Experimental Study on the Resistance and Splash Performances of Water Collecting Devices for Mechanical Draft Cooling Towers

In recent years,water collecting systems,with the associated advantages of energy saving and noise reduction,have become the foundation for the development of a scheme to optimize the structure of cooling towers.To explore the feasibility of this approach for mechanical draft cooling towers,a small-scale experimental device has been built to study the resistance and splash performances of three U-type water collecting devices(WCDs)for different water flow rates and wind speeds.The experimental results show that within the considered ranges of wind speed and water flow rate,the pressure drop of the different WCDs can vary significantly.The resistance and local splash performances can also be remarkably different.Some recommendations about the most suitable system are provided.Moreover,a regression analysis of the experimental data is conducted,and the resulting fitting formulas for resistance and splash performance of WCD are reported.

A SIMPLE APPROACH TO THE CALCULATION OF THE MECHANICAL STRESS IN SILICON DEVICES

The residual mechanical stress in SiO2 films results in the degradation of mobilitiesin MOSFETs. Based on the edge force approximation in SiO2 films, the stress field in MOS devicesis calculated. The results here are in agreement with those measured by the Raman spectrummethod.

Code mechanical solidification and verification in MEMS security devices

The virtual machine of code mechanism （VMCM） as a new concept for code mechanical solidification and verification is proposed and can be applied in MEMS （micro-electromechanical systems） security device for high consequence systems. Based on a study of the running condition of physical code mechanism, VMCM＇s configuration, ternary encoding method, running action and logic are derived. The cases of multi-level code mechanism are designed and verified with the VMCM method, showing that the presented method is effective.

Prospective Evaluation of Outcomes of Mechanical Devices in Women with Symptomatic Pelvic Organ Prolapse in Ogbomoso, South-Western Nigeria

Background: Symptomatic pelvic organ prolapse (POP) impacts the sufferers’ quality of life negatively. There is a preference for a mechanical device in certain conditions though the definitive management of POP is surgical. Objectives: We conducted the study to evaluate the outcome of management of POP using mechanical devices. Methods: It was a prospective study. It took place in the gynecology unit of the Bowen University Teaching Hospital Ogbomoso between May 2014 and April 2019. We followed up with eligible patients who opted for pessary use for a median duration of 18 months (Range 12 - 84 months). We excluded those who refuse to participate in the study. Results: Of the 127 patients with symptomatic POP, seventy-five (59.1%) opted for the use of mechanical devices, and 70 successfully retained them four weeks after insertion. We lost Six (9.2%) patients to follow up. Of the 64 women included in the analysis, 16 (25%) discontinued use at some point after four weeks, whereas 36 (56.3%) used the pessary successfully throughout the follow-up period. Overall, 12.1% of the women experienced minor complications (6.9% pain or discomfort, 3.2% excoriation or bleeding, and 2.0% dis-impaction or constipation). After cessation of pessary use, 12 (25%) of the 48 women chose surgery, and 10 (20.8%) chose no further treatment. Conclusion: This study concluded that pessary use for pelvic organ prolapse is safe in low resource settings. Therefore, it is justifiable to offer pessaries in the initial management of uterovaginal prolapse to all patients who opt for conservative management and those awaiting surgery.

Mechanical Design of Long-Term Body-Adhered Medical Devices to Maximize On-Body Survival

Long-term, body-adhered medical devices rely on an adhesive interface to maintain contact with the patient. The greatest threat to on-body adhesion is mechanical stress imparted on the medical device. Several factors contribute to the ability of the device to withstand such stresses, such as the mechanical design, shape, and size of the device. This analysis investigates the impact that design changes to the device have on the stress and strain experienced by the system when acted on by a stressor. The analysis also identifies the design changes that are most effective at reducing the stress and strain. An explicit dynamic finite element analysis method was used to simulate several design iterations and a regression analysis was performed to quantify the relationship between design and resultant stress and strain. The shape, height, size, and taper of the medical device were modified, and the results indicate that, to reduce stress and strain in the system, the device should resemble a square in shape, be short in height, and small in size with a large taper. The square shape experienced 17.5% less stress compared to the next best performing shape. A 10% reduction in device height resulted in a 21% reduction in stress and 24% reduction in strain. A 20% reduction in device size caused a 7% reduction in stress and 2% reduction in strain. A 20% increase in device taper size led to a negligible reduction in stress and a 6% reduction in strain. The height of the device had the greatest impact on the resultant stress and strain.

Analysis of displacement damage effects on the charge-coupled device induced by neutrons at Back-n in the China Spallation Neutron Source

Displacement damage effects on the charge-coupled device(CCD)induced by neutrons at the back-streaming white neutron source(Back-n)in the China Spallation Neutron Source(CSNS)are analyzed according to an online irradiation experiment.The hot pixels,random telegraph signal(RTS),mean dark signal,dark current and dark signal non-uniformity(DSNU)induced by Back-n are presented.The dark current is calculated according to the mean dark signal at various integration times.The single-particle displacement damage and transient response are also observed based on the online measurement data.The trends of hot pixels,mean dark signal,DSNU and RTS degradation are related to the integration time and irradiation fluence.The mean dark signal,dark current and DSNU2 are nearly linear with neutron irradiation fluence when nearly all the pixels do not reach saturation.In addition,the mechanisms of the displacement damage effects on the CCD are demonstrated by combining the experimental results and technology computer-aided design(TCAD)simulation.Radiation-induced traps in the space charge region of the CCD will act as generation/recombination centers of electron-hole pairs,leading to an increase in the dark signal.

A review of β-Ga_2O_3 single crystal defects, their effects on device performance and their formation mechanism

As a wide-bandgap semiconductor(WBG), β-Ga_2O_3 is expected to be applied to power electronics and solar blind UV photodetectors. In this review, defects in β-Ga_2O_3 single crystals were summarized, including dislocations, voids, twin, and small defects. Their effects on device performance were discussed. Dislocations and their surrounding regions can act as paths for the leakage current of SBD in single crystals. However, not all voids lead to leakage current. There's no strong evidence yet to show small defects affect the electrical properties. Doping impurity was definitely irrelated to the leakage current. Finally, the formation mechanism of the defects was analyzed. Most small defects were induced by mechanical damages. The screw dislocation originated from a subgrain boundary. The edge dislocation lying on a plane slightly tilted towards the(102) plane, the(101) being the possible slip plane. The voids defects like hollow nanopipes, PNPs, NSGs and line-shaped grooves may be caused by the condensation of excess oxygen vacancies, penetration of tiny bubbles or local meltback. The nucleation of twin lamellae occurred at the initial stage of "shoulder part" during the crystal growth. These results are helpful in controlling the occurrence of crystal defects and improving the device performance.

Designer substrates and devices for mechanobiology study

Both biological and engineering approaches have contributed significantly to the recent advance in the field of mechanobiology.Collaborating with biologists,bio-engineers and materials scientists have employed the techniques stemming from the conventional semiconductor industry to rebuild cellular milieus that mimic critical aspects of in vivo conditions and elicit cell/tissue responses in vitro.Such reductionist approaches have help to unveil important mechanosensing mechanism in both cellular and tissue level,including stem cell differentiation and proliferation,tissue expansion,wound healing,and cancer metastasis.In this mini-review,we discuss various microfabrication methods that have been applied to generate specific properties and functions of designer substrates/devices,which disclose cell-microenvironment interactions and the underlying biological mechanisms.In brief,we emphasize on the studies of cell/tissue mechanical responses to substrate adhesiveness,stiffness,topography,and shear flow.Moreover,we comment on the new concepts of measurement and paradigms for investigations of biological mechanotransductions that are yet to emerge due to on-going interdisciplinary efforts in the fields of mechanobiology and microengineering.

Parameter optimization and experiment of the negative pressure precision seed-metering device for wheat

In order to ensure the most reasonable distribution of wheat seeds in the field to improve seeding quality and uniformity,a set of negative pressure precision seed-metering device was designed,which shares a hollow shaft.Every seed-metering device can sow two rows of wheat.By the STAR-CCM+,the analysis of nephogram,vectogram and streamline graph showed that more ideal structural parameters of the seed-metering device are 0.5 mm width of the slit sucking seed(WSS),150-200 mm diameter of the seed-metering disc(DSD),2.0 mm axial depth of air chamber in the seed-metering disc(ADS),and arc-shaped cross-section shape of the ring groove sucking seed(CSGS).Single-factor test on the JPS-12 test-bed analyzed the influence of the CSGS,WSS,DSD,and ADS on the qualified index(Iq),multiple index(Imul),miss index(Imiss)and coefficient of variation of qualified seed spacing(CV).Through the orthogonal on the JPS-12 test-bed,it is found that the influence of vacuum negative pressure and seed-metering device shaft speed is significant on the Iq,Imiss and Imul.Based on these,the structural parameters of the seed-metering device were optimized.The DSD is 180 mm,the WSS is 0.7 mm,the ADS is 2.5 mm,and the CSGS is arc-shaped.The optimization seed-metering device was tested on the JPS-12 test-bed.The Iq is 86.66%,the Imiss is 5.09%,the Imul is 8.25%,and the CV is 24.50%.These testing results fully coincide with the standard JB/T 10293-2013 Specifications of single seed drill(precision drill).The seed-metering device meets fully the requirements for wheat precision seeding.

Decoding the Moon Phase Display Device over the Front Dial of the Antikythera Mechanism

The Antikythera mechanism is the most famous ancient astronomical calculator. The damaged excavation is a critical constraint for decoding the mechanism completely. By the systematic reconstruction design methodology, all feasible designs of the moon phase display device, which is one of the unclear mechanisms of the Antikythera mechanism, are reconstructed. These designs, including ordinary gear trains and epicyclic gear trains, are the simplest designs and satisfy the surviving evidence. The Antikythera mechanism and its reconstruction designs presented by LIN and YAN are introduced first. Three pointer types of the Antikythera mechanism are concluded based on their display motions and the orientation of the mechanism. In accordance with the analysis of the available interior reconstruction designs and the surviving evidence, four feasible designs of the moon phase display device are generated. All of them utilize the ball pointer with black and white that rotates around the radial axis to show cyclic moon phase. Two of these four feasible reconstruction designs are driven by one input source, and their bronze disks are fixed and rotatable respectively. Both of the remaining reconstruction designs are driven by two input sources, and their bronze disks are rotatable. Therefore, the four reconstruction designs of the moon phase display device reveal all possible display conditions of the moon phase pointers and the possible purposes of the bronze disk.

Identifying the enhancement mechanism of Al/MoO_(3) reactive multilayered films on the ignition ability of semiconductor bridge using a one-dimensional gas-solid two-phase flow model

Energetic Semiconductor bridge(ESCB)based on reactive multilayered films(RMFs)has a promising application in the miniature and intelligence of initiator and pyrotechnics device.Understanding the ignition enhancement mechanism of RMFs on semiconductor bridge(SCB)during the ignition process is crucial for the engineering and practical application of advanced initiator and pyrotechnics devices.In this study,a one-dimensional(1D)gas-solid two-phase flow ignition model was established to study the ignition process of ESCB to charge particles based on the reactivity of Al/MoO_(3) RMFs.In order to fully consider the coupled exothermic between the RMFs and the SCB plasma during the ignition process,the heat release of chemical reaction in RMFs was used as an internal heat source in this model.It is found that the exothermal reaction in RMFs improved the ignition performance of SCB.In the process of plasma rapid condensation with heat release,the product of RMFs enhanced the heat transfer process between the gas phase and the solid charge particle,which accelerated the expansion of hot plasma,and heated the solid charge particle as well as gas phase region with low temperature.In addition,it made up for pressure loss in the gas phase.During the plasma dissipation process,the exothermal chemical reaction in RMFs acted as the main heating source to heat the charge particle,making the surface temperature of the charge particle,gas pressure,and gas temperature rise continuously.This result may yield significant advantages in providing a universal ignition model for miniaturized ignition devices.

STUDY OF DEGRADATION MECHANISM AND PACKAGING OF ORGANIC LIGHT EMITTING DEVICES

Organic Light Emitting Devices (OLED) have attracted much attention recently, for their applications in futureFlat Panel Displays and lighting products. However, their fast degradation remained a major obstacle to theircommercialization. Here we present a brief summary of our studies on both extrinsic and intrinsic causes for the fastdegradation of OLEDs. In particular, we focus on the origin of the dark spots by 'rebuilding' cathodes, which confirms thatthe growth of dark spots occurs primarily due to cathode delamination. In the meantime, we recapture the findings from thesearch for suitable OLED packaging materials, in particular polymer composites, which provide both heat dissipation andmoisture resistance, in addition to electrical insulation.

Application of RCSR Mechanism in Two-row Harvester Cutting Device

Traditionally, the transmission device for cutter adopts gear mechanism combined with planar crank-rocker mechanism. In line with this drawback, this paper presents a practical spatial linkage mechanism. Through three-dimensional modeling and kinematic analysis, it obtains the equation of motion for output displacement, speed and acceleration. Besides, it gets the kinetic curve through emulation. The emulation results indicate that RCSR mechanism can realize smooth and stable output of cutter, laying a foundation for future dimensional synthesis of the mechanism.

Review of resistive switching mechanisms for memristive neuromorphic devices

Memristive devices have attracted intensive attention in developing hardware neuromorphic computing systems with high energy efficiency due to their simple structure,low power consumption,and rich switching dynamics resembling biological synapses and neurons in the last decades.Fruitful demonstrations have been achieved in memristive synapses neurons and neural networks in the last few years.Versatile dynamics are involved in the data processing and storage in biological neurons and synapses,which ask for carefully tuning the switching dynamics of the memristive emulators.Note that switching dynamics of the memristive devices are closely related to switching mechanisms.Herein,from the perspective of switching dynamics modulations,the mainstream switching mechanisms including redox reaction with ion migration and electronic effect have been systemically reviewed.The approaches to tune the switching dynamics in the devices with different mechanisms have been described.Finally,some other mechanisms involved in neuromorphic computing are briefly introduced.

Research on Cam-linkage Mechanism of Automatic Piecing Device

The principle of an automatic piecing device is presented, and the mathematic model of a specific combined mechanism of the automatic piecing device is analysed. The kinematics and dynamics equation of the combined mechanism is established on the basis of the mathematic model. By the virtual prototype technology, the motion of this mechanism is simulated, whose result is post-processed by ADAMS. To improve the output motion, according to the simulation output and automatic piecing device's practical working condition, the optimisation of the cam mechanism is carried out by finite difference method. The simulation result of this combined mechanism turns out in accordance with its theoretical analysis of virtual prototype in this research, which, therefore, lays a principle basis for the further study of automatic piecing device.

Quantum Boltzmann equation solved by Monte Carlo method for nano-scale semiconductor devices simulation

A two-dimensional （2D） full band self-consistent ensemble Monte Carlo （MC） method for solving the quantum Boltzmann equation, including collision broadening and quantum potential corrections, is developed to extend the MC method to the study of nano-scale semiconductor devices with obvious quantum mechanical （QM） effects. The quantum effects both in real space and momentum space in nano-scale semiconductor devices can be simulated. The effective mobility in the inversion layer of n and p channel MOSFET is simulated and compared with experimental data to verify this method. With this method 50nm ultra thin body silicon on insulator MOSFET are simulated. Results indicate that this method can be used to simulate the 2D QM effects in semiconductor devices including tunnelling effect.

Diode Laser Soldering Technology of Fine Pitch QFP Devices

The laser provides a controllable means of supplying localized energy for solder joint formation and is a valuable tool in electronics manufacture.Diode laser soldering for fine pitch QFP devices were carried out with Sn-Ag-Cu lead-free solder and Sn-Pb solder respectively,and the mechanical properties of micro-joints of the QFP devices were tested and studied by STR-1000 micro-joints tester.The results indicate that sound QFP micro-joints without bridging or solder ball are gained by means of diode laser soldering method with appropriate laser processing parameters,and the pitch of the QFP devices is as fine as to 0.4mm.Tensile strength of QFP micro-joints increases gradually with the increase of laser output power,the maximum tensile strength presents when the laser output power increase to a certain value.The results also indicate that the mechanical properties of QFP micro-joints soldered by diode laser soldering system are better than those of QFP micro-joints soldered by IR reflow soldering method.The experimental results may provide a theory guide for investigation of diode laser soldering.

Influence of confi ning pressure and impact loading on mechanical properties of amphibolite and sericite-quartz schist

In order to investigate the dynamic mechanical properties of amphibolite and sericite-quartz schist under confi ning pressure, two rocks are subjected to impact loadings with different strain rates and confi ning pressures by using split Hopkinson pressure bar equipment with a confi ning pressure device. Based on the experimental results, the stress-strain curves are analyzed and the effects of confi ning pressure and strain rates on the dynamic compressive strength, peak strain and failure mode are summarized. The results show that:(1) The characteristics of two rocks in the ascent stage of the stressstrain curve are basically the same, but in the descent stage, the rocks gradually show plastic deformation characteristics as the confi ning pressure increases.(2) The dynamic compressive strength and peak strain of two rocks increase as the strain rate increases and the confi ning pressure effects are obvious.(3) Due to the effect of confi ning pressure, the normal stress on the damage surface of the rock increases correspondingly, the bearing capacity of the crack friction exceeds the material cohesion and the slippage of the fractured rock is controlled, which all lead to the compression and shear failure mode of rock. The theoretical analysis and experimental methods to study the dynamic failure mode and other related characteristics of rock are useful in developing standards for engineering practice.

Mechanical Properties of QFP Joints Soldered with SnAgCu and SnPb Solders

With the development of lead-free solder alloys, the investiagtion focusing on the relibility of lead-free solders are essential. Since the reliability database of lead-free solder joints needs to be further supplied, the creep behavior of SnAgCu soldered joints on Quad Flat Package （QFP） devices under thermo cycling load are studied in this paper, compared to conventional SnPb solder, by finite element simulation based on Garofalo-Arrhenius creep model. Meanwhile, the mechanical properties of SnAgCu and SnPb soldered joints in the pitches of QFP devices are also carried out by means of tensile test. The results indicate that the values of strain and stress of SnAgCu soldered joints were all smaller than those of SnPb under thermal cycling, and the tensile strength of the joints soldered with SnAgCu solder was higher than that of SnPb, which means the reliability of the joints soldered with SnAgCu solder is better than SnPb soldered joints. As the fracture surface morphology of the soldered joints compared, SnAgCu soldered joint presented ductile fracture, while the fracture mechanism of SnPb solder joints displayed both brittle and ductile fracture. Above all, the experimental results is in accord with that of simulation, which will provide guidance for reliability study and application of lead-free solders.

MECHANICAL DEFLECTION OF POLYSILICON MICROCANTILEVER BEAMS USING NANOINDENTATION

The validity of a novel, direct and convenient method for micromechanical property measurements by beam bending using a nanoindenter is demonstrated. This method combines a very high load resolution with a nanometric precision in the determination of the microcantilever beam deflection. The method is described clearly. In the deflection of microbeams, the influence of the indenter tip pushing into the top of the microbeams and the curvature across its width must be considered. The measurements were made on single-layer, micro-thick, several kinds of width and length polysilicon beams that were fabricated using conventional integrated circuit (IC) fabrication techniques. The elastic of a polysilicon microcantilever beam will vary linearly with the force and the deformation is thought to be elastic. Furthermore, it suggests that Young modulus of the beam can be determined from the slope of this linear relation. From the load deflection data acquired during bending the mechanical properties of the thin films were determined. Measured Young modulus is 137 GPa with approximately a ±2.9%～±6.3% difference in Young modulus.