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Ohmic Contact at Al/TiO_2/n-Ge Interface with TiO_2 Deposited at Extremely Low Temperature
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作者 张译 韩根全 +3 位作者 刘艳 刘欢 张进成 郝跃 《Chinese Physics Letters》 SCIE CAS CSCD 2018年第2期116-119,共4页
TiO2deposited at extremely low temperature of 120°C by atomic layer deposition is inserted between metal and n-Ge to relieve the Fermi level pinning. X-ray photoelectron spectroscopy and cross-sectional transmiss... TiO2deposited at extremely low temperature of 120°C by atomic layer deposition is inserted between metal and n-Ge to relieve the Fermi level pinning. X-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy indicate that the lower deposition temperature tends to effectively eliminate the formation of GeOxto reduce the tunneling resistance. Compared with TiO2deposited at higher temperature of 250°C,there are more oxygen vacancies in lower-temperature-deposited TiO2, which will dope TiO2contributing to the lower tunneling resistance. Al/TiO2/n-Ge metal-insulator-semiconductor diodes with 2 nm 120°C deposited TiO2achieves 2496 times of current density at-0.1 V compared with the device without the TiO2interface layer case, and is 8.85 times larger than that with 250°C deposited TiO2. Thus inserting extremely low temperature deposited TiO2to depin the Fermi level for n-Ge may be a better choice. 展开更多
关键词 TIO Ohmic Contact at Al/TiO2/n-Ge Interface with TiO2 Deposited at Extremely low temperature Ge Al
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Solvents incubatedπ-πstacking in hole transport layer for perovskite-silicon 2-terminal tandem solar cells with 27.21%efficiency
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作者 Qiaoyan Ma Jufeng Qiu +10 位作者 Yuzhao Yang Fei Tang Yilin Zeng Nanxi Ma Bohao Yu Feiping Lu Chong Liu Andreas Lambertz Weiyuan Duan Kaining Ding Yaohua Mai 《Journal of Energy Chemistry》 SCIE EI CAS CSCD 2023年第7期25-30,I0002,共7页
Room temperature sputtered inorganic nickel oxide(NiO_(x))is one of the most promising hole transport layers(HTL)for perovskite-sillion 2-terminal tandem solar cells with the aid of ultrathin and compact organic layer... Room temperature sputtered inorganic nickel oxide(NiO_(x))is one of the most promising hole transport layers(HTL)for perovskite-sillion 2-terminal tandem solar cells with the aid of ultrathin and compact organic layers to passivate the surface defects.In this study,the aromatic solvent with different substituent groups was used to regulate the conformation of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)am ine](PTAA)layer.As a result,the single-junction perovskite solar cell(PSC)gained a power conversion efficiency(PCE)of 20.63%,contributing to a 27.21%efficiency for monolithic perovskite/silicon(double-side polished)2-terminal tandem solar cell,by applying the alkyl aromatic solvent to enhance theπ-πstacking of PTAA molecular chains.The tandem solar cell can maintain 95%initial efficiency after aging over 1000 h.This study provides a universal approach for improving the photovoltaic performance of NiO_(x)/polymer-based perovskite/silicon tandem solar cells and other single junction inverted PSCs. 展开更多
关键词 Tandem solar cells low temperature deposition Hole transporting property π-πstacking Alkyl aromatic solvent
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