We investigate the growth of InP-on-GaAs combined with the advantages of double low-temperature （LT） buffers and strained layer surperlattices （SLSs）. It is found that LT-InP/LT-GaAs double LT buffers are more eff...We investigate the growth of InP-on-GaAs combined with the advantages of double low-temperature （LT） buffers and strained layer surperlattices （SLSs）. It is found that LT-InP/LT-GaAs double LT buffers are more effective for strain accommodation than a LT-InP single buffer in InP-on-GaAs. On the other hand, there is an optimal thickness for LT-GaAs for a given thickness of the LT-InP layer,at which the double LT buffers can reach the best state for strain ad- justment. Furthermore,the position of insertion of SLSs should be carefully designed because the distance above the InP/ buffer interface plays an important role in threading dislocation interactions for dislocation reduction. As a result, the density of threading dislocations in the InP epilayer is markedly reduced. X-ray diffraction measurements show that the full width at half maximum of the ω/2θ rocking curve for the 2μm-thick InP epilayer is less than 200.展开更多
In this work,phase and morphology-tuned MoO_(3) nanostructures are synthesized through a novel modified co-precipitation method,and their electrochemical properties are investigated.For the first time,such a simple su...In this work,phase and morphology-tuned MoO_(3) nanostructures are synthesized through a novel modified co-precipitation method,and their electrochemical properties are investigated.For the first time,such a simple surfactant-assisted synthesis process aided by minor temperature variations is reported which results in phase transition of the nanoparticles from h-MoO_(3) nano-rods to a-MoO_(3) nano-flakes.The nanostructures thus developed are highly porous and crystalline with significantly large specific surface area as compared to previous literature.The theoretical bandgap energy of the optimized sample calculated using Perdew-Zunger local density approximation(LDA) is in good agreement with the experimental findings.An overall structural,morphological,and surface-behavioural analysis predicts the electrochemical superiority in 2D a-MoO_(3).The cyclic voltammetry and galvano-potentiometry measurements of 2D a-MoO_(3) in the potential window of-0.6 V to +0.2 V present the highest pseudosupercapacitive response with a maximum specific capacitance of 829 F g^(-1)at 2 A g^(-1)as compared to h-MoO_(3) (452 F g^(-1)) and h@a-MoO_(3) (783 F g^(-1)).Thus,the MoO_(3) 2D nanostructures synthesized through our novel synthesis technique display excellent specific capacitance as compared to previous reported data.Additionally,a-MoO_(3) exhibits a galvanostatic charging-discharging cyclic stability of about 91%after 2000 cycles,indicating that it can serve as an excellent electrode material for supercapacitors.A solid-state asymmetric supercapacitor device is successfully constructed using a-MoO_(3) which can light up 4 red LEDs for 10 s.The specific energy density of the device reaches a maximum value of 36.3 W h kg^(-1)at the power density of 50 W kg^(-1).展开更多
A buffer sharing scheme need to meet many competing objectives like robustness to changes in traffic conditions, fairness, efficiency, implementation simplicity, etc. Of the existing techniques, Push Out (PO) is optim...A buffer sharing scheme need to meet many competing objectives like robustness to changes in traffic conditions, fairness, efficiency, implementation simplicity, etc. Of the existing techniques, Push Out (PO) is optimum in terms of overall cell loss performance, but its delay performance is worse than that of all other methods for the multiple space priority. Another scheme named Dynamic Threshold (DT) is robust and adaptive which has good delay performance. A hybrid technique named Dynamic Threshold wi...展开更多
Unintentionally doped AlGaN thin films are grown on c-plane(0001) sapphire substrate by metal-organic chemical vapor deposition, and low-temperature AlN is deposited onto sapphire substrate used as a bu?er layer. AlGa...Unintentionally doped AlGaN thin films are grown on c-plane(0001) sapphire substrate by metal-organic chemical vapor deposition, and low-temperature AlN is deposited onto sapphire substrate used as a bu?er layer. AlGaN metal-semiconductor-metal ultraviolet photodetectors with Ni/Au interdigitated contact electrodes are then fabricated by lift-off technology. The dark current of the AlGaN photodetectors is 5.61×10-9 A at 2-V applied bias and the peak response occurrs at 294 nm.展开更多
文摘We investigate the growth of InP-on-GaAs combined with the advantages of double low-temperature （LT） buffers and strained layer surperlattices （SLSs）. It is found that LT-InP/LT-GaAs double LT buffers are more effective for strain accommodation than a LT-InP single buffer in InP-on-GaAs. On the other hand, there is an optimal thickness for LT-GaAs for a given thickness of the LT-InP layer,at which the double LT buffers can reach the best state for strain ad- justment. Furthermore,the position of insertion of SLSs should be carefully designed because the distance above the InP/ buffer interface plays an important role in threading dislocation interactions for dislocation reduction. As a result, the density of threading dislocations in the InP epilayer is markedly reduced. X-ray diffraction measurements show that the full width at half maximum of the ω/2θ rocking curve for the 2μm-thick InP epilayer is less than 200.
文摘In this work,phase and morphology-tuned MoO_(3) nanostructures are synthesized through a novel modified co-precipitation method,and their electrochemical properties are investigated.For the first time,such a simple surfactant-assisted synthesis process aided by minor temperature variations is reported which results in phase transition of the nanoparticles from h-MoO_(3) nano-rods to a-MoO_(3) nano-flakes.The nanostructures thus developed are highly porous and crystalline with significantly large specific surface area as compared to previous literature.The theoretical bandgap energy of the optimized sample calculated using Perdew-Zunger local density approximation(LDA) is in good agreement with the experimental findings.An overall structural,morphological,and surface-behavioural analysis predicts the electrochemical superiority in 2D a-MoO_(3).The cyclic voltammetry and galvano-potentiometry measurements of 2D a-MoO_(3) in the potential window of-0.6 V to +0.2 V present the highest pseudosupercapacitive response with a maximum specific capacitance of 829 F g^(-1)at 2 A g^(-1)as compared to h-MoO_(3) (452 F g^(-1)) and h@a-MoO_(3) (783 F g^(-1)).Thus,the MoO_(3) 2D nanostructures synthesized through our novel synthesis technique display excellent specific capacitance as compared to previous reported data.Additionally,a-MoO_(3) exhibits a galvanostatic charging-discharging cyclic stability of about 91%after 2000 cycles,indicating that it can serve as an excellent electrode material for supercapacitors.A solid-state asymmetric supercapacitor device is successfully constructed using a-MoO_(3) which can light up 4 red LEDs for 10 s.The specific energy density of the device reaches a maximum value of 36.3 W h kg^(-1)at the power density of 50 W kg^(-1).
文摘A buffer sharing scheme need to meet many competing objectives like robustness to changes in traffic conditions, fairness, efficiency, implementation simplicity, etc. Of the existing techniques, Push Out (PO) is optimum in terms of overall cell loss performance, but its delay performance is worse than that of all other methods for the multiple space priority. Another scheme named Dynamic Threshold (DT) is robust and adaptive which has good delay performance. A hybrid technique named Dynamic Threshold wi...
基金supported by the National Natural Science Foundation of China(No.61006052)the Fundamental Research Funds for the Central Universities(No.K5051325009)
文摘Unintentionally doped AlGaN thin films are grown on c-plane(0001) sapphire substrate by metal-organic chemical vapor deposition, and low-temperature AlN is deposited onto sapphire substrate used as a bu?er layer. AlGaN metal-semiconductor-metal ultraviolet photodetectors with Ni/Au interdigitated contact electrodes are then fabricated by lift-off technology. The dark current of the AlGaN photodetectors is 5.61×10-9 A at 2-V applied bias and the peak response occurrs at 294 nm.
