The effect of high-temperature annealing on the yellow and blue luminescence of the undoped GaN is investi- gated by photoluminescenee (PL) and x-ray photoelectron spectroscopy (XPS). It is found that the band-edg...The effect of high-temperature annealing on the yellow and blue luminescence of the undoped GaN is investi- gated by photoluminescenee (PL) and x-ray photoelectron spectroscopy (XPS). It is found that the band-edge emission in the GaN apparently increases, and the yellow luminescence (YL) and blue luminescence (BL) bands dramatically decrease after annealing at 700℃. At the annealing temperature higher than 900℃, the YL and BL intensities show an enhancement for the nitrogen annealed GaN. This fact should be attributed to the increment of the Ga and N vacancies in the GaN decomposition. However, the integrated PL intensity of the oxygen an- nealed GaN decreases at the temperature ranging from 900℃ to 1000℃. This results from the capture of many photo-generated holes by high-density surface states. XPS characterization confirms that the high-density surface states mainly originate from the incorporation of oxygen atoms into GaN at the high annealing temperature, and even induces the 0.34eV increment of the upward band bending for the oxygen annealed GaN at 1000℃.展开更多
In this paper,the influence of crystal-field on the Luminescence properties of Eu^(2+) in complex oxides are studied theoretically by using purely electrostatic model,the dependence of the 4f^65d levels on Eu-O bond d...In this paper,the influence of crystal-field on the Luminescence properties of Eu^(2+) in complex oxides are studied theoretically by using purely electrostatic model,the dependence of the 4f^65d levels on Eu-O bond distance is given.Quantum chemistry calculation shows that the splitting extent of 4f^65d energy band in cubic or in octahedral fields will be inversely proportional to R^5,where R is the distance of Eu^(2+) to oxygen ligand.The value of R affects slightly the location of the centre of 4f^65d energy band.According to the exper- imental spectrum data,we have discussed the influence of the host chemical composition,the replaced sites of Eu^(2+) and degree of covalency of Eu-O bond on luminescence properties of Eu^(2+).Some regularity of fluorescence spectrum was observed. In alkali-alkaline earth-phosphates,the splitting extent of 4f^65d band (△E) becomes smaller as the Eu-O bond distance (R) increases.In Na_(3-x)(PO_4)_(1-x)(SO_4)_x and Na_(2-x)CaSi_(1-x)P_xO_4 hosts,d-d emission peak of Eu^(2+) will shift to shorter wavelength with the increase of x's value. The crystal structure data show that Eu^(2+) in K_2Mg_2(SO_4)_3 is affected more strongly by crystal-field and covalancy than in KMgF_3,so K_2Mg_2(SO_4)_3:Eu^(2+) emits blue light (E_(em)~m=400nm) and KMgF_3:Eu^(2+) produces ultraviolet fluorescence.展开更多
The luminescent enhancement effect of Na_5Eu(MoO_4)_4 by doping(WO_4)^(2-) has been studied. When the value x in Na_5Eu(Mo_(1-x)W_xO_4)_4 is in 0<x<0.21,its photoluminescent spectrum is near to that of Na_5Eu(Mo...The luminescent enhancement effect of Na_5Eu(MoO_4)_4 by doping(WO_4)^(2-) has been studied. When the value x in Na_5Eu(Mo_(1-x)W_xO_4)_4 is in 0<x<0.21,its photoluminescent spectrum is near to that of Na_5Eu(MoO_4)_4,but its luminescent intensity increases.When x=0.033,the intensity is increased by about 30%.According to the X-ray diffraction analysis,W ions get into the lattice and occupy the sites of the Mo ions.The change of crystal environment of Eu^(3+) may result in the luminescent enhancement.展开更多
From different reports, it (AZO) and indium-doped including usage areas. We nanocrystalline films with is realized that there is a need to consider all sides of aluminum-doped zinc oxide zinc oxide (IZO) thin film...From different reports, it (AZO) and indium-doped including usage areas. We nanocrystalline films with is realized that there is a need to consider all sides of aluminum-doped zinc oxide zinc oxide (IZO) thin films with their optical, luminescence and surface properties establish an assessment to carry out further information to summarize AZO and IZO impact of the layer number.展开更多
We demonstrate that the filamentation process is strongly influenced by the polarization state of the driver laser. When the laser polarization changes from linear to circular, the critical power for the self-focusing...We demonstrate that the filamentation process is strongly influenced by the polarization state of the driver laser. When the laser polarization changes from linear to circular, the critical power for the self-focusing of a Ti:Sapphire laser (800 nm, 40 fs) in air increases from about 9.6 ± 1.0 to 14.9± 1.5 GW, while the second nonlinear refractive index n2 of air decreases from 9.9 × 10-2o to 6.4 ×10-20 cm2/W. We also demonstrate that the luminescence from the neutral nitrogen molecules at 337 nm is dependent on both the laser intensity and plasma density inside the filament.展开更多
基金Supported by the National Basic Research Program of China under Grant Nos 2011CB301900,2012CB619200 and 2012CB619304the High-Technology Research and Development Program of China under Grant Nos 2014AA032605 and 2015AA033305+4 种基金the National Natural Science Foundation of China under Grant Nos 60990311,61274003,61422401,51461135002,60936004,61176063 and 61334009the Natural Science Foundation of Jiangsu Province under Grant Nos BK2011010 and BK20141320the Scientific Innovation Research of College Graduate in Jiangsu Province under Grant No CXLX12.0049a Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutionsthe Solid State Lighting and Energy-saving Electronics Collaborative Innovation Center
文摘The effect of high-temperature annealing on the yellow and blue luminescence of the undoped GaN is investi- gated by photoluminescenee (PL) and x-ray photoelectron spectroscopy (XPS). It is found that the band-edge emission in the GaN apparently increases, and the yellow luminescence (YL) and blue luminescence (BL) bands dramatically decrease after annealing at 700℃. At the annealing temperature higher than 900℃, the YL and BL intensities show an enhancement for the nitrogen annealed GaN. This fact should be attributed to the increment of the Ga and N vacancies in the GaN decomposition. However, the integrated PL intensity of the oxygen an- nealed GaN decreases at the temperature ranging from 900℃ to 1000℃. This results from the capture of many photo-generated holes by high-density surface states. XPS characterization confirms that the high-density surface states mainly originate from the incorporation of oxygen atoms into GaN at the high annealing temperature, and even induces the 0.34eV increment of the upward band bending for the oxygen annealed GaN at 1000℃.
文摘In this paper,the influence of crystal-field on the Luminescence properties of Eu^(2+) in complex oxides are studied theoretically by using purely electrostatic model,the dependence of the 4f^65d levels on Eu-O bond distance is given.Quantum chemistry calculation shows that the splitting extent of 4f^65d energy band in cubic or in octahedral fields will be inversely proportional to R^5,where R is the distance of Eu^(2+) to oxygen ligand.The value of R affects slightly the location of the centre of 4f^65d energy band.According to the exper- imental spectrum data,we have discussed the influence of the host chemical composition,the replaced sites of Eu^(2+) and degree of covalency of Eu-O bond on luminescence properties of Eu^(2+).Some regularity of fluorescence spectrum was observed. In alkali-alkaline earth-phosphates,the splitting extent of 4f^65d band (△E) becomes smaller as the Eu-O bond distance (R) increases.In Na_(3-x)(PO_4)_(1-x)(SO_4)_x and Na_(2-x)CaSi_(1-x)P_xO_4 hosts,d-d emission peak of Eu^(2+) will shift to shorter wavelength with the increase of x's value. The crystal structure data show that Eu^(2+) in K_2Mg_2(SO_4)_3 is affected more strongly by crystal-field and covalancy than in KMgF_3,so K_2Mg_2(SO_4)_3:Eu^(2+) emits blue light (E_(em)~m=400nm) and KMgF_3:Eu^(2+) produces ultraviolet fluorescence.
文摘The luminescent enhancement effect of Na_5Eu(MoO_4)_4 by doping(WO_4)^(2-) has been studied. When the value x in Na_5Eu(Mo_(1-x)W_xO_4)_4 is in 0<x<0.21,its photoluminescent spectrum is near to that of Na_5Eu(MoO_4)_4,but its luminescent intensity increases.When x=0.033,the intensity is increased by about 30%.According to the X-ray diffraction analysis,W ions get into the lattice and occupy the sites of the Mo ions.The change of crystal environment of Eu^(3+) may result in the luminescent enhancement.
文摘From different reports, it (AZO) and indium-doped including usage areas. We nanocrystalline films with is realized that there is a need to consider all sides of aluminum-doped zinc oxide zinc oxide (IZO) thin films with their optical, luminescence and surface properties establish an assessment to carry out further information to summarize AZO and IZO impact of the layer number.
基金supported in part by the National Natural Science Foundation of China(Nos.61625501,61427816,and 61235003)the National Basic Research Program of China(No.2014CB921300)+1 种基金the Open Fund of the State Key Laboratory of High Field Laser Physics(SIOM)the Program for JLU Science and Technology Innovative Research Team(JLUSTIRT)(No.2017TD-21)
文摘We demonstrate that the filamentation process is strongly influenced by the polarization state of the driver laser. When the laser polarization changes from linear to circular, the critical power for the self-focusing of a Ti:Sapphire laser (800 nm, 40 fs) in air increases from about 9.6 ± 1.0 to 14.9± 1.5 GW, while the second nonlinear refractive index n2 of air decreases from 9.9 × 10-2o to 6.4 ×10-20 cm2/W. We also demonstrate that the luminescence from the neutral nitrogen molecules at 337 nm is dependent on both the laser intensity and plasma density inside the filament.