Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors

We present a study on the single event transient （SET） induced by a pulsed laser in different silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） with the structure of local oxidation of silicon （LOCOS） and deep trench isolation （DTI）. The experimental results are discussed in detail and it is demonstrated that a SiGe HBT with the structure of LOCOS is more sensitive than the DTI SiGe HBT in the SET. Because of the limitation of the DTI structure, the charge collection of diffusion in the DTI SiGe HBT is less than that of the LOCOS SiGe HBT. The SET sensitive area of the LOCOS SiGe HBT is located in the eollector-substrate （C/S） junction, while the sensitive area of the DTI SiGe HBT is located near to the collector electrodes.

Effect of La_2O_3 on microstructure and high-temperature wear property of hot-press sintering FeAl intermetallic compound

FeAl intermetallic compound with different contents of rare earth oxide La2O3 addition was prepared by hot pressing the mechanically alloyed powders.Effect of La2O3 on microstructure and high-temperature wear property of the sintered FeAl samples was investigated in this paper.The results showed that 1 wt.% La2O3 addition could refine the microstructure and increase the density of the FeAl intermetallic compound,and correspondingly improved the high-temperature wear resistance.SEM and EDS analyses of the wo...

High-resolution characterization of hexagonal boron nitride coatings exposed to aqueous and air oxidative environments

Hexagonal boron nitride （h-BN） is believed to offer better passivation to metallic surfaces than graphene owing to its insulating nature, which facilitates blocking the flow of electrons, thereby preventing the occurrence of galvanic reactions. Nevertheless, this may not be the case when an h-BN-protected material is exposed to aqueous environments. In this work, we analyzed the stability of mono and multilayer h-BN stacks exposed to H202 and atmospheric conditions. Our experiments revealed that monolayer h-BN is as inefficient as graphene as a protective coating when exposed to H202. Multilayer h-BN offered a good degree of protection. Monolayer h-BN was found to be ineffective in an air atmosphere as well. Even a 10-15 layers-thick h-BN stack could not completely protect the surface of the metal under consideration. By combining Auger electron spectroscopy and secondary ion mass spectrometry techniques, we observed that oxygen could diffuse through the grain boundaries of the h-BN stack to reach the metallic substrate. Fortunately, because of the diffusive nature of the process, the oxidized area did not increase with time once a saturated state was reached. This makes multflayer （not monolayer） h-BN a suitable long-term oxidation barrier. Oxygen infiltration could not be observed by X-ray photoelectron spectroscopy. This technique cannot assess the chemical composition of the deeper layers of a material. Hence, the previous reports, which relied on XPS to analyze the passivating properties of h-BN and graphene, may have ignored some important subsurface phenomena. The results obtained in this study provide new insights into the passivating properties of mono and multilayer h-BN in aqueous media and the degradation kinetics of h-BN-coated metals exposed to an air environment.

Electrical and mechanical performance of graphene sheets exposed to oxidative environments

Graphene coatings have been shown to protect the underlying material from oxidation when exposed to different media. However, the passivating properties of graphene in air at room temperature, which corresponds to the operating conditions of many electronic devices, still remain undear. In this work, we analyze the oxidation kinetics of graphene/Cu samples in air at room temperature for long periods of time （from I day to 113 days） using scanning electron microscopy, conductive atomic force microscopy and Auger electron microscop3~ and we compare the results with those obtained for similar samples treated in H202. We observe that unlike the graphene sheets exposed to H202, in which the accumulation of oxygen at the graphene domain boundaries evolves in a very controlled and progressive way, the local oxidation of graphene in air happens in a disordered manner. In both cases the oxide hillocks formed at the graphene domain boundaries can propagate to the domains until reaching a limiting width and height. Our results demonstrate that the local oxidation of the underlying material along the domain boundaries can dramatically decrease the roughness, conductivity, mechanical resistance and frictional characteristics of the graphene sheet, which reduces the performance of the whole device.

A novel structure for improving the SEGR of a VDMOS

The mechanism of single-event gate-rupture in an N-channel VDMOS in a space radiation environment was analyzed. Based on the mechanism, a novel structure of VDMOS for improving single-event gate-rupture is proposed, and the structure is simulated and it is demonstrated that it can improve a VDMOS SEGR threshold voltage by 120%. With this structure, the specific on-resistance value of a VDMOS is reduced by 15.5% as the breakdown voltage almost maintains the same value. As only one mask added, which is local oxidation of silicon instead of an active processing area, the new structure VDMOS it is easily fabricated. The novel structure can be widely used in high-voltage VDMOS in a space radiation environment.

A 1,8-naphthalimide-derived turn-on fluorescent probe for imaging lysosomal nitric oxide in living cells

Nitric oxide has played an important role in many physiological and pathological processes as a kind of important gas signal molecules. In this work, a new fluorescent probe LysoNO-Naph for detecting NO in lysosomes based on 1,8-naphthalimide was reported. LysoNO-Naph has sub-groups of o-phenylene- diamine as a NO reaction site and 4-（2-aminoethyl）-morpholine as a lysosome-targetable group. This probe exhibited good selectivity and high sensitivity （4.57 μmol/L） toward NO in a wide pH range from 4 to 12. Furthermore, LysoNO-Naph can be used for imaging NO in lysosomes in living cells.