front detector(D1), along with a back detector that indicates whether D1 was penetrated. The particle radiation effect monitor(PREM) introduced in this paper is designed to categorize the LET into four bins of 0.2–0.4, 0.4–1.0, 1.0–2.0 and 2.0–20 Me V·cm^2/mg, and one integral bin of LET>20 Me V·cm^2/mg. After calibration with heavy ions and Geant4 analysis, the LET boundaries of the first four bins are determined to be 0.236, 0.479, 1.196, 2.254, and 17.551 Me V·cm^2/mg, whereas that of the integral bin is determined to be LET>14.790 Me V·cm^2/mg. The acceptances are calculated by Geant4 analysis as 0.452, 0.451, 0.476, 0.446, and 1.334, respectively. The LET accuracy is shown to depend on the thickness of D1; as D1 is made thinner, the accuracy of the measured values increases.
文摘基于Synopsys公司3D TCAD器件模拟,该文通过改变3种工艺参数,研究65 nm体硅CMOS工艺下PMOS晶体管工艺参数变化对静态随机存储器(Static Random Access Memory,SRAM)存储单元翻转恢复效应的影响。研究结果表明:降低PMOS晶体管的P+深阱掺杂浓度、N阱掺杂浓度或调阈掺杂浓度,有助于减小翻转恢复所需的线性能量传输值(Linear Energy Transfer,LET);通过降低PMOS晶体管的P+深阱掺杂浓度和N阱掺杂浓度,使翻转恢复时间变长。该文研究结论有助于优化SRAM存储单元抗单粒子效应(Single-Event Effect,SEE)设计,并且可以指导体硅CMOS工艺下抗辐射集成电路的研究。
基金Supported by National Natural Science Foundation of China(No.11235008)
文摘A simulation approach is developed to obtain the linear energy transfer(LET) spectrum of all secondary ions and predict single event upset(SEU) occurrence induced by neutron in memory devices. Neutron reaction channels, secondary ion species and energy ranges, and LET calculation method are introduced respectively. Experimental results of neutron induced SEU effects on static random access memory(SRAM) and programmable read only memory(EEPROM) are presented to confirm the validity of the simulation results.
基金Supported by "Hope for the West" Fund of the Chinese Academy of Science (No. XB 980604)
文摘The low dose effects induced by carbon ions on Chinese hamster V79 cells and murine melanoma B16 cells were investigated in this paper. Both cell lines were divided into four groups for irradiation: (1) control, (2) 0.02 Gy or 0.05 Gy(D1), (3) 1 Gy(D2), (4) D1+D2. The survivors and micronuclei were studied as biological endpoints. The results of group (1) and group (2) showed that there were no obvious differences on micronucleus frequency but there were significant increases when irradiation dose was 0.02Gy on colony formation efficiency. Although low dose ion irradiation could not contribute to DNA damages, it could enhance the colony formation efficiency. In the study of group (3) and (4), when the ion dose was 0.02 Gy, there were evident increases on surviving fraction and decreases on micronucleus frequency, but there were no statistical changes on these endpoints when the ion dose was 0.05Gy. This meant that high LET radiation could induce the adaptive response of cultured cells, furthermore, in the range of inducing ion dose , low dose irradiation was more profitable than high dose one.
文摘采用理论分析与试验对比的方式,对脉宽调制(Pulse Width Modulation,PWM)控制器的脉冲激光模拟单粒子瞬态(Single Event Transient,SET)效应的等效性进行研究。对常用的电流型PWM控制器采用脉冲激光进行照射试验,通过改变激光能量得到不同条件下的试验数据,并与重离子照射条件下的试验数据进行对比。试验结果证实线状能量传递值LET(Linear Energy Transfer)=65.2 Me V·cm2·mg-1的868.3 Me V Xe重离子与波长1.064μm、能量为1–2 n J的脉冲激光产生的SET效应最为接近。试验结果为采用脉冲激光对同类型PWM控制器进行模拟SET试验提供了数据支撑。
