High-performance liquid-phase catalytic purification of phosphine in tail gas using Pd(Ⅱ)/Cu(Ⅱ)composite

Pd/Cu liquid-phase composite was utilized as the catalyst in this study to remove PH_(3) at low temperatures.The anti-heterotoxicity of catalysts in the PH_(3) catalytic oxidation purification process was carefully explored and pioneered.The catalytic performance,thermodynamics,kinetics,and catalytic oxidation mechanism of Pd/Cu liquid-phase catalyst catalytic oxidation of PH_(3) were thoroughly investigated.The results showed that Pd/Cu has a superior catalytic effect on the removal of PH_(3) in the gas mixture under low temperature.With CO as the carrier gas,the removal efficiency of PH_(3) could be maintained at 100%for nearly 450 min,indicating that the Pd/Cu liquid phase catalyst has good resistance to heterotoxicity.According to the thermodynamic,kinetic,and related characterization results of the PH_(3) purification process,the kinetic region of the gas–liquid reaction of PH_(3) absorption by Pd/Cu solution was an interfacial reaction.Pd was the primary catalyst and Cu was the secondary catalyst,and the adsorption of PH_(3)was a primary reaction.PH_(3) was spontaneously oxidized to H_(3)PO_(4) in the Pd/Cu catalytic system during the removal process.Pd was regenerated by O_(2) and Cu,increasing the activity and stability of the Pd/Cu catalyst in the sustain and efficient purification of PH_(3) in tail gas.

Development of in situ characterization techniques in molecular beam epitaxy

Ex situ characterization techniques in molecular beam epitaxy(MBE)have inherent limitations,such as being prone to sample contamination and unstable surfaces during sample transfer from the MBE chamber.In recent years,the need for improved accuracy and reliability in measurement has driven the increasing adoption of in situ characterization techniques.These techniques,such as reflection high-energy electron diffraction,scanning tunneling microscopy,and X-ray photoelectron spectroscopy,allow direct observation of film growth processes in real time without exposing the sample to air,hence offering insights into the growth mechanisms of epitaxial films with controlled properties.By combining multiple in situ characterization techniques with MBE,researchers can better understand film growth processes,realizing novel materials with customized properties and extensive applications.This review aims to overview the benefits and achievements of in situ characterization techniques in MBE and their applications for material science research.In addition,through further analysis of these techniques regarding their challenges and potential solutions,particularly highlighting the assistance of machine learning to correlate in situ characterization with other material information,we hope to provide a guideline for future efforts in the development of novel monitoring and control schemes for MBE growth processes with improved material properties.

Metal-modulated epitaxy of Mg-doped Al_(0.80)In_(0.20)N-based layer for application as the electron blocking layer in deep ultraviolet light-emitting diodes

This work reports the growth and characterization of p-AlInN layers doped with Mg by plasma-assisted molecular beam epitaxy(PAMBE).AlInN was grown with an Al molar fraction of 0.80 by metal-modulated epitaxy(MME)with a thickness of 180 nm on Si(111)substrates using AlN as buffer layers.Low substrate temperatures were used to enhance the incorporation of indium atoms into the alloy without clustering,as confirmed by X-ray diffraction(XRD).Cathodoluminescence measurements revealed ultraviolet(UV)range emissions.Meanwhile,Hall effect measurements indicated a maximum hole mobility of 146 cm^(2)/(V∙s),corresponding to a free hole concentration of 1.23×10^(19)cm^(−3).The samples were analyzed by X-ray photoelectron spectroscopy(XPS)estimating the alloy composition and extracting the Fermi level by valence band analysis.Mg-doped AlInN layers were studied for use as the electron-blocking layer(EBL)in LED structures.We varied the Al composition in the EBL from 0.84 to 0.96 molar fraction to assess its theoretical effects on electroluminescence,carrier concentration,and electric field,using SILVACO Atlas.The results from this study highlight the importance and capability of producing high-quality Mg-doped p-AlInN layers through PAMBE.Our simulations suggest that an Al content of 0.86 is optimal for achieving desired outcomes in electroluminescence,carrier concentration,and electric field.

Electrical properties and structural optimization of GaN/InGaN/GaN tunnel junctions grown by molecular beam epitaxy

The InGaN films and GaN/InGaN/GaN tunnel junctions(TJs)were grown on GaN templates with plasma-assisted molecular beam epitaxy.As the In content increases,the quality of InGaN films grown on GaN templates decreases and the surface roughness of the samples increases.V-pits and trench defects were not found in the AFM images.p++-GaN/InGaN/n++-GaN TJs were investigated for various In content,InGaN thicknesses and doping concentration in the InGaN insert layer.The InGaN insert layer can promote good interband tunneling in GaN/InGaN/GaN TJ and significantly reduce operating voltage when doping is sufficiently high.The current density increases with increasing In content for the 3 nm InGaN insert layer,which is achieved by reducing the depletion zone width and the height of the potential barrier.At a forward current density of 500 A/cm^(2),the measured voltage was 4.31 V and the differential resistance was measured to be 3.75×10^(−3)Ω·cm^(2)for the device with a 3 nm p++-In_(0.35)Ga_(0.65)N insert layer.When the thickness of the In_(0.35)Ga_(0.65)N layer is closer to the“balanced”thickness,the TJ current density is higher.If the thickness is too high or too low,the width of the depletion zone will increase and the current density will decrease.The undoped InGaN layer has a better performance than n-type doping in the TJ.Polarization-engineered tunnel junctions can enhance the functionality and performance of electronic and optoelectronic devices.

Liquid-phase epitaxy of metal organic framework thin films

Metal-organic framework(MOF) thin films are multilayer materials ranging from nanometers to micrometers in thickness,physically or chemically adhesive to a(functionalized) substrate and,in an ideal case,exhibiting low roughness and high homogeneity.Various innovative approaches have been developed for MOF thin film fabrication.Among these advanced materials,surface-attached metal-organic frameworks(SURMOFs) are an important class of MOF films.SURMOFs,fabricated in a step-by-step liquid phase epitaxial(LPE) fashion by alternating deposition of metal and organic linker precursors on a functionalized substrate,for example,thiolate-based self-assembled monolayers(SAMs),have already exhibited their utility in both research and potential applications.SURMOFs combine surface science and the chemistry of MOFs,possessing the following unique advantages that cannot be accessed through other methods:(i) precisely controlling thickness,roughness and homogeneity as well as growth orientation,(ii) studying of MOF growth mechanism,(iii) modifying/tailoring MOFs' structures during the SURMOF growth and thus creating customizable properties,and(iv) existing in the form of thin film/membrane for direct applications,for example,as sensors.This review discusses the oriented and crystalline SURMOFs fabricated by LPE approach,covering their preparation,growth mechanism,and characterization methodology as well as applications based upon the most newly updated knowledge.

Enhanced thermal emission from metal-free,fully epitaxial structures with epsilon-near-zero InAs layers

We introduce a novel method to create mid-infrared(MIR)thermal emitters using fully epitaxial,metal-free structures.Through the strategic use of epsilon-near-zero(ENZ)thin films in InAs layers,we achieve a narrow-band,wide-angle,and p-polarized thermal emission spectra.This approach,employing molecular beam epitaxy,circumvents the complexities associated with current layered structures and yields temperature-resistant emission wavelengths.Our findings contribute a promising route towards simpler,more efficient MIR optoelectronic devices.

Embedded high-quality ternary GaAs_(1−x)Sb_(x) quantum dots in GaAs nanowires by molecular-beam epitaxy

Semiconductor quantum dots are promising candidates for preparing high-performance single photon sources.A basic requirement for this application is realizing the controlled growth of high-quality semiconductor quantum dots.Here,we report the growth of embedded GaAs_(1−x)Sb_(x) quantum dots in GaAs nanowires by molecular-beam epitaxy.It is found that the size of the GaAs_(1−x)Sb_(x) quantum dot can be well-defined by the GaAs nanowire.Energy dispersive spectroscopy analyses show that the antimony content x can be up to 0.36 by tuning the growth temperature.All GaAs_(1−x)Sb_(x) quantum dots exhibit a pure zinc-blende phase.In addition,we have developed a new technology to grow GaAs passivation layers on the sidewalls of the GaAs_(1−x)Sb_(x) quantum dots.Different from the traditional growth process of the passivation layer,GaAs passivation layers can be grown simultaneously with the growth of the embedded GaAs_(1−x)Sb_(x) quantum dots.The spontaneous GaAs passivation layer shows a pure zinc-blende phase due to the strict epitaxial relationship between the quantum dot and the passivation layer.The successful fabrication of embedded high-quality GaAs_(1−x)Sb_(x) quantum dots lays the foundation for the realization of GaAs_(1−x)Sb_(x)-based single photon sources.

Kinetics of Liquid-Phase Hydrogenation of Toluene Catalyzed by Hydrogen Storage Alloy MlNi_5

The kinetics of liquid-phase hydrogenation of toluene catalyzed by MlNi_5 was studied by investigating the influences of the reaction temperature and pressure on the mass transfer-reaction processes inside the slurry. The results show that the reaction rate accelerates when the reaction temperature increases, and reaches its maximum at about 490 K, but if temperature is higher than 510 K, the reaction rate decreases rapidly. The whole reaction process is controlled by the reaction at the surface of the catalyst particles. The mass transfer resistance at gas-liquid interface and that from the bulk liquid phase to the surface of the catalyst particle can be neglected. The apparent reaction rate is zero order for toluene concentration and first order for hydrogen concentration in the liquid phase. The kinetic model is obtained. The kinetic model fits the experimental data very well. The apparent activation energy of the hydrogen absorption reaction of MlNi_5-toluene slurry system is 41.01 kJ·mol^(-1).

Studies on the structure and catalytic performance of Cu-Zn-Al catalyst prepared by liquid-phase preparation technology under different heat treatment atmosphere

Cu-Zn-Al slurry catalysts were prepared using a complete liquid-phase preparation technology under different heat treatment atmospheres.The catalysts were characterized using X-ray diffraction,X-ray photoelectron spectroscope,and N2 adsorption-desorption.Their application in the single-step synthesis of dimethyl ether from syngas was also investigated.The results indicate that the type of heat treatment atmosphere has an influence on the Cu species and the Cu0/Cu＋ ratio on the catalyst surface.Moreover,the final Cu/Zn ratio on the catalyst surface is mainly dependent on the composition and reaction environment of the catalyst and less on the type of heat treatment atmosphere.The prepared catalysts can suppress sintering of active sites at high temperatures,and the type of heat treatment atmosphere mainly affects the capability of the catalyst for methanol synthesis.The catalysts perform best using N2 as the heat treatment atmosphere.

On the liquid-phase technology of carbon fiber/aluminum matrix composites

The main problems with the liquid-phase technology of carbon fiber/aluminum matrix composites include poor wetting of the fiber with liquid aluminum and formation of aluminum carbide on the fibers’surface.This paper aims to solve these problems.The theoretical and experimental dependence of porosity on the applied pressure were determined.The possibility of obtaining a carbon fiber/aluminum matrix composite wire with a strength value of about 1500 MPa was shown.The correlation among the strength of the carbon fiber reinforced aluminum matrix composite,the fracture surface,and the degradation of the carbon fiber surface was discussed.

Interfacial reactions and diffusion path in partial transient liquid-phase bonding of Si_3N_4/Ti/Ni/Ti/Si_3N_4

The interfacial reactions in partial transient liquid-phase bonding of Si3N4 ceramics with Ti/Ni/Ti interlayers were studied by means of scanning electron microscopy （SEM）, energy dispersive spectrometry （EDS） and X-ray diffractometry （XRD）. It was shown that the interfacial structure of Si3N4/TiN/Ti5Si3+Ti5Si4 + Ni3Si/ （NiTi ） /Ni3Ti/ Ni was formed after bonding. The activation energies for TiN layer and the mixed reaction layer of Ti5Si3 + Ti5Si4 + Ni3Si are 546. 8 kJ/mol and 543. 9 kJ/mol, respectively. The formation and transition processes of interface layer sequence in the joint were clarified by diffusion path. An important characteristic, which is different from the conventional brazing and soid-state diffusion bonding, has been found, i. e., during the partial transient liquid-phase bonding, not only the reaction layers which have formed grow, but also the diffusion path in the subsequent reaction changes because of the remarkable variation of the concentration on the metal side.

Poly(ethylene glycol)-supported Liquid-phase Parallel Synthesis of Di(aryloxyacetyl)thiosemicarbazides

An efficient poly(ethylene glycol) (PEG)-supported liquid-phase parallel approach to di(aryloxyacetyl)thiosemicarbazides is described. PEG-bound phenol reacted with chloroacetic acid to afford PEG-bound phenyloxyacetic acid, which was readily converted into corresponding phenyloxyacetyl chloride. Subsequent nucleophilic substitution with ammonium thiocyanate followed by addition of aryloxyacetic acid hydrazides gave PEG-bound di(aryloxyacetyl)thiosemi-carbazides, which were easily cleaved to give the resulting library of 1-aryloxyacetyl-4-(4'-methoxylcarbonylphenyloxyacetyl)thiosemicarbazides in good to high yield and high purity.

Epitaxial Properties of Co-Doped ZnO Thin Films Grown by Plasma Assisted Molecular Beam Epitaxy

High quality Co-doped ZnO thin films are grown on single crystalline Al2O3（0001） and ZnO（0001） substrates by oxygen plasma assisted molecular beam epitaxy at a relatively lower substrate temperature of 450℃. The epitaxial conditions are examined with in-situ reflection high energy electron diffraction （RHEED） and ex-situ high resolution x-ray diffraction （HRXRD）. The epitaxial thin films are single crystal at film thickness smaller than 500nm and nominal concentration of Co dopant up to 20%. It is indicated that the Co cation is incorporated into the ZnO matrix as Co^2＋ substituting Zn^2＋ ions. Atomic force microscopy shows smooth surfaces with rms roughness of 1.9 nm. Room-temperature magnetization measurements reveal that the Co-doped ZnO thin films are ferromagnetic with Curie temperatures Tc above room temperature.

CeO_2[100]∥MgO[100]in-plane Epitaxy for Bi-epitaxial Grain Boundary Junctions

In order to obtain bi epitaxial 45° grain boundary YBa 2Cu 3O 7 (YBCO) junctions, the in plane epitaxy of CeO 2 films on both MgO films and SrTiO 3 substrates was studied. Using magnetron sputtering technique and decreasing the substrate temperature, 100% CeO 2∥MgO in plane orientation for bi epitaxial grain boundary junction can be obtained.

Epitaxially Grown Ru Clusters-Nickel Nitride Heterostructure Advances Water Electrolysis Kinetics in Alkaline and Seawater Media

The epitaxial heterostructure can be rationally designed based on the in situ growth of two compatible phases with lattice similarity,in which the modulated electronic states and tuned adsorption behaviors are conducive to the enhancement of electrocatalytic activity.Herein,theoretical simulations first disclose the charge transfer trend and reinforced inherent electron conduction around the epitaxial heterointerface between Ru clusters and Ni_(3)N substrate(cRu-Ni_(3)N),thus leading to the optimized adsorption behaviors and reduced activation energy barriers.Subsequently,the defectrich nanosheets with the epitaxially grown cRu-Ni_(3)N heterointerface are successfully constructed.Impressively,by virtue of the superiority of intrinsic activity and reaction kinetics,such unique epitaxial heterostructure exhibits remarkable bifunctional catalytic activity toward electrocatalytic OER(226 mV@20 mA cm^(−2))and HER(32 mV@10 mA cm^(−2))in alkaline media.Furthermore,it also shows great application prospect in alkaline freshwater and seawater splitting,as well as solar-to-hydrogen integrated system.This work could provide beneficial enlightenment for the establishment of advanced electrocatalysts with epitaxial heterointerfaces.

Superconductivity in epitaxially grown LaVO_(3)/KTaO_(3)(111)heterostructures

Complex oxide heterointerfaces can host a rich of emergent phenomena,and epitaxial growth is usually at the heart of forming these interfaces.Recently,a strong crystalline-orientation-dependent two-dimensional superconductivity was discovered at interfaces between KTaO_(3)single-crystal substrates and films of other oxides.Unexpectedly,rare of these oxide films was epitaxially grown.Here,we report the existence of superconductivity in epitaxially grown LaVO_(3)/KTaO_(3)(111)heterostructures,with a superconducting transition temperature of~0.5 K.Meanwhile,no superconductivity was detected in the(001)-and(110)-orientated LaVO_(3)/KTaO_(3)heterostructures down to 50 mK.Moreover,we find that for the LaVO_(3)/KTaO_(3)(111)interfaces to be conducting,an oxygen-deficient growth environment and a minimum LaVO_(3)thickness of~0.8 nm(~2 unit cells)are needed.

Rapid epitaxy of 2-inch and high-quality α-Ga_(2)O_(3) films by mist-CVD method

High thickness uniformity and large-scale films of α-Ga_(2)O_(3) are crucial factors for the development of power devices.In this work, a high-quality 2-inch α-Ga_(2)O_(3) epitaxial film on c-plane sapphire substrates was prepared by the mist-CVD method.The growth rate and phase control mechanisms were systematically investigated. The growth rate of the α-Ga_(2)O_(3) films was limited by the evaporation of the microdroplets containing gallium acetylacetonate. By adjusting the substrate position(z) from 80 to 50 mm, the growth rate was increased from 307 nm/h to 1.45 μm/h when the growth temperature was fixed at 520 °C.When the growth temperature exceeded 560 °C, ε-Ga_(2)O_(3) was observed to form at the edges of 2-inch sapphire substrate.Phase control was achieved by adjusting the growth temperature. When the growth temperature was 540 °C and the substrate position was 50 mm, the full-width at half maximum(FWHM) of the rocking curves for the(0006) and(10-14) planes were 0.023° and 1.17°. The screw and edge dislocations were 2.3 × 10~6 and 3.9 × 10~(10)cm~(-2), respectively. Furthermore, the bandgaps and optical transmittance of α-Ga_(2)O_(3) films grown under different conditions were characterized utilizing UV-visible and near-IR scanning spectra.

Review of a direct epitaxial approach to achieving micro-LEDs

There is a significantly increasing demand of developing augmented reality and virtual reality(AR and VR) devices,where micro-LEDs(μLEDs) with a dimension of ≤ 5 μm are the key elements. Typically, μLEDs are fabricated by dry-etching technologies, unavoidably leading to a severe degradation in optical performance as a result of dry-etching induced damages. This becomes a particularly severe issue when the dimension of LEDs is ≤ 10 μm. In order to address the fundamental challenge, the Sheffield team has proposed and then developed a direct epitaxial approach to achievingμLEDs, where the dry-etching technologies for the formation of μLED mesas are not needed anymore. This paper provides a review on this technology and then demonstrates a number of monolithically integrated devices on a single chip using this technology.

Liquid-phase and solid-phase microwave irradiations for reduction of graphite oxide

In this paper, two microwave irradiation methods：（i） liquid-phase microwave irradiation（MWI） reduction of graphite oxide suspension dissolved in de-ionized water and N, N-dimethylformamide, respectively, and（ii） solid-phase MWI reduction of graphite oxide powder have been successfully carried out to reduce graphite oxide. The reduced graphene oxide products are thoroughly characterized by scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, Fourier transform infrared spectral analysis, Raman spectroscopy, UV-Vis absorption spectral analysis,and four-point probe conductivity measurements. The results show that both methods can efficiently remove the oxygencontaining functional groups attached to the graphite layers, though the solid-phase MWI reduction method can obtain far more efficiently a higher quality-reduced graphene oxide with fewer defects. The I（D）/I（G） ratio of the solid-phase MWI sample is as low as 0.46, which is only half of that of the liquid-phase MWI samples. The electrical conductivity of the reduced graphene oxide by the solid method reaches 747.9 S/m, which is about 25 times higher than that made by the liquid-phase method.