Localized deep levels in Al_xGa_(1-x)N epitaxial films with various Al compositions

By using high-temperature deep-level transient spectroscopy （HT-DLTS） and other electrical measurement techniques, localized deep levels in n-type AlxGal xN epitaxial films with various A1 compositions （x = 0, 0.14, 0.24, 0.33, and 0.43） have been investigated. It is found that there are three distinct deep levels in AlxGal-xN films, whose level position with respect to the conduction band increases as AI composition increases. The dominant defect level with the activation energy deeper than 1.0 eV below the conduction band closely follows the Fermi level stabilization energy, indicating that its origin may be related to the defect complex, including the anti-site defects and divacancies in AlxGa1-xN films.

Electronic states and shapes of silicon quantum dots

A curviform surface breaks the symmetrical shape of silicon quantum dots on which some bonds can produce localized electronic states in the bandgap. The calculation results show that the bonding energy and electronic states of silicon quantum dots are different on various curved surfaces, for example, a Si-O-Si bridge bond on curved surface provides localized levels in bandgap and its bonding energy is shallower than that on the facet. The red-shifting ofthe photoluminescence spectrum on smaller silicon quantum dots can be explained by the curved surface effect. Experiments demonstrate that silicon quantum dots are activated for emission due to the localized levels provided by the curved surface effect.

PL Emission and Shape of Silicon Quantum Dots

The calculation results show that the bonding energy and electronic states of silicon quantum dots are different on various curved surfaces, for example, a Si-O-Si bridge bond on curved surface provides the localized levels in band gap and its bonding energy is shallower than that on facet. The red-shifting of PL spectra on smaller silicon quantum dots can be explained by curved surface effect. Experiments demonstrate that silicon quantum dots are activated for emission due to the localized levels provided in curved surface effect.

Evaluation of the geopotential value W_0^(LVD) of China

Estimation of the zero-height geopotential value W_0^（LVD） for the CVD（China Vertical Datum） plays a fundamental role in the connection of traditional height reference systems into a global height system.Estimation the W_0^（LVD） of China is based on the computation of the mean geopotential offset between the value W_0= 62636856.0 m^2 s^（-2）, selected as reference in this study, and the unknown geopotential value W_0^（LVD）. This estimation is based on the combination of ellipsoidal heights, levelled heights（referring to the CVD）, and some physical parameters, such as geopotential values, gravity values, and geoid undulations.The geoid undulations derived from the GGM（Global Geopotential Models）. This combination is performed through three approaches： The first one is based on the theory of Molodensky, and the second one compares levelled heights and geopotential values derived from the GGMs, while the third one analyses the differences between GPS/Levelling and GGMs geoid undulations. The approaches are evaluated at 65 benchmarks（BMs） covered around Qingdao where the tide gauge is used to observe the local mean sea level of China. The results from three approaches are very similar. Furthermore, the W_0^（LVD）determined for the China local vertical datum was 62636852.9462 m^2 s^（-2）, indicates a bias of about3.0538 m^2/s^（-2） compared to the conventional value of 62636856.0 m^2 s^（-2）.

Rule of Law Construction and Assessment at the Local Level

Going beyond the analytical model of the holistic state in rule of law discussion, we can classify the rule of law into national and local levels based on the stages and increments of its execution. The phenomenon of the local rule of law reflects the stages and incremental progress of building a rule of law China. It has a realistic foundation in society and a profound basis in legal theory. Comprehensively advancing the rule of law in China necessitates giving encouragement and support to construction of the rule of law at the local level. The attempts and experiments of local government enable us to explore and innovate the developmental model of the socialist rule of law with Chinese characteristics. The rule of law at the local level is embodied in three dimensions： ＂text--action---concept.＂ Assessment mechanisms and indicators for the local construction of the rule of law should also be established in accordance with this framework. The building of the rule of law at the local level should be synchronized with assessment of the rule of law. We need to optimize top-level design, conduct evaluations of local legislation, improve local rule of law work performance assessment and use a nile of law index to assess the local rule of law in an overall manner.

Numerical Simulation for a Droplet Fission Process of Electrowetting on Dielectric Device

Electrowetting has been proposed as a technique for manipulating dropletssurrounded by air or oil. In this paper, we discuss the modeling and simulation of thedroplet fission process between two parallel plates inside an electrowetting on dielectric (EWOD) device. Since the gap between the plates is small, we use the two-phaseHele-Shaw flow as a model. While there are several high order methods around, suchas the immersed interface methods [1, 2], we decide to use two first-order methods forsimplicity. A ghost-fluid (GF) method is employed to solve the governing equationsand a local level set method is used to track the drop interface. For comparison purposes, the same set of two-phase Hele-Shaw equations are also solved directly usingthe immersed boundary (IB) method. Numerical results are consistent with experimental observations reported in the literature.