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Radio Frequency Low Noise Amplifier with Linearizing Bias Circuit 被引量:1
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作者 Wen-Tao Han Qi Yu +1 位作者 Song Ye Mo-Hua Yang 《Journal of Electronic Science and Technology of China》 2009年第2期160-164,共5页
A 1.34 GHz-1=60 MHz low noise amplifier (LNA) designed in a 0.35 pm SiGe process is presented. The designed LNA exhibits a power gain of 21.46 dB and a noise figure (NF) of 1.27 dB at 1.34 GHz. The linearity is im... A 1.34 GHz-1=60 MHz low noise amplifier (LNA) designed in a 0.35 pm SiGe process is presented. The designed LNA exhibits a power gain of 21.46 dB and a noise figure (NF) of 1.27 dB at 1.34 GHz. The linearity is improved with an active biasing technique. The post-layout simulation shows an input referred 1-dB compression point (IPldn) of-11.52 dBm. Compared with the recent reported high gain LNAs, the proposed LNA has a much better linearity without degrading other performance. The LNA draws 10 mA current from a 3.3 V power supply. 展开更多
关键词 Index Terms-Impedance matching linear circuits low noise amplifier.
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