Fast source mask co-optimization method for high-NA EUV lithography

Extreme ultraviolet(EUV)lithography with high numerical aperture(NA)is a future technology to manufacture the integrated circuit in sub-nanometer dimension.Meanwhile,source mask co-optimization(SMO)is an extensively used approach for advanced lithography process beyond 28 nm technology node.This work proposes a novel SMO method to improve the image fidelity of high-NA EUV lithography system.A fast high-NA EUV lithography imaging model is established first,which includes the effects of mask three-dimensional structure and anamorphic magnification.Then,this paper develops an efficient SMO method that combines the gradient-based mask optimization algorithm and the compressivesensing-based source optimization algorithm.A mask rule check(MRC)process is further proposed to simplify the optimized mask pattern.Results illustrate that the proposed SMO method can significantly reduce the lithography patterning error,and maintain high computational efficiency.

Fabrication of a 256-bits organic memory by soft x-ray lithography

This paper reports a procedure of soft x-ray lithography for the fabrication of an organic crossbar structure. Electron beam lithography is employed to fabricate the mask for soft x-ray lithography, with direct writing technology to the lithograph positive resist and polymethyl methacrylate on the polyimide film. Then Au is electroplated on the polyimide film. Hard contact mode exposure is used in x-ray lithography to transfer the graph from the mask to the wafer. The 256-bits organic memory is achieved with the critical dimension of 250 nm.

Scanning probe lithography on calixarene towards single-digit nanometer fabrication

Cost effective patterning based on scanning probe nanolithography(SPL)has the potential for electronic and optical nano-device manufacturing and other nanotechnological applications.One of the fundamental advantages of SPL is its capability for patterning and imaging employing the same probe.This is achieved with self-sensing and self-actuating cantilevers,also known as‘active'cantilevers.Here we used active cantilevers to demonstrate a novel path towards single digit nanoscale patterning by employing a low energy(<100 eV)electron exposure to thin films of molecular resist.By tuning the electron energies to the lithographically relevant chemical resist transformations,the interaction volumes can be highly localized.This method allows for greater control over spatially confined lithography and enhances sensitivity.We found that at low electron energies,the exposure in ambient conditions required approximately 10 electrons per single calixarene molecule to induce a crosslinking event.The sensitivity was 80-times greater than a classical electron beam exposure at 30 keV.By operating the electro-exposure process in ambient conditions a novel lithographic reaction scheme based on a direct ablation of resist material(positive tone)is presented.

Study of Inverse Lithography Approaches based on Deep Learning

Computational lithography(CL)has become an indispensable technology to improve imaging resolution and fidelity of deep sub-wavelength lithography.The state-of-the-art CL approaches are capable of optimizing pixel-based mask patterns to effectively improve the degrees of optimization freedom.However,as the growth of data volume of photomask layouts,computational complexity has become a challenging problem that prohibits the applications of advanced CL algorithms.In the past,a number of innovative methods have been developed to improve the computational efficiency of CL algorithms,such as machine learning and deep learning methods.Based on the brief introduction of optical lithography,this paper reviews some recent advances of fast CL approaches based on deep learning.At the end,this paper briefly discusses some potential developments in future work.

Electro-Optically Switchable Optical True Delay Lines of Meter-Scale Lengths Fabricated on Lithium Niobate on Insulator Using Photolithography Assisted Chemo-Mechanical Etching

Optical true delay lines(OTDLs)of low propagation losses,small footprints and high tuning speeds and efficiencies are of critical importance for various photonic applications.Here,we report fabrication of electro-optically switchable OTDLs on lithium niobate on insulator using photolithography assisted chemo-mechanical etching.Our device consists of several low-loss optical waveguides of different lengths which are consecutively connected by electro-optical switches to generate different amounts of time delay.The fabricated OTLDs show an ultra-low propagation loss of^0.03dB/cm for waveguide lengths well above 100 cm.

2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography

We report a type-I Ga Sb-based laterally coupled distributed-feedback（LC-DFB） laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB laser with a cavity of 1500 μm achieves single longitudinal mode continuous-wave operation at 20℃ with side mode suppression ratio（SMSR） as high as 24 dB.The maximum single mode continuous-wave output power is about 10 mW at room temperature（uncoated facet）. A low threshold current density of 230 A/cm^2 is achieved with differential quantum efficiency estimated to be 93 mW/A. The laser shows a good wavelength stability against drive current and working temperature.

The theoretic analysis of maskless surface plasmon resonant interference lithography by prism coupling

The use of an attenuated total reflection-coupling mode of prism coated with metal film to excite the interference of the surface plasmon polaritons （SPPs） was proposed for periodic patterning with a resolution of subwavelength scale. High intensity of electric field can be obtained because of the coupling between SPPs and evanescence under a resonance condition, which can reduce exposure time and improve contrast. In this paper, several critical parameters for maskless surface plasmon resonant lithography are described, and the preliminary simulation based on a finite difference timedomain technique agrees well with the theoretical analysis, which demonstrates this scheme and provides the theoretical basis for further experiments.

Nanofabrication of 50 nm zone plates through e-beam lithography with local proximity effect correction for x-ray imaging

High resolution Fresnel zone plates for nanoscale three-dimensional imaging of materials by both soft and hard x-rays are increasingly needed by the broad applications in nanoscience and nanotechnology.When the outmost zone-width is shrinking down to 50 nm or even below,patterning the zone plates with high aspect ratio by electron beam lithography still remains a challenge because of the proximity effect.The uneven charge distribution in the exposed resist is still frequently observed even after standard proximity effect correction(PEC),because of the large variety in the line width.This work develops a new strategy,nicknamed as local proximity effect correction(LPEC),efficiently modifying the deposited energy over the whole zone plate on the top of proximity effect correction.By this way,50 nm zone plates with the aspect ratio from 4:1 up to 15:1 and the duty cycle close to 0.5 have been fabricated.Their imaging capability in soft(1.3 keV)and hard(9 keV)x-ray,respectively,has been demonstrated in Shanghai Synchrotron Radiation Facility(SSRF)with the resolution of 50 nm.The local proximity effect correction developed in this work should also be generally significant for the generation of zone plates with high resolutions beyond 50 nm.

Nanoimprint Lithography:A Processing Technique for Nanofabrication Advancement

Nanoimprint lithography(NIL) is an emerging micro/nano-patterning technique,which is a high-resolution,high-throughput and yet simple fabrication process.According to International Technology Roadmap for Semiconductor(ITRS),NIL has emerged as the next generation lithography candidate for the22 nm and 16 nm technological nodes.In this paper,we present an overview of nanoimprint lithography.The classfication,research focus,critical issues,and the future of nanoimprint lithography are intensively elaborated.A pattern as small as 2.4 nm has been demonstrated.Full-wafer nanoimprint lithography has been completed on a 12-inch wafer.Recently,12.5 nm pattern resolution through soft molecular scale nanoimprint lithography has been achieved by EV Group,a leading nanoimprint lithography technology supplier.

Current Status of Extreme Ultraviolet Lithography in Japan

ASET, Association of Super-advanced Electronics Technologies, has been taking the initiative in developing EUV lithography technology in Japan for the past three years. The aspherical mirror metrology using a visible light point diffraction interferometer (PDI), the wave front measurement using an at-wavelength PDI, and an at wavelength reflectometry for multilayers, various imaging simulations, multilayer coatings for the mask, the development of absorber materials for mask patterning, the mask substrate cleaning technique, and various photoresist processes have been developed. The visible light PDI employs a 0.5-μm pinhole as an aperture to generate an ideal spherical wave front and can measure a 0.3-N A mirror maximum. The at-wavelength PDI can measure the wave front error of the projection optics. The at-wavelength reflectometer can measure the reflectivity of multilayers and the round-robin test is taking place among ASET, the ALS in Lawrence Berkeley, and BESSY in Germany. The mask cleaning technique employs a supersonic hydro-cleaning technique. We have confirmed that the single layer resists can be used for EUV lithography.

Structured mirror array for two-dimensional collimation of a chromium beam in atom lithography

Direct-write atom lithography,one of the potential nanofabrication techniques,is restricted by some difficulties in producing optical masks for the deposition of complex structures.In order to make further progress,a structured mirror array is developed to transversely collimate the chromium atomic beam in two dimensions.The best collimation is obtained when the laser red detunes by natural line-width of transition 7S3 → 7P40 of the chromium atom.The collimation ratio is 0.45 vertically（in x axis）,and it is 0.55 horizontally（in y axis）.The theoretical model is also simulated,and success of our structured mirror array is achieved.

Development of Debris-free Laser Plasma Sources for EUV Lithography in CIOMP

We have been developing debris-free laser plasma sources for EUV lithography since 1996. Two types of debris-free sources, such as cryogenic target and gas-puff target laser plasma sources, were designed and built up in CIOMP. EUV radiation spectra of the sources with a variety of targets have been obtained by different ways.

Current Status of EUV Lithography

According to the SIA roadmap, by the year of 2006, minimum feature size of 70 nm on wafer is required. Research in U.S., Japan and Europe is aimed at developing and demonstrating an EUVL tool for critical feature size of 70 nm and below. In Japan, Himeji institute of technology (HIT) has developed an EUVL laboratory tool , which has a practical exposure field of 30mm×28mm. The alignment and assembly of three aspherical mirror optics were completed. A final wave front error of less than 3 nm was achieved. Using this system, exposure experiments are performed using synchrotron facility of New Subaru. Up to now, 56nm patterns have been replicated in the exposure field of 10mm×1mm. And using scanning stages, 100 nm L&S patterns have been replicated in the field of 10mm×5 mm.

Synchrotron Radiation Lithography and MEMS Technique at NSRL

Two beamlines and stations for soft X-ray lithography and hard X-ray lithography at NSRL are presented. Synchrotron radiation lithography (SRL) and mask techniques are developed, and the micro-electro-mechanical systems (MEMS) techniques are also investigated at NSRL. In this paper, some results based on SRL and MEMS techniques are reported, and sub-micron and high aspect ratio microstructures are given. Some micro-devices, such as microreactors are fabricated at NSRL.

Fabrication of high temperature grating on thermal barrier coatings based on solute-solvent separation soft lithography

In this study, an etched-SiO-film grating fabrication technique based on solute-solvent separation soft lithography is developed. By using this new technique, high temperature grating with frequency of 600 lines/mm is successfully fabricated on the surface of thermal barrier coatings(TBCs). During the fabrication process, the microstructure and chemical compositions of ceramic coating before and after polishing is analyzed with a digital microscope and the energy dispersive X-ray spectroscope(EDS) in scanning electron microscope(SEM). And then the grating on TBCs is heated at the temperature ranging from 300℃ to 1000℃ for examining the high temperature resistance. In the practical application, the displacement and strain field around the crack on the ceramic surface are investigated with geometry phase analysis(GPA). The successful results verify that the etched-SiO-film grating has a good oxidation resistance and can be applied to high temperature deformation measurement of TBCs.

Confinement-induced nanocrystal alignment of conjugated polymer by the soft-stamped nanoimprint lithography

Soft-stamped nanoimprint lithography（NIL） is considered as one of the most effective processes of nanoscale patterning because of its low cost and high throughput. In this work, this method is used to emboss the poly（9, 9-dioctylfluorene）film. By reducing the linewidth of the nanogratings on the stamp, the orientations of nanocrystals are confined along the grating vector in the nanoimprint process, where the confinement linewidth is comparable to the geometrical size of the nanocrystal. When the linewidth is about 400 nm, the poly（9, 9-dioctylfluorene）（PFO） nanocrystals could be orderly arranged in the nanogratings, so that both pattern transfer and well-aligned nanocrystal arrangement could be achieved in a single step by the soft-stamped NIL. The relevant mechanism of the nanocrystalline alignment in these nanogratings is fully discussed. The modulation of nanocrystal alignment is of benefit to the charge mobilities and other performances of PFO-based devices for the future applications.

Fabrication of 4-Inch Nano Patterned Wafer with High Uniformity by Laser Interference Lithography

We report the fabrication of 4-inch nano patterned wafer by two-beam laser interference lithography and analyze the uniformity in detail. The profile of the dots array with a period of 800 nm divided into five regions is characterized by a scanning electron microscope. The average size in each region ranges from 270 nm to 320 nm,and the deviation is almost 4%, which is approaching the applicable value of 3% in the industrial process. We simulate the two-beam laser interference lithography system with MATLAB software and then calculate the distribution of light intensity around the 4 inch area. The experimental data fit very well with the calculated results. Analysis of the experimental data and calculated data indicates that laser beam quality and space filter play important roles in achieving a periodical nanoscale pattern with high uniformity and large area. There is the potential to obtain more practical applications.

A Multiple Phase-Shifted Distributed Feedback(DFB)Laser Fabricated by Nanoimprint Lithography

Multiple phase-shifted(MPS)diffraction grating is an effective way proposed to overcome the spatial hole burning(SHB)effect in a distributed feedback(DFB)laser.We present two symmetric λ/8 phase-shifted DFB lasers by using nanoimprint lithography(NIL).The threshold current of a typical laser is less than 15 mA.The side mode suppression ratio(SMSR)is still above 42 dB even at 100 mA current injection.To show the versatility of NIL,eight different wavelength MPS-DFB lasers on this single chip are also demonstrated.Our results prove that NIL is a promising tool for fabricating high performance complex grating DFB lasers.

Theoretical Explanation and Improvement to the Flare Model of Lithography Based on the Kirk Test

The Kirk test has good precision for measuring stray light in optical lithography and is the usual method of measuring stray light.However,Kirk did not provide a theoretical explanation to his simulation model.We attempt to give Kirk's model a kind of theoretical explanation and a little improvement based on the model of point spread function of scattering and the theory of statistical optics.It is indicated by simulation that the improved model fits Kirk's measurement data better.

Fabrication of superconducting NbN meander nanowires by nano-imprint lithography

Superconducting nanowire single photon detector （SNSPD）, as a new type of superconducting single photon detector （SPD）, has a broad application prospect in quantum communication and other fields. In order to prepare SNSPD with high performance, it is necessary to fabricate a large area of uniform meander nanowires, which is the core of the SNSPD. In this paper, we demonstrate a process of patterning ultra-thin NbN films into meander-type nanowires by using the nano- imprint technology. In this process, a combination of hot embossing nano-imprint lithography （HE-NIL） and ultraviolet nano-imprint lithography （UV-NIL） is used to transfer the meander nanowire structure from the NIL Si hard mold to the NbN film. We have successfully obtained a NbN nanowire device with uniform line width. The critical temperature （Tc） of the superconducting NbN meander nanowires is about 5 K and the critical current （lc） is about 3.5 μA at 2.5 K.