Liquid phase epitaxy （LPE） is a mature technology. Early experiments on single magnetic crystal films fabricated by LPE were focused mainly on thick films for microwave and magneto-optical devices. The LPE is an exc...Liquid phase epitaxy （LPE） is a mature technology. Early experiments on single magnetic crystal films fabricated by LPE were focused mainly on thick films for microwave and magneto-optical devices. The LPE is an excellent way to make a thick film, low damping magnetic garnet film and high-quality magneto-optical material. Today, the principal challenge in the applied material is to create sub-micrometer devices by using modern photolithography technique. Until now the magnetic garnet films fabricated by LPE still show the best quality even on a nanoscale （about 100 nm）, which was considered to be impossible for LPE method.展开更多
InAsSb epilayers with a cutoff wavelength of 4.8 μm have been successfully grown on InAs substrates by one-step liquid phase epitaxy （LPE） technology. The epilayers were characterized by X-ray diffraction （XRD）, ...InAsSb epilayers with a cutoff wavelength of 4.8 μm have been successfully grown on InAs substrates by one-step liquid phase epitaxy （LPE） technology. The epilayers were characterized by X-ray diffraction （XRD）, Fourier transform infrared （PTIR） transmittance measurements and scanning electron microscopy （SEM）. The influence of different growth conditions on the optical and structural properties of the materials was studied. The results revealed that the good crystalline quality, mirror smooth surface and flat interface of InAsSb epilayers were achieved. They benefited from optimized growth conditions, i.e., sufficient homogeneity of the growth melt and a very slow cooling rate.展开更多
A novel horizontal push-pull multi-substrate epitaxy boat with three separate cells is introduced in this article, with which multi-substrate LPE processing is feasible in horizontal LPE furnace. The processes of LPE ...A novel horizontal push-pull multi-substrate epitaxy boat with three separate cells is introduced in this article, with which multi-substrate LPE processing is feasible in horizontal LPE furnace. The processes of LPE AlxGa1-x)As/ GaAs solar cells are studied and the efficiency of the solar cells achieved 19.8% （AMO, 25℃, 120 mW/cm2）.展开更多
A modified liquid phase epitaxy apparatus for semiconductor materials was used to measure the solubility of GaAs in Bi.Two phase diagrams rich in Bi under H_2 and N_2 atmospheres were obtained according to the results...A modified liquid phase epitaxy apparatus for semiconductor materials was used to measure the solubility of GaAs in Bi.Two phase diagrams rich in Bi under H_2 and N_2 atmospheres were obtained according to the results of measurement.A new phenomenon,in which the parameter Q value(quantity of GaAs dissolved in Bi in fixed time/saturation quantitu,of GaAs in Bi)was different from each other at various temperatures and there existed a maxi- mum Q value at definite temperature,was observed.This phenomenon may be regarded as a common feature of a simple binary metallic system which has the phase diagram similar to that of Bi-GaAs.The difference observed from the dependence of Q values on temperature in both H_2 and N_2 atmospheres was discussed.展开更多
In this paper,the fabrication of 1.3μm InGaAsP/InP gain-coupled DFB lasers with lossgrating is reported for the first time.A technique of regrowth on corrugated surface usingLPE is developed.By using GaAs as the cove...In this paper,the fabrication of 1.3μm InGaAsP/InP gain-coupled DFB lasers with lossgrating is reported for the first time.A technique of regrowth on corrugated surface usingLPE is developed.By using GaAs as the cover of thermal protection and controlling theamount of the super cooling,high quality epitxial layers on corrugated surface are obtained.The oxide stripe lasers with a stripe width of 20μm are fabricated.Single-mode oscillation isachieved at 1.293μm,and a high single-mode oscillation yield is also obtained.展开更多
Metal-organic framework(MOF) thin films are multilayer materials ranging from nanometers to micrometers in thickness,physically or chemically adhesive to a(functionalized) substrate and,in an ideal case,exhibiting low...Metal-organic framework(MOF) thin films are multilayer materials ranging from nanometers to micrometers in thickness,physically or chemically adhesive to a(functionalized) substrate and,in an ideal case,exhibiting low roughness and high homogeneity.Various innovative approaches have been developed for MOF thin film fabrication.Among these advanced materials,surface-attached metal-organic frameworks(SURMOFs) are an important class of MOF films.SURMOFs,fabricated in a step-by-step liquid phase epitaxial(LPE) fashion by alternating deposition of metal and organic linker precursors on a functionalized substrate,for example,thiolate-based self-assembled monolayers(SAMs),have already exhibited their utility in both research and potential applications.SURMOFs combine surface science and the chemistry of MOFs,possessing the following unique advantages that cannot be accessed through other methods:(i) precisely controlling thickness,roughness and homogeneity as well as growth orientation,(ii) studying of MOF growth mechanism,(iii) modifying/tailoring MOFs' structures during the SURMOF growth and thus creating customizable properties,and(iv) existing in the form of thin film/membrane for direct applications,for example,as sensors.This review discusses the oriented and crystalline SURMOFs fabricated by LPE approach,covering their preparation,growth mechanism,and characterization methodology as well as applications based upon the most newly updated knowledge.展开更多
Direct integration of high-mobility III-V compound semiconductors with existing Si-based complementary metal-oxide-semiconductor （CMOS） processing platforms presents the main challenge to increasing the CMOS perform...Direct integration of high-mobility III-V compound semiconductors with existing Si-based complementary metal-oxide-semiconductor （CMOS） processing platforms presents the main challenge to increasing the CMOS performance and the scaling trend. Silicon hetero-nanowires with integrated III-V segments are one of the most promising candidates for advanced nano-optoelectronics, as first demonstrated using molecular beam epitaxy techniques. Here we demonstrate a novel route for InAs/Si hybrid nanowire fabrication via millisecond range liquid-phase epitaxy regrowth using sequential ion beam implantation and flash-lamp annealing. We show that such highly mismatched systems can be monolithically integrated within a single nanowire. Optical and microstructural investigations confirm the high quality hetero-nanowire fabrication coupled with the formation of atomically sharp interfaces between Si and InAs segments. Such hybrid systems open new routes for future high-speed and multifunctional nanoelectronic devices on a single chip.展开更多
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFA0300801)the National Natural Science Foundation of China(Grant Nos.51702042,61734002,61571079,51572042,and 61471096)+1 种基金the International Science&Technology Cooperation Program of China(Grant No.2015DFR50870)the Sichuan Science and Technology Support Project,China(Grant Nos.2016GZ0250 and 2017JY0002)
文摘Liquid phase epitaxy （LPE） is a mature technology. Early experiments on single magnetic crystal films fabricated by LPE were focused mainly on thick films for microwave and magneto-optical devices. The LPE is an excellent way to make a thick film, low damping magnetic garnet film and high-quality magneto-optical material. Today, the principal challenge in the applied material is to create sub-micrometer devices by using modern photolithography technique. Until now the magnetic garnet films fabricated by LPE still show the best quality even on a nanoscale （about 100 nm）, which was considered to be impossible for LPE method.
基金provided by the National Natural Science Foundation of China (No. 60777022)the Program for Young Excellent Tal-ents in Tongji University
文摘InAsSb epilayers with a cutoff wavelength of 4.8 μm have been successfully grown on InAs substrates by one-step liquid phase epitaxy （LPE） technology. The epilayers were characterized by X-ray diffraction （XRD）, Fourier transform infrared （PTIR） transmittance measurements and scanning electron microscopy （SEM）. The influence of different growth conditions on the optical and structural properties of the materials was studied. The results revealed that the good crystalline quality, mirror smooth surface and flat interface of InAsSb epilayers were achieved. They benefited from optimized growth conditions, i.e., sufficient homogeneity of the growth melt and a very slow cooling rate.
文摘A novel horizontal push-pull multi-substrate epitaxy boat with three separate cells is introduced in this article, with which multi-substrate LPE processing is feasible in horizontal LPE furnace. The processes of LPE AlxGa1-x)As/ GaAs solar cells are studied and the efficiency of the solar cells achieved 19.8% （AMO, 25℃, 120 mW/cm2）.
文摘A modified liquid phase epitaxy apparatus for semiconductor materials was used to measure the solubility of GaAs in Bi.Two phase diagrams rich in Bi under H_2 and N_2 atmospheres were obtained according to the results of measurement.A new phenomenon,in which the parameter Q value(quantity of GaAs dissolved in Bi in fixed time/saturation quantitu,of GaAs in Bi)was different from each other at various temperatures and there existed a maxi- mum Q value at definite temperature,was observed.This phenomenon may be regarded as a common feature of a simple binary metallic system which has the phase diagram similar to that of Bi-GaAs.The difference observed from the dependence of Q values on temperature in both H_2 and N_2 atmospheres was discussed.
基金Supported by National Natural Science Foundation of Chinathe Trans-Century Training Porgramme Foundation for Talents of the State Education Commission.
文摘In this paper,the fabrication of 1.3μm InGaAsP/InP gain-coupled DFB lasers with lossgrating is reported for the first time.A technique of regrowth on corrugated surface usingLPE is developed.By using GaAs as the cover of thermal protection and controlling theamount of the super cooling,high quality epitxial layers on corrugated surface are obtained.The oxide stripe lasers with a stripe width of 20μm are fabricated.Single-mode oscillation isachieved at 1.293μm,and a high single-mode oscillation yield is also obtained.
基金the European Union for funding the research projects on MOF thin films (Priority Program 1362 of the DFG)SUR-MOFs(6th FP, NMP4-CT-2006-032109)
文摘Metal-organic framework(MOF) thin films are multilayer materials ranging from nanometers to micrometers in thickness,physically or chemically adhesive to a(functionalized) substrate and,in an ideal case,exhibiting low roughness and high homogeneity.Various innovative approaches have been developed for MOF thin film fabrication.Among these advanced materials,surface-attached metal-organic frameworks(SURMOFs) are an important class of MOF films.SURMOFs,fabricated in a step-by-step liquid phase epitaxial(LPE) fashion by alternating deposition of metal and organic linker precursors on a functionalized substrate,for example,thiolate-based self-assembled monolayers(SAMs),have already exhibited their utility in both research and potential applications.SURMOFs combine surface science and the chemistry of MOFs,possessing the following unique advantages that cannot be accessed through other methods:(i) precisely controlling thickness,roughness and homogeneity as well as growth orientation,(ii) studying of MOF growth mechanism,(iii) modifying/tailoring MOFs' structures during the SURMOF growth and thus creating customizable properties,and(iv) existing in the form of thin film/membrane for direct applications,for example,as sensors.This review discusses the oriented and crystalline SURMOFs fabricated by LPE approach,covering their preparation,growth mechanism,and characterization methodology as well as applications based upon the most newly updated knowledge.
文摘Direct integration of high-mobility III-V compound semiconductors with existing Si-based complementary metal-oxide-semiconductor （CMOS） processing platforms presents the main challenge to increasing the CMOS performance and the scaling trend. Silicon hetero-nanowires with integrated III-V segments are one of the most promising candidates for advanced nano-optoelectronics, as first demonstrated using molecular beam epitaxy techniques. Here we demonstrate a novel route for InAs/Si hybrid nanowire fabrication via millisecond range liquid-phase epitaxy regrowth using sequential ion beam implantation and flash-lamp annealing. We show that such highly mismatched systems can be monolithically integrated within a single nanowire. Optical and microstructural investigations confirm the high quality hetero-nanowire fabrication coupled with the formation of atomically sharp interfaces between Si and InAs segments. Such hybrid systems open new routes for future high-speed and multifunctional nanoelectronic devices on a single chip.
