Experimental study on thermal environment in large-space building with low sidewall air supply

The thermal environmental characteristics are experim-entally studied in terms of different air supply volumes and outdoor meteorological parameters in a large-space building which is air conditioned with a low sidewall air supply.The experimental results show that the indoor vertical temperature distributions under different condition are similar.The maximum vertical temperature difference（MVTD）is up to about 20 ℃,and it linearly changes with the sol-air temperature.The indoor vertical temperature gradients（VTGs）in the upper,central and lower zones are different.The influence of the sol-air temperature on the VTGs in the upper and the lower zones is greater than that in the central zone.The characteristics of the VTGs in the three zones affected by the air supply volume are the same as those affected by the sol-air temperature.Besides,because of the small air velocity,the predicted mean vote（PMV）on comfort in the occupied zone is slightly high and the air temperature difference between the head and the ankle is usually more than 3 ℃.

Modulation of absorption manner in helicon discharges by changing profile of low axial magnetic field

The modulation of absorption manner in helicon discharge by changing the profile of low axial magnetic field is explored experimentally in this work. The experiments are carried out in Boswell-type antenna driven by 13.56-MHz power source in 0.35-Pa argon environment. The peak of the external non-uniform magnetic field （Bex） along the axis is observed in a range from 0 Gs to 250 Gs （1 Gs=10^-4 T）, where the electron density varies from 0.5×10^16 m^-3 to 9×10^16 m^-3. When Bex is located near the tube upper end sealed by a dielectric plate, or near the tube bottom end connected with a diffusion chamber, the plasmas are centralized in the tube in the former case while the strong luminance appears between the edge of the tube and the axial line in the latter case. When Bex is located in the middle of the antenna, moreover, an effective resistance （Reff） peak appears apparently with increasing magnetic field. The glow moves toward first the edge of the tube and then the two antenna legs as the magnetic field increases. The discharge in this case is caused by the absorption of Trivelpiece-Gould （TG） wave. It is suggested that Bex is located in the middle of the antenna to obtain a higher efficiency of power transfer.

Low Voltage Direct Current Supply and Utilization System:Definition,Key Technologies and Development

With rapid increase of distributed solar power generation and direct current(DC)based loads such as data centers,electric vehicles(EVs),and DC household appliances,the development trend of the power system is changed from conventional alternate current(AC)to DC.Traditional AC power systems can scarcely meet the development demand of new DC trends,especially since both the generation side and load side are comprised of DC-based electronic power components.With this background,low voltage direct current supply and utilization system(LVDCSUS)has attracted more and more attention for its great advantages over an AC grid to overcome challenges in operation,reliability,and energy loss in renewable energy connection,DC load power utilization and a number of other aspects.However,the definition of the LVDCSUS is still not clear even though many demonstration projects have been put into planning and operation.In order to provide a clear description of LVDCSUS,first,the characteristics of LVDCSUS are illustrated in this paper to show the advance of the LVDCSUS.Second,the potential application scenarios of LVDCSUS are presented in this paper.Third,application of LVDCSUS technologies and some demonstration projects in China are introduced.Besides the development of the LVDCSUS,key technologies,including but not limited to planning and design,voltage levels,control strategies,and key equipment of LVDCSUS,are discussed in this paper.Finally,future application areas and the research orientations of LVDCSUS are analyzed.

IC Design of Motor Ignitor

On the basis of analysing traditional motor ignitor,a new motor ignitor design with precise ignition angle control,consistency and low cost is proposed. Techniques of low pertinence to process and power supply are introduced to promote its stability,reliability and unity. This circuit is implemented with a standard CMOS technology with perfect electric static discharge(ESD) design and can work under a broad range of power supply from 3 V^5 V with a quiescent current less than 2 mA and can be widely used in motor with a displacement of 125 ml and below.

A boosted negative bit-line SRAM with write-assisted cell in 45 nm CMOS technology

A new 11 T SRAM cell with write-assist is proposed to improve operation at low supply voltage. In this technique, a negative bit-line voltage is applied to one of the write bit-lines, while a boosted voltage is applied to the other write bit-line where transmission gate access is used in proposed 11 T cell. Supply voltage to one of the inverters is interrupted to weaken the feedback. Improved write feature is attributed to strengthened write access devices and weakened feedback loop of cell at the same time. Amount of boosting required for write performance improvement is also reduced due to feedback weakening, solving the persistent problem of half-selected cells and reliability reduction of access devices with the other suggested boosted and negative bit-line techniques. The proposed design improves write time by 79%, 63% and slower by 52% with respect to LP 10 T, WRE 8 T and 6 T cells respectively. It is found that write margin for the proposed cell is improved by about 4×, 2.4× and 5.37× compared to WRE8 T, LP10 T and 6 T respectively. The proposed cell with boosted negative bit line（BNBL） provides47%, 31%, and 68.4% improvement in write margin with respect to no write-assist, negative bit line（NBL） and boosted bit line（BBL） write-assist respectively. Also, new sensing circuit with replica bit-line is proposed to give a more precise timing of applying boosted voltages for improved results. All simulations are done on TSMC 45 nm CMOS technology.

A sub-1 V high-precision CMOS bandgap voltage reference

A third-order,sub-1 V bandgap voltage reference design for low-power supply,high-precision applications is presented.This design uses a current-mode compensation technique and temperature-dependent resistor ratio to obtain high-order curvature compensation.The circuit was designed and fabricated by SMIC 0.18μm CMOS technology.It produces an output reference of 713.6 mV.The temperature coefficient is 3.235 ppm/℃in the temperature range of-40 to 120℃,with a line regulation of 0.199 mV/V when the supply voltage varies from 0.95 to 3 V.The average current consumption of the whole circuit is 49μA at the supply voltage of 1 V.