Modeling of the drain-induced barrier lowering effect and optimization for a dual-channel 4H silicon carbide metal semiconductor field effect transistor

A new analytical model to describe the drain-induced barrier lowering （DIBL） effect has been obtained by solving the two-dimensional （2D） Poisson＇s equation for the dual-channel 4H-SiC MESFET （DCFET）. Using this analytical model, we calculate the threshold voltage shift and the sub-threshold slope factor of the DCFET, which characterize the DIBL effect. The results show that they are significantly dependent on the drain bias, gate length as well as the thickness and doping concentration of the two channel layers. Based on this analytical model, the structure parameters of the DCFET have been optimized in order to suppress the DIBL effect and improve the performance.

Effect of Glucose-lowering of Heteropolytungstogermanate β-K_6H[GeW_9V_3O_(40)]·9H_2O

Preliminary tests in rats have shown that the title complex is an efficient insulin mimic, which may be the first example of polyoxomatalates possessing insulin mimetic activity.

Effect of Wave Accessibility on Lower Hybrid Wave Current Drive in Experimental Advanced Superconductor Tokamak with H-Mode Operation

The effect of the wave accessibility condition on the lower hybrid cm＇rent drive in the experimental advanced superconductor Tokamak （EAST） plasma with H-mode operation is studied. Based on a simplified model, a mode conversion layer of the lower hybrid wave between the fast wave branch and the slow wave branch is proved to exist in the plasma periphery for typical EAST H-mode parameters. Under the framework of the lower hybrid wave simulation code （LSC）, the wave ray trajectory and the associated current drive are calculated numerically. The results show that the wave accessibility condition plays an important role on the lower hybrid current drive in EAST plasma. For wave rays with parallel refractive index n｜｜= 2.1 or n｜｜ = 2.5 launched from the outside midplane, the wave rays may penetrate the core plasma due to the toroida] geometry effect, while numerous reflections of the wave ray trajectories in the plasma periphery occur. However, low current drive efficiency is obtained. Meanwhile, the wave accessibility condition is improved if a higher confined magnetic field is applied. The simulation results show that for plasma parameters under present EAST H-mode operation, a significant lower hybrid wave current drive could be obtained for the wave spectrum with peak value n｜｜ = 2.1 if a toroidal magnetic field BT =2.5 T is applied.

Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation

Total ionizing dose responses of different transistor geometries after being irradiated by ^（60）Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator（PD SOI） technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor（nMOSFET） is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect（RINCE）.The analysis based on a charge sharing model and three-dimensional technology computer aided design（TCAD） simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.

Effect of self-management on lower urinary tract symptoms and life quality of benign prostatic hyperplasia patients

Objective To evaluate the efficacy of self-management to improve the lower urinary tract symptoms ( LUTS) and life quality in benign prostatic

为一只双隧道的 4H 硅碳化物金属半导体地效果晶体管降低效果和优化的导致排水管的障碍当模特儿

A new analytical model to describe the drain-induced barrier lowering(DIBL) effect has been obtained by solving the two-dimensional(2D) Poisson’s equation for the dual-channel 4H-SiC MESFET(DCFET).Using this analytical model,we calculate the threshold voltage shift and the sub-threshold slope factor of the DCFET,which characterize the DIBL effect.The results show that they are significantly dependent on the drain bias,gate length as well as the thickness and doping concentration of the two channel layers.Based on this analytical model,the structure parameters of the DCFET have been optimized in order to suppress the DIBL effect and improve the performance.

Simulation of electrical characteristics and structural optimization for small-scaled dual-gate GeOI MOSFET with high-k gate dielectric

The influences of the main structure and physical parameters of the dual-gate GeOl MOSFET on the device performance are investigated by using a TCAD 2D device simulator. A reasonable value range of germanium （Ge） channel thickness, doping concentration, gate oxide thickness and permittivity is determined by analyzing the on-state current, off-state current, short channel effect （SCE） and drain-induced barrier lowering （DIBL） effect of the GeOI MOSFET. When the channel thickness and its doping concentration are 10-18 nm and （5-9）×1017 cm-3, and the equivalent oxide thickness and permittivity of the gate dielectric are 0.8-1 nm and 15-30, respectively, excellent device performances of the small-scaled GeOI MOSFET can be achieved： on-state current of larger than 1475 μA/μm, off-state current of smaller than 0.1μA/μm, SCE-induced threshold-voltage drift of lower than 60 mV and DIBL-induced threshold-voltage drift of lower than 140 mV.

Biological activity studies of the novel glucagon-like peptide-1 derivative HJ07

AIM: To identify the glucose lowering ability and chronic treatment effects of a novel coumarin-glucagon-like peptide-1(GLP-1) conjugate HJ07. METHOD: A receptor activation experiment was performed in HEK 293 cells and the glucose lowering ability was evaluated with hypoglycemic duration and glucose stabilizing tests. Chronic treatment was performed by daily injection of exendin-4, saline, and HJ07. Body weight and HbA1 c were measured every week, and an intraperitoneal glucose tolerance test was performed before treatment and after treatment. RESULTS: HJ07 showed well-preserved receptor activation efficacy. The hypoglycemic duration test showed that HJ07 possessed a long-acting, glucose-lowering effect and the glucose stabilizing test showed that the antihyperglycemic activity of HJ07 was still evident at a predetermined time(12 h) prior to the glucose challenge(0 h). The long time glucose-lowering effect of HJ07 was better than native GLP-1 and exendin-4. Furthermore, once daily injection of HJ07 to db/db mice achieved long-term beneficial effects on HbA1 c lowering and glucose tolerance. CONCLUSION: The biological activity results of HJ07 suggest that HJ07 is a potential long-acting agent for the treatment of type 2 diabetes.

Effects of acupuncture at stellate ganglion on lower limb atherosclerosis of early diabetes mellitus

Objective To compare the efficacy between acupuncture at stellate ganglion combined with intravenous administration of alprostadil and simple intravenous administration of alprostadil on lower limb atherosclerosis of early diabetes mellitus.Methods Sixty patients of lower limb atherosclerosis of early diabetes mellitus were randomly divided into an observation group and a