The Effects of Low-Energy Nitrogen Ion Implantation on Pollen Exine Substructure and Pollen Germination of Cedrus deodara

The aim of this study is to investigate the biological effects of ion beams on pollen. Pollen grains of Cedrus deodara were implanted with 30 keV nitrogen ion beams at doses ranging from 1 × 10^15 ions/cm^2 to 15 × 10^15 ions/cm^2. The effects of N^＋ implantation on the pollen exine substructure were examined using an atomic force microscope （AFM）, and the structure and morphology of pollen and pollen tubes were observed using a laser scanning confocal microscope （LSCM）. AFM observations distinctly revealed the erosion of the pollen exine caused by N^＋ implantation in the micrometer to nanometer range. Typical results showed that the erosion degree was linearly proportional to the ion dose. Pollen germination experiments in vitro indicated that N^＋ implantation within a certain dose range increased the rate of pollen germination. The main abnormal phenomena in pollen tubes were also analyzed. Our results suggest that low energy ion implantation with suitable energy and dosage can be used to break the pollen wall to induce a transfer of exogenous DNA into the pollen without any damage to the cytoplasm and nuclei of the pollen. The present study suggests that a combination of the method of ion-beam-induced gene transfer and the pollen-tube pathway method （PTPW） would be a new plant transformation method.

Improvement of tribological behavior of a Ti-Al-V alloy by nitrogen ion implantation

The tribological properties especially wear and hardness of a Ti-Al-V alloy with nitrogen implantation (energy 60 keV) were investigated. The implantation was carried out at fluences range from 1×1016 to 4×1017 ions/cm2. Glancing angle X-ray diffraction (GAXRD) and X-ray photoelectron spectroscopy (XPS) analyses were performed to obtain surface characterization of the implanted sample. The unimplanted and implanted samples were also annealed at 600 ℃ in order to understand the influence of annealing on the tribological properties of Ti-Al-V. The hardness shows significant improvement at the higher fluence. After annealing at 600 ℃, the friction coefficient exhibits a relative decrease for the nitrogen-implanted samples. In addition, the wear rates of the implanted samples exhibits a great decrease after annealing at 600 ℃. Nature of the surface and reason for the variation and improvement in wear resistance were discussed in detail.

Improvement of Vitamin K_2 Production by Escherichia sp.with Nitrogen Ion Beam Implantation Induction

Low-energy ion implantation as a novel mutagen has been increasingly applied in the microbial mutagenesis for its higher mutation frequency and wider mutation spectra. In this work, N^＋ ion beam implantation was used to enhance Escherichia sp. in vitamin K2 yield. Optimization of process parameters under submerged fermentation was carried out to improve the vitamin K2 yield of mutant FM5-632. The results indicate that an excellent mutant FM5-632 with a yield of 123.2±1.6 μg/L, that is four times that of the original strain, was achieved by eight successive implantations under the conditions of 15 keV and 60 ×2.6 ×10^13 ions/cm^2. A further optimization increased the yield of the mutant by 39.7%, i.e. 172.1±1.2 μg/L which occurred in the mutant cultivated in the optimal fermentation culture medium composed of （per liter）： 15.31 g glycerol, 10 g peptone, 2.89 g yeast extract, 5 g K2HPO4, 1 g NaCl, 0.5 g MgSO4·7H2O and 0.04 g cedar wood oil, incubated at 33 ℃, pH 7.0 and 180 rpm for 120 h.

XPS INVESTIGATION OF NITROGEN IONS IMPLANTED INTO ALUMINUM ALLOY BY PLASMA BASED ION IMPLANTATION

Aluminum alloy 2024 has been implanted with nitrogen ions at various doses by plasma based ion implantation. The introduction of energetic ions causes structural change within the near surface region of the solid. The samples have been characterized by X-ray Photoelectron Spectroscopy at various depths. The chemical states of Al and N were identified by deconvolution of the recorded XPS spectra. After plasma based ion implanted nitrogen into aluminum, not only the AlN precipitates but also super saturated solution of nitrogen forms. The presence of aluminum in different chemical states is corresponding to Al, AlN and Al2O3. The majority of nitrogen is in the form of the supersaturated solution. With the increase of nitrogen dose, the amount of AlN precipitates increases.

Plasma-based ion implantation of nitrogen into Ti-6Al-4V: effect of implantation time and pre-or post-implantation aging on nitrogen distribution and microhardness

Presents the investigation of the effect of implantation time and pre or post implantation aging on nitrogen distribution and microhardness with the following findings: the colour of the surface is modified after implantation and it gets darker with the increase of implantation time, and is not affected by pre or post implantation aging; for every implanted sample, a peak is found in the near surface region of the nitrogen concentration depth profile determined by X ray photoelectron spectroscopy (XPS); The position of the peak is not affected by implantation time and pre or post implantation aging used; With the increase of implantation time, the surface nitrogen concentration increases, and the peak is heightened, but the speed of heightening decreases; The surface structure formed after the implantation may be more unstable and more readily oxidized in its subsequent exposure to air; The implanted samples can be protected against oxidation by immersing them in pure alcohol; and the immersion causes the surface nitrogen concentration to increase somewhat and the surface oxygen concentration to decrease in comparison with the exposure to air. The implanted samples exhibit higher hardness improvement factor especially at low plastic penetrations. The exposure to air causes the hardness improvement factor to increase. As the implantation time is increased, the hardness improvement factor increases (but at a decreased speed). Over long implantation time can induce a softening process because the hardness improvement effects are then unable to follow the effect of strength loss.

Structure and visible photocatalytic activity of nitrogen-doped meso-porous TiO_2 layer on Ti6Al4V substrate by plasma-based ion implantation

The nitrogen-doped porous TiO2 layer on Ti6Al4V substrate was fabricated by plasma-based ion implantation of He, O and N. In order to increase the photodegradation efficiency of TiO2 layer, two methods were used in the process by forming mesopores to increase the specific surface area and by nitrogen doping to increase visible light absorption. Importantly, TiO2 formation, porosity architectures and nitrogen doping can be performed by implantation of He, O and N in one step. After implantation, annealing at 650 ℃ leads to a mixing phase of anatase with a little rutile in the implanted layer. By removing the near surface compact layer using argon ion sputtering, the meso-porous structure was exposed on surfaces. Nitrogen doping enlarges the photo-response region of visible light. Moreover, the nitrogen dose of 8×1015 ion/cm2 induces a stronger visible light absorption. The photodegradation of rhodamine B solution with visible light sources indicates that the mesopores on surfaces and nitrogen doping contribute to an apparent increase of photocatalysis efficiency.

Nitrogen Deposition Via N^+ Implantation:Implications for Primordial Amino Acids Synthesis Revisited

In this paper amino acids synthesis in aqueous solution induced by ion implantation, which was possibly ubiquitous on primitive Earth, is investigated. As a discharge using a graphite rod as the anode under a nitrogen atmosphere was performed against ammonia water, it was found that three kinds of amino acids were produced. They were glycine, serine and alanine. By introducing ion implantation into the carboxylate solution, ammonia and amino acids were also formed via nitrogen deposition/fixation. Another isotopic experiment showed that both OH and H radicals played a crucial role in the arc-discharge-promoted reactions in aqueous solution Therefore, we believe that the impact of ions in the original atmospheric conditions might have functioned as a promoter in the chemical origin and evolution of life.

Influence of Temperature on Nitrogen Ion Implantation of Ti6Al4V Alloy

in order to achieve increased layer thickness, and wearing resistance, enhanced ion implantation with nitrogen has been carried out at temperatures of 100, 200, 400, and 600℃ with a dose of 4x 1018 ions' cm-2. Using the Plasma Source ion Implantation (PSII) device, specimens of Ti6Al4V alloy were implanted at elevated temperatures, using the ion flux as the heating source. Auger Electron Spectroscopy (AES), Scanning Electron Microscopy (SEM), X-ray Diffraction (XRD), micro-hardness measurements and pin-on-disk wearing tester were utilized to evaluate the surface property improvements. The thickness of the implanted layer increased by about an order of magnitude when the temperature was elevated from 100 to 600℃. Higher surface hardness and wearing resistance was also obtained in implantation under higher temperature. XRD image showed the presence of titanium nitrides on the implanted surface.

Modeling of Inner Surface Modification of a Cylindrical Tube by Plasma-Based Low-Energy Ion Implantation

The inner surface modification process by plasma-based low-energy ion implantation（PBLEII）with an electron cyclotron resonance（ECR）microwave plasma source located at the central axis of a cylindrical tube is modeled to optimize the low-energy ion implantation parameters for industrial applications.In this paper,a magnetized plasma diffusion fluid model has been established to describe the plasma nonuniformity caused by plasma diffusion under an axial magnetic field during the pulse-off time of low pulsed negative bias.Using this plasma density distribution as the initial condition,a sheath collisional fluid model is built up to describe the sheath evolution and ion implantation during the pulse-on time.The plasma nonuniformity at the end of the pulse-off time is more apparent along the radial direction compared with that in the axial direction due to the geometry of the linear plasma source in the center and the difference between perpendicular and parallel plasma diffusion coefficients with respect to the magnetic field.The normalized nitrogen plasma densities on the inner and outer surfaces of the tube are observed to be about 0.39 and 0.24,respectively,of which the value is 1 at the central plasma source.After a 5μs pulse-on time,in the area less than 2 cm from the end of the tube,the nitrogen ion implantation energy decreases from 1.5 keV to 1.3 keV and the ion implantation angle increases from several degrees to more than 40°;both variations reduce the nitrogen ion implantation depth.However,the nitrogen ion implantation dose peaks of about 2×10^（10）-7×10^（10）ions/cm^2 in this area are 2-4 times higher than that of 1.18×10^（10）ions/cm^2 and 1.63×10^（10）ions/cm^2 on the inner and outer surfaces of the tube.The sufficient ion implantation dose ensures an acceptable modification effect near the end of the tube under the low energy and large angle conditions for nitrogen ion implantation,because the modification effect is mainly determined by the ion implantation dose,just as the mass transfer process in PBLEII is dominated by low-energy ion implantation and thermal diffusion.Therefore,a comparatively uniform surface modification by the low-energy nitrogen ion implantation is achieved along the cylindrical tube on both the inner and outer surfaces.

Biological effects of implantation and penetration of nitrogenion beams on wheat seeds

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Temperature elevated N ion implantation of Ti6A14V alloys using the plasma source

Specimens of Ti6A14V alloy were implanted with nitrogen ions of 4× 1018 cm-2 at temperatures from 100 to 600℃. Auger Electron Spectroscopy (AES), microhardness measurements and pin-on-disk wear testing, Scanning Electron Mi- croscopy (SEM), and Glancing angle X-ray Diffraction. (XRD) were utilized to evaluate the surface property improvements. The thickness of implanted layers increased by about an order of magnitude when the temperature was elevated from 100 to 6000℃. Higher surface hardness and wear resistance were also obtained in the high tempera-ture implantation. The XRD image showed the presence of nitrides of titanium at the implanted surface.

Mutagenesis of Arabidopsis Thaliana by N^+ Ion Implantation

Ion implantation, as a new biophysically mutagenic technique, has shown a great potential for crop breeding. By analyzing polymorphisms of genomic DNA through RAPD-based DNA analysis, we compared the frequency and efficiency of somatic and germ-line mutations of Arabidopsis thaliana treated with N^＋ ion implantation and γ-rays radiation. Our data support the following conclusions： （1） N^＋ ion implantation can induce a much wider spectrum of mutations than γ-rays radiation does; （2） Unlike the linear correlation between the doses and their effect in γ-rays radiation, the dose-effect correlation in N^＋ ion implantation is nonlinear; （3） Like γ-rays radiation, both somatic and germ-line mutations could be induced by N^＋ ion implantation; and （4） RAPD deletion patterns are usually seen in N^＋ ion implantation induced mutation.

SURFACE ANALYSES OF NITROGEN ION IMPLANTED Ti6Ai4V ALLOY

The techniques for surface analysis including AES,XPS and SIMS were employed to study the chemical composition and bond valence of nitrogen ion implanted surface of surgical implantation service alloy Ti6Al4V.The depth of implanted nitrogen ions and the sputtering rate of argon beams were determined using a profilometer.It was found that the combination of injected nitrogen ions with titanium resulted in the formation of hard TiN particles and the profile of nitrogen concentration approximately displayed gaussian distribution.The total depth of implanted nitrogen is about 350 nm and its maximum concentration appears in the depth of about 140 nm from the surface,in which the concentration ratio of nitrogen to titanium may be up to 1.1.

Experimental and computational study of visible light-induced photocatalytic ability of nitrogen ions-implanted TiO2 nanotubes

Nitrogen-doped TiO2 nanotubes(TNTs)were prepared by ion implantation and anodic oxidation.The prepared samples were applied in photocatalytic(PC)oxidation of methyl blue,rhodamine B,and bisphenol A under light irradiation.To explore the influence of doped ions on the band and electronic structure of TiO2,computer simulations were performed using the VASP code implementing spin-polarized density functional theory(DFT).Both substitutional and interstitial nitrogen atoms were considered.The experimental and computational results propose that the electronic structure of TiO2 was modified because of the emergence of impurity states in the band gap by introducing nitrogen into the lattice,leading to the absorption of visible light.The synergy effects of tubular structures and doped nitrogen ions were responsible for highly efficient and stable PC activities induced by visible and ultraviolet(UV)light.

Improvement of L(+)-Lactic Acid Production of Rhizopus Oryzae by Low-Energy Ions and Analysis of Its Mechanism

The wild type strain Rhizopus oryzae PW352 was mutated by means of nitrogen ion implantation （15 keV, 7.8×10^14 ～ 2.08 ×10^15 ions/cm^2） to find an industrial strain with a higher L（＋）-lactic acid yield, and two mutants RE3303 and RF9052 were isolated. In order to discuss the mechanism primarily, Lactate Dehydrogenase of Rhizopus oryzae was studied. While the two mutants produced L（＋）-lactic acid by 75% more than the wild strain did, their specific activity of Lactate Dehydrogenase was found to be higher than that in the wild strain. The optimum temperature of Lactate Dehydrogenase in Rhizopus oryzae RF9052 was higher. Compared to the wild strain, the Michaelis constant （Km） value of Lactate Dehydrogenase in the mutants was Changed. All these changes show that L（＋）-lactic acid production has a correlation with the specific activity of Lactate Dehydrogenase. The low-energy ions, implanted into the strain, may improve the specific activity of Lactate Dehydrogenase by influencing its gene structure and protein structure.

Morphological and Anatomical Assessment of KDML 105 (Oryza sativa L.spp.indica) and Its Mutants Induced by Low-Energy Ion Beam

Thai jasmine rice KDML 105 is consumed around the world. BKOS, PKOS and TKOS are new cultivars produced from low-energy ion beam induction in KDML 105. The purpose of this study is to compare the morphology and anatomy between KDML 105 and the three new cultivars. Seeds of the four cultivars were germinated and grown in pots until flowering phase. The plants＇ organs were observed and the lengths of culms, ligules, leaves and panicles were measured. Leaf surface area was calculated and numbers of roots, spikelets and tillers were counted. BKOS and PKOS had significantly shorter culms than KDML 105 and TKOS. The largest leaf area was found in KDML 105 followed by TKOS, BKOS and PKOS, respectively. Numbers of roots and tillers in BKOS and TKOS were significantly fewer than those in KDML 105 and PKOS. The number of spikelets per plant in BKOS was the lowest among all cultivars. For anatomical comparison, cross sections of culms and roots were observed. All plants had a similar arrangement of tissues, but the number and size of cells were different. Furthermore, longitudinal sections of culms showed that the lengths of epidermal and parenchyma cells were directly related with the length of the culm. To compare the leaves, both stomata and epidermal cells were counted and the lengths of the guard cells were measured. The lengths of guard cells of BKOS and PKOS were shorter, but the stomatal density and the stomatal index were significantly greater than those of KDML 105. For TKOS, though the length of guard cells was shorter than that in KDML 105, the difference was not significant. However, the stomatal density and stomatal index were significantly higher than those in KDML 105.

Surface Etching and DNA Damage Induced by Low-Energy Ion Irradiation in Yeast

Bio-effects of survival and etching damage on cell surface and DNA strand breaks were investigated in the yeast saccharomyces cerevisiae after exposure by nitrogen ion with an energy below 40 keV. The result showed that 16% of trehalose provided definite protection for cells against vacuum stress compared with glycerol. In contrast to vacuum control, significant morpho- logical damage and DNA strand breaks were observed, in yeast cells bombarded with low-energy nitrogen, by scanning electron microscopy （SEM） and terminal deoxynucleotidyl transferase- mediated dUTP nick end labeling （TUNEL） immunofluorescence assays. Moreover, PI （propidium iodide） fluorescent staining indicated that cell integrity could be destroyed by ion irradiation. Cell damage eventually affected cell viability and free radicals were involved in cell damage as shown by DMSO （dimethyl sulfoxide） rescue experiment. Our primary experiments demonstrated that yeast cells can be used as an optional experimental model to study the biological effects of low energy ions and be applied to further investigate the mechanism（s） underlying the bio-effects of eukaryotic cells.

石墨烯基薄膜的表面改性与电输运性能研究

文章以天然鳞片石墨为原料,采用改进Hummers方法制备氧化石墨烯(graphene oxide,GO)薄膜,再利用氮离子注入和热处理得到表面改性的氮掺杂还原氧化石墨烯(nitrogen-doped reduced graphene oxide,NrGO)薄膜;利用扫描电子显微镜(scanning electron microscope,SEM)、X射线衍射(X-ray diffraction,XRD)、拉曼(Raman)光谱和X射线光电子能谱(X-ray photoelectron spectroscopy,XPS)表征并系统研究氮离子注入对石墨烯基薄膜表面形貌和微观结构的影响。结果表明:氮离子注入会造成石墨烯基薄膜表面层内碳原子的缺失和氮原子的替代掺杂,从而在NrGO薄膜表面层内实现氮掺杂并产生纳米级孔洞;氮掺杂氧化石墨烯(nitrogen-doped graphene oxide,NGO)薄膜表面层氮掺杂量(质量分数)高达10.86%,热处理后的NrGO薄膜表面层氮掺杂量(质量分数)可达9.90%;I-V测试发现,氮离子注入和热处理对石墨烯基薄膜的电输运性能也产生显著影响。

Effects of nitrogen ion implantation on lily pollen germination and the distribution of the actin cytoskeleton during pollen germination

The effects of low energy nitrogen ion implantation on lily (Lilium davidii Duch.) pollen germination and the distribution of the actin cytoskeleton during pollen germination have been studied. Preliminary results showed that the ratio of pollen germination increased from (16.0±1.6)% to (27.0±2.1)% when implanted with nitrogen ions by 100 keV and a dose of 1013 ions/cm2. Further experiments were performed by staining the actin filaments in pollen with rhodamine-phalloidin and detected by using laser confocol microscopy. After hydration for 10 h, the actin filaments in ion implanted pollen grains tended to form thick bundles oriented in parallel or ring shape at the germinal furrow, indicating that the effect of nitrogen ion implantation on the germination of pollen might be mediated by reorganization of the actin cytoskeleton.

Effects of nitrogen ion implantation on Ca^(2+) concentration and membrane potential of pollen cell

The effects of low energy nitrogen ion implantation on Ca2+ concentration and membrane potential of illy (Mum davidii Duch) pollen cell have been studied. The results showed that the Ca2+ concentration was increased when pollen grain was implanted by nitrogen ion with energy 100 keV and dose 1013 ions/cm2. However, the increase of Ca2+ concentration was partly inhibited by the addition of Ca2+ channel inhibitor depending on dose. And nitrogen ion implantation caused depolarization of pollen cell membrane potential. In other words, membrane potential was increased, but the effect decreased by adding Ca2+ channel inhibitor. However, it was still significantly higher than the membrane potential of control cells. It was indicated that the depolarization of cell membrane potential opened the calcium channel on the membrane that caused the increasing of intracel-lular calcium concentration. This might be an earlier step of the effect of low energy nitrogen ion implantation on pollen germination.