Graded doping low internal loss 1060-nm InGaAs/AlGaAs quantum well semiconductor lasers

Internal loss is a key internal parameter for high power 1060-nm InGaAs/A1GaAs semiconductor laser. In this paper, we discuss the origin of internal loss of 1060-nm InGaAs/GaAs quantum welt （QW） AIGaAs separate confinement het- erostructure semiconductor laser, and the method to reduce internal loss. By light doping the n-cladding layer, and stepwise doping the p-cladding layer combined with the expanded waveguide layer, a broad area laser with internal loss of 1/cm is designed and fabricated. Ridge waveguide laser with an output power of 350 mW is obtained. The threshold current and slope efficiency near the threshold current are 20 mA and 0.8 W/A, respectively.

Internal Energy Losses and Contact Duration About a Circular Plate Colliding to a Half-Plane Target

Collisions between multibody systems are irreversible processes which cause loss of internal energy by a stress wave that propagates in the impacting bodies away from the region of impact. A coefficient of restitution relating to approach velocity is introduced to denote the losses of translational kinetic energy. A parameter β involved in internal energy losses has been obtained to calculate the coefficient of restitution. As a result, the internal energy losses caused by elastic stress waves and the contact duration in metals can be calculated numerically for the collision between circular cylinder and half plane. The metals include aluminum alloys, steel-mild 1020, steel-stainless austenitic 304, tungsten alloys, copper alloys, nickel alloys and titanium alloys. By introducing a coefficient of velocity-frequency, an exponential aggression equation related the normalized oscillating frequency and normalized approach velocity has been obtained by the numerical method.

Fabrication and optimization of 1.55-μm InGaAsP/InP high-power semiconductor diode laser

A comprehensive design optimization of 1.55-#m high power InGaAsP/InP board area lasers is performed aiming at increasing the internal quantum efficiency （ηi） while maintaining the low internal loss （αi） of the device, thereby achieving high power operation. Four different waveguide structures of broad area lasers were fabricated and characterized in depth. Through theoretical analysis and experiment verifications, we show that laser structures with stepped waveguide and thin upper separate confinement layer will result in high αi and overall slope efficiency. A continuous wave （CW） single side output power of 160 mW was obtained for an uncoated laser with a 50μm active area width and 1 mm cavity length.

Reduced threshold current density of GaN-based green laser diode by applying polarization doping p-cladding layer

Absorption induced by activated magnesium(Mg)in a p-type layer contributes considerable optical internal loss in Ga Nbased laser diodes(LDs).An LD structure with a distributed polarization doping(DPD)p-cladding layer(CL)without intentional Mg doping was designed and fabricated.The influence of the anti-waveguide structure on optical confinement was studied by optical simulation.The threshold current density,slope efficiency of LDs with DPD p-CL,and Mg-doped CL,respectively,were compared.It was found that LDs with DPD p-CL showed lower threshold current density but reduced slope efficiency,which were caused by decreasing internal loss and hole injection,respectively.