RC-Circuit-Like Dynamic Characteristic of the Magnetic Domain Wall in Flat Ferromagnetic Nanowires

We investigate the dynamic behavior of the magnetic domain wall under perpendicular magnetic field pulses in fiat ferromagnetic nanowires using micromagnetic simulations. It is found that the perpendicular magnetic field pulse can trigger the magnetic domain wall motion, where all the field torques axe kept on the plane of nanowire strip. The speed of magnetic domain walls faster than several hundreds of meters per second is predicted without the Walker breakdown for the perpendicular magnetic driving field stronger than 200mT. Interestingly, the dynamic behavior of the moving magnetic domain wall driven by perpendicular magnetic field pulses is explained by charging- and discharging-like behaviors of an electrical RC-circuit model, where the charging and the discharging of magnetic charges on the nanowire planes are considered. The concept of the RC-model-like dynamic characteristic of the magnetic domain wall might be promising for the applications in spintronic functional devices based on the magnetic domain wall motion.

Elaboration and Magnetic Properties of Cobalt-Palladium Magnetic Nanowires Encapsulated in Carbon Nanotubes

Bimetallic one-dimensional (1-D) cobalt-palladium magnetic nanowires encapsuled by carbon nanotubes were synthesized on silicon substrate using plasma enhanced chemical vapor deposition technique. After the deposition of the catalyst, the growth of nanotubes takes place in two stages. The first is a thermal pretreatment to transform continuous nanometer bimetallic thick film into isolated and uniformly distributed nanoparticles over the entire surface of the substrate. The second step results in the growth of nanotubes perpendicular to the substrate by the addition of carbon atoms on the insulated metal nanoparticles. While growing the nanotubes at given thermochemical conditions, a Co-Pd eutectic is thought to diffuse inside the cavity of the nanotube along a length of few hundreds of nanometers as determined by high resolution, spatially resolved Electron Energy Loss Spectroscopy (EELS), and energy filtered elemental mapping. The magnetic anisotropy along the nanotube directions is observed. Ferromagnetic or superparamagnetic-like behavior of the filled nanotubes was measured through local magneto-optical Kerr effect or global superconducting quantum interference device measurements, respectively. Information on the magnetism of filled nanotubes at different scales is pointed out and discussed.

Magnetic nanowires fabricated by anodic aluminum oxide template—a brief review

Anodic aluminum oxide （AAO） with highly ordered nanoscale pores which are monodisperse and mutually parallel can be produced through a self-organized electrochemical process. Subsequent deposition of materials into the nanopores produces AA0 embedded nanowire arrays. Whilst the templates can be further removed to obtain free individual nanowires, the em- bedded nanowires form an interesting nanocomposite structure. Recent research activities on the fabrication and characteriza- tion of AAO template based magnetic nanowires are reviewed in this article. Studies of specific systems are given as an exam- ple of the research in the area.

Multi-segmented nanowires for vortex magnetic domain wall racetrack memory

A vortex domain wall's(VW) magnetic racetrack memory's high performance depends on VW structural stability,high speed, low power consumption and high storage density. In this study, these critical parameters were investigated in magnetic multi-segmented nanowires using micromagnetic simulation. Thus, an offset magnetic nanowire with a junction at the center was proposed for this purpose. This junction was implemented by shifting one portion of the magnetic nanowire horizontally in the x-direction(l) and vertically(d) in the y-direction. The VW structure became stable by manipulating magnetic properties, such as magnetic saturation(M_(4)) and magnetic anisotropy energy(K_(u)). In this case, increasing the values of M_(4) ≥ 800 kA/m keeps the VW structure stable during its dynamics and pinning and depinning in offset nanowires,which contributes to maintenance of the storage memory's lifetime for a longer period. It was also found that the VW moved with a speed of 500 m/s, which is desirable for VW racetrack memory devices. Moreover, it was revealed that the VW velocity could be controlled by adjusting the offset area dimensions(l and d), which helps to drive the VW by using low current densities and reducing the thermal-magnetic spin fluctuations. Further, the depinning current density of the VW(J_(d)) over the offset area increases as d increases and l decreases. In addition, magnetic properties, such as the M_(4) and K_(u),can affect the depinning process of the VW through the offset area. For high storage density, magnetic nanowires(multisegmented) with four junctions were designed. In total, six states were found with high VW stability, which means three bits per cell. Herein, we observed that the depinning current density(J_(d)) for moving the VW from one state to another was highly influenced by the offset area geometry(l and d) and the material's magnetic properties, such as the M_(4) and K_(u).

Influence of spin–orbit coupling on spin-polarized electronic transport in magnetic semiconductor nanowires with nanosized sharp domain walls

Influence of spin–orbit coupling on spin-polarized electronic transport in magnetic semiconductor nanowires with nanosized sharp domain walls is investigated theoretically.It is shown that the Rashba spin–orbit coupling can enhance significantly the spin-flip scattering of charge carriers from a nanosized sharp domain wall whose extension is much smaller than the carrier＇s Fermi wavelength.When there are more than one domain wall presented in a magnetic semiconductor nanowire,not only the spin-flip scattering of charge carriers from the domain walls but the quantum interference of charge carriers in the intermediate domain regions between neighboring domain walls may play important roles on spin-polarized electronic transport,and in such cases the influences of the Rashba spin–orbit coupling will depend sensitively both on the domain walls＇ width and the domain walls＇ separation.

Fabrication and Characterization of Fe-Doped In2O3 Dilute Magnetic Semiconducting Nanowires

Fe-doped In2O3 dilute magnetic semiconducting nanowires are fabricated on A u-deposited Si substrates by the chemical vapor deposition technique. It is confirmed by energy dispersive x-ray spectroscopy （EDS）, x-ray photoelectron spectroscopy （XPS） and Raman spectroscopy that Fe has been successfully doped into lattices of In2O3 nanowires. The EDS measurements reveal a large amount of oxygen vacancies existing in the Fe-doped In2O3 nanowires. The Fe dopant exists as a mixture of Fe2＋ and Fe3＋, as revealed by the XPS. The origin of room-temperature ferromagnetism in Fe-doped In2O3 nanowires is explained by the bound magnetic polaron model.

Room-temperature ferromagnetism observed in Nd-doped In_2O_3 dilute magnetic semiconducting nanowires

Nd-doped In_2O_3 nanowires were fabricated by an Au-catalyzed chemical vapor deposition method.Nd atoms were successfully doped into the In_2O_3 host lattice structure,as revealed by energy dispersive x-ray spectroscopy,x-ray photoelectron spectroscopy,Raman spectroscopy,and x-ray diffraction.Robust room temperature ferromagnetism was observed in Nd-doped In_2O_3 nanowires,which was attributed to the long-range-mediated magnetization among Nd^（3＋）-vacancy complexes through percolation-bound magnetic polarons.

Effects of dipolar interactions on magnetic properties of Co nanowire arrays

Magnetic properties and magnetization processes of Co nanowire arrays with various packing densities are investigated by means of object-oriented micromagnetic framework（OOMMF） software package with finite difference micromagnetic simulations. The packing density of nanowires is changed with the diameter, number of nanowires and center-to-center spacing between the wires. The magnetization reversal mechanism and squareness of the hysteresis loops of the nanowire arrays are very sensitive to the packing density of nanowires. Clear steps and plateaux on the demagnetization are visible,which turns out that dipolar interactions among the wires have a significant influence on switching field.

Effect of sub-layer thickness on magnetic and giant magnetoresistance properties of Ni–Fe/Cu/Co/Cu multilayered nanowire arrays

Ni-Fe/Cu/Co/Cu multilayered nanowire arrays were electrodeposited into anodic aluminum oxide template by using dual-bath method at room temperature. Scanning electron microscopy and transmission electron microscopy were used to characterize the morphology and structure of the multilayered nanowire arrays. Vibrating sample magnetometer and physical property measurement system were used to measure their magnetic and giant magnetoresistance （GMR） properties. The effect of sub-layer thickness on the magnetic and GMR properties was investigated. The results indicate that magnetic properties of electmdeposited nanowires are not affected obviously by Cu layer thickness, while magnetic layers （Ni-Fe and Co layers） have significant influence. In addition, GMR ratio presents an oscillatory behavior as Cu layer thickness changes. The magnetic and GMR properties of the multilayered nanowire arrays are optimum at room temperature for the material structure of Ni-Fe （25 nm）/Cu （15 nm）/Co （25 nm）/Cu （15 nm） with 30 deposition cycles.

Fe48Co52 Alloy Nanowire Arrays： Effects of Magnetic Field Annealing

The effects of magnetic field annealing on the properties of Fe48Co52 alloy nanowire arrays with various interwire distances （Di=30-60 nm） and wire diameters （Dw=22-46 nm） were investigated in detail. It was found that the array＇s best annealing temperature and crys- talline structure did not show any apparent dependence on the treatment of applying a 3 kOe magnetic field along the wire during the annealing process. For arrays with small Dw or with large Di, the treatment of magnetic field annealing also had no obvious influence on their magnetic performances. However, such a magnetic field annealing constrained the shift of the easy magnetization direction and improved the coercivity and the squareness obviously for arrays with large Dw or with small Di. The difference in the intensity of the effective anisotropic field within the arrays was believed to be responsible for this different variation of the array＇s magnetic properties after magnetic field annealing.

Researchers in Xi'an Jiaotong University have made important progress in the research of flexible epitaxial magnetic nanowire arrays

In recent years,flexible materials are widely concerned by scientists because of their unique bendingproperties and potential applications in flexible wearable electronic devices.Magnetic material,especially one dimensional nano structure with high orientation,are also research focus for researchers due to their important applications in the fields of high density magnetic storage and sensors.Compared

On the Growth Mechanism of Nickel and Cobalt Nanowires and Comparison of Their Magnetic Properties

Magnetic nanowires(NWs)are ideal materials for the fabrication of various multifunctional nanostructures which can be manipulated by an external magnetic fi eld.Highly crystalline and textured nanowires of nickel(Ni NWs)and cobalt(Co NWs)with high aspect ratio(~330)and high coercivity have been synthesized by electrodeposition using nickel sulphate hexahydrate(NiSO_(4)·6H_(2)O)and cobalt sulphate heptahydrate(CoSO_(4)·7H_(2)O)respectively on nanoporous alumina membranes.They exhibit a preferential growth along〈110〉.A general mobility assisted growth mechanism for the formation of Ni and Co NWs is proposed.The role of the hydration layer on the resulting one-dimensional geometry in the case of potentiostatic electrodeposition is verified.A very high interwire interaction resulting from magnetostatic dipolar interactions between the nanowires is observed.An unusual low-temperature magnetisation switching for fi eld parallel to the wire axis is evident from the peculiar high fi eld M(T)curve.