Developing efficient energy storage for sodium-ion batteries(SIBs)by creating high-performance heterojunctions and understanding their interfacial interaction at the atomic/molecular level holds promise but is also ch...Developing efficient energy storage for sodium-ion batteries(SIBs)by creating high-performance heterojunctions and understanding their interfacial interaction at the atomic/molecular level holds promise but is also challenging.Besides,sluggish reaction kinetics at low temperatures restrict the operation of SIBs in cold climates.Herein,cross-linking nanoarchitectonics of WS_(2)/Ti_(3)C_(2)T_(x) heterojunction,featuring built-in electric field(BIEF),have been developed,employing as a model to reveal the positive effect of heterojunction design and BIEF for modifying the reaction kinetics and electrochemical activity.Particularly,the theoretical analysis manifests the discrepancy in work functions leads to the electronic flow from the electron-rich Ti_(3)C_(2)T_(x) to layered WS_(2),spontaneously forming the BIEF and“ion reservoir”at the heterogeneous interface.Besides,the generation of cross-linking pathways further promotes the transportation of electrons/ions,which guarantees rapid diffusion kinetics and excellent structure coupling.Consequently,superior sodium storage performance is obtained for the WS_(2)/Ti_(3)C_(2)T_(x) heterojunction,with only 0.2%decay per cycle at 5.0 A g^(-1)(25℃)up to 1000 cycles and a high capacity of 293.5 mA h g^(-1)(0.1A g^(-1)after 100 cycles)even at-20℃.Importantly,the spontaneously formed BIEF,accompanied by“ion reservoir”,in heterojunction provides deep understandings of the correlation between structure fabricated and performance obtained.展开更多
This paper reported some results about intrinsic nanocrystalline silicon thin films deposited by high frequency (HF) sputtering on p-type c-Si substrates at low temperature. Samples were examined by atomic force micro...This paper reported some results about intrinsic nanocrystalline silicon thin films deposited by high frequency (HF) sputtering on p-type c-Si substrates at low temperature. Samples were examined by atomic force microscopy (AFM), X-ray diffraction (XRD), infrared absorption, and ellipsometry. XRD measurements show that this film has a new microstructure, which is different from the films deposited by other methods. The ellipsometry result gives that the optical band gap of the film is about 2.63 eV. In addition, the n-type nc-Si∶H/p-type c-Si heterojunction solar cell, which has open circuit voltage (U oc ) of 558 mV and short circuit current intensity (I sc ) of 29 mA/cm2, was obtained based on the nanocrystalline silicon thin film. Irradiated under AM1.5, 100 mW/cm2 light intensity, the U oc , I sc , and FF can keep stable for 10 h.展开更多
介绍了一种电压控制型压电陶瓷驱动器的工作原理,基于OKI(OKI Electric Industry Co.)0.5μm BiCMOS(Bipolar CMOS)工艺,设计了一个用于该驱动器的高电源抑制比、低温漂的带隙电压基准源。采用自基准LDO为基准源提供伪电源电压,进一步...介绍了一种电压控制型压电陶瓷驱动器的工作原理,基于OKI(OKI Electric Industry Co.)0.5μm BiCMOS(Bipolar CMOS)工艺,设计了一个用于该驱动器的高电源抑制比、低温漂的带隙电压基准源。采用自基准LDO为基准源提供伪电源电压,进一步提高电路的电源抑制比。引入改进后的分段线性电流补偿技术对基准进行曲率校正,提高了温度补偿的灵活性和精确度。HSPICE仿真结果表明,在-40^+150℃范围内,基准电压的温度系数为2.3×10-6/℃,低频时电路电源抑制比为-174dB。展开更多
基于无机CsPbI_(2)Br的碳基无空穴传输层钙钛矿太阳能电池(carbon based hole transport material freeperovskite solar cells,C-PSCs)具有成本低、易制备和稳定性好等优点而受到广泛关注。研究了空气环境下制备高效稳定的平面异质结Cs...基于无机CsPbI_(2)Br的碳基无空穴传输层钙钛矿太阳能电池(carbon based hole transport material freeperovskite solar cells,C-PSCs)具有成本低、易制备和稳定性好等优点而受到广泛关注。研究了空气环境下制备高效稳定的平面异质结CsPbI_(2)Br C-PSCs的2种制备工艺。首先,通过对反溶剂材料的种类及用量、钙钛矿前驱体溶液浓度等参数的优化,在反溶剂为800μL、钙钛矿前驱体溶液浓度为1.2 mol/L的条件下,采用一步溶液法成功制备了光电转换效率为9.87%的CsPbI_(2)Br C-PSCs。其次,为摆脱一步溶液法对有毒反溶剂的依赖,引入低温预退火工艺,通过对预退火时间及温度、钙钛矿前驱体溶液浓度等参数的优化,在空气环境下,预退火温度为80℃、钙钛矿前驱体溶液浓度为1.6 mol/L且未使用反溶剂的条件下获得了10.52%的最佳光电转化效率,同时CsPbI_(2)Br钙钛矿的退火温度可降低至240℃,并且未封装的器件在空气环境下显示出了较好的稳定性。展开更多
基金supported by the faculty startup funds from the Yangzhou Universitythe Natural Science Foundation of Jiangsu Province(BK20210821)+1 种基金the National Natural Science Foundation of China(22102141)the Lvyangjinfeng Talent Program of Yangzhou。
文摘Developing efficient energy storage for sodium-ion batteries(SIBs)by creating high-performance heterojunctions and understanding their interfacial interaction at the atomic/molecular level holds promise but is also challenging.Besides,sluggish reaction kinetics at low temperatures restrict the operation of SIBs in cold climates.Herein,cross-linking nanoarchitectonics of WS_(2)/Ti_(3)C_(2)T_(x) heterojunction,featuring built-in electric field(BIEF),have been developed,employing as a model to reveal the positive effect of heterojunction design and BIEF for modifying the reaction kinetics and electrochemical activity.Particularly,the theoretical analysis manifests the discrepancy in work functions leads to the electronic flow from the electron-rich Ti_(3)C_(2)T_(x) to layered WS_(2),spontaneously forming the BIEF and“ion reservoir”at the heterogeneous interface.Besides,the generation of cross-linking pathways further promotes the transportation of electrons/ions,which guarantees rapid diffusion kinetics and excellent structure coupling.Consequently,superior sodium storage performance is obtained for the WS_(2)/Ti_(3)C_(2)T_(x) heterojunction,with only 0.2%decay per cycle at 5.0 A g^(-1)(25℃)up to 1000 cycles and a high capacity of 293.5 mA h g^(-1)(0.1A g^(-1)after 100 cycles)even at-20℃.Importantly,the spontaneously formed BIEF,accompanied by“ion reservoir”,in heterojunction provides deep understandings of the correlation between structure fabricated and performance obtained.
文摘This paper reported some results about intrinsic nanocrystalline silicon thin films deposited by high frequency (HF) sputtering on p-type c-Si substrates at low temperature. Samples were examined by atomic force microscopy (AFM), X-ray diffraction (XRD), infrared absorption, and ellipsometry. XRD measurements show that this film has a new microstructure, which is different from the films deposited by other methods. The ellipsometry result gives that the optical band gap of the film is about 2.63 eV. In addition, the n-type nc-Si∶H/p-type c-Si heterojunction solar cell, which has open circuit voltage (U oc ) of 558 mV and short circuit current intensity (I sc ) of 29 mA/cm2, was obtained based on the nanocrystalline silicon thin film. Irradiated under AM1.5, 100 mW/cm2 light intensity, the U oc , I sc , and FF can keep stable for 10 h.
文摘介绍了一种电压控制型压电陶瓷驱动器的工作原理,基于OKI(OKI Electric Industry Co.)0.5μm BiCMOS(Bipolar CMOS)工艺,设计了一个用于该驱动器的高电源抑制比、低温漂的带隙电压基准源。采用自基准LDO为基准源提供伪电源电压,进一步提高电路的电源抑制比。引入改进后的分段线性电流补偿技术对基准进行曲率校正,提高了温度补偿的灵活性和精确度。HSPICE仿真结果表明,在-40^+150℃范围内,基准电压的温度系数为2.3×10-6/℃,低频时电路电源抑制比为-174dB。
文摘基于无机CsPbI_(2)Br的碳基无空穴传输层钙钛矿太阳能电池(carbon based hole transport material freeperovskite solar cells,C-PSCs)具有成本低、易制备和稳定性好等优点而受到广泛关注。研究了空气环境下制备高效稳定的平面异质结CsPbI_(2)Br C-PSCs的2种制备工艺。首先,通过对反溶剂材料的种类及用量、钙钛矿前驱体溶液浓度等参数的优化,在反溶剂为800μL、钙钛矿前驱体溶液浓度为1.2 mol/L的条件下,采用一步溶液法成功制备了光电转换效率为9.87%的CsPbI_(2)Br C-PSCs。其次,为摆脱一步溶液法对有毒反溶剂的依赖,引入低温预退火工艺,通过对预退火时间及温度、钙钛矿前驱体溶液浓度等参数的优化,在空气环境下,预退火温度为80℃、钙钛矿前驱体溶液浓度为1.6 mol/L且未使用反溶剂的条件下获得了10.52%的最佳光电转化效率,同时CsPbI_(2)Br钙钛矿的退火温度可降低至240℃,并且未封装的器件在空气环境下显示出了较好的稳定性。
