Effect of seed layers on the static and dynamic magnetic properties of CoIr films with negative effective magnetocrystalline anisotropy

The c-axis oriented hcp-Co_(81)Ir_(19)magnetic films were prepared on different seed layers(Ni,Cu,Ir,Pt,Au,and No seed).We systematically investigated the impact that surface-free energy and strain energy have on the orientation and defects and/or internal stress of the grains by increasing the lattice mismatch ratio.Moreover,the initial permeability and the natural resonance frequency were discussed in great detail using a comparison between calculated values and experimental values.We found that the almost unchanged 4πM_(s) andμ_(i) are not affected,while the changed H_(c),intrinsic K_(grain),and f_(r) are strongly dependent on the seed layer and seed layer material.Moreover,the extracted damping constant is sensitive to the defects and/or internal stress and orientation of the grains.Therefore,the soft magnetic properties and microwave properties are adjusted and optimized by seed layers with different materials.

Magnetic Films on Self-assembled Nanospheres

1 Results Nanoparticle media using arrays of monodisperse nanoparticles with high magneticanisotropy are assumed to be the ideal future magnetic recording media. However,key requirements like control of the magnetic anisotropy orientation along with magnetic domain isolation have not been achieved so far. Here, we report on a combination of a two-dimensional topographic pattern formed of self-assembled nanoparticles with sizes as small as 20 nm and magnetic multilayer film deposition[1]. The so formed n...

High Coercivity Sr-ferrite Magnetic Thin Films Induced by Various Underlayers

Three kinds of oxide underlayers, namely SiO2, ZnO and A12O3, were deposited prior to the sputtering of Sr-ferrite films. respectively, in order to induce the optimum grain morphology and the texture of the films. A Sr-ferrite film with an easy axis in-plane orientation was induced by SiO2 underlayer. In contrast, it prefers to be perpendicular to film plane for the cases of ZnO and A12O3 underlayers. The optimum magnetic properties of the former film along film plane are: 4πMr=1.7 kG, iHc=5.35 kOe, and Sq=0.59, which are mainly dominated by the exchange coupling effect, determined by Wohlfarth’s remanence analysis. among grains. While those for the films with an easy axis perpendicular to film plane can be as high as 4πMr=3.72 kG, iHc=6.42 kOe, and Sq=0.82, which are mainly dominated by the magnetostatic interaction among grains.

The 50 nm-thick yttrium iron garnet films with perpendicular magnetic anisotropy

Yttrium iron garnet(YIG) films possessing both perpendicular magnetic anisotropy(PMA) and low damping would serve as ideal candidates for high-speed energy-efficient spintronic and magnonic devices.However,it is still challenging to achieve PMA in YIG films thicker than 20 nm,which is a major bottleneck for their development.In this work,we demonstrate that this problem can be solved by using substrates with moderate lattice mismatch with YIG so as to suppress the excessive strain-induced stress release as increasing the YIG thickness.After carefully optimizing the growth and annealing conditions,we have achieved out-of-plane spontaneous magnetization in YIG films grown on sGGG substrates,even when they are as thick as 50 nm.Furthermore,ferromagnetic resonance and spin pumping induced inverse spin Hall effect measurements further verify the good spin transparency at the surface of our YIG films.

Effect of hydrogen plasma implantation on the micro-structure and magnetic properties of hcp-Co_(80)^(57)Fe_(4)Ir_(16)thin films

We present detailed investigations of structural and static/dynamic magnetic properties of hydrogenated hcp-Co_(80)^(57)Fe_(4)Ir_(16) soft magnetic thin films.Two different kinds of defects,i.e.,destructive and non-destructive,were demonstrated by controlling the negative bias voltage of the hydrogenation process.Our results show that the structure and magnetic properties of our sample can be tuned by the density of the induced defects.These results provide better understanding of the hydrogenation effect and thus can be used in the future for materials processing to meet the requirements of different devices.

Temperature Dependence of Magnetic Properties of SmCo/FeCo Multilayer Films

Sm22Co78/Fe65Co35/Sm22Co78/Fe35 multilaver films were prepared by magnetron sputtering. The temperature dependence of coercivity （Hc）, remanence （Mr） and reduced remanence （Mr/Ms） has been measured. The coercivity decreases with increasing of temperature. The remanence decreases with increasing the temperature from 26 to 100℃, and then increases with continuously increasing the temperature from 100 to 150℃. The reduced remanence increases with increasing the temperature.

Role of TbFe on Perpendicular Magnetic Anisotropy and Giant Magnetoresistance Effect in [Co/Ni]_N-Based Spin Valves

The exchange-coupled [Co/Ni]N/Tb Fe nano-magnetic films can display strong perpendicular magnetic anisotropy(PMA) which depends on the Tb:Fe component ratio, Tb Fe layer thickness and the repetition number N of [Co/Ni]Nmultilayer. Perpendicular spin valves in the nano thickness scale, consisting of a [Co/Ni]3free and a [Co/Ni]5/Tb Fe reference multilayer, show high giant magnetoresistance(GMR) signal of 6.5 % and a large switching field difference over3 k Oe. However, unexpected slanting of the free layer magnetization, accompanied by a reduced GMR ratio, was found to be caused by the presence of a thick Fe-rich or even a thin but Tb-rich Tb Fe layer. We attribute this phenomenon to the large magnetostriction effect of Tb Fe which probably induces strong stress acting on the free layer and hence reduces its interfacial PMA.

Flexible magnetic thin films and devices

Flexible electronic devices are highly attractive for a variety of applications such as flexible circuit boards, solar cells, paper-like displays, and sensitive skin, due to their stretchable, biocompatible, light-weight,portable, and low cost properties. Due to magnetic devices being important parts of electronic devices, it is essential to study the magnetic properties of magnetic thin films and devices fabricated on flexible substrates. In this review, we mainly introduce the recent progress in flexible magnetic thin films and devices, including the study on the stress-dependent magnetic properties of magnetic thin films and devices, and controlling the properties of flexible magnetic films by stress-related multi-fields, and the design and fabrication of flexible magnetic devices.