High Efficient Technology of Steelmaking With Low Silicon Hot Metal on Large Converter

To resolve the difficulty in slag formation during steelmaking with low silicon hot metal and to increase productivity, a new 5-hole lance was developed by increasing oxygen flow from 50 000 m^3/h to 60 000 m^3/h. Synthetic slag was added to adjust the slag composition. The problems such as difficulty in dephosphorization and slag adhesion to oxygen lance and hood were settled. Steel production and metal yield were increased and the nozzle life was prolonged through these techniques.

Investigation on Steelmaking with Hot Metal Containing Low Silicon Content in Large Converter

There are some problems in steelmaking with hot metal containing low silicon content such as difficulty in slag formation, less slag for dephosphorization and slag adhesion on oxygen lance and hood. To overcome these problems, experiments wcrc conducted and some improvements were obtained, such as adding appropriate flux, increasing the lance position slightly during steelmaking and using effective multi-outlet nozzle. Moreover, to keep normal heating rate, the ore and scrap charge should be reduced due to less chemical heat input in steelmaking.

Effect of normalizing cooling process on microstructure and precipitates in low-temperature silicon steel

Microstructure, precipitate and magnetic characteristic of fmal products with different normalizing cooling processes for Fe-3.2%Si low-temperature hot-rolled grain-oriented silicon steel were analyzed and compared with the hot-rolled plate by optical microscopy （OM）, transmission electron microscopy （TEM）, and energy dispersive spectrometry （EDS）. The results show that, the surface microstructure is uniform, the proportion of recrystallization in matrix increases, and the banding textures are narrowed; the precipitates, whose quantity in normalized plate is more than that in hot-rolled plate greatly, are mainly A1N, MnS, composite precipitates （Cu,Mn）S and so on. Normalizing technology with a temperature of 1120 ℃, holding for 3 min, and a two-stage cooling is a most advantaged method to obtain oriented silicon steel with sharper Goss texture and higher magnetic properties, owing to the uniform surface microstructures and the obvious inhomogeneity of microstructures along the thickness. The normalizing technology with the two-stage cooling is the optimum process, which can generate more fine precipitates dispersed over the matrix, and be beneficial for finished products to get higher magnetic properties.

Formation Characteristics of Calcium Ferrite in Low Silicon Sinter

Influence of sintering temperature, basicity and MgO content on the formation characteristics of calcium ferrite in low silicon sinter of Baotou Iron and Steel Company was studied by means of mini-sintering test and mineralographic microscope analysis. In addition, the suitable sintering parameters such as temperature and basicity were explored. The results found that optimum temperature for the formation of calcium ferrite is 1 280℃, the basicity of 2.5-2.8 is helpful to the development of acicular or columnar calcium ferrite, and MgO content in the low silicon sintering raw materials should be lower than 2.8 % because MgO can intensively inhibit the formation of calcium ferrite. And calcium ferrite in the sinter belongs to calcium ferrite with low calcium, which is different from that in ordinary sinter at home and abroad. So, it provided theoretical basis for promoting formation of calcium ferrite in low silicon sinter and improving properties of sinter.

Microstructure and Mechanical Properties of Hot Rolled Low Silicon TRIP Steel Containing Phosphorus and Vanadium

The microstructure characteristics and mechanical properties of a low-silicon TRIP steel containing phosphorus and vanadium at different finish rolling temperatures were studied by laboratory hot rolling experiments. Dif- ferent ratios of multiphase microstructure （ferrite, granular bainite and retained austenite） are obtained. With a decrease in finish rolling temperature, the volume fractions of ferrite and retained austenite increase. EBSD analysis re veals that most of the ferrite grains are fine, and decreasing of finish rolling temperature leads to an increase in low angle boundaries. Under the joint effects of fine grain strengthening, dislocation strengthening and precipitation strengthening, higher strength is obtained. When the finish rolling temperature is decreased to 800 ℃, the steel has excellent mechanical properties： Rp0.2 =470 MPa; Rm=960 MPa; Rp0. 2/Rm=0. 49; A50 =19.7%; n=0. 25.

Study on Microstructure and Mechanical Properties of Hot Rolled Low Silicon Containing Phosphorus TRIP Steel

The effects of final air cooling temperature on the microstructure and mechanical properties of hot rolled 0.2C-1.9Mn-0.5Si-0.08P TRIP steel were studied by utilizing OM, SEM, TEM and tensile tests. Experimental results showed that in the multiphase microstructure of the investigated steel when the finish rolling temperature was about 820 ℃ and the final air cooling temperature was in the range of 630-700 ℃, the grain size of most of ferrite was finer (about 4 μm) and which had higher dislocation density, the bainite packets had chaotic orientations and lath boundaries of bainite were not quite straight, the retained austenite distributed in the ferrite grain boundaries or triradius was fine and dispersive, and their grain size was about 0.4-1.9 μm. With increasing the amount of ferrite, the volume fraction of retained austenite had a slight decrease. When the final air cooling temperature was 630 ℃, the steel had excellent mechanical properties, which was characterized by combination of continuous yielding, high strength (about 796 MPa) and high elongation (22.7%) as well as low yield/strength ratio (0.58); when the final air cooling temperature increased to 700 ℃, the matrix structure was bainite packets and the comprehensive properties were deteriorated.

Open-circuit voltage analysis of p-i-n type amorphous silicon solar cells deposited at low temperature

This paper identifies the contributions of p-a-SiC：H layers and i-a-Si：H layers to the open circuit voltage of p-i-n type a-Si：H solar cells deposited at a low temperature of 125℃. We find that poor quality p-a-SiC：H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely. A significant improvement in open circuit voltage has been obtained by using high quality p-~SiC：H films optimized at the ＂low-power regime＂ under low silane flow rates and high hydrogen dilution conditions.

A novel partial silicon on insulator high voltage LDMOS with low-k dielectric buried layer

A novel partial silicon-on-insulator （PSOI） high voltage device with a low-k （relative permittivity） dielectric buried layer （LK PSOI） and its breakdown mechanism are presented and investigated by MEDICI. At a low k value the electric field strength in the dielectric buried layer （EI） is enhanced and a Si window makes the substrate share the vertical drop, resulting in a high vertical breakdown voltage; in the lateral direction, a high electric field peak is introduced at the Si window, which modulates the electric field distribution in the SOI layer; consequently, a high breakdown voltage （BV） is obtained. The values of EI and BV of LK PSOI with ki = 2 on a 2μm thick SOI layer over 1μm thick buried layer are enhanced by 74% and 19%, respectively, compared with those of the conventional PSOI. Furthermore, the Si window also alleviates the self-heating effect.

Determination of Shallow Impurity Concentration in Detector-grade Silicon by FT-IR Spectroscopy at 4.2K

A Nicolet-200SXV FT-IR spectrometer combined with an exciting light set-up has been applied to determine the shallow impurity concentration in detector-grade silicon. The detection sensitivity of boron concentration is high up to 7.8 × 10-12. The calibration curve of boron concentration in high-purity silicon has been obtained, from which the experimental value of calibration factor of boron concentration in silicon is demonstrated to be 1.15 × 1013 cm-1.

Low Temperature Growth of Hydrogenated Silicon Prepared by PECVD from Argon Diluted Silane Plasma

In order to contribute to the understanding of the optoelectronics properties of hydrogenated nanocrystalline silicon thin films, a detailed study has been conducted. The samples were deposited by 13.56 MHz PECVD (Plasma-Enhanced Chemical Vapor Deposition) of silane argon mixture. The argon dilution of silane for all samples studied was 96% by volume. The substrate temperature was fixed at 200oC. The influence of depositions parameters on optical proprieties of samples was studied by UV-Vis-NIR spectroscopy. The structural evolution was studied by Raman spectroscopy and X-ray diffraction (XRD). Intrinsic-layer samples depositions were made in this experiment in order to obtain the transition from the amorphous to crystalline phase materials. The deposition pressure varied from 400 mTorr to 1400 mTorr and the rf power from 50 to 250 W. The structural evolution studies show that beyond 200 W, we observed an amorphous-nanocrystalline transition, with an increase in crystalline fraction by increasing rf power and working pressure. Films near the amorphous to nanocrystalline transition region are grown at reasonably high deposition rates (~10 /s), which are highly desirable for the fabrication of cost effective devices. The deposition rate increases with increasing rf power and process pressure. Different crystalline fractions (21% to 95%) and crystallite size (6 - 16 nm) can be achieved by controlling the process pressure and rf power. These structural changes are well correlated to the variation of optical proprieties of the thin films.

超低介电常数的多孔F-pSiCOH薄膜制备及其紫外固化处理

面向高性能集成电路可靠性设计要求之下,开展以硅集成电路(IC)三维集成器件超低介电常数的介电薄膜研究。采用化学气相沉积法制备了一种超低介电常数(k)值的多孔F-pSiCOH薄膜。利用傅里叶变换红外光谱测定了多孔F-pSiCOH薄膜的化学结构和化学键,并探究了紫外线辐射对多孔F-pSiCOH薄膜机械性能的影响。结果表明:纳米孔和氟原子的引入能有效地降低介电常数,使多孔F-SiCOH薄膜的k值为2.15。紫外固化处理增强了多孔F-pSiCOH薄膜的弹性模量,使多孔F-pSiCOH薄膜的弹性模量从4.84GPa增大到5.76GPa,力学性能得到优化。

硅树脂/EPDM绝热材料的性能及陶瓷化机理

采用SEM、TG、DSC、拉伸试验和氧-乙炔烧蚀试验,研究了硅树脂对EPDM绝热材料力学性能、热稳定性以及耐烧蚀性能的影响,并分析了硅树脂/EPDM绝热材料在烧蚀过程中炭化层的陶瓷化机理。结果表明:随着硅树脂含量的增加,绝热层的抗拉强度和断裂伸长率均有所降低;在硅树脂含量为35 phr时,绝热层的热稳定性以及耐烧蚀性能最好,残炭率能达到30%左右,线烧蚀率最小为0.048 mm/s;观察形貌发现,含硅树脂绝热层烧蚀后形成的炭化层更致密坚硬,孔洞更小,耐冲刷性能更好。添加硅树脂能够有效提高EPDM绝热层的耐烧蚀性能,其作用机理主要是通过高温下分解产生的硅氧化物与碳进行碳热还原反应形成碳化硅和其熔融态将炭化层粘结在一起,最终形成一种类陶瓷结构的炭化层。

低硅铁尾矿制备轻质泡沫混凝土试验研究

为解决低硅铁尾矿堆存量大、利用困难等问题,以杨家湾尾矿库内低硅铁尾矿为矿物掺和料,水泥为胶凝材料,Al粉为发泡剂,制备轻质泡沫混凝土,并考察了水泥掺量、水料比、发泡剂Al粉掺量、激发剂CaO掺量等因素对泡沫混凝土性能的影响。结果表明:在铁尾矿掺量55%、Al粉掺量0.14%、CaO掺量5%、聚丙烯纤维掺量0.3%、稳泡剂掺量0.25%、水料比0.55的条件下,经20±1℃恒温恒湿养护28d,可制备出抗压强度1.84MPa、干密度768.61kg/m^(3)、比强度2.394×10^(-3)Nm/kg的轻质泡沫混凝土,综合性能良好,符合JG/T266—2011《泡沫混凝土》之A08干密度等级、C1强度等级要求。机理分析表明:孔隙率的过度提高会破坏制品内部的孔隙结构,对制品强度造成负面影响;铁尾矿的添加有助于混匀料浆,促进Ca(OH)2的生成,为料浆进一步创造碱性环境,促进钙矾石、C—S—H凝胶等水化产物的生成,其与铁尾矿的交织分布会支撑起孔隙结构,改善力学结构,使泡沫混凝土即使在较低密度下仍表现出较好的力学性能。

高铁低硅赤泥钠化还原的物相转变及铁分离特性

高温焙烧赤泥可实现铁、铝、硅等元素的形态转化,使其易于分离回收,但高铁低硅赤泥的钠化还原焙烧反应差异性及机制研究却少有报道。本文采用X射线衍射分析,考察了还原温度、碳酸钠用量、还原时间等对高铁低硅赤泥还原焙烧的矿相转化及微结构影响,分析了反应后的铁磁化分离差异性。结果表明:还原焙烧中钠与铝、硅元素结合形成铝钠硅酸盐,有效破坏了铁、铝元素的紧密结构;赤铁矿、铝针铁矿大部分转为磁铁矿和浮氏体,促进了铁氧化物还原;低熔点含钠固溶体降低了金属铁质点迁移阻力,加速了铁晶粒的长大。基于铁铝结构崩解及粗晶粒金属铁的生成,焙烧产物经磨矿-磁选后,获得了全铁含量为90.41%、Fe回收率为93.08%的铁回收指标。

基于DRIE的太赫兹行波管硅基低损耗慢波结构工艺技术研究

行波管慢波结构的制造通常采用计算机数字化控制精密机械加工技术。随着工作频率的提升,对慢波结构特征尺寸精度的要求达到微纳米级,导致加工难度大、周期长,成本高昂,一定程度上限制了技术的快速发展。硅基MEMS加工工艺具备优秀的三维形貌可控性,尺寸控制精度高,批次一致性较好。本文针对太赫兹行波管功率源对双槽深折叠波导慢波结构的设计要求,开发了基于硅基底材料的三维集成工艺制造技术。采用光刻胶掩蔽结合介质掩蔽工艺方法,聚焦优化深反应离子刻蚀(Deep reactive ion etching,DRIE)中刻蚀钝化平衡参数,完成了电镀金和金金键合的完整工艺流程开发,实现了工作频率达0.65 THz、单位长度插入损耗低至1.6 dB/mm的高性能硅基太赫兹慢波结构150 mm晶圆级工艺制备,为太赫兹行波管的技术突破和应用发展建立了技术基础。

CaLi-LSX分子筛的制备及其母液循环利用

通过对Ca-LSX分子筛进行Li^(+)交换制备了不同锂交换度的CaLi-LSX分子筛,对分子筛的离子交换工艺进行了改进,通过母液回用法降低了离子交换过程中的锂盐用量,并采用XRD,ICP,FTIR等表征手段及吸附热、静态竞争吸附、Rietveld精修等模拟计算对分子筛进行分析。实验结果表明,随锂交换度的提高,CaLi-LSX分子筛的吸附容量整体呈下降趋势,氮氧分离系数先升高后降低,在锂交换度43.7%时达到最高值5.23,此时氮气吸附容量为28.94 cm^(3)/g;Rietveld精修结果显示,单个晶胞中有10.357个Li^(+)位于SⅢ位点;母液回用法制备的分子筛吸附性能无显著下降,重复性好,产品锂交换度和常温氮氧吸附容量均相差较小,可使锂盐用量降低约90.6%。

硅基低介质损耗树脂的合成及研究

为了改善双马来酰亚胺(BMI)树脂的韧性、溶解性,提高BMI树脂在高频高速覆铜板领域的应用性,本文采用有机硅与D936型BMI树脂合成了一种有机硅改性双马来酰亚胺树脂(Si-D936)。采用红外、核磁、凝胶渗透色谱对Si-D936的特征结构和硅基-D936单体进行了表征,同时探究了不同硅含量对Si-D936溶解性能、耐热性能、力学性能以及10 GHz下介电性能的影响。结果表明:与改性前的D936相比,Si-D936在丁酮中的溶解性能得到明显改善,质量溶解度最高能达到30%(室温),但随着Si含量的增加,Si-D936的分子量增大,溶解性能略有下降;Si-D936固化后具有良好的热学性能,但随着Si含量增加,耐热性能和残碳率逐渐下降;有机硅改性可改善D936树脂的力学性能,其中SiD936-1(D936与HMM的物质的量之比为3∶1)固化物的冲击强度和拉伸强度较D936分别提升了35%和24.6%,随着Si含量的进一步增加,改性树脂的交联程度受到影响,树脂的冲击强度、弯曲强度、拉伸强度下降;有机硅改性D936树脂后,改性树脂的介电性能得到改善,介质损耗因数从0.009 4减小到0.007 2(10 GHz)。

极端环境温度对硅橡胶材料性能的影响研究进展

硅橡胶材料具有优异的机电性能以及出色的耐高低温性能,在电气绝缘领域具有广泛运用。本文综述了低温、高温对硅橡胶(SR)材料力学性能、电气性能的影响,同时介绍了硅橡胶在低温下的结晶行为以及提高硅橡胶材料热稳定性的方法,最后对硅橡胶材料的未来发展应用趋势进行了展望。

低碱高硅率高铁水泥的研发与生产实践

通过优选碱含量低的原材料、采用高硅率生料配料、改进熟料煅烧工艺操作、合理控制水泥粉磨指标,研发生产了水泥碱含量小于0.40%、熟料硅率为3.5的低碱高硅率高铁水泥,满足了国家重点工程高铁建设项目需要。

纳米硅补强氟橡胶的研究

以热弧等离子体法制备高纯度纳米硅,通过机械共混法制备炭黑/氟橡胶(FKM-C)和纳米硅/氟橡胶(FKMSi)复合材料,与不加填料的纯氟橡胶(P-FKM)复合材料相比,研究填料对氟橡胶性能的影响。结果表明:FKM-Si复合材料的脆性温度低于P-FKM复合材料;FKM-Si复合材料的硬度、拉伸强度和拉断伸长率均高于FKM-C复合材料,分别达到70度、12.16 MPa和289%;FKM-Si复合材料的截面无缺陷,说明纳米硅与氟橡胶的相容性好;FKM-Si复合材料的热稳定性比FKM-C复合材料好。