Modeling and Analysis of Mechanical Quality Factor of the Resonator for Cylinder Vibratory Gyroscope

Mechanical Quality factor（Q factor） of the resonator is an important parameter for the cylinder vibratory gyroscope（CVG）. Traditional analytical methods mainly focus on a partial energy loss during the vibration process of the CVG resonator, thus are not accurate for the mechanical Q factor prediction. Therefore an integrated model including air damping loss, surface defect loss, support loss, thermoelastic damping loss and internal friction loss is proposed to obtain the mechanical Q factor of the CVG resonator. Based on structural dynamics and energy dissipation analysis, the contribution of each energy loss to the total mechanical Q factor is quantificationally analyzed. For the resonator with radius ranging from 10 mm to 20 mm, its mechanical Q factor is mainly related to the support loss, thermoelastic damping loss and internal friction loss, which are fundamentally determined by the geometric sizes and material properties of the resonator. In addition, resonators made of alloy 3J53 （Ni42CrTiA1）, with different sizes, were experimentally fabricated to test the mechanical Q factor. The theoretical model is well verified by the experimental data, thus provides an effective theoretical method to design and predict the mechanical Q factor of the CVG resonator.

Mechanical quality factor of high-overtone bulk acoustic resonator

Mechanical quality factor Qm is a key characteristic parameter of High-overtone bulk acoustic resonator（HBAR）. The effects of structure parameter（thickness） and perfor？mance parameters（characteristic impedance and mechanical attenuation factor） of substrate,piezoelectric film and electrode constituting HBAR on Qm are carried out. The relationships between Qm and these parameters are obtained by a lumped parameter equivalent circuit instead of distributed parameter equivalent circuit near the resonance frequency, and the an？alytical expressions oi Qm are given. The results show that Qm increases non-monotonically with the continuous increase of the substrate thickness for HBAR with certain piezoelectric film thickness, and it approaches to the substrate material mechanical quality factor as the substrate thickness is large. Qm decreases wavily with the continuous increase of the piezoelectric film thickness for HBAR with certain substrate thickness. Sapphire and YAG with low mechanical loss are appropriate as the substrate to get a larger Qm- The electrode loss must be considered since it can reduce Qm- Compared with Au electrode, A1 electrode with lower loss can obtain higher Qm when the appropriate electrode thickness is selected. In addition, Qm decreases with the increase of frequency. These results provide the theoretical basis for optimizing the parameters of HBAR and show that trade-oflFs between Qm and must be considered in the design because their changes are often inconsistent.

Origin of high mechanical quality factor in CuO-doped （K, Na）NbO3-based ceramics

The origin of a high mechanical quality in CuO-doped （K, Na）NbO3-based ceramics is addressed by considering the correlations between the lattice positions of Cu ions and the hardening effect in K0.48Na0.52＋xNbO3-0.01CuO ceramics. The Cu ions simultaneously occupy K/Na and Nb sites of these ceramics with x = 0 and 0.02, only occupy the K/Na site of the ceramics with x= -0.02, and mostly form a secondary phase of the ceramics with x = -0.05. The Cu ions lead to the hardening of ceramics with an increase of Ec and Qm by only occupying the K/Na site, together with the formation of double hysteresis loops in un-poled compositions. A defect model is proposed to illuminate the origin of a high Qm value, that is, the domain stabilization is dominated by the content of relatively mobile O2- ions in the ceramics, which has a weak bonding with CUK/Na defects.

Outstanding electromechanical performance in piezoelectric ceramics via synergistic effects of defect engineering and domain miniaturization

Piezoelectric ceramics with high mechanical quality factor Q_(m) and large piezoelectric coefficient d_(33) are urgently required for advanced piezoelectric applications.However,obtaining both of these prop-erties simultaneously remains a difficult challenge due to their mutually restrictive relationship.Here 0.5Pb(Ni_(1/3)Nb_(2/3))O_(3)-0.5Pb(Zr_(0.3)Ti_(0.7))O_(3) piezoceramic with tetragonal(T)-rich MPB is designed as a matrix to construct the defect engineering by doping low-valent Mn ions.The strong coupling of defect dipole and T-rich phase can effectively hinder the rotation of P_(s),restrict domain wall motion and improve Q_(m).At the same time,the substituted Mn ions will introduce local random field,destroying the long-range or-dering of ferroelectric domain and reducing domain size.The miniaturized domain structure can increase poling efficiency and inhibit the reduction of d_(33).Guided by this strategy,Q_(m) has increased by more than 10 times and d_(33) has only decreased by about 25%.The optimized electromechanical performance with Q_(m)=822,d_(33)=502 pC/N,k_(p)=0.55 and tanδ=0.0069 can be obtained in the present study.

Enhanced electrical performance in CaBi_(4)Ti_(4)O_(15)ceramics through synergistic chemical doping and texture engineering

High-temperature piezoelectric materials with excellent piezoelectricity,low dielectric loss and large resistivity are highly desired for many industrial sectors such as aerospace,aircraft and nuclear power.Here a synergistic design strategy combining microstructural texture and chemical doping is employed to optimize CaBi 4Ti 4O15(CBT)ceramics with bismuth layer structure.High textured microstructure with an orientation factor of 80%e82%has been successfully achieved by the spark plasma sintering tech-nique.Furthermore,by doping MnO_(2),both advantages of hard doping and sintering aids are used to obtain the excellent electrical performance of d_(33)=27.3 pC/N,tandδ-0.1%,Q_(31)~2,307 and electrical re-sistivityρ~6.5×10^(10)Ω·cm.Up to 600℃,the 0.2%(in mass)Mn doped CBT ceramics still exhibit high performance of d_(33)=26.4 pC/N,r~1.5×10^(6)Ω·cm and tandδ~15.8%,keeping at an applicable level,thus the upper-temperature limit for practical application of the CBT ceramics is greatly increased.This work paves a new way for developing and fabricating excellent high-temperature piezoelectric materials.