This paper investigates load-pull measurement of AlGaN/GaN high electron mobility transistors（HEMTs） at different numbers of gate fingers.Scalable small-signal models are extracted to analyze the relationship betwee...This paper investigates load-pull measurement of AlGaN/GaN high electron mobility transistors（HEMTs） at different numbers of gate fingers.Scalable small-signal models are extracted to analyze the relationship between each model＇s parameters and the number of device＇s gate fingers.The simulated S-parameters from the small-signal models are compared with the reflection coefficients measured from the load-pull measurement system at X-band frequencies of 8.8 and 10.4 GHz.The dependency between the number of device＇s gate fingers and load-pull characterization is presented.展开更多
基金supported by the National Natural Science Foundation of China(No.61204086)
文摘This paper investigates load-pull measurement of AlGaN/GaN high electron mobility transistors（HEMTs） at different numbers of gate fingers.Scalable small-signal models are extracted to analyze the relationship between each model＇s parameters and the number of device＇s gate fingers.The simulated S-parameters from the small-signal models are compared with the reflection coefficients measured from the load-pull measurement system at X-band frequencies of 8.8 and 10.4 GHz.The dependency between the number of device＇s gate fingers and load-pull characterization is presented.
