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An Improved Power Efficient Clock Pulsed D Flip-flop Using Transmission Gate
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作者 B.Syamala M.Thamarai 《Journal of Electronic & Information Systems》 2023年第1期26-35,共10页
Recent digital applications will require highly efficient and high-speed gadgets and it is related to the minimum delay and power consumption.The proposed work deals with a low-power clock pulsed data flip-flop(D flip... Recent digital applications will require highly efficient and high-speed gadgets and it is related to the minimum delay and power consumption.The proposed work deals with a low-power clock pulsed data flip-flop(D flip-flop)using a transmission gate.To accomplish a power-efficient pulsed D flip-flop,clock gating is proposed.The gated clock reduces the unnecessary switching of the transistors in the circuit and thus reduces the dynamic power consumption.The clock gating approach is employed by using an AND gate to disrupt the clock input to the circuit as per the control signal called Enable.Due to this process,the clock gets turned off to reduce power consumption when there is no change in the output.The proposed transmission gate-based pulsed D flip-flop’s performance with clock gating and without clock gating circuit is analyzed.The proposed pulsed D flip-flop power consumption is 1.586μw less than the without clock gated flip-flop.Also,the authors have designed a 3-bit serial-in and parallel-out shift register using the proposed D flip-flop and analyzed the performance.Tanner Electronic Design Automation tool is used to simulate all the circuits with 45 nm technology. 展开更多
关键词 Pulsed d flip-flop Clock gating Low power Shift register Transmission gate
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主从型D触发器的动态功耗分析 被引量:2
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作者 王伦耀 吴训威 《浙江大学学报(理学版)》 CAS CSCD 2003年第1期35-40,共6页
主从型D触发器的动态功耗同触发器内部节点上的信号跃迁情况和节点电容有关.基于D触发器的电路结构与MOS管参数,本文对主从型D触发器各个节点电容进行了计算.利用对各节点电容的计算值,便可估算在某一激励输入序列下的D触发器的动态功耗... 主从型D触发器的动态功耗同触发器内部节点上的信号跃迁情况和节点电容有关.基于D触发器的电路结构与MOS管参数,本文对主从型D触发器各个节点电容进行了计算.利用对各节点电容的计算值,便可估算在某一激励输入序列下的D触发器的动态功耗.Pspice模拟证实了该一动态功耗估算的准确性.搞清了D触发器内部诸结点电容与MOS管参数之间的关系亦为降低它的动态功耗提供了参考依据. 展开更多
关键词 动态功耗 功耗估计 主从型d触发器 CMOS集成电路 节点电容 电路结构
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基于InP DHBT工艺的6 bit DAC设计与实现
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作者 王子青 赵子润 龚剑 《半导体技术》 CAS CSCD 北大核心 2018年第8期579-583,638,共6页
基于In P双异质结双极晶体管(DHBT)工艺设计并实现了一款6 bit高速数模转换器(DAC)芯片,该In P工艺DHBT器件的电流增益截止频率大于200 GHz,最高振荡频率大于285 GHz。DAC芯片采用R-2R梯形电阻电流舵结构,输入级采用缓冲预放大器结... 基于In P双异质结双极晶体管(DHBT)工艺设计并实现了一款6 bit高速数模转换器(DAC)芯片,该In P工艺DHBT器件的电流增益截止频率大于200 GHz,最高振荡频率大于285 GHz。DAC芯片采用R-2R梯形电阻电流舵结构,输入级采用缓冲预放大器结构,实现输入缓冲及足够高的增益;D触发器单元采用采样/保持两级锁存拓扑结构实现接收数据的时钟同步;采用开关电流源单元及R-2R电阻单元,减小芯片体积,实现高速采样。该DAC最终尺寸为4.5 mm×3.5 mm,功耗为3.5 W。实测结果表明,该DAC可以很好地实现10 GHz采样时钟下的斜坡输出,微分非线性为+0.4/-0.24 LSB,积分非线性为+0.61/-0.64 LSB。 展开更多
关键词 数模转换器(dAC) R-2R电阻梯 InP双异质结双极晶体管(dHBT) 电流舵 主从d触发器
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Design of an 8 bit differential paired eFuse OTP memory IP reducing sensing resistance 被引量:1
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作者 JANG Ji-Hye 金丽妍 +3 位作者 JEON Hwang-Gon KIM Kwang-Il HA Pan-Bong KIM Young-Hee 《Journal of Central South University》 SCIE EI CAS 2012年第1期168-173,共6页
For the conventional single-ended eFuse cell, sensing failures can occur due to a variation of a post-program eFuse resistance during the data retention time and a relatively high program resistance of several kilo oh... For the conventional single-ended eFuse cell, sensing failures can occur due to a variation of a post-program eFuse resistance during the data retention time and a relatively high program resistance of several kilo ohms. A differential paired eFuse cell is designed which is about half the size smaller in sensing resistance of a programmed eFuse link than the conventional single-ended eFuse cell. Also, a sensing circuit of sense amplifier is proposed, based on D flip-flop structure to implement a simple sensing circuit. Furthermore, a sensing margin test circuit is proposed with variable pull-up loads out of consideration for resistance variation of a programmed eFuse. When an 8 bit eFuse OTP IP is designed with 0.18 ~tm standard CMOS logic of TSMC, the layout dimensions are 229.04 μm ×100.15μm. All the chips function successfully when 20 test chips are tested with a program voltage of 4.2 V. 展开更多
关键词 eFuse differential paired efuse cell one time programmable memory sensing resistance d flip-flop based sense amplifier
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Reversible Logic Based MOS Current Mode Logic Implementation in Digital Circuits
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作者 S.Sharmila Devi V.Bhanumathi 《Computers, Materials & Continua》 SCIE EI 2022年第2期3609-3624,共16页
Now a days,MOS Current Mode Logic(MCML)has emerged as a better alternative to Complementary Metal Oxide Semiconductor(CMOS)logic in digital circuits.Recent works have only traditional logic gates that have issues with... Now a days,MOS Current Mode Logic(MCML)has emerged as a better alternative to Complementary Metal Oxide Semiconductor(CMOS)logic in digital circuits.Recent works have only traditional logic gates that have issues with information loss.Reversible logic is incorporated with MOS Current Mode Logic(MCML)in this proposed work to solve this problem,which is used for multiplier design,D Flip-Flop(DFF)and register.The minimization of power and area is the main aim of the work.In reversible logic,the count of outputs and inputs is retained as the same value for creating one-to-one mapping.A unique output vector set can be generated for each input vector set and information loss is also prevented.In reversible MCML based multiplier,reversible logic full adder is utilized to minimize the area and power.D flip-flops based on reversible MCML are often designed to store information that is then combined to form a reversible MCML based register.The proposed reversible MCML multiplier attains average power of 0.683 mW,Reversible MCML based DFF achieves 0.56μW and Reversible MCML based 8-bit register attains 04.04μW.The result shows that the proposed Reversible MCML based multiplier,Reversible MCML based D flip-flop and ReversibleMCML based register achieves better performance in terms of current,power dissipation,average power and area. 展开更多
关键词 MOS current mode logic reversible logic MULTIPLIER d flip-flop and register
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反馈式ECL记忆门的记忆性能和移位计数器 被引量:1
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作者 刘莹 方倩 方振贤 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第12期2184-2189,共6页
经过数学论证表明,改进反馈式ECL(MFECL)门可在二个状态中任一态保持稳定,所以认为MFECL门就是一种ECL记忆门或D锁存器.提出了一种由两个ECL记忆门组成的ECL主从D触发器.在上述理论基础上,利用此主从D触发器设计出5进制移位型计数器.经... 经过数学论证表明,改进反馈式ECL(MFECL)门可在二个状态中任一态保持稳定,所以认为MFECL门就是一种ECL记忆门或D锁存器.提出了一种由两个ECL记忆门组成的ECL主从D触发器.在上述理论基础上,利用此主从D触发器设计出5进制移位型计数器.经过计算机模拟上述电路,验证了理论和电路的正确性. 展开更多
关键词 反馈式ECL记忆门的记忆性能 d锁存器 主从d触发器 5进制移位型计数器
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主从JK触发器真值表的扩展
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作者 王梅 《成都纺织高等专科学校学报》 CAS 2000年第1期28-30,60,共4页
通过对主从JK触发器的分析,在原JK触发器真值表的基础上,推出了主从JK触发器扩展真值表。
关键词 主从JK触发器 CP脉冲 真值表 扩展真值表
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基于MOS电流模逻辑的4/5双模前置分频器设计 被引量:2
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作者 朱艳霞 梁蓓 杨发顺 《电子科技》 2018年第5期69-72,共4页
为满足高频通信的要求,文中设计了基于MOS电流模逻辑的4/5双模前置分频器。在分析MCML电路的工作原理的基础上,用已优化参数的MCML电路设计了逻辑或门与锁存器,并基于该或门与锁存器设计了4/5双模前置分频器。利用Cadence工具进行仿真,... 为满足高频通信的要求,文中设计了基于MOS电流模逻辑的4/5双模前置分频器。在分析MCML电路的工作原理的基础上,用已优化参数的MCML电路设计了逻辑或门与锁存器,并基于该或门与锁存器设计了4/5双模前置分频器。利用Cadence工具进行仿真,仿真结果表明,在采用SMIC 0.13μm CMOS工艺,电源电压为1.2 V,尾电流I_(ss)为50μA的条件下,该分频器最高工作频率可达到5 GHz。与同等条件下其他结构的电路相比,基于MOS电流模逻辑的4/5双模前置分频器的设计大大降低了功耗并提高了处理速度。 展开更多
关键词 MCML 或门 锁存器 主从d触发器 分频器
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Design of ternary D flip-flop with pre-set and pre-reset functions based on resonant tunneling diode literal circuit 被引量:4
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作者 Mi LIN Wei-feng LV Ling-ling SUN 《Journal of Zhejiang University-Science C(Computers and Electronics)》 SCIE EI 2011年第6期507-514,共8页
The problems existing in the binary logic system and the advantages of multiple-valued logic (MVL) are introduced. A literal circuit with three-track-output structure is created based on resonant tunneling diodes (RTD... The problems existing in the binary logic system and the advantages of multiple-valued logic (MVL) are introduced. A literal circuit with three-track-output structure is created based on resonant tunneling diodes (RTDs) and it has the most basic memory function. A ternary RTD D flip-flop with pre-set and pre-reset functions is also designed, the key module of which is the RTD literal circuit. Two types of output structure of the ternary RTD D flip-flop are optional: one is three-track and the other is single-track; these two structures can be transformed conveniently by merely adding tri-valued RTD NAND, NOR, and inverter units after the three-track output. The design is verified by simulation. Ternary flip-flop consists of an RTD literal circuit and it not only is easy to understand and implement but also provides a solution for the algebraic interface between the multiple-valued logic and the binary logic. The method can also be used for design of other types of multiple-valued RTD flip-flop circuits. 展开更多
关键词 Resonant tunneling diode (RTd) Ternary logic Literal circuit d flip-flop
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Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT D flip-flop using fluorine plasma treatment 被引量:1
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作者 谢元斌 全思 +3 位作者 马晓华 张进城 李青民 郝跃 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第6期69-72,共4页
Depletion-mode and enhancement-mode AlGaN/GaN HEMTs using fluorine plasma treatment were integrated on one wafer.Direct-coupled FET logic circuits,such as an E/D HEMT inverter,NAND gate and D flip-flop,were fabricated... Depletion-mode and enhancement-mode AlGaN/GaN HEMTs using fluorine plasma treatment were integrated on one wafer.Direct-coupled FET logic circuits,such as an E/D HEMT inverter,NAND gate and D flip-flop,were fabricated on an AlGaN/GaN heterostructure.The D flip-flop and NAND gate are demonstrated in a GaN system for the first time.The dual-gate AlGaN/GaN E-HEMT substitutes two single-gate E-HEMTs for simplifying the NAND gate and shrinking the area,integrating with a conventional AlGaN/GaN D-HEMT and demonstrating a NAND gate.E/D-mode D flip-flop was fabricated by integrating the inverters and the NAND gate on the AlGaN/GaN heterostructure.At a supply voltage of 2 V,the E/D inverter shows an output logic swing of 1.7 V,a logic-low noise margin of 0.49 V and a logic-high noise margin of 0.83 V.The NAND gate and D flip-flop showed correct logic function demonstrating promising potential for GaN-based digital ICs. 展开更多
关键词 ALGAN/GAN fluorine plasma treatment INVERTER NANd gate d flip-flop
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Security Enhancement of Arbiter-Based Physical Unclonable Function on FPGA 被引量:1
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作者 WANG Jun LIU Shubo +1 位作者 XIONG Xingxing LIANG Cai 《Wuhan University Journal of Natural Sciences》 CAS CSCD 2017年第2期127-133,共7页
In order to reduce physical unclonable fixnction (PUF) response instability and imbalance caused by the metastability and the bias of arbiter, this paper uses an improved balanced D flip-plop (DFF) based on the un... In order to reduce physical unclonable fixnction (PUF) response instability and imbalance caused by the metastability and the bias of arbiter, this paper uses an improved balanced D flip-plop (DFF) based on the unbalanced DFF to reduce the bias in response output and enhances the security of PUF by adopting two balanced DFFs in series. The experimental results show that two cascaded balanced DFFs improve the stability of the DFF, and the output of two balanced DFFs is more reliable. The entropy of output is fixed at 98.7%. 展开更多
关键词 physical unclonable function METASTABILITY balanced d flip-flop field programmable gate arrays (FPGA) security
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All-optical pseudo noise sequence generator using a micro-ring resonator
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作者 Rajiv KUMAR Ajay KUMAR +1 位作者 Poonam SINGH Niranjan KUMAR 《Frontiers of Optoelectronics》 EI CSCD 2021年第3期365-373,共9页
A scheme for the generation of a pseudo noise(PN)sequence in the optical domain is proposed.The cascaded units of micro-ring resonator(MRR)-based D flip-flop are used to design the device.D flip-flops consist of a sin... A scheme for the generation of a pseudo noise(PN)sequence in the optical domain is proposed.The cascaded units of micro-ring resonator(MRR)-based D flip-flop are used to design the device.D flip-flops consist of a single MRR and share the same optical pump signal.Numerical analysis is performed,and simulated results are discussed.The proposed device can be used as a building block for optical computing and for creating an information processing system. 展开更多
关键词 ALL-OPTICAL d flip-flop micro-ring resonator(MRR) optical communication pseudo noise(PN)sequence
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