Low power consumption is a major issue in nowadays electronics systems. This trend is pushed by the development of data center related to cloud services and soon to the Internet of Things （IoT） deployment. Memories ...Low power consumption is a major issue in nowadays electronics systems. This trend is pushed by the development of data center related to cloud services and soon to the Internet of Things （IoT） deployment. Memories are one of the major contributors to power consumption. However, the development of emerging memory technologies paves the way to low-power design, through the partial replacement of the dynamic random access memory （DRAM） with the non-volatile stand-alone memory in servers or with the embedded or distributed emerging non-volatile memory in IoT objects. In the latter case, non-volatile flip-flops （NVFFs） seem a promising candidate to replace the retention latch. Indeed, IoT objects present long sleep time and NVFFs offer to save data in registers with zero power when the application is idle. This paper gives an overview of NVFF architecture flavors for various emerging memory technologies.展开更多
A low-voltage sense amplifier with reference current generator utilizing two-stage operational amplifier clamp structure for flash memory is presented in this paper,capable of operating with minimum supply voltage at1...A low-voltage sense amplifier with reference current generator utilizing two-stage operational amplifier clamp structure for flash memory is presented in this paper,capable of operating with minimum supply voltage at1 V.A new reference current generation circuit composed of a reference cell and a two-stage operational amplifier clamping the drain pole of the reference cell is used to generate the reference current,which avoids the threshold limitation caused by current mirror transistor in the traditional sense amplifier.A novel reference voltage generation circuit using dummy bit-line structure without pull-down current is also adopted,which not only improves the sense window enhancing read precision but also saves power consumption.The sense amplifier was implemented in a flash realized in 90 run flash technology.Experimental results show the access time is 14.7 ns with power supply of 1.2 V and slow corner at 125℃.展开更多
基金supported by the ANR project DIPMEM under Grant No.ANR-12-NANO-0010-04
文摘Low power consumption is a major issue in nowadays electronics systems. This trend is pushed by the development of data center related to cloud services and soon to the Internet of Things （IoT） deployment. Memories are one of the major contributors to power consumption. However, the development of emerging memory technologies paves the way to low-power design, through the partial replacement of the dynamic random access memory （DRAM） with the non-volatile stand-alone memory in servers or with the embedded or distributed emerging non-volatile memory in IoT objects. In the latter case, non-volatile flip-flops （NVFFs） seem a promising candidate to replace the retention latch. Indeed, IoT objects present long sleep time and NVFFs offer to save data in registers with zero power when the application is idle. This paper gives an overview of NVFF architecture flavors for various emerging memory technologies.
基金Project supported by the National Natural Science Fundation of China(No.61376028)
文摘A low-voltage sense amplifier with reference current generator utilizing two-stage operational amplifier clamp structure for flash memory is presented in this paper,capable of operating with minimum supply voltage at1 V.A new reference current generation circuit composed of a reference cell and a two-stage operational amplifier clamping the drain pole of the reference cell is used to generate the reference current,which avoids the threshold limitation caused by current mirror transistor in the traditional sense amplifier.A novel reference voltage generation circuit using dummy bit-line structure without pull-down current is also adopted,which not only improves the sense window enhancing read precision but also saves power consumption.The sense amplifier was implemented in a flash realized in 90 run flash technology.Experimental results show the access time is 14.7 ns with power supply of 1.2 V and slow corner at 125℃.
