In recent years, novel structure SOI materials have been fabricated successfully. Also, SiGeOI (SGOI)material, an ideal substrate for realizing strained-silicon structures, has been investigated by modified SIMOX tech...In recent years, novel structure SOI materials have been fabricated successfully. Also, SiGeOI (SGOI)material, an ideal substrate for realizing strained-silicon structures, has been investigated by modified SIMOX technology.From 2002, the 100 mm, 125 mm and 150 mm SIMOX wafers have been successfully produced by ShanghaiSimgui Technology Co. Ltd, a commercial spin-off of Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences (CAS), and shipped to the semiconductor industry worldwide. This paperpresents an outlook for R & D on SOI technologies, and the recent status and future prospect of SIMOX wafers inChina.展开更多
文摘In recent years, novel structure SOI materials have been fabricated successfully. Also, SiGeOI (SGOI)material, an ideal substrate for realizing strained-silicon structures, has been investigated by modified SIMOX technology.From 2002, the 100 mm, 125 mm and 150 mm SIMOX wafers have been successfully produced by ShanghaiSimgui Technology Co. Ltd, a commercial spin-off of Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences (CAS), and shipped to the semiconductor industry worldwide. This paperpresents an outlook for R & D on SOI technologies, and the recent status and future prospect of SIMOX wafers inChina.
