Wedge-shaped HfO_(2) buffer layer-induced field-free spin-orbit torque switching of HfO_(2)/Pt/Co structure

Field-free spin-orbit torque(SOT)switching of perpendicular magnetization is essential for future spintronic devices.This study demonstrates the field-free switching of perpendicular magnetization in an HfO_(2)/Pt/Co/TaO_(x) structure,which is facilitated by a wedge-shaped HfO_(2)buffer layer.The field-free switching ratio varies with HfO_(2)thickness,reaching optimal performance at 25 nm.This phenomenon is attributed to the lateral anisotropy gradient of the Co layer,which is induced by the wedge-shaped HfO_(2)buffer layer.The thickness gradient of HfO_(2)along the wedge creates a corresponding lateral anisotropy gradient in the Co layer,correlating with the switching ratio.These findings indicate that field-free SOT switching can be achieved through designing buffer layer,offering a novel approach to innovating spin-orbit device.

Numerical Study and Optimization of CZTS-Based Thin-Film Solar Cell Structure with Different Novel Buffer-Layer Materials Using SCAPS-1D Software

This study explored the performances of CZTS-based thin-film solar cell with three novel buffer layer materials ZnS, CdS, and CdZnS, as well as with variation in thickness of buffer and absorber-layer, doping concentrations of absorber-layer material and operating temperature. Our aims focused to identify the most optimal thin-film solar cell structure that offers high efficiency and lower toxicity which are desirable for sustainable and eco-friendly energy sources globally. SCAPS-1D, widely used software for modeling and simulating solar cells, has been used and solar cell fundamental performance parameters such as open-circuited voltage (), short-circuited current density (), fill-factor() and efficiency() have been optimized in this study. Based on our simulation results, it was found that CZTS solar cell with Cd0.4Zn0.6S as buffer-layer offers the most optimal combination of high efficiency and lower toxicity in comparison to other structure investigated in our study. Although the efficiency of Cd0.4Zn0.6S, ZnS and CdS are comparable, Cd0.4Zn0.6S is preferable to use as buffer-layer for its non-toxic property. In addition, evaluation of performance as a function of buffer-layer thickness for Cd0.4Zn0.6S, ZnS and CdS showed that optimum buffer-layer thickness for Cd0.4Zn0.6S was in the range from 50 to 150nm while ZnS offered only 50 – 75 nm. Furthermore, the temperature dependence performance parameters evaluation revealed that it is better to operate solar cell at temperature 290K for stable operation with optimum performances. This study would provide valuable insights into design and optimization of nanotechnology-based solar energy technology for minimizing global energy crisis and developing eco-friendly energy sources sustainable and simultaneously.

Influence of the lattice parameter of the AlN buffer layer on the stress state of GaN film grown on(111)Si

GaN films grown on(111)Si substrate with different lattice parameters of the AlN buffer layer by metal–organic chemical vapor deposition are studied.The stress states obtained by different test methods are compared and it is found that the lattice parameter of the AlN buffer layer may have a significant effect on the stress state in the initial stage of subsequent GaN film growth.A larger compressive stress is beneficial to improved surface morphology and crystal quality of GaN film.The results of further orthogonal experiments show that an important factor affecting the lattice parameter is the growth rate of the AlN buffer layer.This work may be helpful for realizing simple GaN-on-Si structures and thus reducing the costs of growth processes.

Simulation Study of CuO-Based Solar Cell with Different Buffer Layers Using SCAPS-1D

In copper oxide (CuO) based solar cells, various buffer layers such as CdS, In2S3, WS2 and IGZO have been investigated by solar cell capacitance simulator (SCAPS) in this work. By varying absorber and buffer layer thickness, photovoltaic parameters (open circuit voltage, fill factor, short-circuit current density and efficiency) are determined. The highest efficiency achieved is 19.6% with WS2 buffer layer. The impact of temperature on all CuO-based solar cells is also investigated.

In-situ constructed SnO_(2) gradient buffer layer as a tight and robust interphase toward Li metal anodes in LATP solid state batteries

Li_(1.3)Al_(0.3)Ti_(1.7)(PO_(4))_(3)(LATP),of much interest owing to its high ionic conductivity,superior air stability,and low cost,has been regarded as one of the most promising solid-state electrolytes for next-generation solid-state lithium batteries(SSLBs).Unfortunately,the commercialization of SSLBs is still impeded by severe interfacial issues,such as high interfacial impedance and poor chemical stability.Herein,we proposed a simple and convenient in-situ approach to constructing a tight and robust interface between the Li anode and LATP electrolyte via a SnO_(2)gradient buffer layer.It is firmly attached to the surface of LATP pellets due to the volume expansion of SnO_(2)when in-situ reacting with Li metal,and thus effectively alleviates the physical contact loosening during cycling,as confirmed by the mitigated impedance rising.Meanwhile,the as-formed SnO_(2)/Sn/LixSn gradient buffer layer with low electronic conductivity successfully protects the LATP electrolyte surface from erosion by the Li metal anode.Additionally,the LixSn alloy formed at the Li surface can effectively regulate uniform lithium deposition and suppress Li dendrite growth.Therefore,this work paves a new way to simultaneously address the chemical instability and poor physical contact of LATP with Li metal in developing low-cost and highly stable SSLBs.

有机电致发光器件的Buffer Layer及其金属掺杂

描述了电极与有机层之间的薄层（０．１～ｌｎｍ）ＢｕｆｆｅｒＬａｙｅｒ（缓冲层，特别是ＬｉＦ）对ＯＥＬ器件性能，特别是亮度和效率的提高及其增强机制，评述厂复合物电极及金属掺杂有机物层对ＯＥＬ器件亮度和效率的增强现象。

Effect of Al_2O_3 Buffer Layers on the Properties of Sputtered VO_2 Thin Films

VO_2 thin films were grown on silicon substrates using Al_2O_3 thin films as the buffer layers. Compared with direct deposition on silicon, VO_2 thin films deposited on Al_2O_3 buffer layers experience a significant improvement in their microstructures and physical properties. By optimizing the growth conditions, the resistance of VO_2 thin films can change by four orders of magnitude with a reduced thermal hysteresis of 4 °C at the phase transition temperature. The electrically driven phase transformation was measured in Pt/Si/Al_2O_3/VO_2/Au heterostructures. The introduction of a buffer layer reduces the leakage current and Joule heating during electrically driven phase transitions. The C–V measurement result indicates that the phase transformation of VO_2 thin films can be induced by an electrical field.

Tetraalkyl-substituted zinc phthalocyanines used as anode buffer layers for organic light-emitting diodes

Two soluble tetraalkyl-substituted zinc phthalocyanines(ZnPcs)for use as anode buffer layer materials in tris(8-hydroxyquinoline)aluminum(Alq3)-based organic light-emitting diodes(OLEDs)are presented in this work.The holeblocking properties of these Zn Pc layers slowed the hole injection process into the Alq3 emissive layer greatly and thus reduced the production of unstable cationic Alq3(Alq3^+)species.This led to the enhanced brightness and efficiency when compared with the corresponding properties of OLEDs based on the popular poly-(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS)buffer layer.Furthermore,because of the high thermal and chemical stabilities of these Zn Pcs,a nonaqueous film fabrication process was realized together with improved charge balance in the OLEDs and enhanced OLED lifetimes.

Fabrication of NiO Buffer Layer for YBCO Coated Conductors by Combining Sputtering and SOE Method

In research of YBCO coated conductors, the development of a oxide template for epitaxial growth of YBCO is very important. Matsumoto et al have demonstrated the potential of the surface oxidation epitaxial (SOE) route for formation a cube textured NiO layer on nickel tapes. The epitaxial NiO functions as a buffer layer of chemical reaction between YBCO and nickel, and as a template for the epitaxial growth of YBCO. However, the surface quality of NiO is difficult to control and defects such as crack, spall and deep grooves exist in SOE NiO layer. A new approach combining sputtering and SOE method to obtain crack-free and cube textured NiO layer were reported. Ni tapes prepared by the combination of rolling and recrystallization were used for this work. A coating of Ni was first deposited on the tapes via magnetron sputtering. Then on the coating tapes, continuous and textured NiO layer were achieved by SOE technology.

Elastic Buffering Layer on CuS Enabling High-Rate and Long-Life Sodium-Ion Storage

The latest view suggests the inactive core,surface pulverization,and poly sulfide shuttling effect of metal sulfides are responsible for their low capacity and poor cycling performance in sodium-ion batteries(SIBs).Whereas overcoming the above problems based on conventional nanoengineering is not efficient enough.In this work,erythrocyte-like CuS microspheres with an elastic buffering layer of ultrathin poly aniline(PANI) were synthesized through one-step selfassembly growth,followed by in situ polymerization of aniline.When CuS@PANI is used as anode electrode in SIBs,it delivers high capacity,ultrahigh rate capability(500 mAh gat 0.1 A g,and 214.5 mAh gat 40 A g),and superior cycling life of over 7500 cycles at 20 A g.A series of in/ex situ characterization techniques were applied to investigate the structural evolution and sodium-ion storage mechanism.The PANI swollen with electrolyte can stabilize solid electrolyte interface layer,benefit the ion transport/charge transfer at the PANI/electrolyte interface,and restrain the size growth of Cu particles in confined space.Moreover,finite element analyses and density functional simulations confirm that the PANI film effectively buffers the volume expansion,suppresses the surface pulverization,and traps the poly sulfide.

Magnetic and Structural Properties in Co/Cu/Co Sandwiches with Ni and Cr Buffer Layers

The magnetic and structural properties in Co/Cu/Co sandwiches with Ni and Cr buffer layers were investigated. It was found that the coercivity in Ni layer buffered samples decreases with increasing Ni layer thickness, while that in Cr layer buffered ones increases with increasing Cr layer thickness, leading to a large difference in field sensitivity of their giant magnetoresistance (GMR) properties. X-ray diffraction and high resolution transmission electron microscope images exhibited that there is a strong fcc (111) texture in the samples with Ni buffer layer. But there are only randomly oriented polycrystalline grains in Cr buffered sandwiches. According to atomic force microscope topography, the surface roughness of Cr buffered sandwiches is smaller than that of Ni buffered ones. It is demonstrated that buffer layer influences both magnetic and Structural properties in Co/Cu/Co sandwiches as well as their GMR characteristics.

Tin dioxide buffer layer-assisted efficiency and stability of wide-bandgap inverted perovskite solar cells

Inverted perovskite solar cells(IPSCs) have attracted tremendous research interest in recent years due to their applications in perovskite/silicon tandem solar cells. However, further performance improvements and long-term stability issues are the main obstacles that deeply hinder the development of devices. Herein, we demonstrate a facile atomic layer deposition(ALD) processed tin dioxide(SnO2) as an additional buffer layer for efficient and stable wide-bandgap IPSCs. The additional buffer layer increases the shunt resistance and reduces the reverse current saturation density, resulting in the enhancement of efficiency from 19.23% to 21.13%. The target device with a bandgap of 1.63 eV obtains open-circuit voltage of 1.19 V, short circuit current density of 21.86 mA/cm^(2), and fill factor of 81.07%. More importantly, the compact and stable SnO_(2) film invests the IPSCs with superhydrophobicity, thus significantly enhancing the moisture resistance. Eventually, the target device can maintain 90% of its initial efficiency after 600 h storage in ambient conditions with relative humidity of 20%–40% without encapsulation. The ALD-processed SnO_(2) provides a promising way to boost the efficiency and stability of IPSCs, and a great potential for perovskite-based tandem solar cells in the near future.

Improved performance of polymer solar cells by using inorganic, organic, and doped cathode buffer layers

The interface between the active layer and the electrode is one of the most critical factors that could affect the device performance of polymer solar cells. In this work, based on the typical poly(3-hexylthiophene):[6,6]-phenyl C61-butyric acid methyl ester(P3HT:PCBM) polymer solar cell, we studied the effect of the cathode buffer layer(CBL) between the top metal electrode and the active layer on the device performance. Several inorganic and organic materials commonly used as the electron injection layer in an organic light-emitting diode(OLED) were employed as the CBL in the P3HT:PCBM polymer solar cells. Our results demonstrate that the inorganic and organic materials like Cs_2CO_3, bathophenanthroline(Bphen), and 8-hydroxyquinolatolithium(Liq) can be used as CBL to efficiently improve the device performance of the P3HT:PCBM polymer solar cells. The P3HT:PCBM devices employed various CBLs possess power conversion efficiencies(PCEs) of 3.0%–3.3%, which are ca. 50% improved compared to that of the device without CBL. Furthermore, by using the doped organic materials Bphen:Cs_2CO_3 and Bphen:Liq as the CBL, the PCE of the P3HT:PCBM device will be further improved to 3.5%, which is ca. 70% higher than that of the device without a CBL and ca. 10% increased compared with that of the devices with a neat inorganic or organic CBL.

First-principles study of the growth and diffusion of B and N atoms on the sapphire surface with h-BN as the buffer layer

Currently,the preparation of large-size and high-quality hexagonal boron nitride is still an urgent problem.In this study,we investigated the growth and diffusion of boron and nitrogen atoms on the sapphire/h-BN buffer layer by first-principles calculations based on density functional theory.The surface of the single buffer layer provides several metastable adsorption sites for free B and N atoms due to exothermic reaction.The adsorption sites at the ideal growth point for B atoms have the lowest adsorption energy,but the N atoms are easily trapped by the N atoms on the surface to form N-N bonds.With the increasing buffer layers,the adsorption process of free atoms on the surface changes from exothermic to endothermic.The diffusion rate of B atoms is much higher than that of the N atoms thus the B atoms play a major role in the formation of B-N bonds.The introduction of buffer layers can effectively shield the negative effect of sapphire on the formation of B-N bonds.This makes the crystal growth on the buffer layer tends to two-dimensional growth,beneficial to the uniform distribution of B and N atoms.These findings provide an effective reference for the h-BN growth.

Geo-engineered buffer capacity of two-layered absorbing system under the impact of rock avalanches based on Discrete Element Method

Many rock avalanches were triggered by the Wenchuan earthquake on May 12,2008 in southwest China.Protection galleries covered with a single soil layer are usually used to protect against rockfall.Since one-layer protection galleries do not have sufficient buffer capacity,a two-layered absorbing system has been designed.This study aims to find whether an expanded poly-styrol(EPS) cushion,which is used in the soil-covered protection galleries for shock absorption,could be positioned under dynamic loadings.The dynamic impacts of the two-layered absorbing system under the conditions ofrock avalanches are numerically simulated through a 2D discrete element method.By selecting reasonable parameters,a series of numerical experiments were conducted to find the best combination for the twolayered absorbing system.The values of the EPS layer area as a percentage of the total area were set as 0%(S1),22%(S2),and 70%(S3).22% of the area of the EPS layer was found to be a reasonable value,and experiments were conducted to find the best position of the EPS layer in the two-layered absorbing system.The numerical results yield useful conclusions regarding the interaction between the impacting avalanches and the two-layered absorbing system.The soil layer can absorb the shock energy effectively and S2(0.4-m thick EPS cushion covered with soillayer) is the most efficient combination,which can reduce the impact force,compared with the other combinations.

Preparation and characterization of Cd_(1-x)Zn_xS buffer layers for thin film solar cells

Cd1-xZnxS(x = 0, 0.1, 0.2, 0.3, 1.0) thin films have been grown successfully on soda-lime glass substrates by chemical bath deposition technique as a very promising buffer layer material for optoelectronic device applications. The composition, structural properties, surface morphology, and optical properties of Cd1-xZnxS thin films were characterized by energy dispersive analysis of X-ray technique (EDAX), X-ray diffraction (XRD), scanning electron microscopy (SEM), and UV-Vis spectrophotometer techniques, respectively. The annealed films were observed to possess the deficient sulfur composition. The results of XRD show that the Cd1-xZnxS (x = 0.1) thin film annealed at 450 ℃ forms hexagonal (wurtzite) structure with lattice parameters a = 0.408814 nm, c = 0.666059 nm, and its average grain size is 24.9902 nm. The diffraction peaks become strong with the increasing annealing temperatures. The surface of Cd1-xZnxS (x = 0.1) thin film annealed at 450℃ is uninterrupted and homogenous as compared to other temperatures. From optical properties, it is observed that the presence of small amount of Zn results in marked changes in the optical band gap of CdS. The band gaps of the Cd1-xZnxS thin films vary from 2.42 to 3.51 eV as composition varies from x = 0.0 to 1.0.

Pulsed Laser Deposition ZnS Buffer Layers for CIGS Solar Cells

多晶的 ZnS 电影被搏动的激光免职( PLD )在 20 ， 200 ， 400 ，和 600 °C 的不同底层温度在不同生长条件下面在石英玻璃底层上准备，它是扔的化学洗澡( CBD )的一种合适的选择 CdS 作为在 Cu 的缓冲区层(在里面， Ga ) Se 2(帝国参谋总长)太阳能电池。X 光检查衍射研究显示这些电影与锌闪锌矿结构是多晶的，他们沿着立方的阶段 β-ZnS (111 ) 展出优先的取向方向，哪个与由 ZnS 电影由脉搏 plating 技术扔了的 Murali 的 wurtzite 结构的结论的冲突与 wurtzite 是多晶的结构。成年电影的拉曼系列在通常在立方的阶段 β-ZnS 混合物观察的约 350 厘米 −1, 显示出一个 1 模式。平面并且代表性的形态学被扫描电子观察显微镜。稠密的、光滑的、一致谷物通过 PLD 技术在石英玻璃底层上被形成。PLD 扔的 ZnS 的谷物尺寸是比由常规 CBD 方法的 CdS 的小得多的，它作为有害房间性能的主要原因被分析。ZnS 电影的作文被 X 光检查荧光也测量。在这个工作获得的典型 ZnS 电影在 stoichiometric 和仅仅小数量附近 S 富有。在不同温度的精力乐队差距被吸收光谱学测量获得，它与增加免职温度从 3.2 eV 增加到 3.7 eV。ZnS 让一个更宽的精力乐队比 CdS (2.4 eV ) 豁开，它能提高光电的房间的蓝反应。这些结果出现这些代用品缓冲区层材料高质量通过一种所有干燥的技术被准备，它能在帝国参谋总长薄电影太阳能电池的制造被使用。

High Performance for Cu(In,Ga)Se2 Quaternary System-Based Solar Cells with Alternative Buffer Layers

In this study, the authors investigated the performance of different buffer layers through the electrical parameters such as Jsc, Voc, QE and η of the quaternary system Cu(In,Ga)Se2 solar cells. The performance of Cu(In,Ga)Se2solar cells has been modeled and numerically simulated by using the SCAPS- 1D device simulation tool. The cells with a ZnSe, Zn(O,S) and (Zn,Mg)O buffer layers were compared with the reference CdS buffer layer. The investigation of ZnSe, Zn(O, S) and (Zn,Mg)O-based cells to substitute the traditional CdS in the future shows that the ZnSe-buffer layer is a potential material to replace CdS, which revealed the best efficiency of 20.76%, the other electrical parameters are: JSC = 34.6 mA/cm2, VOC = 0.76 V and FF = 79.6%. The losses as a function of the temperature are estimated at 0.1%/K, among all kinds of buffer layers studied. We have also shown that the use of a high band-gap buffer layer is necessary to obtain a better short-circuit current density JSC. From our results, we note that the chalcogenide solar cells with Zn-based alternative buffer layer have almost the same stability thatthe traditional CdS buffer layer solar cells have.

Characterization of GaN Buffer Layers and Its Epitaxial Layers Grown by MOCVD

Low pressure MOCVD has been used to investigate the properties of low temperature buffer layer deposition conditions and their influence on the properties of high temperature GaN epilayers grown subsequently. It is found that the surface morphology of the as grown buffer layer after thermal annealing at 1 030 ℃ and 1 050 ℃ depends strongly on the thickness of the buffer layer. In particular when a thick buffer layer is used, large trapezoidal nuclei are formed after annealing.

Performance improvement of MEH-PPV:PCBM solar cells using bathocuproine and bathophenanthroline as the buffer layers

In this work, bathocuproine (BCP) and bathophenanthroline (Bphen), commonly used in small-molecule organic solar cells (OSCs), are adopted as the buffer layers to improve the performance of the polymer solar cells (PSCs) based on poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV): [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) bulk heterojunction. By inserting BCP or Bphen between the active layer and the top cathode, all the performance parameters are dramatically improved. The power conversion efficiency is increased by about 70% and 120% with 5-nm BCP and 12-nm Bphen layers, respectively, when compared with that of the devices without any buffer layer. The performance enhancement is attributed to BCP or Bphen (i) increasing the optical field, and hence the absorption in the active layer, (ii) effectively blocking the excitons generated in MEH-PPV from quenching at organic/aluminum (Al) interface due to the large band-gap of BCP or Bphen, which results in a significant reduction in series resistance (Rs), and (iii) preventing damage to the active layer during the metal deposition. Compared with the traditional device using LiF as the buffer layer, the BCP-based devices show a comparable efficiency, while the Bphen-based devices show a much larger efficiency. This is due to the higher electron mobility in Bphen than that in BCP, which facilitates the electron transport and extraction through the buffer layer to the cathode.