An effective'salt in dimethyl sulfoxide/water'electrolyte enables high-voltage supercapacitor operated at-50℃

Compared with organic electrolytes,aqueous electrolytes exhibit significantly higher ionic conductivity and possess inherent safety features,showcasing unique advantages in supercapacitors.However,challenges remain for low-salt aqueous electrolytes operating at high voltage and low temperature.Herein,we report a low-salt(0.87 m,m means mol kg^(-1))'salt in dimethyl sulfoxide/water'hybrid electrolyte with non-flammability via hybridizing aqueous electrolyte with an organic co-solvent of dimethyl sulfoxide(hydrogen bond acceptor).As a result,the 0.87 m hybrid electrolyte exhibits enhanced electrochemical stability,a freezing temperature below-50℃,and an outstanding ionic conductivity of 0.52mS cm~(-1)at-50℃.Dimethyl sulfoxide can anchor water molecules through intermolecular hydrogen bond interaction,effectively reinforcing the stability of water in the hybrid electrolyte.Furthermore,the interaction between dimethyl sulfoxide and water molecules diminishes the involvement of water in the generation of ordered ice crystals,finally facilitating the low-temperature performance of the hybrid electrolyte.When paired with the 0.87 m'salt in dimethyl sulfoxide/water'hybrid electrolyte,the symmetric supercapacitor presents a 2.0 V high operating voltage at 25℃,and can operate stably at-50℃.Importantly,the suppressed electrochemical reaction of water at-50℃further leads to the symmetric supercapacitor operated at a higher voltage of 2.6 V.This modification strategy opens an effective avenue to develop low-salt electrolytes for high-voltage and low-temperature aqueous supercapacitors.

ANovel Non-Isolated Cubic DC-DC Converter with High Voltage Gain for Renewable Energy Power Generation System

In recent years,switched inductor(SL)technology,switched capacitor(SC)technology,and switched inductor-capacitor(SL-SC)technology have been widely applied to optimize and improve DC-DC boost converters,which can effectively enhance voltage gain and reduce device stress.To address the issue of low output voltage in current renewable energy power generation systems,this study proposes a novel non-isolated cubic high-gain DC-DC converter based on the traditional quadratic DC-DC boost converter by incorporating a SC and a SL-SC unit.Firstly,the proposed converter’s details are elaborated,including its topology structure,operating mode,voltage gain,device stress,and power loss.Subsequently,a comparative analysis is conducted on the voltage gain and device stress between the proposed converter and other high-gain converters.Then,a closed-loop simulation system is constructed to obtain simulation waveforms of various devices and explore the dynamic performance.Finally,an experimental prototype is built,experimental waveforms are obtained,and the experimental dynamic performance and conversion efficiency are analyzed.The theoretical analysis’s correctness is verified through simulation and experimental results.The proposed converter has advantages such as high voltage gain,low device stress,high conversion efficiency,simple control,and wide input voltage range,achieving a good balance between voltage gain,device stress,and power loss.The proposed converter is well-suited for renewable energy systems and holds theoretical significance and practical value in renewable energy applications.It provides an effective solution to the issue of low output voltage in renewable energy power generation systems.

Improved RF power performance of InAlN/GaN HEMT by optimizing rapid thermal annealing process for high-performance low-voltage terminal applications

Improved radio-frequency(RF)power performance of InAlN/GaN high electron mobility transistor(HEMT)is achieved by optimizing the rapid thermal annealing(RTA)process for high-performance low-voltage terminal applications.By optimizing the RTA temperature and time,the optimal annealing condition is found to enable low parasitic resistance and thus a high-performance device.Besides,compared with the non-optimized RTA HEMT,the optimized one demonstrates smoother ohmic metal surface morphology and better heterojunction quality including the less degraded heterojunction sheet resistance and clearer heterojunction interfaces as well as negligible material out-diffusion from the barrier to the channel and buffer.Benefiting from the lowered parasitic resistance,improved maximum output current density of 2279 mA·mm^(-1)and higher peak extrinsic transconductance of 526 mS·mm^(-1)are obtained for the optimized RTA HEMT.In addition,due to the superior heterojunction quality,the optimized HEMT shows reduced off-state leakage current of 7×10^(-3)mA·mm^(-1)and suppressed current collapse of only 4%,compared with those of 1×10^(-1)mA·mm^(-1)and 15%for the non-optimized one.At 8 GHz and V_(DS)of 6 V,a significantly improved power-added efficiency of 62%and output power density of 0.71 W·mm^(-1)are achieved for the optimized HEMT,as the result of the improvement in output current,knee voltage,off-state leakage current,and current collapse,which reveals the tremendous advantage of the optimized RTA HEMT in high-performance low-voltage terminal applications.

Demonstration and modeling of unipolar-carrier-conduction GaN Schottky-pn junction diode with low turn-on voltage

By introducing a thin p-type layer between the Schottky metal and n-GaN layer, this work presents a Schottky-pn junction diode(SPND) configuration for the GaN rectifier fabrication. Specific unipolar carrier conduction characteristic is demonstrated by the verification of temperature-dependent current–voltage(I–V) tests and electroluminescence spectra.Meanwhile, apparently advantageous forward conduction properties as compared to the pn diode fabricated on the same wafer have been achieved, featuring a lower turn-on voltage of 0.82 V. Together with the analysis model established in the GaN SPND for a wide-range designable turn-on voltage, this work provides an alternative method to the GaN rectifier strategies besides the traditional solution.

Research on Low Voltage Series Arc Fault Prediction Method Based on Multidimensional Time-Frequency Domain Characteristics

The load types in low-voltage distribution systems are diverse.Some loads have current signals that are similar to series fault arcs,making it difficult to effectively detect fault arcs during their occurrence and sustained combustion,which can easily lead to serious electrical fire accidents.To address this issue,this paper establishes a fault arc prototype experimental platform,selects multiple commonly used loads for fault arc experiments,and collects data in both normal and fault states.By analyzing waveform characteristics and selecting fault discrimination feature indicators,corresponding feature values are extracted for qualitative analysis to explore changes in timefrequency characteristics of current before and after faults.Multiple features are then selected to form a multidimensional feature vector space to effectively reduce arc misjudgments and construct a fault discrimination feature database.Based on this,a fault arc hazard prediction model is built using random forests.The model’s multiple hyperparameters are simultaneously optimized through grid search,aiming tominimize node information entropy and complete model training,thereby enhancing model robustness and generalization ability.Through experimental verification,the proposed method accurately predicts and classifies fault arcs of different load types,with an average accuracy at least 1%higher than that of the commonly used fault predictionmethods compared in the paper.

A Hybrid Five-Level Single-Phase Rectifier with Low Common-Mode Voltage

Rectifiers with high efficiency and high power density are crucial to the stable and efficient power supply of 5G communication base stations,which deserves in-depth investigation.In general,there are two key problems to be addressed:supporting both alternating current(AC)and direct current(DC)input,and minimizing the common-mode voltage as well as leakage current for safety reasons.In this paper,a hybrid five-level single-phase rectifier is proposed.A five-level topology is adopted in the upper arm,and a half-bridge diode topology is adopted in the lower arm.A dual closed-loop control strategy and a flying capacitor voltage regulation method are designed accordingly so that the compatibility of both AC and DC input is realized with low common voltage and small passive devices.Simulation and experimental results demonstrate the effectiveness and performance of the proposed rectifier.

Analysis and management strategies for the low voltage problems of rural power grid based on the distribution network flow calculation method

For a long time, because of the lack of investment capital and enough attentions, the overall constructions of rural power grid were far behind than the urban power grid in Chongqing Jiangbei Power Company. The low voltage problems were highlighted in the rural power grid due to the characteristics of rural power grid. Using the distribution network flow calculation method, we evaluated the low voltage problems of the rural power grid which belongs to Chongqing Jiangbei Power Company. In addition, we collected the data of distribution transformers in electricity consumption peak period. Some practical management strategies were proposed by the analysis and evaluation of potential and appeared low voltage problems.

Open-circuit voltage analysis of p-i-n type amorphous silicon solar cells deposited at low temperature

This paper identifies the contributions of p-a-SiC：H layers and i-a-Si：H layers to the open circuit voltage of p-i-n type a-Si：H solar cells deposited at a low temperature of 125℃. We find that poor quality p-a-SiC：H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely. A significant improvement in open circuit voltage has been obtained by using high quality p-~SiC：H films optimized at the ＂low-power regime＂ under low silane flow rates and high hydrogen dilution conditions.

Research on arc erosion of silver-based alloy contact materials under low voltage,resistive load and small current at 400 Hz and 50 Hz

By using a self-developed IF power and a ASTM contact material experimental system of small-capacity and variable frequency,the value of arcing characteristics and the welding force of the silver-based contact material are acquired under low voltage,resistive load and small current at 400 Hz and 50 Hz. By means of an electricity-ray analytical balance,SEM and EDAX,the weighing values of the contact materials and the changes of AgCdO,AgNi,AgC and AgW contact material surface profile and micro-area constituent are obtained and analyzed. The arc erosion causes of silver-based alloy contact materials at 400 Hz and 50 Hz are also discussed.

Key technologies for medium and low voltage DC distribution system

Development of the medium and low voltage DC distribution system is of great significance to a regional transmission of electric energy,increasing a penetration rate of new energy,and enhancing a safety of the operation of the AC/DC interconnected grid.This paper first summarizes the medium and low voltage DC distribution system schemes and plans put forward by many countries,and then elaborate status of under-construction medium and low voltage DC distribution system project cases in China.Based on these project cases,this paper analyzes key issues involved in the medium and low voltage DC distribution system topologies,equipment,operation control technologies and DC fault protections,in order to provide theoretical and technical reference for future medium and low voltage DC distribution system-related projects.Finally,this paper combines a current China research status to summarize and give a prediction about the future research direction of medium and low voltage DC distribution system,which can provide reference for the research of medium and low voltage DC distribution system.

Ultra-low specific on-resistance high-voltage vertical double diffusion metal–oxide–semiconductor field-effect transistor with continuous electron accumulation layer

A new ultra-low specific on-resistance （Ron,sp） vertical double diffusion metal-oxide-semiconductor field-effect tran- sistor （VDMOS） with continuous electron accumulation （CEA） layer, denoted as CEA-VDMOS, is proposed and its new current transport mechanism is investigated. It features a trench gate directly extended to the drain, which includes two PN junctions. In on-state, the electron accumulation layers are formed along the sides of the extended gate and introduce two continuous low-resistance current paths from the source to the drain in a cell pitch. This mechanism not only dramatically reduces the Ron,sp but also makes the Ron,sp almost independent of the n-pillar doping concentration （Am）. In off-state, the depletion between the n-pillar and p-pillar within the extended trench gate increases the Nn, and further reduces the Ron,sp. Especially, the two PNjunctions within the trench gate support a high gate--drain voltage in the off-state and on-state, re- spectively. However, the extended gate increases the gate capacitance and thus weakens the dynamic performance to some extent. Therefore, the CEA-VDMOS is more suitable for low and medium frequencies application. Simulation indicates that the CEA-VDMOS reduces the Ron,sp by 80% compared with the conventional super-junction VDMOS （CSJ-VDMOS） at the same high breakdown voltage （BV）.

Boosting of reversible capacity delivered at a low voltage below 0.5 V in mildly expanded graphitized needle coke anode for a high-energy lithium ion battery

The rate performance and cycle stability of graphitized needle coke(GNC)as anode are still limited by the sluggish kinetics and volume expansion during the Li ions intercalation and de-intercalation process.Especially,the output of energy density for lithium ion batteries(LIBs)is directly affected by the delithiation capacity below 0.5 V.Here,the mildly expanded graphitized needle coke(MEGNC)with the enlarged interlayer spacing from 0.346 to 0.352 nm is obtained by the two-step mild oxidation intercalation modification.The voltage plateau of MEGNC anode below 0.5 V is obviously broadened as compared to the initial GNC anode,contributing to the enhancement of Li storage below the low voltage plateau.Moreover,the coin full cell and pouch full cell configured with MEGNC anode exhibit much enhanced Li storage ability,energy density and better cycling stability than those full cells configured with GNC and commercial graphite anodes,demonstrating the practical application value of MEGNC.The superior anode behaviors of MEGNC including the increased effective capacity at low voltage and superior cyclic stability are mainly benefited from the enlarged interlayer spacing,which not only accelerates the Li ions diffusion rate,but also effectively alleviates the volume expansion and fragmentation during the Li ions intercalation process.In addition,the above result is further confirmed by the density functional theory simulation.This work provides an effective modification strategy for the NC-based graphite to enhance the delithiation capacity at a low voltage plateau,dedicated to improving the energy density and durability of LIBs.

High-Quality Three-Dimensional Computed Tomography Angiography of Abdominal Viscera with Small Focal Spot, Low Tube Voltage, and Iterative Model Reconstruction Technique

Purpose: To evaluate the quality of three-dimensional (3D) CT angiography images of the abdominal viscera with small focal spot, low tube voltage, and iterative model reconstruction technique (IMR). Materials and Methods: Seven patients with suspected disease of the pancreatobiliary system had undergone CT with high-quality CTA protocol in the present study. There were 5 men and 2 women, ranging in age from 52 to 80 years (mean: 64 years). Results: Depiction of abdominal small artery, small portal vein was possible in all cases. In two cases that we were able to compare, it was superior to standard CTA in small vascular depiction in CTA made clearly in high quality protocol. Conclusions: Although the use of small focal spot, low tube voltage, and IMR can produce higher-quality images of abdominal vessels than standard CTA, this improvement is not significant at elevated radiation doses.

Voltage Unbalance Mitigation in Low Voltage Distribution Networks with Photovoltaic Systems

This paper proposes a technique to mitigate the voltage unbalance issue caused by the high penetration of photovoltaic （PV） systems into the low voltage distribution networks （LVDN） using a single phase energy storage system （ESS）. The ESS comprises a hi-directional power flow inverter and a battery bank. The system is capable of absorbing the excess power and delivering power to the network in order to keep the voltage unbalance factor （VUF） below the statutory limit of 1%. Investigations are carried out in the experimental small-scale energy zone （SSEZ）. The experimental results demonstrate that the ESS is capable of mitigating the VUF of the network.

High performance InAlN/GaN high electron mobility transistors for low voltage applications

A high performance InAlN/GaN high electron mobility transistor(HEMT)at low voltage operation(6-10 V drain voltage)has been fabricated.An 8 nm InAlN barrier layer is adopted to generate large 2DEG density thus to reduce sheet resistance.Highly scaled lateral dimension(1.2μm source-drain spacing)is to reduce access resistance.Both low sheet resistance of the InAlN/GaN structure and scaled lateral dimension contribute to an high extrinsic transconductance of 550 mS/mm and a large drain current of 2.3 A/mm with low on-resistance(Ron)of 0.9Ω·mm.Small signal measurement shows an fT/fmax of 131 GHz/196 GHz.Large signal measurement shows that the InAlN/GaN HEMT can yield 64.7%-52.7%(Vds=6-10 V)power added efficiency(PAE)associated with 1.6-2.4 W/mm output power density at 8 GHz.These results demonstrate that GaN-based HEMTs not only have advantages in the existing high voltage power and high frequency rf field,but also are attractive for low voltage mobile compatible rf applications.

Low-temperature and high-voltage planar micro-supercapacitors based on anti-freezing hybrid gel electrolyte

Micro-supercapacitors(MSCs)are considered as highly competitive power sources for miniaturized electronics.However,narrow voltage window and poor anti-freezing properties of MSCs in conventional aqueous electrolytes lead to low energy density and limited environmental adaption.Herein,we report the construction of low-temperature and high-energy-density MSCs based on anti-freezing hybrid gel electrolytes(HGE)through introducing ethylene glycol(EG)additives into aqueous LiCl electrolyte.Since EG partially destroys hydrogen bond network among water molecules,the HGE exhibits maximum electrochemical stability window of 2.7 V and superior anti-freezing features with a glass transition temperature of-62.8℃.Further,the optimized MSCs using activated carbon microelectrodes possess impressive volumetric capacitance of 28.9 F cm^(-3)and energy density of 10.3 mWh cm^(-3)in the voltage of 1.6 V,2.6 times higher than MSCs tested in 1.2 V.Importantly,the MSCs display 68.3%capacitance retention even at-30℃ compared to the value at 25℃,and ultra-long cyclability with 85.7%of initial capacitance after 15,000 times,indicating extraordinary low-temperature performance.Besides,our devices offer favorable flexibility and modular integration.Therefore,this work provides a general strategy of realizing flexible,safe and anti-freezing microscale power sources,holding great potential towards subzero-temperature microelectronic applications.

Low Voltage Ride through Control Capability of a Large Grid Connected PV System Combining DC Chopper and Current Limiting Techniques

This paper presents the development and performance capability of a comprehensive Low voltage ride through (LVRT) control scheme that makes use of both the DC chopper and the current limiting based on the required reactive power during fault time. The study is conducted on an 8.5 MW single stage PV power plant (PVPP) connected to the Rwandan grid. In the event of fault disturbance, this control scheme helps to overcome the problems of excessive DC-link voltage by fast activation of the DC chopper operation. At the same instance, AC current is limited to the maximum rating of the inverter as a function of the injected reactive current. This helps overcome AC-over- current that may possibly lead to damage or disconnection of the inverter. The control scheme also ensures voltage support and power balance through the injection of reactive current as per grid code requirements. Selected simulations using MATLAB are carried out in the events of different kinds of fault caused voltage dips. Results demonstrate the effectiveness of the proposed LVRT control scheme.

Low driving voltage in an organic light-emitting diode using MoO_3/NPB multiple quantum well structure in a hole transport layer

The driving voltage of an organic light-emitting diode（OLED） is lowered by employing molybdenum trioxide（MoO3）/N,N＇-bis（naphthalene-1-yl）-N,N＇-bis（phe-nyl）-benzidine（NPB） multiple quantum well（MQW） structure in the hole transport layer.For the device with double quantum well（DQW） structure of ITO/[MoO3（2.5 nm）/NPB（20 nm）]2/Alq3（50 nm）/LiF（0.8 nm）/Al（120 nm）],the turn-on voltage is reduced to 2.8 V,which is lowered by 0.4 V compared with that of the control device（without MQW structures）,and the driving voltage is 5.6 V,which is reduced by 1 V compared with that of the control device at the 1000 cd/m2.In this work,the enhancement of the injection and transport ability for holes could reduce the driving voltage for the device with MQW structure,which is attributed not only to the reduced energy barrier between ITO and NPB,but also to the forming charge transfer complex between MoO3 and NPB induced by the interfacial doping effect of MoO3.

1.0 V low voltage CMOS mixer based on voltage control load technique

A CMOS active mixer based on voltage control load technique which can operate at 1.0 V supply voltage was proposed,and its operation principle,noise and linearity analysis were also presented.Contrary to the conventional Gilbert-type mixer which is based on RF current-commutating,the load impedance in this proposed mixer is controlled by the LO signal,and it has only two stacked transistors at each branch which is suitable for low voltage applications.The mixer was designed and fabricated in 0.18 μm CMOS process for 2.4 GHz ISM band applications.With an input of 2.44 GHz RF signal and 2.442 GHz LO signal,the measurement specifications of the proposed mixer are:the conversion gain (GC) is 5.3 dB,the input-referred third-order intercept point (PIIP3) is 4.6 dBm,the input-referred 1 dB compression point (P1dB) is -7.4 dBm,and the single-sideband noise figure (NFSSB) is 21.7 dB.

Reactive Current Allocation and Control Strategies Improvement of Low Voltage Ride Though for Doubly Fed Induction Wind Turbine Generation System

为满足风电机组低电压穿越（low voltage ride through,LVRT）的测试要求及其电气模型一致性评估需要,提出考虑向电网注入无功电流的双馈风电机组LVRT的控制策略。在阐述风电机组LVRT测试要求及控制原理的基础上,推导双馈发电机（doubly fed induction generator,DFIG）定子侧及网侧变流器输出无功电流极限表达式,研究电网电压跌落深度和发电机总输出有功功率对其无功电流极限值的影响规律,进而提出DFIG在LVRT期间的无功电流分配算法和改进的有功、无功功率控制策略。最后,以某实际2 MW双馈风电机组为例,分别对风速为5和12 m/s、电网电压对称跌落至20%和50%工况下的LVRT运行性能进行仿真比较和样机测试。与传统LVRT控制方法的对比表明,所提改进控制策略能更好地满足风电机组LVRT的测试要求。样机测试结果进一步证明了改进控制策略和仿真模型的有效性。